IRF IRGPH40FD2

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PD - 9.1117
IRGPH40FD2
INSULATED GATE BIPOLAR TRANSISTOR
WITH ULTRAFAST SOFT RECOVERY
DIODE
Fast CoPack IGBT
Features
C
VCES = 1200V
• Switching-loss rating includes all "tail" losses
TM
• HEXFRED soft ultrafast diodes
• Optimized for medium operating frequency (1 to
10kHz) See Fig. 1 for Current vs. Frequency curve
VCE(sat) ≤ 3.3V
G
@VGE = 15V, IC = 17A
E
n-channel
Description
Co-packaged IGBTs are a natural extension of International Rectifier's well
known IGBT line. They provide the convenience of an IGBT and an ultrafast
recovery diode in one package, resulting in substantial benefits to a host of
high-voltage, high-current, motor control, UPS and power supply applications.
TO-247AC
Absolute Maximum Ratings
Parameter
VCES
IC @ T C = 25°C
IC @ T C = 100°C
ICM
ILM
IF @ T C = 100°C
IFM
VGE
PD @ T C = 25°C
PD @ T C = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
Units
1200
29
17
58
58
8.0
130
± 20
160
65
-55 to +150
V
A
V
W
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Thermal Resistance
Parameter
RθJC
RθJC
RθCS
RθJA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
C-285
To Order
Min.
Typ.
Max.
—
—
—
—
—
—
—
0.24
—
6 (0.21)
0.77
1.7
—
40
—
Units
°C/W
g (oz)
Revision 1
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IRGPH40FD2
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
∆V(BR)CES/∆TJ
VCE(on)
VGE(th)
∆VGE(th)/∆TJ
gfe
ICES
VFM
IGES
Parameter
Min. Typ. Max. Units
Conditions
Collector-to-Emitter Breakdown Voltage
1200 —
—
V
VGE = 0V, I C = 250µA
Temperature Coeff. of Breakdown Voltage
—
1.3
—
V/°C VGE = 0V, IC = 1.0mA
Collector-to-Emitter Saturation Voltage
—
2.5 3.3
IC = 17A
V GE = 15V
—
3.2
—
V
IC = 29A
See Fig. 2, 5
—
3.0
—
IC = 17A, T J = 150°C
Gate Threshold Voltage
3.0
—
5.5
VCE = VGE, IC = 250µA
Temperature Coeff. of Threshold Voltage —
-13
— mV/°C VCE = VGE, IC = 250µA
Forward Transconductance
5.0
11
—
S
VCE = 100V, I C = 17A
Zero Gate Voltage Collector Current
—
—
250
µA
VGE = 0V, V CE = 1200V
—
— 1000
VGE = 0V, V CE = 1200V, T J = 150°C
Diode Forward Voltage Drop
—
2.6 3.3
V
IC = 8.0A
See Fig. 13
—
2.3 3.0
IC = 8.0A, T J = 150°C
Gate-to-Emitter Leakage Current
—
— ±100 nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Irr
Diode Peak Reverse Recovery Current
Qrr
Diode Reverse Recovery Charge
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During t b
Notes:
Repetitive rating; V GE=20V, pulse width
limited by max. junction temperature.
( See fig. 20 )
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
45
11
17
70
58
320
370
2.6
5.4
8.0
70
54
670
930
15
13
1200
75
15
63
106
4.5
6.2
140
335
133
85
Max. Units
Conditions
67
IC = 17A
16
nC
VCC = 400V
26
See Fig. 8
—
TJ = 25°C
—
ns
IC = 17A, V CC = 800V
550
VGE = 15V, R G = 10Ω
630
Energy losses include "tail" and
—
diode reverse recovery.
—
mJ
See Fig. 9, 10, 11, 18
15
—
TJ = 150°C,
See Fig. 9, 10, 11, 18
—
ns
IC = 17A, V CC = 800V
—
VGE = 15V, R G = 10Ω
—
Energy losses include "tail" and
—
mJ
diode reverse recovery.
—
nH
Measured 5mm from package
—
VGE = 0V
—
pF
VCC = 30V
See Fig. 7
—
ƒ = 1.0MHz
95
ns
TJ = 25°C See Fig.
160
TJ = 125°C
14
I F = 8.0A
8.0
A
TJ = 25°C See Fig.
11
TJ = 125°C
15
V R = 200V
380
nC
TJ = 25°C See Fig.
880
TJ = 125°C
16
di/dt = 200A/µs
—
A/µs TJ = 25°C See Fig.
—
TJ = 125°C
17
VCC=80%(V CES), VGE=20V, L=10µH,
R G= 10Ω, ( See fig. 19 )
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
C-286
To Order
Pulse width 5.0µs,
single shot.
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IRGPH40FD2
25
D uty c yc le : 50%
TJ = 12 5 °C
T s in k = 9 0 °C
G ate d rive as sp e cified
Turn-on lo sse s in clu de
e ffec ts of reve rse re co very
Power Dissipation = 35 W
Load Current (A)
20
15
6 0 % o f ra te d
vo lta g e
10
5
A
0
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I RMS of fundamental)
1000
IC , C olle ctor-to -E m itte r C u rren t (A )
I C , C o lle ctor-to-E m itter C urre nt (A )
100
TJ = 2 5°C
TJ = 15 0 °C
10
V G E = 15 V
20 µs P UL S E W ID TH
1
1
100
TJ = 1 50 °C
10
TJ = 2 5°C
1
0.1
V C C = 1 00 V
5µ s P U LS E W IDTH
0.01
10
5
V C E , C o llector-to-Em itter V oltage (V)
10
15
V G E , G ate -to-E m itter V olta ge (V )
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics
C-287
To Order
20
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IRGPH40FD2
5.0
V G E = 15 V
V C E , C ollec tor-to -E m itte r V o lta ge (V )
M aximum D C C ollector Current (A )
30
20
10
0
V G E = 1 5V
8 0µ s P U LS E W IDTH
I C = 3 4A
4.0
I C = 1 7A
3.0
I C = 8.5 A
2.0
25
50
75
100
125
150
-60
T C , C ase Tem perature (°C )
-40
-20
0
20
40
60
80
100 120 14 0 160
T C , C as e T em pe ra ture (°C )
Fig. 5 - Collector-to-Emitter Voltage vs.
Case Temperature
Fig. 4 - Maximum Collector Current vs.
Case Temperature
T herm al Response (Z th JC )
1
D = 0 .5 0
0.2 0
0.1
0.1 0
PD M
0 .05
0.0 2
t
SIN G LE P UL SE
(TH ER MA L R E SP O NS E )
t2
N o te s:
1 . D u ty fa c to r D = t
0.0 1
0.01
0.00001
1
1
/ t
2
2 . P e a k TJ = P D M x Z thJ C + T C
0.0001
0.001
0.01
0.1
1
t 1 , R ectangular Pulse D uration (sec)
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
C-288
To Order
10
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IRGPH40FD2
20
24 0 0
C, C apacitance (pF)
20 0 0
V G E , G a te-to-E m itte r V o ltag e (V )
V GE = 0V,
f = 1MHz
C ies = C ge + C gc , Cce SHORTED
C res = C gc
C oes = C ce + C gc
16
Cies
16 0 0
V C E = 40 0V
I C = 17 A
12
Coes
12 0 0
800
Cres
400
8
4
0
0
1
10
0
100
10
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
VCC
VGE
TC
IC
Total Switching Losses (mJ)
8.6
30
40
50
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
100
= 800V
= 15V
= 25°C
= 17A
Total Switching Losses (mJ)
8.7
20
Q g , T o tal G a te C h a rg e (n C )
V C E , C o llector-to-Em itter V oltage (V)
8.5
8.4
8.3
8.2
8.1
RG = 10Ω
V GE = 15V
V CC = 800V
I C = 34A
I C = 17A
10
I C = 8.5A
8.0
7.9
A
1
0
10
20
30
40
50
60
-60
-40
-20
0
20
40
60
80
100 120 140 160
TC , Case Temperature (°C)
R G , Gate Resistance (Ω)
W
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Case Temperature
C-289
To Order
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IRGPH40FD2
1000
= 10Ω
= 150°C
= 800V
= 15V
I , C o llec to r-to-E m itter C urren t (A )
RG
TC
V CC
V GE
30
20
VGGE E= 20 V
T J = 12 5°C
100
S A FE O P E RA TIN G A RE A
10
1
C
10
A
0
0
10
20
30
0.1
1
40
10
100
1000
V C E , C o llec to r-to -E m itte r V o lta g e (V )
I C , Collector-to-Emitter Current (A)
Fig. 12 - Turn-Off SOA
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
100
Instantaneous Forward Current - I F (A)
Total Switching Losses (mJ)
40
10
TJ = 150°C
TJ = 125°C
TJ = 25°C
1
0
2
4
6
8
10
Forward Voltage Drop - V FM (V)
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
C-290
To Order
10000
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IRGPH40FD2
100
200
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
160
120
I IRRM - (A)
t rr - (ns)
I F = 16A
I F = 8.0A
I F = 4.0A
IF = 16A
IF = 8.0A
10
I F = 4.0A
80
40
0
100
1
100
1000
dif /dt - (A/µs)
1000
di f /dt - (A/µs)
Fig. 15 - Typical Recovery Current vs. dif/dt
Fig. 14 - Typical Reverse Recovery vs. dif/dt
1000
600
VR = 200V
TJ = 125°C
TJ = 25°C
500
di(rec)M/dt - (A/µs)
I F = 4.0A
Q RR - (nC)
400
IF = 16A
300
200
I F = 8.0A
I F = 4.0A
I F = 8.0A
100
VR = 200V
TJ = 125°C
TJ = 25°C
100
0
100
IF = 16A
1000
di f /dt - (A/µs)
Fig. 16 - Typical Stored Charge vs. dif/dt
10
100
di f /dt - (A/µs)
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
C-291
To Order
1000
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IRGPH40FD2
90% Vge
Same type
device as
D.U.T.
+Vge
Vce
430µF
80%
of Vce
D.U.T.
Ic
90% Ic
10% Vce
Ic
5% Ic
td(off)
tf
Fig. 18a - Test Circuit for Measurement of
Eoff =
ILM, Eon, Eoff(diode) , trr, Qrr, Irr, td(on), tr, td(off), tf
t1
∫
t1+5µS
Vce ic dt
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
trr
GATE VOLTAGE D.U.T.
10% +Vg
Qrr =
Ic
∫
trr
id dt
tx
+Vg
tx
10% Vcc
10% Irr
Vcc
DUT VOLTAGE
AND CURRENT
Vce
Vpk
Irr
Vcc
10% Ic
90% Ic
Ipk
Ic
DIODE RECOVERY
WAVEFORMS
tr
td(on)
5% Vce
t1
∫
t2
Eon = Vce ie dt
t1
DIODE REVERSE
RECOVERY ENERGY
t2
t3
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
∫
t4
Erec = Vd id dt
t3
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining E on, td(on), tr
Defining E rec, trr, Qrr, Irr
Refer to Section D for the following:
Appendix H: Section D - page D-10
Fig. 18e - Macro Waveforms for Test Circuit Fig. 18a
Fig. 19 - Clamped Inductive Load Test Circuit
Fig. 20 - Pulsed Collector Current Test Circuit
Package Outline 3 - JEDEC Outline TO-247AC
C-292
To Order
Section D - page D-13