Previous Datasheet Index Next Data Sheet PD - 5.032 CPV362MK IGBT SIP MODULE Short Circuit Rated UltraFast IGBT Features 1 • Short Circuit Rated - 10µs @ 125°C, V GE = 15V Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve • 3 Q1 D1 9 Q3 D3 15 4 6 Q2 D2 12 D5 Q5 10 Q4 D4 18 16 D6 Q6 Product Summary 7 13 Output Current in a Typical 20 kHz Motor Drive 3.5 ARMS per phase (1.1 kW total) with T C = 90°C, T J = 125°C, Supply Voltage 360Vdc, Power Factor 0.8, Modulation Depth 80% (See Figure 1) 19 Description The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to power applications and where space is at a premium. These new short circuit rated devices are especially suited for motor control and other totem-pole applications requiring short circuit withstand capability. IMS-2 Absolute Maximum Ratings Parameter VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM IF @ T C = 100°C IFM tsc VGE VISOL PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current, each IGBT Continuous Collector Current, each IGBT Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Isolation Voltage, any terminal to case, 1 min. Maximum Power Dissipation, each IGBT Maximum Power Dissipation, each IGBT Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. Units 600 5.7 3.0 11 11 3.4 11 10 ± 20 2500 23 9.1 -40 to +150 V A µs V VRMS W °C 300 (0.063 in. (1.6mm) from case) 5-7 lbf•in (0.55 - 0.8 N•m) Thermal Resistance Parameter RθJC (IGBT) RθJC (DIODE) RθCS (MODULE) Wt Junction-to-Case, each IGBT, one IGBT in conduction Junction-to-Case, each diode, one diode in conduction Case-to-Sink, flat, greased surface Weight of module C-963 To Order Typ. Max. — — 0.1 20 (0.7) 5.5 9.0 — — Units °C/W g (oz) Revision 2 Previous Datasheet Index Next Data Sheet CPV362MK Electrical Characteristics @ TJ = 25°C (unless otherwise specified) VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Temp. Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) ∆VGE(th)/∆TJ gfe ICES Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current VFM Diode Forward Voltage Drop IGES Gate-to-Emitter Leakage Current V(BR)CES ∆V(BR)CES/∆TJ Min. Typ. Max. Units Conditions 600 — — V VGE = 0V, I C = 250µA — 0.37 — V/°C VGE = 0V, IC = 1.0mA — 2.3 3.5 IC = 3.0A V GE = 15V — 2.7 — V IC = 5.7A See Fig. 2, 5 — 2.2 — IC = 3.0A, T J = 150°C 3.0 — 5.5 VCE = VGE, IC = 250µA — -11 — mV/°C VCE = VGE, IC = 250µA 1.9 3.3 — S VCE = 100V, I C = 6.0A — — 250 µA VGE = 0V, V CE = 600V — — 1700 VGE = 0V, V CE = 600V, T J = 150°C — 1.4 1.7 V IC = 8.0A See Fig. 13 — 1.3 1.6 IC = 8.0A, T J = 150°C — — ±500 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time td(on) tr td(off) tf Ets Cies Coes Cres trr Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge di(rec)M/dt Diode Peak Rate of Fall of Recovery During t b Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 20) Min. — — — — — — — — — — 10 Typ. 17 4.3 6.4 60 20 110 50 0.10 0.10 0.20 — — — — — — — — — — — — — — — — — 60 17 230 130 0.29 350 50 4.7 37 55 3.5 4.5 65 124 240 210 Max. Units Conditions 26 IC = 6.0A 6.8 nC VCC = 400V 11 See Fig. 8 — TJ = 25°C — ns IC = 3.0A, V CC = 480V 220 VGE = 15V, R G = 50Ω 110 Energy losses include "tail" and — diode reverse recovery. — mJ See Fig. 9, 10, 11, 18 0.27 — µs VCC = 360V, T J = 125°C VGE = 15V, R G = 50Ω, VCPK < 500V — TJ = 150°C, See Fig. 9, 10, 11, 18 — ns IC = 3.0A, V CC = 480V — VGE = 15V, R G = 50Ω — Energy losses include "tail" and — mJ diode reverse recovery. — VGE = 0V — pF VCC = 30V See Fig. 7 — ƒ = 1.0MHz 55 ns TJ = 25°C See Fig. 90 TJ = 125°C 14 I F = 8.0A 5.0 A TJ = 25°C See Fig. 8.0 TJ = 125°C 15 V R = 200V 138 nC TJ = 25°C See Fig. 360 TJ = 125°C 16 di/dt = 200A/µs — A/µs TJ = 25°C See Fig. — TJ = 125°C 17 VCC=80%(V CES), VGE=20V, L=10µH, R G= 50Ω, ( See fig. 19 ) Pulse width ≤ 80µs; duty factor ≤ 0.1%. C-964 To Order Pulse width 5.0µs, single shot. Previous Datasheet Index Next Data Sheet 5.0 1.6 4.0 1.2 3.0 0.9 2.0 0.6 TC= 90°C TJ = 125°C Power Factor = 0.8 Modulation Depth = 0.8 VCC = 60% of Rated Voltage 1.0 0.3 Total Output Power (kW) Load Current (A) CPV362MK 0 0.0 0 1 10 100 f, Frequency (kHz) Fig. 1 - RMS Current and Output Power, Synthesized Sine Wave 100 IC , C ollector-to-E m itter Current (A ) I C , C ollector-to-E mitte r C urren t (A ) 100 TJ = 2 5 °C 10 TJ = 1 50 °C 1 V G E = 15V 2 0µ s P U LS E W ID TH 0.1 0.1 1 10 TJ = 1 50 °C TJ = 2 5°C V C C = 1 00 V 5 µs P UL S E W ID TH 1 10 5 10 15 V G E , G ate-to-E m itter V olta g e (V ) V C E , C o llector-to-Em itter V oltage (V) Fig. 3 - Typical Transfer Characteristics Fig. 2 - Typical Output Characteristics C-965 To Order 20 Previous Datasheet Index Next Data Sheet CPV362MK 5.0 VGE = 15V VC E , C ollector-to-E mitte r V oltage (V ) Maximum DC Collector Current (A) 6 4 2 A 0 25 50 75 100 125 V G E = 15 V 80 µs P UL S E W ID TH I C = 1 2A 4.0 3.0 IC = 6.0A 2.0 I C = 3.0 A 1.0 150 -60 TC , Case Temperature (°C) -40 -2 0 0 20 40 60 80 100 120 140 160 TC , C ase Tem perature (°C ) Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature Fig. 4 - Maximum Collector Current vs. Case Temperature T h e rm a l R e sp o n s e (Z thJC ) 10 D = 0 .5 0 0 .2 0 1 0 .1 0 0 .0 5 0 .0 2 0 .0 1 PD M 0.1 t S IN G L E P U L S E (T H E R M A L R E S P O N S E ) t2 N o te s : 1 . D u ty fa c to r D = t 0.01 0.000 01 1 1 /t 2 2 . P e a k T J = P D M x Z thJ C + T C 0.0001 0.001 0.01 0.1 1 t 1 , R e c ta n g u lar P u ls e D u ra tio n (s e c ) Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case C-966 To Order 10 Previous Datasheet Index Next Data Sheet CPV362MK 700 500 VG E , G ate-to -E m itter V olta ge (V ) 600 C , Capacitance (pF ) 20 V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc Cies 400 Coes 300 200 Cres 100 0 V C E = 4 80 V I C = 6.0 A 16 12 8 4 0 1 10 1 00 0 4 V C E , C o llector-to-Em itter V oltage (V) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage VCC VGE TC IC 0.19 0.18 A 0.17 10 16 20 1 = 480V = 15V = 25°C = 3.0A 0.20 0 12 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage RG = 50Ω V GE = 15V V CC = 480V Total Switching Losses (mJ) Total Switching Losses (mJ) 0.21 8 Q g , Total G ate C harge (nC ) 20 30 40 50 I C = 6.0A I C = 3.0A I C = 1.5A A 0.1 60 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature (°C) R G , Gate Resistance (Ω) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Case Temperature C-967 To Order Previous Datasheet Index Next Data Sheet CPV362MK 100 = 50Ω = 150°C = 480V = 15V IC , Collector-to-Emitter Current (A) RG TC V CC V GE 0.60 0.40 0.20 A 0.00 0 1 2 3 4 5 6 VGE = 20V TJ = 125°C 10 SAFE OPERATING AREA 1 A 0.1 7 1 I C , Collector-to-Emitter Current (A) 10 100 VCE, Collector-to-Emitter Voltage (V) Fig. 12 - Turn-Off SOA Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 100 Instantaneous Forward Current - I F (A) Total Switching Losses (mJ) 0.80 10 TJ = 150°C TJ = 125°C TJ = 25°C 1 0.1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 Forward Voltage Drop - V FM (V) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current C-968 To Order 1000 Previous Datasheet Index Next Data Sheet CPV362MK 100 100 VR = 200V TJ = 125°C TJ = 25°C VR = 200V TJ = 125°C TJ = 25°C 80 60 I IRRM - (A) t rr - (ns) IF = 16A I F = 8.0A I F = 16A 10 IF = 8.0A 40 I F = 4.0A I F = 4.0A 20 0 100 1 100 1000 di f /dt - (A/µs) di f /dt - (A/µs) 1000 Fig. 15 - Typical Recovery Current vs. dif/dt Fig. 14 - Typical Reverse Recovery vs. dif/dt 500 10000 VR = 200V TJ = 125°C TJ = 25°C VR = 200V TJ = 125°C TJ = 25°C di(rec)M/dt - (A/µs) Q RR - (nC) 400 300 I F = 16A 200 I F = 8.0A IF = 4.0A 1000 IF = 8.0A I F = 16A 100 IF = 4.0A 0 100 1000 di f /dt - (A/µs) Fig. 16 - Typical Stored Charge vs. dif/dt 100 100 di f /dt - (A/µs) Fig. 17 - Typical di(rec)M/dt vs. dif/dt C-969 To Order 1000 Previous Datasheet Index Next Data Sheet CPV362MK 90% Vge +Vge Same type device as D.U.T. Vce 430µF 80% of Vce 90% Ic 10% Vce Ic Ic D.U.T. 5% Ic td(off) tf Eoff = ∫ t1+5µS Vce ic dt t1 Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode) , trr, Qrr, Irr, td(on), tr, td(off), tf t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf trr GATE VOLTAGE D.U.T. 10% +Vg Qrr = Ic ∫ trr id dt tx +Vg tx 10% Vcc 10% Irr Vcc DUT VOLTAGE AND CURRENT Vce Vpk Irr Vcc 10% Ic 90% Ic Ipk Ic DIODE RECOVERY WAVEFORMS tr td(on) 5% Vce t1 ∫ t2 Eon = Vce ie dt t1 DIODE REVERSE RECOVERY ENERGY t2 t3 ∫ t4 Erec = Vd id dt t3 t4 Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining E rec, trr, Qrr, Irr Defining E on, td(on), tr Refer to Section D for the following: Appendix D: Section D - page D-6 Fig. 18e - Macro Waveforms for Test Circuit of Fig. 18a Fig. 19 - Clamped Inductive Load Test Circuit Fig. 20 - Pulsed Collector Current Test Circuit Package Outline 5 - IMS-2 Package (13 pins) C-970 To Order Section D - page D-14