IRF IRF5M5210

PD - 94247
HEXFET® POWER MOSFET
THRU-HOLE (TO-254AA)
IRF5M5210
100V, P-CHANNEL
Product Summary
Part Number
BVDSS
IRF5M5210
-100V
RDS(on)
0.07Ω
ID
-34A
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse
circuits.
TO-254AA
Features:
n
n
n
n
n
n
n
Low RDS(on)
Avalanche Energy Ratings
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -10V, TC = 25°C
ID @ VGS = -10V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
-34
-21
-136
125
1.0
±20
520
-21
12.5
3.4
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
300 (0.063in./1.6mm from case for 10s)
9.3 (Typical)
C
g
For footnotes refer to the last page
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1
06/13/01
IRF5M5210
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Min
Typ Max Units
—
—
V
-0.12
—
V/°C
—
0.07
Ω
—
—
—
—
-4.0
—
-25
-250
V
S( )
Test Conditions
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1.0mA
VGS = -10V, ID = -21A ➃
VDS = VGS, ID = -250µA
VDS = -15V, IDS = -21A ➃
VDS = -100V ,VGS=0V
VDS = -80V,
VGS = 0V, TJ =125°C
VGS = -20V
VGS = 20V
VGS =-10V, ID = -21A
VDS = -80V
Ω
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
-100
∆BV DSS/∆T J Temperature Coefficient of Breakdown —
Voltage
RDS(on)
Static Drain-to-Source On-State
—
Resistance
VGS(th)
Gate Threshold Voltage
-2.0
gfs
Forward Transconductance
10
IDSS
Zero Gate Voltage Drain Current
—
—
µA
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
-100
100
180
25
100
28
150
100
120
—
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
2730
824
465
—
—
—
nA
nC
VDD = -50V, ID = -21A,
VGS =-10V, RG = 2.5Ω
ns
nH
pF
Measured from drain lead (6mm /
0.25in. from package ) to source
lead (6mm/0.25in. from pacakge
VGS = 0V, VDS = -25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
t rr
QRR
ton
Min Typ Max Units
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
-34
-136
-1.6
260
1.8
Test Conditions
A
V
ns
µC
Tj = 25°C, IS = -21A, VGS = 0V ➃
Tj = 25°C, IF = -21A, di/dt ≥ 100A/µs
VDD ≤ -30V ➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max Units
—
—
1.0
Test Conditions
°C/W
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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IRF5M5210
1000
1000
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
BOTTOM -4.5V
100
100
10
-4.5V
1
20µs PULSE WIDTH
T = 25 C
°
J
0.1
0.1
1
10
10
-4.5V
1
100
2.5
100
TJ = 150 ° C
10
15
V DS = -50V
20µs PULSE WIDTH
10
12
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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R DS(on) , Drain-to-Source On Resistance
(Normalized)
-I D , Drain-to-Source Current (A)
TJ = 25 ° C
8
1
10
100
Fig 2. Typical Output Characteristics
1000
6
°
J
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1
20µs PULSE WIDTH
T = 150 C
0.1
0.1
-VDS , Drain-to-Source Voltage (V)
4
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
BOTTOM -4.5V
TOP
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
TOP
ID = -34A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF5M5210
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
4000
Ciss
3000
C
oss
2000
Crss
1000
1
10
ID = -21A
VDS = -80V
VDS = -50V
VDS = -20V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
100
0
-VDS , Drain-to-Source Voltage (V)
40
80
120
160
200
240
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
-I D, Drain-to-Source Current (A)
1000
100
TJ = 150 ° C
TJ = 25 ° C
1
V GS = 0 V
0.8
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
10
0.1
0.2
1.4
2.0
-VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
16
0
-ISD , Reverse Drain Current (A)
C, Capacitance (pF)
5000
20
-VGS , Gate-to-Source Voltage (V)
6000
2.6
10
1ms
Tc = 25°C
Tj = 150°C
Single Pulse
10ms
1
1
10
100
1000
-VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF5M5210
35
RD
V DS
30
-ID , Drain Current (A)
VGS
25
D.U.T.
RG
+
V DD
20
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
15
10
Fig 10a. Switching Time Test Circuit
5
td(on)
tr
t d(off)
tf
VGS
10%
0
25
50
75
100
125
150
TC , Case Temperature ( ° C)
90%
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
P DM
0.10
0.1
t1
0.05
0.02
0.01
0.01
0.00001
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF5M5210
EAS , Single Pulse Avalanche Energy (mJ)
1200
L
VDS
ID
-9.4A
-13.3A
BOTTOM -21A
TOP
1000
D .U .T
RG
VD D
IA S
VGS
-20V
tp
A
D R IV E R
0.0 1Ω
15V
Fig 12a. Unclamped Inductive Test Circuit
800
600
400
200
0
25
IAS
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
tp
V (BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
-12V
12V
.2µF
.3µF
-10V
QGS
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 13a. Basic Gate Charge Waveform
6
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRF5M5210
Footnotes:
 Repetitive Rating; Pulse width limited by
ƒ ISD ≤ - 21A, di/dt ≤ - 400 A/µs,
maximum junction temperature.
‚ VDD = -25 V, Starting TJ = 25°C, L= 2.4mH
Peak IAS = -21A, VGS = -10V, RG= 25Ω
„ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
VDD ≤ -100V, TJ ≤ 150°C
Case Outline and Dimensions — TO-254AA
0.12 [.005]
0.12 [.005]
13.84 [.545]
13.59 [.535]
3.78 [.149]
3.53 [.139]
6.60 [.260]
6.32 [.249]
A
20.32 [.800]
20.07 [.790]
17.40 [.685]
16.89 [.665]
31.40 [1.235]
30.35 [1.195]
1
2
A
22.73 [.895]
21.21 [.835]
13.84 [.545]
13.59 [.535]
20.32 [.800]
20.07 [.790]
17.40 [.685]
16.89 [.665]
1
3
2
13.84 [.545]
13.59 [.535]
4.82 [.190]
3.81 [.150]
3X
3.81 [.150]
1.14 [.045]
0.89 [.035]
3.81 [.150]
3.81 [.150]
0.36 [.014]
2X
NOT ES :
B
2X
1.27 [.050]
1.02 [.040]
B
R 1.52 [.060]
3
B
17.40 [.685]
16.89 [.665]
4.06 [.160]
3.56 [.140]
3X
1.14 [.045]
0.89 [.035]
0.36 [.014]
B
A
A
PIN AS S IGNMENT S
1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994.
1 = DRAIN
2. ALL DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ].
2 = S OURCE
3 = GAT E
3. CONT ROLLING DIMENS ION: INCH.
6.60 [.260]
6.32 [.249]
13.84 [.545]
13.59 [.535]
3.78 [.149]
3.53 [.139]
1.27 [.050]
1.02 [.040]
4. CONF ORMS T O JEDEC OUT LINE T O-254AA.
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Packages containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids
that will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 06/01
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7