GaAs MMIC CGY 195 _________________________________________________________________________________________________________ Tentative Data l l l l l RF_out / VD2 Power amplifier for DECT application, single voltage supply Operating voltage range: 2.7 to 6 V Pout = 26dBm at Vd=3.3V Overall power added efficiency 44 % 4 GND 5 3 2 ESD: Electrostatic discharge sensitive device, observe handling precautions! 1 VD1 GND RF-in VPW05980 Type Marking Ordering code (taped) Package 1) CGY 195 t.b.d. t.b.d. MW 5 Maximum ratings Characteristics Symbol max. Value Unit Positive supply voltage VD 8 V Supply current ID t.b.d. A Maximum input power Pinmax t.b.d. dBm Channel temperature TCh 150 °C Storage temperature Tstg -55...+150 °C Total power dissipation (Ts < 81 °C) Ptot t.b.d. W PPulse t.b.d. W RthChS t.b.d. K/W Ts: Temperature at soldering point Pulse peak power Thermal Resistance Channel-soldering point 1) Plastic body identical to MW-6 Siemens Aktiengesellschaft pg. 1/3 27.01.97 HL EH PD 21 GaAs MMIC CGY 195 _________________________________________________________________________________________________________ Electrical characteristics (TA = 25°C , f=1.89 GHz, ZS=ZL=50 Ohm, , unless otherwise specified) Characteristics Symbol min typ max Unit IDD - 270 - mA G - 26 - dB Po - 26 - dBm Po - 28 - dBm 42 - % Supply current VD=3.3V; Pin = +3 dBm Gain VD=3.3V; Pin = -10 dBm Output Power VD=3.3V; Pin = 3 dBm Output Power VD=4.8V; Pin = 5 dBm PAE Overall Power added Efficiency VD=3.3V; Pin = 3 dBm Output power and power added efficiency pulsed mode: T=577µs, duty cycle 12.5% CGY 195 30 50 45 40 35 30 25 20 15 10 5 0 25 20 15 Pout [dBm] PAE [%] 10 5 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7 8 Pin/dB m Siemens Aktiengesellschaft pg. 2/3 27.01.97 HL EH PD 21 GaAs MMIC CGY 195 _________________________________________________________________________________________________________ Functional Block Diagram (3) VD1 (4) (1) RFout / VD2 RFin (2,5,6) GND Pin # (2,5,6) GND Configuration 1 RFin RF input power 2 GND RF and DC ground 3 VD1 Pos. drain voltage of the 1st stage 4 RFout/VD2 RF output power / Pos. drain voltage of the 2nd stage 5 GND RF and DC ground 6 GND RF and DC ground Siemens Aktiengesellschaft pg. 3/3 27.01.97 HL EH PD 21