SUM47N10-24L Vishay Siliconix New Product N-Channel 100-V (D-S) 175_C MOSFET FEATURES D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) ID (A) 0.024 @ VGS = 10 V 47 APPLICATIONS 0.027 @ VGS = 4.5 V 44 D Automotive Such As: − HID Lamp − Ignition Systems − Injection Systems D TO-263 G G D S Top View S Ordering Information: SUM47N10-24L—E3 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 100 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 175_C)b TC = 25_C TC = 125_C Pulsed Drain Current ID 27 70 Continuous Source Current (Diode Conduction) IS 47 Single Pulse Avalanche Current IAs 40 L = 0.1 mH TC = 25_C Maximum Power Dissipation TA = 25_C Operating Junction and Storage Temperature Range EAs V 47 IDM Single Pulse Avalanche Energy (Duty Cycle v 1%) Unit 80 A mJ 136b PD 3.75a W TJ, Tstg −55 to 175 _C Symbol Maximum Unit THERMAL RESISTANCE RATINGS Parameter PCB Mount J Junction-to-Ambient ti t A bi t Junction-to-Case Free Air 40 RthJA RthJC 62.5 _C/W C/W 1.1 Notes a. Surface Mounted on 1” x1” FR4 Board. b. See SOA curve for voltage derating. Document Number: 72827 S-40434—Rev. A, 15-Mar-04 www.vishay.com 1 SUM47N10-24L Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Typa Symbol Test Condition Min Max V(BR)DSS VGS = 0 V, ID = 250 mA 100 VGS(th) VDS = VGS, ID = 250 mA 1.0 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 100 V, VGS = 0 V 1 VDS = 100 V, VGS = 0 V, TJ = 125_C 50 VDS = 100 V, VGS = 0 V, TJ = 175_C 250 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage g Drain Current On-State Drain Currentb IDSS ID(on) VDS = 5 V, VGS = 10 V 70 VGS = 10 V, ID = 40 A Drain Source On-State Drain-Source On State Resistanceb Forward Transconductanceb rDS(on) DS( ) gfs 3.0 V nA mA m A 0.019 0.024 VGS = 10 V, ID = 40 A, TJ = 125_C 0.048 VGS = 10 V, ID = 40 A, TJ = 175_C 0.060 VGS = 4.5 V, ID = 20 A 0.021 VDS = 15 V, ID = 40 A 70 W 0.027 S Dynamica Input Capacitance Ciss 2400 VGS = 0 V, VDS = 25 V, F = 1 MHz Output Capacitance Coss Reverse Transfer Capacitance Crss 120 Total Gate Chargec Qg 40 Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Gate Resistance Rg Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec 290 pF 60 11 VDS = 50 V,, VGS = 10 V,, ID = 40 A nC 9 2.2 3.5 td(on) 8 13 tr 40 60 15 25 80 120 td(off) f = 1 MHz VDD = 50 V, RL = 1.25 W ID ^ 47 A, VGEN = 10 V, Rg = 2.5 W tf 1 W ns Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current ISM 70 A Diode Forward Voltageb VSD IF = 40 A, VGS = 0 V 1.0 1.5 V trr IF = 47 A, di/dt = 100 A/ms 75 120 ns Source-Drain Reverse Recovery Time Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. www.vishay.com 2 Document Number: 72827 S-40434—Rev. A, 15-Mar-04 SUM47N10-24L Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 100 160 VGS = 10 thru 6 V 5V 80 I D − Drain Current (A) I D − Drain Current (A) 120 80 4V 40 60 TC = 125_C 40 −55_C 25_C 20 3V 0 0 0 2 4 6 8 10 0 VDS − Drain-to-Source Voltage (V) 1 2 3 4 5 VGS − Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 100 0.05 TC = −55_C 25_C 60 r DS(on)− On-Resistance ( W ) g fs − Transconductance (S) 80 125_C 40 20 0 0.04 0.03 VGS = 4.5 V 0.02 VGS = 10 V 0.01 0.00 0 10 20 30 40 50 60 0 20 40 ID − Drain Current (A) V GS − Gate-to-Source Voltage (V) C − Capacitance (pF) 100 Gate Charge 20 3000 Ciss 2000 1000 Crss 80 ID − Drain Current (A) Capacitance 4000 60 Coss 0 VDS = 50 V ID = 40 A 16 12 8 4 0 0 20 40 60 80 VDS − Drain-to-Source Voltage (V) Document Number: 72827 S-40434—Rev. A, 15-Mar-04 100 0 20 40 60 80 Qg − Total Gate Charge (nC) www.vishay.com 3 SUM47N10-24L Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 3.0 100 VGS = 10 V ID = 40 A I S − Source Current (A) rDS(on) − On-Resiistance (Normalized) 2.5 2.0 1.5 1.0 TJ = 175_C 10 TJ = 25_C 0.5 0.0 −50 −25 0 25 50 75 100 125 150 1 175 0 0.3 TJ − Junction Temperature (_C) 0.6 0.9 1.2 VSD − Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Avalanche Drain Current vs. Case Temperature 50 Safe Operating Area 100 10 ms Limited by rDS(on) I D − Drain Current (A) I D − Drain Current (A) 40 30 20 10 1 ms 10 ms 1 100 ms, dc TC = 25_C Single Pulse 10 0 0 25 50 75 100 125 150 0.1 175 0.1 1 10 100 1000 VDS − Drain-to-Source Voltage (V) TC − Case Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance 100 ms Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 10 30 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 72827 S-40434—Rev. A, 15-Mar-04