2N6756, 2N6758, 2N6760 and 2N6762 Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/542 DESCRIPTION This family of 2N6756, 2N6758, 2N6760 and 2N6762 switching transistors are military qualified up to the JANTXV level for high-reliability applications. Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages. Important: For the latest information, visit our website http://www.microsemi.com. TO-204AA (TO-3) Package FEATURES • JEDEC registered 2N6756, 2N6758, 2N6760 and 2N6762 number series. • JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/542. • RoHS compliant versions available (commercial grade only). (See part nomenclature for all available options.) APPLICATIONS / BENEFITS • • Low-profile metal can design. Military and other high-reliability applications. MAXIMUM RATINGS @ T A = +25ºC unless otherwise stated Parameters / Test Conditions Symbol Operating & Storage Junction Temperature Range Thermal Resistance Junction-to-Case Total Power Dissipation @ T A = +25 °C (1) @ T C = +25 °C Drain-Source Voltage, dc 2N6756 2N6758 2N6760 2N6762 Gate-Source Voltage, dc (2) Drain Current, dc @ T C = +25 ºC 2N6756 2N6758 2N6760 2N6762 (2) Drain Current, dc @ T C = +100 ºC 2N6756 2N6758 2N6760 2N6762 (3) Off-State Current (Peak Total Value) 2N6756 2N6758 2N6760 2N6762 Source Current 2N6756 2N6758 2N6760 2N6762 TJ & T stg R ӨJC PT V DS V GS I D1 I D2 I DM IS Value Unit -55 to +150 °C 1.67 4 75 100 200 400 500 ± 20 14.0 9.0 5.5 4.5 9.0 6.0 3.5 3.0 56 36 22 18 14.0 9.0 5.5 4.5 o C/W W V V A A A MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 A Website: www.microsemi.com Notes featured on next page. T4-LDS-0111, Rev. 3 (121465) ©2012 Microsemi Corporation Page 1 of 9 2N6756, 2N6758, 2N6760 and 2N6762 NOTES: 1. 2. Derated linearly by 0.6 W/ºC for T C > +25 ºC. The following formula derives the maximum theoretical ID limit. ID is limited by package and internal wires and may be limited by pin diameter: 3. I DM = 4 x I D1 as calculated in note 2. MECHANICAL and PACKAGING • • • • • CASE: TO-3 metal can. TERMINALS: Solder dipped (Sn63/Pb37) over nickel plated alloy 52. RoHS compliant matte-tin plating is available on commercial grade only. MARKING: Manufacturer's ID, part number, date code. WEIGHT: Approximately 12.7 grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 2N6756 (e3) Reliability Level JAN = JAN Level JANTX = JANTX Level JANTXV = JANTXV Level Blank = Commercial RoHS Compliance e3 = RoHS compliant (available on commercial grade only) Blank = non-RoHS compliant JEDEC type number (see Electrical Characteristics table) Symbol di/dt ID IF RG TC V DD V DS V GS SYMBOLS & DEFINITIONS Definition Rate of change of diode current while in reverse-recovery mode, recorded as maximum value. Drain current Forward current Gate drive impedance Case Temperature Drain supply voltage Drain source voltage Gate source voltage T4-LDS-0111, Rev. 3 (121465) ©2012 Microsemi Corporation Page 2 of 9 2N6756, 2N6758, 2N6760 and 2N6762 ELECTRICAL CHARACTERISTICS @ T A = +25 °C, unless otherwise noted Parameters / Test Conditions OFF CHARACTERISTICS Drain-Source Breakdown Voltage 2N6756 2N6758 2N6760 2N6762 V GS = 0 V, I D = 1.0 mA Gate-Source Voltage (Threshold) V DS ≥ V GS , I D = 0.25 mA V DS ≥ V GS , I D = 0.25 mA, T J = +125°C V DS ≥ V GS , I D = 0.25 mA, T J = -55°C Gate Current V GS = ± 20 V, V DS = 0 V V GS = ± 20 V, V DS = 0 V, T J = +125°C Drain Current V GS = 0 V, V DS = 80 V V GS = 0 V, V DS = 160 V V GS = 0 V, V DS = 320 V V GS = 0 V, V DS = 400 V Drain Current V GS = 0 V, V DS = 100 V, T J = +125 °C V GS = 0 V, V DS = 200 V, T J = +125 °C V GS = 0 V, V DS = 400 V, T J = +125 °C V GS = 0 V, V DS = 500 V, T J = +125 °C Drain Current V GS = 0 V, V DS V GS = 0 V, V DS V GS = 0 V, V DS V GS = 0 V, V DS = 80 V, T J = +125 °C = 160 V, T J = +125 °C = 320 V, T J = +125 °C = 400 V, T J = +125 °C V (BR)DSS 100 200 400 500 2.0 1.0 Max. Unit V 4.0 V 5.0 I GSS1 I GSS2 ±100 ±200 nA 2N6756 2N6758 2N6760 2N6762 I DSS1 25 µA 2N6756 2N6758 2N6760 2N6762 I DSS2 1.0 mA 2N6756 2N6758 2N6760 2N6762 I DSS3 0.25 mA r DS(on)1 0.18 0.40 1.00 1.50 Ω r DS(on)2 .21 .49 1.22 1.80 Ω r DS(on)3 0.34 0.8 2.2 3.3 V SD 1.8 1.6 1.5 1.4 2N6756 2N6758 2N6760 2N6762 Static Drain-Source On-State Resistance V GS = 10 V, I D = 14.0 A pulsed V GS = 10 V, I D = 9.0 A pulsed V GS = 10 V, I D = 5.5 A pulsed V GS = 10 V, I D = 4.5 A pulsed 2N6756 2N6758 2N6760 2N6762 T4-LDS-0111, Rev. 3 (121465) Min. V GS(th)1 V GS(th)2 V GS(th)3 Static Drain-Source On-State Resistance V GS = 10 V, I D = 9.0 A pulsed V GS = 10 V, I D = 6.0 A pulsed V GS = 10 V, I D = 3.5 A pulsed V GS = 10 V, I D = 3.0 A pulsed Static Drain-Source On-State Resistance T J = +125°C V GS = 10 V, I D = 9.0 A pulsed V GS = 10 V, I D = 6.0 A pulsed V GS = 10 V, I D = 3.5 A pulsed V GS = 10 V, I D = 3.0 A pulsed Diode Forward Voltage V GS = 0 V, I D = 14.0 A pulsed V GS = 0 V, I D = 9.0 A pulsed V GS = 0 V, I D = 5.5 A pulsed V GS = 0 V, I D = 4.5 A pulsed Symbol 2N6756 2N6758 2N6760 2N6762 2N6756 2N6758 2N6760 2N6762 ©2012 Microsemi Corporation Ω V Page 3 of 9 2N6756, 2N6758, 2N6760 and 2N6762 ELECTRICAL CHARACTERISTICS @ T A = +25 °C, unless otherwise noted (continued) DYNAMIC CHARACTERISTICS Parameters / Test Conditions Gate Charge: On-State Gate Charge V GS = 10 V, I D = 14.0 A, V DS = 80 V V GS = 10 V, I D = 9.0 A, V DS = 160 V V GS = 10 V, I D = 5.5 A, V DS = 320 V V GS = 10 V, I D = 4.5 A, V DS = 400 V Symbol 2N6756 2N6758 2N6760 2N6762 Gate to Source Charge V GS = 10 V, I D = 14.0 A, V DS = 80 V V GS = 10 V, I D = 9.0 A, V DS = 160 V V GS = 10 V, I D = 5.5 A, V DS = 320 V V GS = 10 V, I D = 4.5 A, V DS = 400 V 2N6756 2N6758 2N6760 2N6762 Gate to Drain Charge V GS = 10 V, I D = 14.0 A, V DS = 80 V V GS = 10 V, I D = 9.0 A, V DS = 160 V V GS = 10 V, I D = 5.5 A, V DS = 320 V V GS = 10 V, I D = 4.5 A, V DS = 400 V 2N6756 2N6758 2N6760 2N6762 Min. Max. Unit Q g(on) 35 39 39 40 nC Q gs 10 5.7 6.0 6.0 nC Q gd 15 20 20 20 nC Max. Unit t d(on) 35 35 30 30 ns tr 80 80 40 40 ns t d(off) 60 60 80 80 ns tf 45 40 35 30 ns t rr 300 500 700 900 ns SWITCHING CHARACTERISTICS Parameters / Test Conditions Turn-on delay time I D = 14.0 A, V GS = +10 V, R G = 7.5 Ω, V DD = 50 V I D = 9.0 A, V GS = +10 V, R G = 7.5 Ω, V DD = 100 V I D = 5.5 A, V GS = +10 V, R G = 7.5 Ω, V DD = 200 V I D = 4.5 A, V GS = +10 V, R G = 7.5 Ω, V DD = 250 V Rinse time I D = 14.0 A, V GS = +10 V, R G = 7.5 Ω, V DD = 50 V I D = 9.0 A, V GS = +10 V, R G = 7.5 Ω, V DD = 100 V I D = 5.5 A, V GS = +10 V, R G = 7.5 Ω, V DD = 200 V I D = 4.5 A, V GS = +10 V, R G = 7.5 Ω, V DD = 250 V Turn-off delay time I D = 14.0 A, V GS = +10 V, R G = 7.5 Ω, V DD = 50 V I D = 9.0 A, V GS = +10 V, R G = 7.5 Ω, V DD = 100 V I D = 5.5 A, V GS = +10 V, R G = 7.5 Ω, V DD = 200 V I D = 4.5 A, V GS = +10 V, R G = 7.5 Ω, V DD = 250 V Fall time I D = 14.0 A, V GS = +10 V, R G = 7.5 Ω, V DD = 50 V I D = 9.0 A, V GS = +10 V, R G = 7.5 Ω, V DD = 100 V I D = 5.5 A, V GS = +10 V, R G = 7.5 Ω, V DD = 200 V I D = 4.5 A, V GS = +10 V, R G = 7.5 Ω, V DD = 250 V Diode Reverse Recovery Time di/dt = 100 A/µs, V DD ≤ 30 V, I D di/dt = 100 A/µs, V DD ≤ 30 V, I D di/dt = 100 A/µs, V DD ≤ 30 V, I D di/dt = 100 A/µs, V DD ≤ 30 V, I D T4-LDS-0111, Rev. 3 (121465) = 14.0 A = 9.0 A = 5.5 A = 4.5 A Symbol 2N6756 2N6758 2N6760 2N6762 2N6756 2N6758 2N6760 2N6762 2N6756 2N6758 2N6760 2N6762 2N6756 2N6758 2N6760 2N6762 2N6756 2N6758 2N6760 2N6762 ©2012 Microsemi Corporation Min. Page 4 of 9 2N6756, 2N6758, 2N6760 and 2N6762 Thermal Response (ZθJC) GRAPHS t 1 , Rectangle Pulse Duration (seconds) FIGURE 1 Thermal Response Curves T4-LDS-0111, Rev. 3 (121465) ©2012 Microsemi Corporation Page 5 of 9 2N6756, 2N6758, 2N6760 and 2N6762 GRAPHS (continued) ID DRAIN CURRENT (AMPERES) ID DRAIN CURRENT (AMPERES) FIGURE 2 Maximum Drain Current vs Case Temperature T C CASE TEMPERATURE (ºC) For 2N6758 ID DRAIN CURRENT (AMPERES) ID DRAIN CURRENT (AMPERES) T C CASE TEMPERATURE (ºC) For 2N6756 T C CASE TEMPERATURE (ºC) For 2N6760 T4-LDS-0111, Rev. 3 (121465) ©2012 Microsemi Corporation T C CASE TEMPERATURE (ºC) For 2N6762 Page 6 of 9 2N6756, 2N6758, 2N6760 and 2N6762 GRAPHS (continued) ID DRAIN CURRENT (AMPERES) FIGURE 3 Safe Operating Area ID DRAIN CURRENT (AMPERES) V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) FOR 2N6756 V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) FOR 2N6758 T4-LDS-0111, Rev. 3 (121465) ©2012 Microsemi Corporation Page 7 of 9 2N6756, 2N6758, 2N6760 and 2N6762 GRAPHS (continued) ID DRAIN CURRENT (AMPERES) FIGURE 3 Safe Operating Area ID DRAIN CURRENT (AMPERES) V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) FOR 2N6760 V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) FOR 2N6762 T4-LDS-0111, Rev. 3 (121465) ©2012 Microsemi Corporation Page 8 of 9 2N6756, 2N6758, 2N6760 and 2N6762 PACKAGE DIMENSIONS NOTE: INCHES DIM 1. Dimensions are in inches. MIN MAX 2. Millimeters are given for general information only. A .875 3. These dimensions should be measured at points .050 B .060 .135 inch (1.27 mm) and .055 inch (1.40 mm) below C .250 .360 seating plane. When gauge is not used measurement D .312 .500 will be made at the seating plane. D2 .050 4. The seating plane of the header shall be flat within E .038 .043 .001 inch (0.03 mm) concave to .004 inch (0.10 mm) F .131 .188 G 1.177 1.197 convex inside a .930 inch (23.62 mm) diameter circle H .655 .675 on the center of the header and flat within .001 inch J .205 .225 (0.03 mm) concave to .006 inch (0.15 mm) convex K .420 .440 overall. L .495 .525 5. Mounting holes shall be deburred on the seating M .151 .161 plane side. 6. Drain is electrically connected to the case. 7. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. MILLIMETERS MIN MAX 22.23 1.52 3.43 6.35 9.14 7.92 12.70 1.27 0.97 1.09 3.33 4.78 29.90 30.40 16.64 17.15 5.21 5.72 10.67 11.18 12.57 13.34 3.84 4.09 NOTES DIA. Radius 3, 5 3, 5 Radius DIA. SCHEMATIC T4-LDS-0111, Rev. 3 (121465) ©2012 Microsemi Corporation Page 9 of 9