SMBTA06/ MMBTA06 NPN Silicon AF Transistor 3 High breakdown voltage Low collector-emitter saturation voltage Complementary type: SMBTA56 (PNP) MMBTA56 (PNP) 2 1 Type SMBTA06/ MMBTA06 Marking s1G 1=B Pin Configuration 2=E 3=C VPS05161 Package SOT23 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 80 Collector-base voltage VCBO 80 Emitter-base voltage VEBO 4 DC collector current IC Peak collector current ICM Base current IB 100 Peak base current IBM 200 Total power dissipation, TS = 79 °C Ptot 330 mW Junction temperature Tj 150 °C Storage temperature Tstg Value 500 1 Unit V mA A mA -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS 215 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Feb-20-2002 SMBTA06/ MMBTA06 Electrical Characteristics Symbol Parameter Values Unit min. typ. max. V(BR)CEO 80 - - V(BR)CBO 80 - - V(BR)EBO 4 - - ICBO - - 100 nA ICBO - - 20 µA ICEO - - 100 nA DC Characteristics Collector-emitter breakdown voltage V IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 100 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 80 V, IE = 0 Collector cutoff current VCB = 80 V, IE = 0 , TA = 150 °C Collector cutoff current VCE = 60 V, IB = 0 - hFE DC current gain 1) IC = 10 mA, VCE = 1 V 100 - - IC = 100 mA, VCE = 1 V 100 - - Collector-emitter saturation voltage1) VCEsat - - 0.25 V IC = 100 mA, IB = 10 mA Base-emitter voltage 1) VBE(ON) - - 1.2 fT - 100 - MHz Ccb - 12 - pF IC = 100 mA, VCE = 1 V AC Characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 20 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 1) Pulse test: t ≤ 300µs, D = 2% 2 Feb-20-2002 SMBTA06/ MMBTA06 Total power dissipation Ptot = f(TS) Collector current IC = f (VBE) VCE = 1V 360 EHP00815 10 3 mW mA ΙC P tot 300 270 10 2 240 5 100 C 25 C -50 C 210 180 10 1 150 5 120 90 10 0 60 5 30 0 0 15 30 45 60 75 10 -1 °C 150 TS 90 105 120 0 0.5 Transition frequency fT = f (IC) Ptotmax / PtotDC = f (tp ) VCE = 5V EHP00816 Ptot max 5 Ptot DC EHP00817 10 3 MHz tp tp D= T 1.5 V BE Permissible pulse load 10 3 V 1.0 fT 5 T 10 2 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 1 10 2 5 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 10 1 10 0 0 5 10 1 5 10 2 mA 10 3 ΙC tp 3 Feb-20-2002 SMBTA06/ MMBTA06 Base-emitter saturation voltage Collector-emitter saturation voltage IC = f (VBEsat ), hFE = 10 IC = f (VCEsat), h FE = 10 EHP00818 10 3 EHP00819 10 3 mA 100 ˚C 25 ˚C -50 ˚C ΙC 10 2 Ι C mA 5 100 C 25 C -50 C 10 2 5 10 1 5 10 1 10 0 5 5 10 -1 0.5 0 V 1.0 10 0 1.5 0.0 0.1 0.2 0.3 0.4 0.5 0.6 Collector cutoff current ICBO = f (TA ) DC current gain hFE = f (I C) VCB = 80V VCE = 1V EHP00820 10 4 nA EHP00821 10 3 Ι CBO h FE max 10 3 5 0.8 V CEsat V BEsat 100 C 10 2 10 5 V 25 C 2 -50 C typ 10 1 5 10 1 10 0 5 10 -1 0 50 10 0 -1 10 C 150 100 10 0 10 1 10 2 mA 10 3 ΙC TA 4 Feb-20-2002