IRF CPV364MK

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PD - 5.037
CPV364MK
Short Circuit Rated UltraFast IGBT
IGBT SIP MODULE
Features
1
• Short Circuit Rated - 10µs @ 125°C, V GE = 15V
Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
TM
• HEXFRED soft ultrafast diodes
• Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve
•
3
Q1
D1
9
Q3
D3
15
4
6
Q2
D2
12
D5
Q5
10
Q4
D4
18
16
D6
Q6
Product Summary
7
13
Output Current in a Typical 20 kHz Motor Drive
8.8 ARMS per phase (2.7 kW total) with T C = 90°C, T J = 125°C, Supply Voltage 360Vdc,
Power Factor 0.8, Modulation Depth 80% (See Figure 1)
19
Description
The IGBT technology is the key to International Rectifier's advanced line of IMS
(Insulated Metal Substrate) Power Modules. These modules are more efficient
than comparable bipolar transistor modules, while at the same time having the
simpler gate-drive requirements of the familiar power MOSFET. This superior
technology has now been coupled to a state of the art materials system that
maximizes power throughput with low thermal resistance. This package is highly
suited to power applications and where space is at a premium.
These new short circuit rated devices are especially suited for motor control and
other totem-pole applications requiring short circuit withstand capability.
IMS-2
Absolute Maximum Ratings
Parameter
VCES
IC @ T C = 25°C
IC @ T C = 100°C
ICM
ILM
IF @ T C = 100°C
IFM
tsc
VGE
VISOL
PD @ T C = 25°C
PD @ T C = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current, each IGBT
Continuous Collector Current, each IGBT
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Isolation Voltage, any terminal to case, 1 min.
Maximum Power Dissipation, each IGBT
Maximum Power Dissipation, each IGBT
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
Units
600
24
13
48
48
9.3
48
10
± 20
2500
63
25
-40 to +150
V
A
µs
V
VRMS
W
°C
300 (0.063 in. (1.6mm) from case)
5-7 lbf•in (0.55 - 0.8 N•m)
Thermal Resistance
Parameter
RθJC (IGBT)
RθJC (DIODE)
RθCS (MODULE)
Wt
Junction-to-Case, each IGBT, one IGBT in conduction
Junction-to-Case, each diode, one diode in conduction
Case-to-Sink, flat, greased surface
Weight of module
C-979
To Order
Typ.
Max.
—
—
0.1
20 (0.7)
2.0
3.0
—
—
Units
°C/W
g (oz)
Revision 2
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CPV364MK
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
VCE(on)
Parameter
Collector-to-Emitter Breakdown Voltage
Temp. Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
VGE(th)
∆VGE(th)/∆TJ
gfe
ICES
Gate Threshold Voltage
Temp. Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
VFM
Diode Forward Voltage Drop
IGES
Gate-to-Emitter Leakage Current
V(BR)CES
∆V(BR)CES/∆TJ
Min. Typ. Max. Units
Conditions
600
—
—
V
VGE = 0V, I C = 250µA
— 0.63 —
V/°C VGE = 0V, IC = 1.0mA
—
2.1
3.1
IC = 13A
V GE = 15V
—
2.6
—
V
IC = 24A
See Fig. 2, 5
—
2.2
—
IC = 13A, T J = 150°C
3.0
—
5.5
VCE = VGE, IC = 250µA
—
-13
— mV/°C VCE = VGE, IC = 250µA
11
18
—
S
VCE = 100V, I C = 20A
—
—
250
µA
VGE = 0V, V CE = 600V
—
— 3500
VGE = 0V, V CE = 600V, T J = 150°C
—
1.3
1.7
V
IC = 15A
See Fig. 13
—
1.2
1.6
IC = 15A, T J = 150°C
—
— ±500
nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
tsc
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
td(on)
tr
td(off)
tf
Ets
Cies
Coes
Cres
trr
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Irr
Diode Peak Reverse Recovery Current
Qrr
Diode Reverse Recovery Charge
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During t b
Notes:
Repetitive rating; V GE=20V, pulse width limited
by max. junction temperature. ( See fig. 20)
Min.
—
—
—
—
—
—
—
—
—
—
10
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ. Max. Units
Conditions
61
90
IC = 20A
13
20
nC
VCC = 400V
22
35
See Fig. 8
70
—
TJ = 25°C
55
—
ns
IC = 13A, V CC = 480V
130 200
VGE = 15V, R G = 10Ω
47
71
Energy losses include "tail" and
0.65 —
diode reverse recovery.
0.37 —
mJ
See Fig. 9, 10, 11, 18
1.0
1.5
—
—
µs
VCC = 360V, T J = 125°C
VGE = 15V, R G = 10Ω, VCPK < 500V
66
—
TJ = 150°C,
See Fig. 9, 10, 11, 18
48
—
ns
IC = 13A, V CC = 480V
250
—
VGE = 15V, R G = 10Ω
140
—
Energy losses include "tail" and
1.6
—
mJ
diode reverse recovery.
1500 —
VGE = 0V
190
—
pF
VCC = 30V
See Fig. 7
17
—
ƒ = 1.0MHz
42
60
ns
TJ = 25°C See Fig.
74 120
TJ = 125°C
14
I F = 15A
4.0
6.0
A
TJ = 25°C See Fig.
6.5
10
TJ = 125°C
15
V R = 200V
80 180
nC
TJ = 25°C See Fig.
220 600
TJ = 125°C
16
di/dt = 200A/µs
188
—
A/µs TJ = 25°C See Fig.
160
—
TJ = 125°C
17
VCC=80%(V CES), VGE=20V, L=10µH,
R G= 10Ω, ( See fig. 19 )
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
C-980
To Order
Pulse width 5.0µs,
single shot.
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15
4.7
12
3.7
9
2.8
6
1.9
TC = 90°C
TJ = 125°C
Power Factor = 0.8
Modulation Depth = 0.8
VCC = 60% of Rated Voltage
3
0.9
Total Output Power (kW)
Load Current (A)
CPV364MK
0
0
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - RMS Current and Output Power, Synthesized Sine Wave
1000
10
TJ = 150°C
TJ = 25°C
1
VGE = 15V
20µs PULSE WIDTH A
0.1
0.1
1
IC , Collector-to-Emitter Current (A)
IC , Collector-to-Emitter Current (A)
100
10
100
TJ = 150°C
10
TJ = 25°C
VCC = 100V
5µs PULSE WIDTH A
1
5
VCE , Collector-to-Emitter Voltage (V)
10
15
VGE, Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics
C-981
To Order
20
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CPV364MK
3.5
VGE = 15V
VCE , Collector-to-Emitter Voltage (V)
Maximum DC Collector Current (A)
25
20
15
10
5
A
0
25
50
75
100
125
VGE = 15V
80µs PULSE WIDTH
I C = 26A
3.0
2.5
I C = 13A
2.0
I C = 6.5A
1.5
A
1.0
150
-60
TC , Case Temperature (°C)
-40
-20
0
20
40
60
80
100 120 140 160
TC, Case Temperature (°C)
Fig. 5 - Collector-to-Emitter Voltage vs.
Case Temperature
Fig. 4 - Maximum Collector Current vs.
Case Temperature
T h e rm a l R e sp o n s e (Z thJC )
10
1
D = 0 .5 0
0 .2 0
0 .1 0
PD M
0 .0 5
0.1
t
0 .0 2
0 .0 1
0.01
0.00001
1
t
S IN G L E P U L S E
(T H E R M A L R E S P O N S E )
N o te s:
1 . D u ty fa c to r D = t
1
/ t
2
2
2 . P e a k TJ = P D M x Z thJ C + T C
0.0001
0.001
0.01
0.1
1
t 1 , R e c ta n gu la r P u ls e D ura tio n (s e c )
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
C-982
To Order
10
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CPV364MK
2500
VGE , Gate-to-Emitter Voltage (V)
2000
C, Capacitance (pF)
20
V GE = 0V,
f = 1MHz
C ies = C ge + C gc , Cce SHORTED
C res = C gc
C oes = C ce + C gc
Cies
1500
Coes
1000
500
Cres
A
0
1
10
VCE = 400V
I C = 25A
16
12
8
4
A
0
100
0
20
VCE, Collector-to-Emitter Voltage (V)
= 480V
= 15V
= 25°C
= 13A
Total Switching Losses (mJ)
Total Switching Losses (mJ)
1.16
1.12
1.08
1.04
1.00
A
0.96
0
10
20
30
40
80
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
10
VCC
VGE
TC
IC
60
Qg , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
1.20
40
50
RG = 10Ω
V GE = 15V
V CC = 480V
I C = 26A
I C = 13A
1
I C = 6.5A
A
0.1
-60
60
-40
-20
0
20
40
60
80
100 120 140 160
TC , Case Temperature (°C)
R G , Gate Resistance (Ω)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Case Temperature
C-983
To Order
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CPV364MK
1000
= 10Ω
= 150°C
= 480V
= 15V
IC , Collector-to-Emitter Current (A)
RG
TC
V CC
V GE
3.0
2.0
1.0
A
0.0
0
10
20
VGE = 20V
TJ = 125°C
100
SAFE OPERATING AREA
10
A
1
1
30
10
100
VCE, Collector-to-Emitter Voltage (V)
IC , Collector-to-Emitter Current (A)
Fig. 12 - Turn-Off SOA
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
100
Instantaneous Forward Current - I F (A)
Total Switching Losses (mJ)
4.0
10
TJ = 150°C
TJ = 125°C
TJ = 25°C
1
0.8
1.2
1.6
2.0
2.4
Forward Voltage Drop - V FM (V)
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
C-984
To Order
1000
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CPV364MK
100
100
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
80
I IRRM - (A)
t rr - (ns)
I F = 30A
I F = 30A
60
I F = 15A
IF = 15A
10
I F = 5.0A
40
I F = 5.0A
20
100
1
100
1000
di f /dt - (A/µs)
1000
di f /dt - (A/µs)
Fig. 15 - Typical Recovery Current vs. dif/dt
Fig. 14 - Typical Reverse Recovery vs. dif/dt
1000
800
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
di(rec)M/dt - (A/µs)
600
Q RR - (nC)
IF = 30A
400
I F = 15A
IF = 5.0A
I F = 5.0A
I F = 15A
I F = 30A
200
0
100
1000
di f /dt - (A/µs)
Fig. 16 - Typical Stored Charge vs. dif/dt
100
100
di f /dt - (A/µs)
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
C-985
To Order
1000
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CPV364MK
90% Vge
Same type
device as
D.U.T.
+Vge
Vce
430µF
80%
of Vce
Ic
D.U.T.
90% Ic
10% Vce
Ic
5% Ic
td(off)
tf
Eoff =
Fig. 18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode) , trr, Qrr, Irr, td(on), tr, td(off), tf
t1
∫
t1+5µS
Vce ic dt
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
trr
GATE VOLTAGE D.U.T.
10% +Vg
Qrr =
Ic
∫
trr
id dt
tx
+Vg
tx
10% Vcc
10% Irr
Vcc
DUT VOLTAGE
AND CURRENT
Vce
Vpk
Irr
Vcc
10% Ic
90% Ic
Ipk
Ic
DIODE RECOVERY
WAVEFORMS
tr
td(on)
5% Vce
t1
∫
t2
Eon = Vce ie dt
t1
DIODE REVERSE
RECOVERY ENERGY
t2
t3
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
∫
t4
Erec = Vd id dt
t3
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining E on, td(on), tr
Defining E rec, trr, Qrr, Irr
Refer to Section D for the following:
Appendix D: Section D - page D-6
Fig. 18e - Macro Waveforms for Test Circuit of Fig. 18a
Fig. 19 - Clamped Inductive Load Test Circuit
Fig. 20 - Pulsed Collector Current Test Circuit
Package Outline 5 - IMS-2 Package (13 pins)
C-986
To Order
Section D - page D-14