INFINEON BGC420

BGC420
Self-Biased BFP420
l
l
l
l
l
SIEGET25- Technology
Small SCT598-Package
Control Pin For Switching The Device Off
Current Easy Adjustable By An External Resistor
Voltage Independent Current (2V – 4.5V)
8
7
6
5
2
1
3
4
VPW05982
ESD: Electrostatic discharge sensitive device, observe
handling precautions!
Type
Marking
BGC420
Ordering Code
(8-mm taped)
Q62702-G0092
42s
Equivalent Circuit
Pin Configuration Package
(circuit Diagram)
SCT598
see below
Pin Connections, SCT598
Vcc
Vc
Active
Bias
Circuit
Vr
RFout
Vb
Q1
Vr,5
4,Vcc
RFout,6
3, Vb
GND,7
2, GND
Vc, 8
1,RFin
Note: Top View
RFin GND
Description
The BGC420 is a silicon self biased RF Transistor (Q1). It offers an adjustable collector current
nearly independent from device voltage in the range from 2.0V to 4.5V. Additionally a control pin
(Vc) for switching the device off is provided. The collector current can be adjusted by connecting a
resistor (Rx) between Vcc and Vr.
High Frequency Products
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Edition A13, 05/99
BGC420
Maximum Ratings
Parameter
Symbol
Device current
ICC
Vcc
Ptot
Vc
Ir
Device voltage
Total power dissipation, Ts ≤
110°C
1)
Control voltage
Input Current for pin 1
Tj
TA
Tstg
Junction temperature
Ambient temperature range
Storage temperature range
Thermal Resistance
Junction-soldering point
Unit
1)
15
mA
4.5
V
68
mW
Vcc+0.5
V
380
µA
150
°C
-65...+150
°C
-65...+150
°C
≤ 270
Rth JS
K/W
1)TS is measured on the Ground lead at the soldering point to the pcb.
Electrical Specifications (Measured in Test Fixture applying the circuit specified in Figure 1
with Rx=82W), Tc=25°C, Vcc=3V, ICC£7mA unless noted
Symbol Parameter
Gp
2
Power Gain (¥S21¥ )
f=900MHz
Unit
Min
Typ
dB
17.5
14.5
19
16
1.3
1.5
1
1
15
15
7
9
4
7
3.7
2.5
<10
35
-60
f=1.8GHz
NF
Noise Figure (in 50W System)
f=900MHz
dB
f=1.8GHz
P-1dB
IP3
RLin
Output Power at 1dB Gain Compression f=900MHz
(in 50W System)
f=1.8GHz
Third Order Intercept Point
f=900MHz
(Output,GOpt)
f=1.8GHz
Input Return Loss
f=900MHz
dBm
dBm
dB
f=1.8GHz
RLout
Output Return Loss
f=900MHz
dB
f=1.8GHz
ton
toff
Ileak
IVcOn
IVcOff
Vcmin
Vcmax
2)
3)
3)
µs
µs
µA
µA
nA
V
V
On Switching Time
3)
Off Switching Time
Leakage Current In Sleep Mode
2)
Controll Pin (Vc) Current in Active Mode
2)
Controll Pin (Vc) Current in Sleep Mode
Minimum Voltage at Vc for Sleep Mode
Maximum Voltage at Vc for Active Mode
Max
1.5
1.7
Vcc - 0.3V
0V+0.3V
A positive sign denotes a current flowing form the Pin into the external circuit.
This values are valid for C2=1nF, C3=100pF and 220pF Coupling capacitors at RFin and RFout.
High Frequency Products
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Edition A13, 05/99
BGC420
Power Gain
versus Frequency
Vcc=3V, Icc=5mA
Power Gain
versus Device Current
Vcc=3V
30
50
dB
45
dB
25
40
f=1 GHz
35
20
30
Gms
Gma
Gms
2 25
¥S21¥
Gma
Gms
2 GHz
15
3 GHz
20
IS21I
2
4 GHz
10
Gma
15
5 GHz
10
5
6 GHz
5
0
0
0.1
10
1
0
2
4
6
8
10
12
GHz
14 16
mA
f
Icc
S212
versus Frequency and Temperature
Vcc=3V, Icc=7mA
28
26
dB
ϑ = -40°C
24
ϑ = +27°C
22
20
2
¥S21¥
18
16
ϑ = +85°C
14
12
10
0.2
0.6
1
1.4
1.8
2.2
2.6
3
GHz
f
High Frequency Products
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Edition A13, 05/99
BGC420
Device Current
versus Rx and Temperature
Vcc=3V
Device Current
versus Device Voltage
14
16
mA
mA
R x= 3 3 Ω
14
12
12
10
10
Icc
R x= 56 Ω
Icc
8
ϑ = -40°C
8
6
R x=82Ω
6
ϑ = +27°C
4
R x= 1 2 0 Ω
4
2
2
0
ϑ = +85°C
R x= 68 0Ω
1
2
3
0
50
4
V
Vcc
250
450
W
Rx
Device Current
versus Voltage at Vc
Vcc=3V; Rx=82W
8
7
mA
6
5
Icc
4
3
2
1
0
1
3
2
V
VVc
High Frequency Products
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Edition A13, 05/99
650
BGC420
Typical Application
Vcc,4
3V, DC
D1
C4,150pF C5,100nF
Rx
Vr,5
R2 (500R)
C3, 100pF
D2
Q2
L1,100nH
RFout,6
R1 (47k)
R4 (2k7)
Q1
R3
10k
Vc,8
Vb,3
RFin,1
GND,7,2
C2, 1nF
off
on
Figure 1. Typical Application and Internal Circuit
Remarks:
1)
2)
3)
4)
To provide low frequency stability C2 should be 10 times C3.
Be aware that also coupling capacitors determine the switching times.
The collector current at Q1 can be estimated by Ic=0.6V / Rx[W].
Place C2 as close to the device as possible.
High Frequency Products
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Edition A13, 05/99
BGC420
Layout Proposal
9F
LQ
BGC420
C7
C2
C4
C5
C6
L1
C3
Rx
9
%*&
Figure 2. Layout Proposal
Part List for Vcc=3V, ICC£7mA
Component Value
Comment
L1
100nH
RFC
C2
1nF
Compensation Capacitor for Low Frequency Stabilization
C3
100pF
RFC
C4
150pF
Blocking Capacitor
C5
100nF
Blocking Capacitor
C6
220pF
Coupling Capacitor
C7
220pF
Coupling Capacitor
Rx
82W
Current Adjust
Substrate
h=0.5mm
Fr4,er=4.5
BGC420
This proposal demonstrates how to use the BGC420 as a Self-Biased Transistor. As for a discrete Transistor
matching circuits have to be applied. A good starting point for various applications are the Application Notes
provided for the BFP420.
High Frequency Products
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Edition A13, 05/99
BGC420
SPICE Model
The following SPICE Listing describes the circuit shown in figure 3. It is valid for low frequencies. For
frequencies above 100MHz the parasitic circuit elements noted in figure 4 and table 1 should be added.
Vcc
V1
X3
Rx
2
Vr
R2
C3
X4
3
X2
L1
RFout
R1
R4
C6
Q1
Rout
R3
Vc,4
Vb
V2
C2
RFin
GND
C7
vin
Rin
Figure. 3: Circuit used in the SPICE File
* Preliminary SPICE Model for BGC420 (valid for frequencies below 100MHz)
* SIEMENS HIGH FREQUENCY PRODUCTS
*
Small Scale MMIC Design Group
.PARAM R=82
** Analysis setup **
*.TRAN 2ns 15u 0 2n
.TEMP +27
.DC LIN V1 0V 4V 0.1V
*.DC LIN V2 0V 3V 0.1V
.STEP PARAM R LIST 56 82 120 680
* Voltage
V1
Vcc
V2
Vc
*Vpul Vc
supply
0
0
0
DC 3.0V
DC 0.0V
PULSE(0 3V 100ns 0 0 9us 1000m)
High Frequency Products
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Edition A13, 05/99
BGC420
* Internal Resistors
R1
3 Vc
47k
R2
Vr 2
500
R3
Vb 0
10k
R4
Vb rfin
2.7k
TC=-0.0006,0.0000025
TC=-0.0006,0.0
TC=-0.0006,0.0000025
TC=-0.0006,0.0
* External Resistors
Rx
Vcc Vr
{R}
Rout vout 0
50
Rin
vin 0
50
TC=+0.000050,0.0
* External Capacitors
C2
C3
C7
C6
Vb 0
Vr 0
rfin vin
rfout vout
1nF
100pF
220pF
220pF
* Inductors (external)
L1
Vr rfout
100nH
* Transistors
Q1
rfout rfin 0
X2
2 3 Vb 0
X3
Vcc 5 5 0
X4
5 3 3 0
BFP420
8PL18
2PL18
2PL18
.PROBE
.MODEL BFP420 NPN(
+ IS = 2.0045e-16
+ VAF = 28.383
+ NE = 2.0518
+ VAR = 19.705
+ NC = 1.1724
+ RBM = 8.5757
+ CJE = 1.8063e-15
+ TF = 6.7661e-12
+ ITF = 0.001
+ VJC = 0.81969
+ TR = 2.3249e-09
+ MJS = 0
+ XTI = 3
* PNP:
BF = 72.534
IKF = 0.48731
BR = 7.8287
IKR = 0.69141
RB = 3.4849
RE = 0.31111
VJE = 0.8051
XTF = 0.42199
PTF = 0
MJC = 0.30232
CJS= 0
XTB = 0
FC = 0.73234)
NF = 1.2432
ISE = 1.9049e-14
NR = 1.3325
ISC = 1.9237e-17
IRB = 0.00072983
RC = 0.10105
MJE = 0.46576
VTF = 0.23794
CJC = 2.3453e-13
XCJC = 0.3
VJS = 0.75
EG = 1.11
PL18 E B C Bulk
.SUBCKT 8PL18
Q1
993
2
Q2
94
2
Q3
94
2
RCEX 993
1
.ENDS
3
.SUBCKT 2PL18
Q1
993
2
Q2
94
2
Q3
94
2
RCEX 993
1
.ENDS
3
2
3
3
993
1
2
3
3
993
1
High Frequency Products
94
94
94
94
TL18 8
VSL18 8
LSL18 8
0.204
94
94
94
94
TL18 2
VSL18 2
LSL18 2
0.816
8
Edition A13, 05/99
BGC420
*****
.MODEL
+IS
+NE
+BR
+VAF
+IKR
+RBM
+XTB
+CJE
+TF
+ITF
+MJC
+CJS
+PTF
TL18
= 2.914E-17
= 1.553E+00
= 2.869E+01
= 6.000E+01
= 2.474E-05
= 4.000E+01
=-6.000E-01
= 1.200E-14
= 7.600E-10
= 1.400E-02
= 3.760E-01
= 0.000E+00
= 0.000E+00
PNP
NF
ISE
NC
IKF
RB
RE
EG
VJE
XTF
CJC
XCJC
VJS
FC
=
=
=
=
=
=
=
=
=
=
=
=
=
1.000E+00
6.923E-16
1.500E+00
1.676E-04
6.000E+01
2.597E+00
1.156E+00
4.900E-01
2.872E-01
4.700E-13
1.000E+00
7.500E-01
5.000E-01
BF
NR
ISC
VAR
IRB
RC
XTI
MJE
VTF
VJC
TR
MJS
=
=
=
=
=
=
=
=
=
=
=
=
4.005E+02
1.000E+00
8.190E-15
2.214E+00
0.000E+00
4.000E+00
3.000E+00
1.360E-01
1.000E+03
7.610E-01
0.000E+00
0.000E+00
*****
.MODEL
+IS
+NE
+BR
+VAF
+IKR
+RBM
+XTB
+CJE
+TF
+ITF
+MJC
+CJS
+PTF
=
=
=
=
=
=
=
=
=
=
=
=
=
VSL18
1.630E-19
1.500E+00
1.000E+09
1.000E+02
1.000E+00
0.000E+00
0.000E+00
0.000E+00
2.000E-09
1.000E+06
3.770E-01
0.000E+00
0.000E+00
PNP
NF
ISE
NC
IKF
RB
RE
EG
VJE
XTF
CJC
XCJC
VJS
FC
=
=
=
=
=
=
=
=
=
=
=
=
=
1.000E+00
0.000E+00
2.000E+00
1.794E-04
0.000E+00
0.000E+00
1.122E+00
6.800E-01
0.000E+00
1.950E-13
0.000E+00
7.500E-01
5.000E-01
BF
NR
ISC
VAR
IRB
RC
XTI
MJE
VTF
VJC
TR
MJS
=
=
=
=
=
=
=
=
=
=
=
=
1.000E+09
1.000E+00
0.000E+00
1.700E+00
0.000E+00
0.000E+00
3.000E+00
3.400E-01
1.000E+03
5.500E-01
0.000E+00
0.000E+00
=
=
=
=
=
=
=
=
=
=
=
=
=
LSL18
4.261E-17
1.500E+00
1.000E+09
6.000E+01
1.000E+00
0.000E+00
0.000E+00
0.000E+00
1.000E-09
1.000E+06
3.000E-01
0.000E+00
0.000E+00
PNP
NF
ISE
NC
IKF
RB
RE
EG
VJE
XTF
CJC
XCJC
VJS
FC
=
=
=
=
=
=
=
=
=
=
=
=
=
1.000E+00
0.000E+00
2.000E+00
9.648E-05
0.000E+00
0.000E+00
1.158E+00
6.800E-01
0.000E+00
0.000E+00
0.000E+00
7.500E-01
5.000E-01
BF
NR
ISC
VAR
IRB
RC
XTI
MJE
VTF
VJC
TR
MJS
=
=
=
=
=
=
=
=
=
=
=
=
1.000E+09
1.000E+00
0.000E+00
1.700E+00
0.000E+00
0.000E+00
3.000E+00
3.400E-01
1.000E+03
4.600E-01
0.000E+00
0.000E+00
*****
.MODEL
+IS
+NE
+BR
+VAF
+IKR
+RBM
+XTB
+CJE
+TF
+ITF
+MJC
+CJS
+PTF
*****
.END
High Frequency Products
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Edition A13, 05/99
BGC420
Vcc
Rx
2
Vr
R2
V1
X3
C3
X4
3
X2
L1
RFout
R1
Lp1
Lp7
R4
Lp2
Cp1
Q1
R3
Lp6
Cp3
Vc
Vb
Lp3
Cp2
Lp5
Lp4
RFin
GND
V2
C2
Figure 4. Parasitic circuit elements for frequencies above 100MHz
Element
Value
Lp1
0.58nH
Lp2
0.56nH
Lp3
0.23nH
Lp4
0.05nH
Lp5
0.53nH
Lp6
0.47nH
Lp7
1nH
Cp1
134fF
Cp2
136fF
Cp3
6.9fF
Table 1. Parasitic circuit elements for frequencies above 100MHz
High Frequency Products
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Edition A13, 05/99
BGC420
Published by
Infineon Technologies AG i Gr.,
Bereichs Kommunikation
St.-Martin-Strasse 76,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Package
Attention please!
The information herein is given to describe certain
components and shall not be considered as
warranted characteristics.
Terms of delivery and rights to technical change
reserved.
We hereby disclaim any and all warranties, including
but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated
herein.
Infineon Technologies is an approved CECC
manufacturer.
Information
For further information on technology, delivery terms
and conditions and prices please contact your
nearest Infineon Technologies Office in Germany or
our Infineon Technologies Representatives
worldwide (see address list).
Warnings
Due to technical requirements components may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be
used in life-support devices or systems with the
express written approval of Infineon Technologies, if
a failure of such components can reasonably be
expected to cause the failure of that life-support
device or system, or to affect the safety or
effectiveness of that device or system. Life support
devices or systems are intended to be implanted in
the human body, or to support and/or maintain and
sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or
other persons may be endangered.
.
High Frequency Products
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Edition A13, 05/99