VISHAY SUU50N03-12P

SUU50N03-12P
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
rDS(on) (Ω)
ID (A)a
0.012 @ VGS = 10 V
17.5
0.0175 @ VGS = 4.5 V
14.5
VDS (V)
30
D TrenchFETr Power MOSFET
APPLICATIONS
D DC/DC Converters
D Synchronous Rectifiers
TO-251
D
G
and DRAIN-TAB
G D S
Top View
S
Order Number:
SUU50N03-12P
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
20
TA = 25_C
Continuous Drain Currenta
TA = 100_C
Pulsed Drain Current
Continuous Source Current (Diode
Avalanche Current
L = 0.1
0 1 mH
Single Pulse Avalanche Energy
12.4
40
IS
5
IAS
30
EAS
TA = 25_C
Operating Junction and Storage Temperature Range
A
45
TC = 25_C
Maximum Power Dissipation
V
17.5
ID
IDM
Conduction)a
Unit
mJ
46.8
PD
W
6.5a
TJ, Tstg
_C
--55 to 175
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction
Junction-to-Ambient
to Ambienta
Maximum Junction-to-Case
Symbol
t ≤ 10 sec
Steady State
RthJA
RthJC
Typical
Maximum
18
23
40
50
2.6
3.2
Unit
_C/W
C/
Notes
a. Surface Mounted on FR4 Board, t ≤ 10 sec.
Document Number: 72429
S-31872—Rev. A, 15-Sep-03
www.vishay.com
1
SUU50N03-12P
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Typa
Symbol
Test Condition
Min
Max
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
VGS(th)
VDS = VGS, ID = 250 mA
1.0
IGSS
VDS = 0 V, VGS = 20 V
100
VDS = 24 V, VGS = 0 V
1
VDS = 24 V, VGS = 0 V, TJ = 125_C
50
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currentb
ID(on)
VDS = 5 V, VGS = 10 V
A
0.012
0.0138
0.0175
gfs
Ω
0.017
VGS = 4.5 V, ID = 15 A
Forward Transconductanceb
mA
0.010
VGS = 10 V, ID = 20 A, TJ = 125_C
rDS(on)
nA
40
VGS = 10 V, ID = 20 A
Drain-Source
Drain
Source On
On-State
State Resistanceb
V
3.0
VDS = 15 V, ID = 20 A
15
S
Dynamica
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
140
Gate Resistance
Rg
1.5
Total Gate Chargec
Qg
28
Gate-Source Chargec
Qgs
Gate-Drain Chargec
Qgd
Turn-On Delay Timec
td(on)
Rise Timec
1600
VGS = 0 V, VDS = 25 V, f = 1 MHz
Ω
42
nC
C
5.0
VDD = 15 V, RL = 0.3 Ω
ID ≅ 50 A, VGEN = 10 V, Rg = 2.5 Ω
td(off)
Fall Timec
pF
p
6.0
VDS = 15
5 V,, VGS = 10
0 V,, ID = 50 A
tr
Turn-Off Delay Timec
285
tf
9
15
15
25
20
30
12
20
ns
Source-Drain Diode Ratings and Characteristic (TC = 25_C)
Pulsed Current
ISM
Diode Forward Voltageb
VSD
IF = 40 A, VGS = 0 V
1.2
1.5
V
trr
IF = 50 A, di/dt = 100 A/ms
25
70
ns
Source-Drain Reverse Recovery Time
100
A
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 ms, duty cycle ≤ 2%.
c. Independent of operating temperature.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
80
80
VGS = 10 thru 5 V
60
40
I D -- Drain Current (A)
I D -- Drain Current (A)
60
4V
20
40
TC = 125_C
20
25_C
3V
--55_C
0
0
0
1
2
3
4
VDS -- Drain-to-Source Voltage (V)
www.vishay.com
2
5
0
1
2
3
4
5
6
VGS -- Gate-to-Source Voltage (V)
Document Number: 72429
S-31872—Rev. A, 15-Sep-03
SUU50N03-12P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Transconductance
On-Resistance vs. Drain Current
80
0.05
60
r DS(on)-- On-Resistance ( Ω )
g fs -- Transconductance (S)
TC = --55_C
25_C
125_C
40
20
0.04
0.03
VGS = 4.5 V
0.02
VGS = 10 V
0.01
0
0.00
0
10
20
30
40
50
0
20
ID -- Drain Current (A)
40
Capacitance
Gate Charge
V GS -- Gate-to-Source Voltage (V)
10
2000
C -- Capacitance (pF)
80
ID -- Drain Current (A)
2500
Ciss
1500
1000
500
Coss
Crss
VDS = 15 V
ID = 50 A
8
6
4
2
0
0
0
5
10
15
20
25
30
0
6
VDS -- Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
18
24
30
Source-Drain Diode Forward Voltage
100
VGS = 10 V
ID = 15 A
I S -- Source Current (A)
1.6
12
Qg -- Total Gate Charge (nC)
1.8
r DS(on)-- On-Resistance ( Ω )
(Normalized)
60
1.4
1.2
1.0
TJ = 150_C
TJ = 25_C
10
0.8
0.6
--50
1
--25
0
25
50
75
100
125
TJ -- Junction Temperature (_C)
Document Number: 72429
S-31872—Rev. A, 15-Sep-03
150
175
0
0.3
0.6
0.9
1.2
1.5
VSD -- Source-to-Drain Voltage (V)
www.vishay.com
3
SUU50N03-12P
Vishay Siliconix
THERMAL RATINGS
Maximum Drain Current vs.
Ambiemt Temperature
Safe Operating Area
1000
20
Limited
by rDS(on)
100
I D -- Drain Current (A)
I D -- Drain Current (A)
16
12
8
4
10, 100 ms
10
1 ms
10 ms
100 ms
1
1s
0
10 s
TA = 25_C
Single Pulse
0.1
dc, 100 s
0.01
0
25
50
75
100
125
150
175
0.1
1
10
100
VDS -- Drain-to-Source Voltage (V)
TA -- Ambient Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10 --4
10 --3
10 --2
10 --1
1
10
100
1000
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10 --4
10 --3
10 --2
10 --1
1
10
100
Square Wave Pulse Duration (sec)
www.vishay.com
4
Document Number: 72429
S-31872—Rev. A, 15-Sep-03