IRF CPV362MK

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PD - 5.032
CPV362MK
IGBT SIP MODULE
Short Circuit Rated UltraFast IGBT
Features
1
• Short Circuit Rated - 10µs @ 125°C, V GE = 15V
Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
TM
• HEXFRED soft ultrafast diodes
• Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve
•
3
Q1
D1
9
Q3
D3
15
4
6
Q2
D2
12
D5
Q5
10
Q4
D4
18
16
D6
Q6
Product Summary
7
13
Output Current in a Typical 20 kHz Motor Drive
3.5 ARMS per phase (1.1 kW total) with T C = 90°C, T J = 125°C, Supply Voltage 360Vdc,
Power Factor 0.8, Modulation Depth 80% (See Figure 1)
19
Description
The IGBT technology is the key to International Rectifier's advanced line of IMS
(Insulated Metal Substrate) Power Modules. These modules are more efficient
than comparable bipolar transistor modules, while at the same time having the
simpler gate-drive requirements of the familiar power MOSFET. This superior
technology has now been coupled to a state of the art materials system that
maximizes power throughput with low thermal resistance. This package is highly
suited to power applications and where space is at a premium.
These new short circuit rated devices are especially suited for motor control and
other totem-pole applications requiring short circuit withstand capability.
IMS-2
Absolute Maximum Ratings
Parameter
VCES
IC @ T C = 25°C
IC @ T C = 100°C
ICM
ILM
IF @ T C = 100°C
IFM
tsc
VGE
VISOL
PD @ T C = 25°C
PD @ T C = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current, each IGBT
Continuous Collector Current, each IGBT
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Isolation Voltage, any terminal to case, 1 min.
Maximum Power Dissipation, each IGBT
Maximum Power Dissipation, each IGBT
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
Units
600
5.7
3.0
11
11
3.4
11
10
± 20
2500
23
9.1
-40 to +150
V
A
µs
V
VRMS
W
°C
300 (0.063 in. (1.6mm) from case)
5-7 lbf•in (0.55 - 0.8 N•m)
Thermal Resistance
Parameter
RθJC (IGBT)
RθJC (DIODE)
RθCS (MODULE)
Wt
Junction-to-Case, each IGBT, one IGBT in conduction
Junction-to-Case, each diode, one diode in conduction
Case-to-Sink, flat, greased surface
Weight of module
C-963
To Order
Typ.
Max.
—
—
0.1
20 (0.7)
5.5
9.0
—
—
Units
°C/W
g (oz)
Revision 2
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CPV362MK
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
VCE(on)
Parameter
Collector-to-Emitter Breakdown Voltage
Temp. Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
VGE(th)
∆VGE(th)/∆TJ
gfe
ICES
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
VFM
Diode Forward Voltage Drop
IGES
Gate-to-Emitter Leakage Current
V(BR)CES
∆V(BR)CES/∆TJ
Min. Typ. Max. Units
Conditions
600
—
—
V
VGE = 0V, I C = 250µA
— 0.37 —
V/°C VGE = 0V, IC = 1.0mA
—
2.3 3.5
IC = 3.0A
V GE = 15V
—
2.7
—
V
IC = 5.7A
See Fig. 2, 5
—
2.2
—
IC = 3.0A, T J = 150°C
3.0
—
5.5
VCE = VGE, IC = 250µA
—
-11
— mV/°C VCE = VGE, IC = 250µA
1.9
3.3
—
S
VCE = 100V, I C = 6.0A
—
—
250
µA
VGE = 0V, V CE = 600V
—
— 1700
VGE = 0V, V CE = 600V, T J = 150°C
—
1.4 1.7
V
IC = 8.0A
See Fig. 13
—
1.3 1.6
IC = 8.0A, T J = 150°C
—
— ±500
nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
tsc
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
td(on)
tr
td(off)
tf
Ets
Cies
Coes
Cres
trr
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Irr
Diode Peak Reverse Recovery Current
Qrr
Diode Reverse Recovery Charge
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During t b
Notes:
Repetitive rating; V GE=20V, pulse width limited
by max. junction temperature. ( See fig. 20)
Min.
—
—
—
—
—
—
—
—
—
—
10
Typ.
17
4.3
6.4
60
20
110
50
0.10
0.10
0.20
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
60
17
230
130
0.29
350
50
4.7
37
55
3.5
4.5
65
124
240
210
Max. Units
Conditions
26
IC = 6.0A
6.8
nC
VCC = 400V
11
See Fig. 8
—
TJ = 25°C
—
ns
IC = 3.0A, V CC = 480V
220
VGE = 15V, R G = 50Ω
110
Energy losses include "tail" and
—
diode reverse recovery.
—
mJ
See Fig. 9, 10, 11, 18
0.27
—
µs
VCC = 360V, T J = 125°C
VGE = 15V, R G = 50Ω, VCPK < 500V
—
TJ = 150°C,
See Fig. 9, 10, 11, 18
—
ns
IC = 3.0A, V CC = 480V
—
VGE = 15V, R G = 50Ω
—
Energy losses include "tail" and
—
mJ
diode reverse recovery.
—
VGE = 0V
—
pF
VCC = 30V
See Fig. 7
—
ƒ = 1.0MHz
55
ns
TJ = 25°C See Fig.
90
TJ = 125°C
14
I F = 8.0A
5.0
A
TJ = 25°C See Fig.
8.0
TJ = 125°C
15
V R = 200V
138
nC
TJ = 25°C See Fig.
360
TJ = 125°C
16
di/dt = 200A/µs
—
A/µs TJ = 25°C See Fig.
—
TJ = 125°C
17
VCC=80%(V CES), VGE=20V, L=10µH,
R G= 50Ω, ( See fig. 19 )
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
C-964
To Order
Pulse width 5.0µs,
single shot.
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5.0
1.6
4.0
1.2
3.0
0.9
2.0
0.6
TC= 90°C
TJ = 125°C
Power Factor = 0.8
Modulation Depth = 0.8
VCC = 60% of Rated Voltage
1.0
0.3
Total Output Power (kW)
Load Current (A)
CPV362MK
0
0.0
0
1
10
100
f, Frequency (kHz)
Fig. 1 - RMS Current and Output Power, Synthesized Sine Wave
100
IC , C ollector-to-E m itter Current (A )
I C , C ollector-to-E mitte r C urren t (A )
100
TJ = 2 5 °C
10
TJ = 1 50 °C
1
V G E = 15V
2 0µ s P U LS E W ID TH
0.1
0.1
1
10
TJ = 1 50 °C
TJ = 2 5°C
V C C = 1 00 V
5 µs P UL S E W ID TH
1
10
5
10
15
V G E , G ate-to-E m itter V olta g e (V )
V C E , C o llector-to-Em itter V oltage (V)
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics
C-965
To Order
20
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CPV362MK
5.0
VGE = 15V
VC E , C ollector-to-E mitte r V oltage (V )
Maximum DC Collector Current (A)
6
4
2
A
0
25
50
75
100
125
V G E = 15 V
80 µs P UL S E W ID TH
I C = 1 2A
4.0
3.0
IC = 6.0A
2.0
I C = 3.0 A
1.0
150
-60
TC , Case Temperature (°C)
-40
-2 0
0
20
40
60
80
100 120 140 160
TC , C ase Tem perature (°C )
Fig. 5 - Collector-to-Emitter Voltage vs.
Case Temperature
Fig. 4 - Maximum Collector Current vs.
Case Temperature
T h e rm a l R e sp o n s e (Z thJC )
10
D = 0 .5 0
0 .2 0
1
0 .1 0
0 .0 5
0 .0 2
0 .0 1
PD M
0.1
t
S IN G L E P U L S E
(T H E R M A L R E S P O N S E )
t2
N o te s :
1 . D u ty fa c to r D = t
0.01
0.000 01
1
1
/t
2
2 . P e a k T J = P D M x Z thJ C + T C
0.0001
0.001
0.01
0.1
1
t 1 , R e c ta n g u lar P u ls e D u ra tio n (s e c )
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
C-966
To Order
10
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CPV362MK
700
500
VG E , G ate-to -E m itter V olta ge (V )
600
C , Capacitance (pF )
20
V GE = 0V,
f = 1MHz
C ies = C ge + C gc , Cce SHORTED
C res = C gc
C oes = C ce + C gc
Cies
400
Coes
300
200
Cres
100
0
V C E = 4 80 V
I C = 6.0 A
16
12
8
4
0
1
10
1 00
0
4
V C E , C o llector-to-Em itter V oltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
VCC
VGE
TC
IC
0.19
0.18
A
0.17
10
16
20
1
= 480V
= 15V
= 25°C
= 3.0A
0.20
0
12
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
RG = 50Ω
V GE = 15V
V CC = 480V
Total Switching Losses (mJ)
Total Switching Losses (mJ)
0.21
8
Q g , Total G ate C harge (nC )
20
30
40
50
I C = 6.0A
I C = 3.0A
I C = 1.5A
A
0.1
60
-60
-40
-20
0
20
40
60
80
100 120 140 160
TC , Case Temperature (°C)
R G , Gate Resistance (Ω)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Case Temperature
C-967
To Order
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CPV362MK
100
= 50Ω
= 150°C
= 480V
= 15V
IC , Collector-to-Emitter Current (A)
RG
TC
V CC
V GE
0.60
0.40
0.20
A
0.00
0
1
2
3
4
5
6
VGE = 20V
TJ = 125°C
10
SAFE OPERATING AREA
1
A
0.1
7
1
I C , Collector-to-Emitter Current (A)
10
100
VCE, Collector-to-Emitter Voltage (V)
Fig. 12 - Turn-Off SOA
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
100
Instantaneous Forward Current - I F (A)
Total Switching Losses (mJ)
0.80
10
TJ = 150°C
TJ = 125°C
TJ = 25°C
1
0.1
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
Forward Voltage Drop - V FM (V)
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
C-968
To Order
1000
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CPV362MK
100
100
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
80
60
I IRRM - (A)
t rr - (ns)
IF = 16A
I F = 8.0A
I F = 16A
10
IF = 8.0A
40
I F = 4.0A
I F = 4.0A
20
0
100
1
100
1000
di f /dt - (A/µs)
di f /dt - (A/µs)
1000
Fig. 15 - Typical Recovery Current vs. dif/dt
Fig. 14 - Typical Reverse Recovery vs. dif/dt
500
10000
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
di(rec)M/dt - (A/µs)
Q RR - (nC)
400
300
I F = 16A
200
I F = 8.0A
IF = 4.0A
1000
IF = 8.0A
I F = 16A
100
IF = 4.0A
0
100
1000
di f /dt - (A/µs)
Fig. 16 - Typical Stored Charge vs. dif/dt
100
100
di f /dt - (A/µs)
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
C-969
To Order
1000
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CPV362MK
90% Vge
+Vge
Same type
device as
D.U.T.
Vce
430µF
80%
of Vce
90% Ic
10% Vce
Ic
Ic
D.U.T.
5% Ic
td(off)
tf
Eoff =
∫
t1+5µS
Vce ic dt
t1
Fig. 18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode) , trr, Qrr, Irr, td(on), tr, td(off), tf
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
trr
GATE VOLTAGE D.U.T.
10% +Vg
Qrr =
Ic
∫
trr
id dt
tx
+Vg
tx
10% Vcc
10% Irr
Vcc
DUT VOLTAGE
AND CURRENT
Vce
Vpk
Irr
Vcc
10% Ic
90% Ic
Ipk
Ic
DIODE RECOVERY
WAVEFORMS
tr
td(on)
5% Vce
t1
∫
t2
Eon = Vce ie dt
t1
DIODE REVERSE
RECOVERY ENERGY
t2
t3
∫
t4
Erec = Vd id dt
t3
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining E rec, trr, Qrr, Irr
Defining E on, td(on), tr
Refer to Section D for the following:
Appendix D: Section D - page D-6
Fig. 18e - Macro Waveforms for Test Circuit of Fig. 18a
Fig. 19 - Clamped Inductive Load Test Circuit
Fig. 20 - Pulsed Collector Current Test Circuit
Package Outline 5 - IMS-2 Package (13 pins)
C-970
To Order
Section D - page D-14