INFINEON CGY195

GaAs MMIC
CGY 195
_________________________________________________________________________________________________________
Tentative Data
l
l
l
l
l
RF_out / VD2
Power amplifier for DECT application,
single voltage supply
Operating voltage range: 2.7 to 6 V
Pout = 26dBm at Vd=3.3V
Overall power added efficiency 44 %
4
GND
5
3
2
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
1
VD1
GND
RF-in
VPW05980
Type
Marking
Ordering code
(taped)
Package 1)
CGY 195
t.b.d.
t.b.d.
MW 5
Maximum ratings
Characteristics
Symbol
max. Value
Unit
Positive supply voltage
VD
8
V
Supply current
ID
t.b.d.
A
Maximum input power
Pinmax
t.b.d.
dBm
Channel temperature
TCh
150
°C
Storage temperature
Tstg
-55...+150
°C
Total power dissipation (Ts < 81 °C)
Ptot
t.b.d.
W
PPulse
t.b.d.
W
RthChS
t.b.d.
K/W
Ts: Temperature at soldering point
Pulse peak power
Thermal Resistance
Channel-soldering point
1) Plastic body identical to MW-6
Siemens Aktiengesellschaft
pg. 1/3
27.01.97
HL EH PD 21
GaAs MMIC
CGY 195
_________________________________________________________________________________________________________
Electrical characteristics
(TA = 25°C , f=1.89 GHz, ZS=ZL=50 Ohm, , unless otherwise specified)
Characteristics
Symbol
min
typ
max
Unit
IDD
-
270
-
mA
G
-
26
-
dB
Po
-
26
-
dBm
Po
-
28
-
dBm
42
-
%
Supply current
VD=3.3V; Pin = +3 dBm
Gain
VD=3.3V; Pin = -10 dBm
Output Power
VD=3.3V; Pin = 3 dBm
Output Power
VD=4.8V; Pin = 5 dBm
PAE
Overall Power added Efficiency
VD=3.3V; Pin = 3 dBm
Output power and power added efficiency
pulsed mode: T=577µs, duty cycle 12.5%
CGY 195
30
50
45
40
35
30
25
20
15
10
5
0
25
20
15
Pout [dBm]
PAE [%]
10
5
-5
-4
-3
-2
-1
0
1
2
3
4
5
6
7
8
Pin/dB m
Siemens Aktiengesellschaft
pg. 2/3
27.01.97
HL EH PD 21
GaAs MMIC
CGY 195
_________________________________________________________________________________________________________
Functional Block Diagram
(3)
VD1
(4)
(1)
RFout / VD2
RFin
(2,5,6)
GND
Pin #
(2,5,6)
GND
Configuration
1
RFin
RF input power
2
GND
RF and DC ground
3
VD1
Pos. drain voltage of the 1st stage
4
RFout/VD2 RF output power / Pos. drain voltage of the 2nd stage
5
GND
RF and DC ground
6
GND
RF and DC ground
Siemens Aktiengesellschaft
pg. 3/3
27.01.97
HL EH PD 21