BA 597 BA 597 Silicon PIN Diode Preliminary Data ● ● RF switch, RF attenuator for frequencies above 10 MHz Very low IM distortion Type Ordering Code (taped) Pin Configuration Marking 1 2 Package BA 597 UPON INQUIRY C SOD-323 A yellow/R Maximum Ratings Parameter Symbol Values Unit Reverse voltage VR 50 V Forward current IF 100 mA Total power dissipation TS ≤ 40 °C1) Ptot 250 mW Junction temperature Tj 150 °C Storage temperature range Tstg – 55 … + 150 °C 1) Package mounted on aluminum 15 mm x 16.7 mm x 0.7 mm. Semiconductor Group 1 10.94 BA 597 Characteristics per Diode at TA = 25 °C, unless otherwise specified. Parameter Symbol Value min. Reverse current VR = 30 V IR Forward voltage IF = 100 mA VF Diode capacitance VR = 10 V, f = 1 MHz VR = 0 V, f = 100 MHz CT Forward resistance IF = 1.5 mA, f = 100 MHz IF = 10 mA, f = 100 MHz rf Charge carrier lifetime τL max. nA – – 20 V – 0.9 – pF – – 0.52 0.27 – – Ω – – 22 4.2 – – – 2.5 – µs IF = 10 mA, IR = 6 mA, IR = 3 mA Semiconductor Group typ. Unit 2 BA 597 Diode capacitance CT = f (VR) f = 1 MHz, 100 MHz Forward resistance rt = (IF), f = 100 MHz 3rd Harmonic intercept point vs forward current f = 100 MHz Semiconductor Group 3