SIMOPAC® Module BSM 101 AR VDS = 50 V ID = 200 A R DS(on) = 3.0 mΩ ● ● ● ● ● ● Power module Single switch N channel Enhancement mode Package with insulated metal base plate 1) Package outline/Circuit diagram: 1 Type Ordering Code BSM 101 AR C67076-S1018-A2 Maximum Ratings Parameter Symbol Values Unit Drain-source voltage VDS 50 V Drain-gate voltage, RGS = 20 kΩ VDGR 50 Gate-source voltage VGS ± 20 Continuous drain current, TC = 105 ˚C ID 200 Pulsed drain current, TC = 105 ˚C ID puls 600 Operating and storage temperature range Tj, Tstg – 55 … + 150 ˚C Power dissipation, TC = 25 ˚C Ptot 700 W Thermal resistance, chip-case RthJC ≤ 0.18 K/W Insulation test voltage , t = 1 min. Vis 2500 Vac Creepage distance, drain-source – 16 mm Clearance, drain-source – 11 DIN humidity category, DIN 40 040 – F IEC climatic category, DIN IEC 68-1 – 55/150/56 2) 1) 2) A – See chapter Package Outline and Circuit Diagrams. Insulation test voltage between drain and base plate referred to standard climate 23/50 in acc. with DIN 50 014, IEC 146, para. 492.1. Semiconductor Group 17 03.96 BSM 101 AR Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain-source breakdown voltage VGS = 0, ID = 0.25 mA V(BR)DSS Gate threshold voltage VGS = VDS, ID = 1 mA VGS(th) Zero gate voltage drain current VDS = 50 V, VGS = 0 Tj = 25 ˚C Tj = 125 ˚C I DSS Gate-source leakage current VGS = 20 V, VDS = 0 IGSS Drain-source on-state resistance VGS = 10 V, ID = 200 A R DS(on) V 50 – – 2.1 3.0 4.0 µA – – 50 300 250 1000 – 10 100 nA mΩ – 2.6 3.0 gfs 156 200 – S Input capacitance VGS = 0, VDS = 25 V, f = 1 MHz Ciss – 18 24 nF Output capacitance VGS = 0, VDS = 25 V, f = 1 MHz Coss – 9 12 Reverse transfer capacitance VGS = 0, VDS = 25 V, f = 1 MHz Crss – 3 4 Turn-on Time ton (ton = td (on) + tr) VCC = 40 V, VGS = 10 V ID = 200 A, RG = 3.3 Ω td (on) – 280 – tr – 220 – Turn-off Time toff (toff = td (off) + tf) VCC = 40 V, VGS = 10 V ID = 200 A, RG = 3.3 Ω td (off) – 220 – tf – 60 – Dynamic Characteristics Forward transconductance VDS ≥ 2 × ID × RDS(on) max., ID = 200 A Semiconductor Group 18 ns BSM 101 AR Electrical Characteristics (cont’d) at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. Reverse diode Continuous reverse drain current TC = 25 ˚C IS Pulsed reverse drain current TC = 25 ˚C ISM Diode forward on-voltage IF = 400 A , VGS = 0 VSD Reverse recovery time trr IF = IS, diF/dt = 100 A/µs, VR = 30 V Reverse recovery charge IF = IS, diF/dt = 100 A/µs, VR = 30 V Semiconductor Group A – – 200 – – 600 1.25 1.6 400 – V ns µC Qrr 3.5 19 BSM 101 AR Characteristics at Tj = 25 ˚C, unless otherwise specified. Power dissipation Ptot = f (TC) parameter: Tj = 150 ˚C Typ. output characteristics ID = f (VDS) parameter: = 80 µs pulse test Safe operating area ID = f (VDS) parameter: single pulse, TC = 25 ˚C, Tj ≤ 150 ˚C Typ. transfer characteristic ID = f (VGS) parameter: = 80 µs pulse test, VDS = 25 V Semiconductor Group 20 BSM 101 AR Continuous drain-source current ID = f (TC) parameter: VGS ≥ 10 V, T j = 150 ˚C Drain-source breakdown voltage V(BR)DSS = b × V(BR)DSS (25 ˚C) Drain source on-state resistance RDS(on) = f (ID) parameter: VGS Drain source on-state resistance RDS (on) = f (Tj) parameter: ID = 200 A; VGS = 10 V Semiconductor Group 21 BSM 101 AR Typ. capacitances C = f (VDS) parameter: VGS = 0, f = 1 MHz Semiconductor Group Gate threshold voltage VGS(th) = f (Tj) parameter: VDS = VGS, ID = 1 mA (spread) 22 BSM 101 AR Transient thermal impedance ZthJC = f (tp) parameter: D = tp/T Typ. gate charge VGS = f (QGate) parameter: IDpuls = 330 A Semiconductor Group 23