SUD15P01-52 New Product Vishay Siliconix P-Channel 8-V (D-S), 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.052 @ VGS = –4.5 V –15 D TrenchFETr Power MOSFET D 175_C Junction Temperature D Low Gate Threshold 0.070 @ VGS = –2.5 V –13 APPLICATIONS 0.105 @ VGS = –1.8 V –10.5 VDS (V) –8 D Pass Transistor for LDOs S TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD15P01-52 D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS –8 Gate-Source Voltage VGS "8 TC = 25_C Continuous Drain Current (TJ = 175_C) TC = 125_C Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya L = 0.1 mH TC = 25_C Power Dissipation TA = 25_C Operating Junction and Storage Temperature Range Unit V –15 ID –8.7 IDM –25 IAR –10 EAR A 5 mJ 21.4b, c PD W 1.5c TJ, Tstg _C –55 to 175 THERMAL RESISTANCE RATINGS Parameter Symbol t v 10 sec Junction-to-Ambientb Junction-to-Case Steady State RthJA RthJC Typical Maximum 40 50 80 100 5.6 7 Unit _C/W C/W Notes: a. Duty cycle v 1%. b. When mounted on 1” square PCB (FR-4 material). c. See SOA curve for voltage derating. Document Number: 71806 S-20966—Rev. B, 01-Jul-02 www.vishay.com 1 SUD15P01-52 New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max V(BR)DSS VGS = 0 V, ID = –250 mA –8 VGS(th) VDS = VGS, ID = –250 mA –0.45 IGSS VDS = 0 V, VGS = "8 V VDS = –6.4 V, VGS = 0 V –1 IDSS VDS = –6.4 V, VGS = 0 V, TJ = 125_C –50 VDS = –6.4 V, VGS = 0 V, TJ = 175_C –150 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta ID(on) Drain-Source On-State Forward Resistancea Transconductancea rDS(on) gfs "100 VDS = –5 V, VGS = –4.5 V –25 VDS = –5 V, VGS = –2.5 V –10 VGS = –4.5 V, ID = –10 A –0.8 nA mA m A 0.043 0.052 VGS = –4.5 V, ID = –13 A, TJ = 125_C 0.065 VGS = –4.5 V, ID = –13 A, TJ = 175_C 0.075 VGS = –2.5 V, ID = –5 A 0.070 VGS = –1.8 V, ID = –2 A 0.105 VDS = –5 V, ID = –10 A V 16 W S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reversen Transfer Capacitance Crss 1300 VGS = 0 V, VDS = –4 V, f = 1 MHz 430 pF 245 Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd 2 Turn-On Delay Timec td(on) 10 20 tr VDD = –4 V, RL = 0.22 W 16 25 td(off) ID ] –15 A, VGEN = –4.5 V, RG = 2.5 W 30 45 25 40 Rise Timec Turn-Off Delay Timec Fall Timec 10.5 VDS = –4 V, VGS = –4.5 V, ID = –10 A tf 15 1.6 nC ns Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current Is –15 Pulsed Current ISM –25 Forward Voltagea VSD IF = –15 A, VGS = 0 V trr IF = –15 A, di/dt = 100 A/ms Reverse Recovery Time A 45 –1.5 V 75 ns Notes: a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 71806 S-20966—Rev. B, 01-Jul-02 SUD15P01-52 New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 60 20 4.5 V 48 3.5 V 36 3V 2.5 V 24 25_C 16 I D – Drain Current (A) I D – Drain Current (A) TC = –55_C 4V 2V 12 125_C 12 8 4 1.5 V 1V 0 0 1 2 3 4 0 0.0 5 VDS – Drain-to-Source Voltage (V) 1.0 Transconductance 2.0 2.5 3.0 On-Resistance vs. Drain Current 0.20 TC = –55_C 0.16 r DS(on)– On-Resistance ( W ) 20 25_C 125_C 15 10 5 0 0.12 VGS = 1.8 V 0.08 VGS = 2.5 V VGS = 4.5 V 0.04 0.00 0 5 10 15 20 25 0 5 10 VGS – Gate-to-Source Voltage (V) 15 20 25 16 20 ID – Drain Current (A) Capacitance Gate Charge 2000 V GS – Gate-to-Source Voltage (V) 8 1600 C – Capacitance (pF) 1.5 VGS – Gate-to-Source Voltage (V) 25 g fs – Transconductance (S) 0.5 Ciss 1200 800 Coss 400 Crss 0 VDS = 4 V ID = 10 A 6 4 2 0 0 2 4 6 VDS – Drain-to-Source Voltage (V) Document Number: 71806 S-20966—Rev. B, 01-Jul-02 8 0 4 8 12 Qg – Total Gate Charge (nC) www.vishay.com 3 SUD15P01-52 New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 1.6 30 1.4 TJ = 150_C I S – Source Current (A) r DS(on)– On-Resistance ( W ) (Normalized) VGS = 4.5 V ID = 10 A 1.2 1.0 10 TJ = 25_C 0.8 1 0.6 –50 –25 0 25 50 75 100 125 150 0.0 175 0.3 TJ – Junction Temperature (_C) 0.6 0.9 1.2 1.5 VSD – Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature Safe Operating Area 18 100.0 100 ms I D – Drain Current (A) I D – Drain Current (A) 15 12 9 6 10.0 Limited by rDS(on) 1 ms 10 ms 100 ms dc, 1 s 1.0 TC = 25_C Single Pulse 3 0 0 25 50 75 100 125 150 0.1 0.1 175 TC – Case Temperature (_C) 1.0 VDS – Drain-to-Source Voltage (V) 10.0 Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 100 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 71806 S-20966—Rev. B, 01-Jul-02