IRF CPV363MF

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PD - 5.023B
CPV363MF
Fast IGBT
IGBT SIP MODULE
1
Features
•
•
•
•
Fully isolated printed circuit board mount package
Switching-loss rating includes all "tail" losses
TM
HEXFRED soft ultrafast diodes
Optimized for medium operating frequency (1 to
10kHz) See Fig. 1 for Current vs. Frequency curve
3
D1
Q1
9
D3
Q3
15
4
6
D2
Q2
Product Summary
12
D5
Q5
10
D4
Q4
7
18
16
D6
Q6
13
19
Output Current in a Typical 5.0 kHz Motor Drive
7.65 ARMS per phase (2.4 kW total) with TC = 90°C, TJ = 125°C, Supply Voltage 360Vdc,
Power Factor 0.8, Modulation Depth 80% (See Figure 1)
Description
The IGBT technology is the key to International Rectifier's advanced line of
IMS (Insulated Metal Substrate) Power Modules. These modules are more
efficient than comparable bipolar transistor modules, while at the same time
having the simpler gate-drive requirements of the familiar power MOSFET.
This superior technology has now been coupled to a state of the art materials
system that maximizes power throughput with low thermal resistance. This
package is highly suited to motor drive applications and where space is at a
premium.
IMS-2
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
VISOL
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current, each IGBT
Continuous Collector Current, each IGBT
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Isolation Voltage, any terminal to case, 1 min.
Maximum Power Dissipation, each IGBT
Maximum Power Dissipation, each IGBT
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
Units
600
16
8.7
50
50
6.1
50
±20
2500
36
14
-40 to +150
V
A
V
VRMS
W
°C
300 (0.063 in. (1.6mm) from case)
5-7 lbf•in (0.55-0.8 N•m)
Thermal Resistance
Parameter
RθJC (IGBT)
RθJC (DIODE)
RθCS (MODULE)
Wt
Junction-to-Case, each IGBT, one IGBT in conduction
Junction-to-Case, each diode, one diode in conduction
Case-to-Sink, flat, greased surface
Weight of module
Typ.
Max.
—
—
0.1
20 (0.7)
3.5
5.5
—
—
Units
°C/W
g (oz)
Revision 1
C-149
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CPV363MF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
VCE(on)
Parameter
Collector-to-Emitter Breakdown Voltage
Temp. Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
VGE(th)
∆VGE(th)/∆TJ
gfe
ICES
Gate Threshold Voltage
Temp. Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
VFM
Diode Forward Voltage Drop
IGES
Gate-to-Emitter Leakage Current
V(BR)CES
∆V(BR)CES/∆TJ
Min. Typ. Max. Units
Conditions
600
—
—
V
VGE = 0V, IC = 250µA
— 0.69 — V/°C VGE = 0V, IC = 1.0mA
—
1.5 1.6
IC = 8.7A
VGE = 15V
—
1.9
—
V
IC = 16A
See Fig. 2, 5
—
1.6
—
IC = 8.7A, TJ = 150°C
3.0
—
5.5
VCE = VGE, IC = 250µA
—
-11
— mV/°C VCE = VGE, IC = 250µA
6.0 8.0
—
S
VCE = 100V, IC = 8.7A
—
— 250
µA
VGE = 0V, VCE = 600V
—
— 2500
VGE = 0V, VCE = 600V, TJ = 150°C
—
1.4 1.7
V
IC = 12A
See Fig. 13
—
1.3 1.6
IC = 12A, TJ = 150°C
—
— ±500 nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
Cies
Coes
Cres
trr
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Irr
Diode Peak Reverse Recovery Current
Qrr
Diode Reverse Recovery Charge
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During tb
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
23
2.4
9.2
25
21
210
300
0.44
2.0
2.4
25
21
280
550
3.4
670
100
10
42
80
3.5
5.6
80
220
180
116
Max. Units
Conditions
30
IC = 16A
5.9
nC VCC = 400V
15
See Fig. 8
—
TJ = 25°C
—
ns
IC = 8.7A, VCC = 480V
300
VGE = 15V, RG = 23Ω
450
Energy losses include "tail" and
—
diode reverse recovery
—
mJ See Fig. 9, 10, 11, 18
3.2
—
TJ = 150°C,
See Fig. 9, 10, 11, 18
—
ns
IC = 8.7A, VCC = 480V
—
VGE = 15V, RG = 23Ω
—
Energy losses include "tail" and
—
mJ diode reverse recovery
—
VGE = 0V
—
pF
VCC = 30V
See Fig. 7
—
ƒ = 1.0MHz
60
ns
TJ = 25°C See Fig.
120
TJ = 125°C
14
IF = 12A
6.0
A
TJ = 25°C See Fig.
10
TJ = 125°C
15
V R = 200V
180
nC TJ = 25°C See Fig.
600
TJ = 125°C
16
di/dt = 200A/µs
—
A/µs TJ = 25°C See Fig.
—
TJ = 125°C
17
Notes:
Repetitive rating; V GE=20V, pulse width
limited by max. junction temperature.
( See fig. 20 )
VCC=80%(VCES), VGE=20V, L=10µH,
RG= 23Ω, ( See fig. 19 )
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
C-150
To Order
Pulse width 5.0µs,
single shot.
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12
3.7
9
2.8
6
1.9
TC = 90°C
TJ = 125°C
Power Factor = 0.8
Modulation Depth = 0.8
VC C = 60% of Rated Voltage
3
0.9
Total O utpu t P ow e r (kW )
Lo ad C urrent (A )
CPV363MF
S
0
0
0.1
1
10
100
f, F re quenc y (kH z)
Fig. 1 - RMS Current and Output Power, Synthesized Sine Wave
10 00
IC , C ollector-to-E m itter Current (A )
I C , C ollector-to-E mitter C urrent (A )
1000
TJ = 25 °C
100
TJ = 15 0°C
10
V G E = 1 5V
2 0µ s P U LS E W IDTH
1
1
1 00
T J = 15 0°C
10
T J = 25 °C
1
V C C = 1 00 V
5 µs P UL S E W ID TH
0.1
5
10
10
15
V G E , G ate-to-E m itter V olta g e (V )
V C E , C ollector-to-E m itter V oltage (V )
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics
C-151
To Order
20
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CPV363MF
3.5
V G E = 15 V
V C E , C ollector-to-E m itter V oltage (V )
Maxim um D C Collector C urrent (A )
40
30
20
10
VG E = 1 5 V
80 µs P UL S E W ID TH
3.0
I C = 34 A
2.5
I C = 17 A
2.0
I C = 8.5A
1.5
1.0
0
25
50
75
100
125
-60
150
T C , C ase Tem perature (°C )
-40
-20
0
20
40
60
80
1 00 120 140 160
TC , C ase Tem perature (°C )
Fig. 5 - Collector-to-Emitter Voltage vs.
Case Temperature
Fig. 4 - Maximum Collector Current vs.
Case Temperature
The rm al R espo nse (Z th JC )
10
D = 0 .5 0
1
0.2 0
0.1 0
0 .05
PD M
0.0 2
0.0 1
0.1
t
S ING L E PU LS E
(TH E R MAL RE S PO N SE )
t2
N o te s :
1 . D u ty fa c to r D = t
0.01
0.00001
1
1
/t
2
2 . P e a k T J = P D M x Z thJ C + T C
0.0001
0.001
0.01
0.1
1
t 1 , R ectangular Pulse D uration (sec)
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
C-152
To Order
10
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CPV363MF
1 4 00
20
1 2 00
V G E , G ate-to-E m itter V oltage (V)
V GE = 0V,
f = 1MHz
C ies = C ge + C gc , Cce SHORTED
C res = C gc
C oes = C ce + C gc
16
1 0 00
C , C a pac itanc e (pF )
V C E = 40 0 V
I C = 1 7A
Cies
12
8 00
Coes
6 00
4 00
Cres
2 00
0
8
4
0
1
10
10 0
0
5
V C E , C o lle c to r-to -E m itte r V o lta g e (V )
15
20
25
30
Q g , Total G ate C harge (nC )
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
10
VC C
VG E
TC
IC
2.6
= 48 0V
= 1 5V
= 25°C
= 17 A
I C = 3 4A
To ta l S w itc hing Lo sse s (m J)
2.7
T o ta l S w itc h in g L o s s e s (m J)
10
2.5
2.4
2.3
I C = 1 7A
I C = 8.5A
R G = 23 Ω
V GE = 1 5V
V CC = 48 0V
1
2.2
0
10
20
30
40
50
-60
60
R G , G a te R e s is ta n c e ( Ω )
-40
-20
0
20
40
60
80
1 00 120 140 160
TC , C a se T e m p e ra tu re (°C )
W
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Case Temperature
C-153
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CPV363MF
1000
= 23 Ω
= 1 50°C
= 48 0V
= 1 5V
I C , C o lle cto r-to -E m itte r C u rre n t (A )
RG
TC
VCC
VGE
8
6
4
VGGE E= 20 V
T J = 125 °C
100
S A FE O P E RA TIN G A RE A
10
1
2
0
10
20
30
1
40
10
100
V C E , C o lle cto r-to-E m itte r V olta g e (V )
I C , C o lle c to r-to -E m itte r C u rre n t (A )
Fig. 12 - Turn-Off SOA
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
100
Instantaneous Forward Current - I F (A)
T o ta l S w itc h in g L o s s e s (m J )
10
TJ = 150°C
10
TJ = 125°C
TJ = 25°C
1
0.4
0.8
1.2
1.6
2.0
2.4
Forward Voltage Drop - V FM (V)
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
C-154
To Order
1000
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CPV363MF
100
160
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
120
I F = 24A
I IRRM - (A)
t rr - (ns)
IF = 24A
I F = 12A
80
IF = 6.0A
I F = 12A
10
IF = 6.0A
40
0
100
1
100
1000
di f /dt - (A/µs)
1000
Fig. 15 - Typical Recovery Current vs. dif/dt
Fig. 14 - Typical Reverse Recovery vs. dif/dt
10000
600
VR = 200V
TJ = 125°C
TJ = 25°C
di(rec)M/dt - (A/µs)
VR = 200V
TJ = 125°C
TJ = 25°C
Q RR - (nC)
400
I F = 24A
I F = 12A
200
1000
IF = 6.0A
IF = 12A
100
IF = 24A
IF = 6.0A
0
100
di f /dt - (A/µs)
1000
di f /dt - (A/µs)
10
100
1000
di f /dt - (A/µs)
Fig. 16 - Typical Stored Charge vs. dif/dt
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
C-155
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CPV363MF
90% Vge
+Vge
Vce
Same type
device as
D.U.T.
Ic
90% Ic
10% Vce
Ic
5% Ic
430µF
80%
of Vce
td(off)
D.U.T.
tf
Eoff =
Fig. 18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t1
∫
t1+5µS
Vce ic dt
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
trr
GATE VOLTAGE D.U.T.
10% +Vg
Qrr =
Ic
∫
trr
id dt
tx
+Vg
tx
10% Vcc
10% Irr
Vcc
DUT VOLTAGE
AND CURRENT
Vce
Vpk
Irr
Vcc
10% Ic
90% Ic
Ipk
Ic
DIODE RECOVERY
WAVEFORMS
tr
td(on)
5% Vce
t1
∫
t2
Eon = Vce ie dt
t1
DIODE REVERSE
RECOVERY ENERGY
t2
t3
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
∫
t4
Erec = Vd id dt
t3
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
Defining Erec, trr, Qrr, Irr
Refer to Section D for the following:
Appendix D: Section D - page D-6
Fig. 18e - Macro Waveforms for Test Circuit Fig. 18a
Fig. 19 - Clamped Inductive Load Test Circuit
Fig. 20 - Pulsed Collector Current Test Circuit
Package Outline 5 - IMS-2 Package (13 pins) Section D - page D-14
C-156
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