BGC420 Self-Biased BFP420 l l l l l SIEGET25- Technology Small SCT598-Package Control Pin For Switching The Device Off Current Easy Adjustable By An External Resistor Voltage Independent Current (2V – 4.5V) 8 7 6 5 2 1 3 4 VPW05982 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking BGC420 Ordering Code (8-mm taped) Q62702-G0092 42s Equivalent Circuit Pin Configuration Package (circuit Diagram) SCT598 see below Pin Connections, SCT598 Vcc Vc Active Bias Circuit Vr RFout Vb Q1 Vr,5 4,Vcc RFout,6 3, Vb GND,7 2, GND Vc, 8 1,RFin Note: Top View RFin GND Description The BGC420 is a silicon self biased RF Transistor (Q1). It offers an adjustable collector current nearly independent from device voltage in the range from 2.0V to 4.5V. Additionally a control pin (Vc) for switching the device off is provided. The collector current can be adjusted by connecting a resistor (Rx) between Vcc and Vr. High Frequency Products 1 Edition A13, 05/99 BGC420 Maximum Ratings Parameter Symbol Device current ICC Vcc Ptot Vc Ir Device voltage Total power dissipation, Ts ≤ 110°C 1) Control voltage Input Current for pin 1 Tj TA Tstg Junction temperature Ambient temperature range Storage temperature range Thermal Resistance Junction-soldering point Unit 1) 15 mA 4.5 V 68 mW Vcc+0.5 V 380 µA 150 °C -65...+150 °C -65...+150 °C ≤ 270 Rth JS K/W 1)TS is measured on the Ground lead at the soldering point to the pcb. Electrical Specifications (Measured in Test Fixture applying the circuit specified in Figure 1 with Rx=82W), Tc=25°C, Vcc=3V, ICC£7mA unless noted Symbol Parameter Gp 2 Power Gain (¥S21¥ ) f=900MHz Unit Min Typ dB 17.5 14.5 19 16 1.3 1.5 1 1 15 15 7 9 4 7 3.7 2.5 <10 35 -60 f=1.8GHz NF Noise Figure (in 50W System) f=900MHz dB f=1.8GHz P-1dB IP3 RLin Output Power at 1dB Gain Compression f=900MHz (in 50W System) f=1.8GHz Third Order Intercept Point f=900MHz (Output,GOpt) f=1.8GHz Input Return Loss f=900MHz dBm dBm dB f=1.8GHz RLout Output Return Loss f=900MHz dB f=1.8GHz ton toff Ileak IVcOn IVcOff Vcmin Vcmax 2) 3) 3) µs µs µA µA nA V V On Switching Time 3) Off Switching Time Leakage Current In Sleep Mode 2) Controll Pin (Vc) Current in Active Mode 2) Controll Pin (Vc) Current in Sleep Mode Minimum Voltage at Vc for Sleep Mode Maximum Voltage at Vc for Active Mode Max 1.5 1.7 Vcc - 0.3V 0V+0.3V A positive sign denotes a current flowing form the Pin into the external circuit. This values are valid for C2=1nF, C3=100pF and 220pF Coupling capacitors at RFin and RFout. High Frequency Products 2 Edition A13, 05/99 BGC420 Power Gain versus Frequency Vcc=3V, Icc=5mA Power Gain versus Device Current Vcc=3V 30 50 dB 45 dB 25 40 f=1 GHz 35 20 30 Gms Gma Gms 2 25 ¥S21¥ Gma Gms 2 GHz 15 3 GHz 20 IS21I 2 4 GHz 10 Gma 15 5 GHz 10 5 6 GHz 5 0 0 0.1 10 1 0 2 4 6 8 10 12 GHz 14 16 mA f Icc S212 versus Frequency and Temperature Vcc=3V, Icc=7mA 28 26 dB ϑ = -40°C 24 ϑ = +27°C 22 20 2 ¥S21¥ 18 16 ϑ = +85°C 14 12 10 0.2 0.6 1 1.4 1.8 2.2 2.6 3 GHz f High Frequency Products 3 Edition A13, 05/99 BGC420 Device Current versus Rx and Temperature Vcc=3V Device Current versus Device Voltage 14 16 mA mA R x= 3 3 Ω 14 12 12 10 10 Icc R x= 56 Ω Icc 8 ϑ = -40°C 8 6 R x=82Ω 6 ϑ = +27°C 4 R x= 1 2 0 Ω 4 2 2 0 ϑ = +85°C R x= 68 0Ω 1 2 3 0 50 4 V Vcc 250 450 W Rx Device Current versus Voltage at Vc Vcc=3V; Rx=82W 8 7 mA 6 5 Icc 4 3 2 1 0 1 3 2 V VVc High Frequency Products 4 Edition A13, 05/99 650 BGC420 Typical Application Vcc,4 3V, DC D1 C4,150pF C5,100nF Rx Vr,5 R2 (500R) C3, 100pF D2 Q2 L1,100nH RFout,6 R1 (47k) R4 (2k7) Q1 R3 10k Vc,8 Vb,3 RFin,1 GND,7,2 C2, 1nF off on Figure 1. Typical Application and Internal Circuit Remarks: 1) 2) 3) 4) To provide low frequency stability C2 should be 10 times C3. Be aware that also coupling capacitors determine the switching times. The collector current at Q1 can be estimated by Ic=0.6V / Rx[W]. Place C2 as close to the device as possible. High Frequency Products 5 Edition A13, 05/99 BGC420 Layout Proposal 9F LQ BGC420 C7 C2 C4 C5 C6 L1 C3 Rx 9 %*& Figure 2. Layout Proposal Part List for Vcc=3V, ICC£7mA Component Value Comment L1 100nH RFC C2 1nF Compensation Capacitor for Low Frequency Stabilization C3 100pF RFC C4 150pF Blocking Capacitor C5 100nF Blocking Capacitor C6 220pF Coupling Capacitor C7 220pF Coupling Capacitor Rx 82W Current Adjust Substrate h=0.5mm Fr4,er=4.5 BGC420 This proposal demonstrates how to use the BGC420 as a Self-Biased Transistor. As for a discrete Transistor matching circuits have to be applied. A good starting point for various applications are the Application Notes provided for the BFP420. High Frequency Products 6 Edition A13, 05/99 BGC420 SPICE Model The following SPICE Listing describes the circuit shown in figure 3. It is valid for low frequencies. For frequencies above 100MHz the parasitic circuit elements noted in figure 4 and table 1 should be added. Vcc V1 X3 Rx 2 Vr R2 C3 X4 3 X2 L1 RFout R1 R4 C6 Q1 Rout R3 Vc,4 Vb V2 C2 RFin GND C7 vin Rin Figure. 3: Circuit used in the SPICE File * Preliminary SPICE Model for BGC420 (valid for frequencies below 100MHz) * SIEMENS HIGH FREQUENCY PRODUCTS * Small Scale MMIC Design Group .PARAM R=82 ** Analysis setup ** *.TRAN 2ns 15u 0 2n .TEMP +27 .DC LIN V1 0V 4V 0.1V *.DC LIN V2 0V 3V 0.1V .STEP PARAM R LIST 56 82 120 680 * Voltage V1 Vcc V2 Vc *Vpul Vc supply 0 0 0 DC 3.0V DC 0.0V PULSE(0 3V 100ns 0 0 9us 1000m) High Frequency Products 7 Edition A13, 05/99 BGC420 * Internal Resistors R1 3 Vc 47k R2 Vr 2 500 R3 Vb 0 10k R4 Vb rfin 2.7k TC=-0.0006,0.0000025 TC=-0.0006,0.0 TC=-0.0006,0.0000025 TC=-0.0006,0.0 * External Resistors Rx Vcc Vr {R} Rout vout 0 50 Rin vin 0 50 TC=+0.000050,0.0 * External Capacitors C2 C3 C7 C6 Vb 0 Vr 0 rfin vin rfout vout 1nF 100pF 220pF 220pF * Inductors (external) L1 Vr rfout 100nH * Transistors Q1 rfout rfin 0 X2 2 3 Vb 0 X3 Vcc 5 5 0 X4 5 3 3 0 BFP420 8PL18 2PL18 2PL18 .PROBE .MODEL BFP420 NPN( + IS = 2.0045e-16 + VAF = 28.383 + NE = 2.0518 + VAR = 19.705 + NC = 1.1724 + RBM = 8.5757 + CJE = 1.8063e-15 + TF = 6.7661e-12 + ITF = 0.001 + VJC = 0.81969 + TR = 2.3249e-09 + MJS = 0 + XTI = 3 * PNP: BF = 72.534 IKF = 0.48731 BR = 7.8287 IKR = 0.69141 RB = 3.4849 RE = 0.31111 VJE = 0.8051 XTF = 0.42199 PTF = 0 MJC = 0.30232 CJS= 0 XTB = 0 FC = 0.73234) NF = 1.2432 ISE = 1.9049e-14 NR = 1.3325 ISC = 1.9237e-17 IRB = 0.00072983 RC = 0.10105 MJE = 0.46576 VTF = 0.23794 CJC = 2.3453e-13 XCJC = 0.3 VJS = 0.75 EG = 1.11 PL18 E B C Bulk .SUBCKT 8PL18 Q1 993 2 Q2 94 2 Q3 94 2 RCEX 993 1 .ENDS 3 .SUBCKT 2PL18 Q1 993 2 Q2 94 2 Q3 94 2 RCEX 993 1 .ENDS 3 2 3 3 993 1 2 3 3 993 1 High Frequency Products 94 94 94 94 TL18 8 VSL18 8 LSL18 8 0.204 94 94 94 94 TL18 2 VSL18 2 LSL18 2 0.816 8 Edition A13, 05/99 BGC420 ***** .MODEL +IS +NE +BR +VAF +IKR +RBM +XTB +CJE +TF +ITF +MJC +CJS +PTF TL18 = 2.914E-17 = 1.553E+00 = 2.869E+01 = 6.000E+01 = 2.474E-05 = 4.000E+01 =-6.000E-01 = 1.200E-14 = 7.600E-10 = 1.400E-02 = 3.760E-01 = 0.000E+00 = 0.000E+00 PNP NF ISE NC IKF RB RE EG VJE XTF CJC XCJC VJS FC = = = = = = = = = = = = = 1.000E+00 6.923E-16 1.500E+00 1.676E-04 6.000E+01 2.597E+00 1.156E+00 4.900E-01 2.872E-01 4.700E-13 1.000E+00 7.500E-01 5.000E-01 BF NR ISC VAR IRB RC XTI MJE VTF VJC TR MJS = = = = = = = = = = = = 4.005E+02 1.000E+00 8.190E-15 2.214E+00 0.000E+00 4.000E+00 3.000E+00 1.360E-01 1.000E+03 7.610E-01 0.000E+00 0.000E+00 ***** .MODEL +IS +NE +BR +VAF +IKR +RBM +XTB +CJE +TF +ITF +MJC +CJS +PTF = = = = = = = = = = = = = VSL18 1.630E-19 1.500E+00 1.000E+09 1.000E+02 1.000E+00 0.000E+00 0.000E+00 0.000E+00 2.000E-09 1.000E+06 3.770E-01 0.000E+00 0.000E+00 PNP NF ISE NC IKF RB RE EG VJE XTF CJC XCJC VJS FC = = = = = = = = = = = = = 1.000E+00 0.000E+00 2.000E+00 1.794E-04 0.000E+00 0.000E+00 1.122E+00 6.800E-01 0.000E+00 1.950E-13 0.000E+00 7.500E-01 5.000E-01 BF NR ISC VAR IRB RC XTI MJE VTF VJC TR MJS = = = = = = = = = = = = 1.000E+09 1.000E+00 0.000E+00 1.700E+00 0.000E+00 0.000E+00 3.000E+00 3.400E-01 1.000E+03 5.500E-01 0.000E+00 0.000E+00 = = = = = = = = = = = = = LSL18 4.261E-17 1.500E+00 1.000E+09 6.000E+01 1.000E+00 0.000E+00 0.000E+00 0.000E+00 1.000E-09 1.000E+06 3.000E-01 0.000E+00 0.000E+00 PNP NF ISE NC IKF RB RE EG VJE XTF CJC XCJC VJS FC = = = = = = = = = = = = = 1.000E+00 0.000E+00 2.000E+00 9.648E-05 0.000E+00 0.000E+00 1.158E+00 6.800E-01 0.000E+00 0.000E+00 0.000E+00 7.500E-01 5.000E-01 BF NR ISC VAR IRB RC XTI MJE VTF VJC TR MJS = = = = = = = = = = = = 1.000E+09 1.000E+00 0.000E+00 1.700E+00 0.000E+00 0.000E+00 3.000E+00 3.400E-01 1.000E+03 4.600E-01 0.000E+00 0.000E+00 ***** .MODEL +IS +NE +BR +VAF +IKR +RBM +XTB +CJE +TF +ITF +MJC +CJS +PTF ***** .END High Frequency Products 9 Edition A13, 05/99 BGC420 Vcc Rx 2 Vr R2 V1 X3 C3 X4 3 X2 L1 RFout R1 Lp1 Lp7 R4 Lp2 Cp1 Q1 R3 Lp6 Cp3 Vc Vb Lp3 Cp2 Lp5 Lp4 RFin GND V2 C2 Figure 4. Parasitic circuit elements for frequencies above 100MHz Element Value Lp1 0.58nH Lp2 0.56nH Lp3 0.23nH Lp4 0.05nH Lp5 0.53nH Lp6 0.47nH Lp7 1nH Cp1 134fF Cp2 136fF Cp3 6.9fF Table 1. Parasitic circuit elements for frequencies above 100MHz High Frequency Products 10 Edition A13, 05/99 BGC420 Published by Infineon Technologies AG i Gr., Bereichs Kommunikation St.-Martin-Strasse 76, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Package Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. . High Frequency Products 11 Edition A13, 05/99