BBY 51-03W Silicon Tuning Diode l High Q hyperabrupt tuning diode l Designed for low tuning voltage operation l For VCO's in mobile communications equipment Type Marking Ordering Code (tape and reel) Pin Configuration Package 1 2 BBY 51-03W H Q62702-B663 C1 A2 1) SOD-323 Maximum Ratings Parameter Symbol Reverse voltage VR IF Top Tstg Forward current Operating temperature range Storage temperature range BBY 51-03W Unit 7 V 20 mA -55 +150°C °C -55...+150°C °C ______________________________ 1) Package mounted on alumina 15mm x 16.7mm x 0.7mm Semiconductor Group 1 Edition A01, 03.05.95 BBY 51-03W Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Value min. typ. Unit max. DC Characteristics IR Reverse current VR = 6 V VR = 6 V, TA = 65 °C Diode capacitance VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz Capacitance ratio VR = 1 V, 4 V, f = 1 MHz nA - - 10 200 4.5 3.4 2.7 2.5 5.3 4.2 3.5 3.1 6.1 5.2 4.6 3.7 CT pF CT1V/CT4V 1.55 1.75 2.2 pF Capacitance difference VR = 1 V, 3 V,f = 1MHz VR = 3 V, 4 V,f = 1MHz Series resistance VR = 1 V, f = 1 GHz Case capacitance f = 1 MHz Serien inductance C1V-C3V C3V-C4V rs 1.4 0.30 1.78 0.50 2.2 0.7 - 0.37 - Ω CC Ls pF - 0.12 2 - nH ____________________ 1) Without 100 % test, correlation limits Semiconductor Group 2 Edition A01, 03.05.95 BBY 51-03W Dioden capacitance CT = f (VR*) f = 1 MHz Temperature coefficient of the diode capacitance TCC = f (VR), f = 1 MHz ppm/C° T CC Semiconductor Group 3 Edition A01, 03.05.95