SMBTA06U NPN Silicon AF Transistor Array 5 High breakdown voltage 4 6 Low collector-emitter saturation voltage Complementary type: SMBTA56U (PNP) 3 Two ( galvanic) internal isolated Transistors 2 with good matching in one package 1 VPW09197 C1 B2 E2 6 5 4 TR2 TR1 1 2 3 E1 B1 C2 EHA07178 Type Marking SMBTA06U s1G Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 80 Collector-base voltage VCBO 80 Emitter-base voltage VEBO 4 DC collector current IC Peak collector current ICM Base current IB 100 Peak base current IBM 200 Total power dissipation, TS = 115 °C Ptot 330 mW Junction temperature Tj 150 °C Storage temperature Tstg Value 500 1 Unit V mA A mA -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS 105 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance 1 Nov-30-2001 SMBTA06U Electrical Characteristics Parameter Symbol Values Unit min. typ. max. V(BR)CEO 80 - - V(BR)CBO 80 - - V(BR)EBO 4 - - ICBO - - 100 nA ICBO - - 20 µA ICEO - - 100 nA DC Characteristics Collector-emitter breakdown voltage V IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 100 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 80 V, IE = 0 Collector cutoff current VCB = 80 V, IE = 0 , TA = 150 °C Collector cutoff current VCE = 60 V, IB = 0 DC current gain 1) - hFE IC = 10 mA, VCE = 1 V 100 - - IC = 100 mA, VCE = 1 V 100 - - VCEsat - - 0.25 VBE(ON) - - 1.2 fT - 100 - MHz Ccb - 12 - pF Collector-emitter saturation voltage1) V IC = 100 mA, IB = 10 mA Base-emitter voltage 1) IC = 100 mA, VCE = 1 V AC Characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 20 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 1) Pulse test: t ≤ 300µs, D = 2% 2 Nov-30-2001 SMBTA06U Total power dissipation Ptot = f (TS ) Collector cutoff current ICBO = f (TA) VCB = 80V 400 EHP00820 10 4 nA mW Ι CBO 300 Ptot max 10 3 5 250 10 2 5 200 typ 10 1 5 150 100 10 0 5 50 0 0 20 40 60 80 120 °C 100 10 -1 150 0 50 C 150 100 TS TA Permissible Pulse Load Permissible Pulse Load RthJS = f (tp ) Ptotmax / PtotDC = f (tp) 10 3 10 3 Ptotmax / PtotDC K/W RthJS 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 10 1 -2 s 10 10 0 -6 10 0 tp 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 3 Nov-30-2001 SMBTA06U Collector-emitter saturation voltage Base-emitter saturation voltage IC = f (VCEsat ), hFE = 10 IC = f (VBEsat ), hFE = 10 10 EHP00818 10 3 EHP00819 3 mA 100 ˚C 25 ˚C -50 ˚C ΙC Ι C mA 100 C 25 C -50 C 10 2 10 2 5 5 10 1 5 10 1 10 0 5 5 10 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 V 10 -1 0.8 0 0.5 V CEsat 1.5 V BEsat DC current gain hFE = f (IC ) Collector current IC = f (VBE) VCE = 1V VCE = 1V EHP00821 10 3 V 1.0 EHP00815 10 3 mA ΙC h FE 10 2 100 C 10 2 25 C 5 -50 C 10 1 100 C 25 C -50 C 5 10 1 10 0 5 10 0 -1 10 10 0 10 1 10 2 mA 10 10 -1 3 0 ΙC 0.5 V 1.0 1.5 V BE 4 Nov-30-2001 SMBTA06U Transition frequency fT = f (IC) VCE = 5V EHP00817 10 3 MHz fT 5 10 2 5 10 1 10 0 5 10 1 5 10 2 mA 10 3 ΙC 5 Nov-30-2001