SUM60N06-15 Vishay Siliconix N-Channel 60-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 60 0.015 @ VGS = 10 V 60 a D TrenchFETr Power MOSFET D 175_C Junction Temperature APPLICATIONS D Automotive Applications Such As: − ABS − EPS − Motor Drives D Industrial D TO-263 G G D S Top View S Ordering Information: SUM60N06-15 SUM60N06-15-E3 (Lead Free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 175_C) TC = 25_C TC = 125_C Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya L = 0.1 mH TC = 25_C Maximum Power Dissipationa TA = 25_C c Operating Junction and Storage Temperature Range ID 35 100 IAR 35 PD V 60 IDM EAR Unit 61 100b 3.75 A mJ W TJ, Tstg −55 to 175 _C Symbol Limit Unit THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient—PCB Mountc RthJA 40 Junction-to-Case RthJC 1.4 _C/W Notes a. Duty cycle v 1%. b. See SOA curve for voltage derating. c. When mounted on 1” square PCB (FR-4 material). Document Number: 72080 S-32406—Rev. B, 24-Nov-03 www.vishay.com 1 SUM60N06-15 Vishay Siliconix SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max V(BR)DSS VDS = 0 V, ID = 250 mA 60 VGS(th) VDS = VGS, ID = 250 mA 2 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 60 V, VGS = 0 V 1 Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage g Drain Current On-State Drain Currenta IDSS VDS = 60 V, VGS = 0 V, TJ = 125_C 50 VDS = 60 V, VGS = 0 V, TJ = 175_C 250 ID(on) VDS w 5 V, VGS = 10 V rDS(on) VGS = 10 V, ID = 30 A, TJ = 125_C 100 VGS = 10 V, ID = 30 A Drain-Source On-State Resistancea 4 gfs VDS = 15 V, ID = 30 A nA mA m A 0.012 0.015 0.025 VGS = 10 V, ID = 30 A, TJ = 175_C Forward Transconductancea V W 0.030 20 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec 2100 VGS = 0 V, VDS = 25 V, f = 1 MHz 300 pF 125 30 VDS = 30 V,, VGS = 10 V,, ID = 60 A 45 11 nC Qgd 8 td(on) 10 15 tr 12 20 20 30 10 15 td(off) VDD = 30 V, RL = 0.5 W ID ^ 60 A, VGEN = 10 V, RG = 2.5 W tf ns Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current IS 110 Pulsed Current ISM 300 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge trr IRM(REC) Qrr IF = 30 A, VGS = 0 V IF = 60 A, A di/dt = 100 A/ A/ms A 1.1 1.5 V 50 85 ns 2 4 A 0.05 0.17 mC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 72080 S-32406—Rev. B, 24-Nov-03 SUM60N06-15 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 100 100 6V 75 I D − Drain Current (A) I D − Drain Current (A) VGS = 10 thru 7 V 50 5V 25 75 50 TC = 125_C 25 25_C 4V 0 0 2 4 6 8 10 0 VDS − Drain-to-Source Voltage (V) Transconductance 2 3 4 5 6 7 On-Resistance vs. Drain Current 0.024 TC = −55_C 25_C 80 r DS(on) − On-Resistance ( W ) 100 g fs − Transconductance (S) 1 VGS − Gate-to-Source Voltage (V) 120 125_C 60 40 20 0 0.020 0.016 VGS = 10 V 0.012 0.008 0.004 0.000 0 10 20 30 40 50 60 0 20 40 ID − Drain Current (A) 80 100 Gate Charge 20 V GS − Gate-to-Source Voltage (V) 2500 Ciss 2000 1500 1000 Coss Crss 500 60 ID − Drain Current (A) Capacitance 3000 C − Capacitance (pF) −55_C 0 0 VGS = 30 V ID = 60 A 16 12 8 4 0 0 10 20 30 40 50 VDS − Drain-to-Source Voltage (V) Document Number: 72080 S-32406—Rev. B, 24-Nov-03 60 0 10 20 30 40 50 60 Qg − Total Gate Charge (nC) www.vishay.com 3 SUM60N06-15 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 100 Source-Drain Diode Forward Voltage VGS = 10 V ID = 30 A 2.0 I S − Source Current (A) r DS(on) − On-Resistance (W) (Normalized) 2.5 1.5 1.0 0.5 0.0 −50 −25 0 25 50 75 100 125 150 TJ = 150_C 1 0.2 175 TJ = 25_C 10 0.4 TJ − Junction Temperature (_C) 0.6 0.8 1.0 1.2 VSD − Source-to-Drain Voltage (V) Avalanche Current vs. Time 80 1000 On-Resistance vs. Junction Temperature r DS(on) − On-Resistance (W) (Normalized) ID = 1 m A I Dav (a) 100 10 IAV (A) @ TJ = 25_C 1 75 70 65 IAV (A) @ TJ = 150_C 0.1 0.00001 0.0001 0.001 0.01 tin (Sec) www.vishay.com 4 0.1 1 60 −50 −25 0 25 50 75 100 125 150 175 TJ − Junction Temperature (_C) Document Number: 72080 S-32406—Rev. B, 24-Nov-03 SUM60N06-15 Vishay Siliconix THERMAL RATINGS Maximum Drain Current vs. Case Temperature Safe Operating Area 1000 70 Limited by rDS(on) 100 50 I D − Drain Current (A) I D − Drain Current (A) 60 40 30 20 100 ms 10 1 ms 10 ms 1 10 0 25 50 75 100 125 150 175 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) TC − Ambient Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance dc, 100 ms TC = 25_C Single Pulse 0.1 0 1 10 ms Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) Document Number: 72080 S-32406—Rev. B, 24-Nov-03 www.vishay.com 5