Differential Magnetoresistive Sensor FP 210 L 100-22 Features • High operating temperature • High output voltage • Robust cylindrical housing • Biasing magnet build in • Signal amplitude independent of speed • Easily connectable Typical applications • Detection of speed • Detection of position • Detection of sense of rotation • Angle encoder • Linear position sensing Dimensions in mm Type Ordering Code FP 210 L 100-22 Q65210-L100-W4 The differential magnetoresistive sensor FP 210 L 100-22 consists of two series coupled L-type InSb/NiSb semiconductor resistors. The resistance value of the MRs, which are mounted onto an insulated ferrite substrate, can be magnetically controlled. The sensor is encapsulated in a plastic package with three in-line contacts extending from the base. The basic resistance of the total system in the unbiased state is 2×100 Ω. A permanent magnet which supplies a biasing magnetic field is built into the housing. Semiconductor Group 1 07.96 FP 210 L 100-22 Maximum ratings Parameter Symbol Value Unit Operating temperature TA Tstg Ptot VIN VI – 40/ +140 °C – 40/ +150 °C 400 mW 7.5 V > 100 V GthA ≥5 mW/K VIN N R1-3 5 V 220…400 Ω M V0 ≤ 10 % ≤ 130 mV Open circuit output voltage5) (VIN N and δ = 0.2 mm) Vout pp > 1000 mV Cut-off frequency fc > 20 kHz Storage temperature Power dissipation1) Supply voltage2) Insulation voltage between terminals and casing Thermal conductivity Characteristics (TA = 25 °C) Nominal supply voltage Total resistance, (δ = ∞, I ≤ 1 mA) Center symmetry3) (δ = ∞) Offset voltage4) (at VIN N and δ = ∞) Measuring arrangements By approaching a soft iron part close to the sensor a change in its resistance is obtained. The potential divider circuit of the magneto resistor causes a reduction in the temperature dependence of the output voltage VOUT. 1) Corresponding to diagram Ptot = f(TA) 2) Corresponding to diagram VIN = f(TA) 3) R1 – 2 – R2 – 3 M = ---------------------------- × 100% for R1-2 > R2-3 R1 – 2 4) Corresponding to measuring circuit in Fig. 2 5) Corresponding to measuring circuit in Fig. 2 and arrangement as shown in Fig. 1 Semiconductor Group 2 FP 210 L 100-22 1. Digital revolution counting For digital revolution counting, the sensor should be actuated by a magnetically soft iron toothed wheel. The tooth spacing should correspond to about twice the magneto resistor intercenter spacing (see Fig. 1). The two resistors of the sensor are supplemented by two additional resistors in order to obtain the sensor output voltage as a bridge voltage VOUT. The output voltage VOUT without excitation then is 0 V when the offset is compensated. Fig. 1 Schematic representation of a toothed wheel actuating an FP 210 L 100-22 Fig. 2 Measuring circuit and output voltage Vout waveform Semiconductor Group 3 FP 210 L 100-22 2. Linear distance measurement To convert small distances into a proportional electric signal, a small soft iron part of definite width (e.g. b = 1.8 mm) is moved over the face of the sensor. Proportional signals for distances up to 1.5 mm can be obtained in this way. The sinusoidal output signal gives a voltage proportional to distance in the zero crossover region (see Fig. 3). Fig. 3 Arrangement for analogue application Maximum supply voltage versus temperature VIN = f(TA), δ = ∞ Semiconductor Group 4 FP 210 L 100-22 Output voltage (typical) versus temperature VOUTpp = f(TA), δ = 0.2 mm VOUTpp at TA = 25 °C ^= 100% Output voltage (typical) versus airgap VOUTpp = f(δ), TA = 25 °C VOUTpp at δ = 0.2 mm ^= 100% Total resistance (typical) versus temperature R1-3 = f(TA), δ = ∞ Max. power dissipation versus temperature Ptot = f(TA), δ = ∞ Semiconductor Group 5