Si7434DP Vishay Siliconix New Product N-Channel 250-V (D-S) MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.155 @ VGS = 10 V 3.8 D PWM-OptimizedTrenchFETr Power MOSFET D 100% Rg Tested D Avalanche Tested 0.162 @ VGS = 6 V 3.7 APPLICATIONS VDS (V) 250 D Primary Side Switch In: − Telecom Power Supplies − Distributed Power Architectures − Miniature Power Modules PowerPAK SO-8 D S 6.15 mm 1 2 5.15 mm S 3 S 4 G D 8 7 G D 6 D 5 N-Channel MOSFET D Bottom View Ordering Information: Si7434DP-T1—E3 Creepage Clearance: 30 mils S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 250 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current ID Continuous Source Current (Diode Conduction)a Avalanche Current IS L = 0.1 mH Single Pulse Avalanche Energy TA = 25_C Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range 2.3 3.0 1.8 40 A 4.3 1.6 IAS 13 EAS 8.4 PD V 3.8 IDM mJ 5.2 1.9 3.3 1.2 TJ, Tstg Unit −55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Case (Drain) Symbol t v 10 sec Steady State Steady State RthJA RthJC Typical Maximum 19 24 52 65 1.5 1.8 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72579 S-32408—Rev. A, 24-Nov-03 www.vishay.com 1 Si7434DP Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = 250 mA 2.0 IGSS Typ Max Unit 4.0 V VDS = 0 V, VGS = "20 V "100 nA VDS = 250 V, VGS = 0 V 1 VDS = 250 V, VGS = 0 V, TJ = 55_C 15 Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain Source On Drain-Source On-State State Resistancea Diode Forward Voltagea 30 VDS w 5 V, VGS = 10 V A VGS = 10 V, ID = 3.8 A 0.129 0.155 VGS = 6.0 V, ID = 3.7 A 0.131 0.162 gfs VDS = 15 V, ID = 3.8 A 14 VSD IS = 2.8 A, VGS = 0 V 0.75 1.2 34 50 VDS = 100 V, VGS = 10 V, ID = 3.8 A 6.8 rDS(on) DS( ) Forward Transconductancea mA W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time 10.5 0.6 1.2 1.8 16 25 VDD = 100 V, RL = 25 W ID ^ 4.0 A, VGEN = 10 V, RG = 6 W 23 35 47 70 19 30 IF = 2.8 A, di/dt = 100 A/ms 100 150 td(on) Rise Time tr Turn-Off Delay Time td(off) Fall Time tf Source-Drain Reverse Recovery Time trr nC W ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 30 40 VGS = 10 thru 6 V 35 30 I D − Drain Current (A) I D − Drain Current (A) 24 5V 18 12 6 25 20 15 TC = 125_C 10 25_C 5 −55_C 0 0 0 2 4 6 8 VDS − Drain-to-Source Voltage (V) www.vishay.com 2 10 0 1 2 3 4 5 6 VGS − Gate-to-Source Voltage (V) Document Number: 72579 S-32408—Rev. A, 24-Nov-03 Si7434DP Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Capacitance 2500 0.24 2000 C − Capacitance (pF) r DS(on) − On-Resistance ( W ) On-Resistance vs. Drain Current 0.30 0.18 VGS = 6 V VGS = 10 V 0.12 0.06 Ciss 1500 1000 Coss 500 Crss 0.00 0 0 8 16 24 32 40 0 50 ID − Drain Current (A) Gate Charge 200 250 On-Resistance vs. Junction Temperature 2.5 VDS = 100 V ID = 3.8 A r DS(on) − On-Resistance ( W) (Normalized) V GS − Gate-to-Source Voltage (V) 150 VDS − Drain-to-Source Voltage (V) 10 8 6 4 2 0 0 7 14 21 28 VGS = 10 V ID = 3.8 A 2.0 1.5 1.0 0.5 −50 35 −25 0 Qg − Total Gate Charge (nC) Source-Drain Diode Forward Voltage 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.25 r DS(on) − On-Resistance ( W ) TJ = 150_C 10 TJ = 25_C 1 0.0 25 TJ − Junction Temperature (_C) 50 I S − Source Current (A) 100 0.20 ID = 3.8 A 0.15 0.10 0.05 0.00 0.2 0.4 0.6 0.8 1.0 VSD − Source-to-Drain Voltage (V) Document Number: 72579 S-32408—Rev. A, 24-Nov-03 1.2 0 2 4 6 8 10 VGS − Gate-to-Source Voltage (V) www.vishay.com 3 Si7434DP Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power, Juncion-to-Ambient 1.0 100 80 ID = 250 mA Power (W) V GS(th) Variance (V) 0.5 0.0 −0.5 60 40 −1.0 20 −1.5 −50 −25 0 25 50 75 100 125 0 150 10 1 Time (sec) Safe Operating Area, Junction-to-Case 100 Limited by rDS(on) 10 I D − Drain Current (A) 0.1 0.01 0.001 TJ − Temperature (_C) 1 ms 1 10 ms 100 ms 0.1 1s 10 s TC = 25_C Single Pulse 0.01 dc 0.001 0.1 10 1 100 1000 VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 68_C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 www.vishay.com 4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 72579 S-32408—Rev. A, 24-Nov-03 Si7434DP Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 Document Number: 72579 S-32408—Rev. A, 24-Nov-03 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 5