VISHAY IL4108-X006

IL410/ IL4108
Vishay Semiconductors
Optocoupler, Phototriac Output, Zero Crossing, High dV/dt, Low
Input Current
Features
•
•
•
•
•
•
•
•
High Input Sensitivity
IFT = 2.0 mA, PF = 1.0
IFT = 5.0 mA, PF ≤ 1.0
300 mA On-State Current
Zero Voltage Crossing Detector
600/800 V Blocking Voltage
High Static dV/dt 10 kV/µs
Inverse Parallel SCRs Provide Commutating
dV/dt >10 kV/µs
• Very Low Leakage < 10 µA
•
•
•
•
Isolation Test Voltage 5300 VRMS
Small 6-Pin DIP Package
Lead-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Agency Approvals
• UL1577, File No. E52744 System Code H or J,
Double Protection
• CSA 93751
• BSI IEC60950 IEC60065
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
• FIMKO
Applications
Solid-state relays
Industrial controls
Office equipment
Consumer appliances.
Description
The IL410/ IL4108 consists of a GaAs IRLED optically
coupled to a photosensitive zero crossing TRIAC network. The TRIAC consists of two inverse parallel connected monolithic SCRs. These three semiconductors are assembled in a six pin dual in-line
package.
Document Number 83627
Rev. 1.4, 26-Apr-04
A 1
6 MT2
C 2
5 NC
NC 3
ZCC*
4 MT1
*Zero Crossing Circuit
i179030
High input sensitivity is achieved by using an emitter
follower phototransistor and a cascaded SCR predriver resulting in an LED trigger current of less than
2.0 mA (DC).
The IL410/ IL4108 uses two discrete SCRs resulting
in a commutating dV/dt greater than 10 kV/µs. The
use of a proprietary dV/dt clamp results in a static dV/
dt of greater than 10 kV/µs. This clamp circuit has a
MOSFET that is enhanced when high dV/dt spikes
occur between MT1 and MT2 of the TRIAC. When
conducting, the FET clamps the base of the phototransistor, disabling the first stage SCR predriver.
The zero cross line voltage detection circuit consists
of two enhancement MOSFETS and a photodiode.
The inhibit voltage of the network is determined by the
enhancement voltage of the N-channel FET. The Pchannel FET is enabled by a photocurrent source that
permits the FET to conduct the main voltage to gate
on the N-channel FET. Once the main voltage can
enable the N-channel, it clamps the base of the phototransistor, disabling the first stage SCR predriver.
The 600/800 V blocking voltage permits control of offline voltages up to 240 VAC, with a safety factor of
more than two, and is sufficient for as much as
380 VAC.
The IL410/ IL4108 isolates low-voltage logic from
120, 240, and 380 VAC lines to control resistive,
inductive, or capacitive loads including motors, solenoids, high current thyristors or TRIAC and relays.
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1
IL410/ IL4108
Vishay Semiconductors
Order Information
Part
Remarks
IL410
600 V VDRM, DIP-6
IL4108
800 V VDRM, DIP-6
IL410-X006
600 V VDRM, DIP-6 400 mil (option 6)
IL410-X007
600 V VDRM, SMD-6 (option 7)
IL410-X009
600 V VDRM, SMD-6 (option 9)
IL4108-X006
800 V VDRM, DIP-6 400 mil (option 6)
IL4108-X007
800 V VDRM, SMD-6 (option 7)
IL4108-X009
800 V VDRM, SMD-6 (option 9)
For additional information on the available options refer to
Option Information.
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Symbol
Value
Reverse voltage
Parameter
Test condition
VR
6.0
V
Forward current
IF
60
mA
Surge current
IFSM
2.5
A
Power dissipation
Pdiss
Derate from 25 °C
Unit
100
mW
1.33
mW/°C
Output
Parameter
Test condition
Peak off-state voltage
Part
Symbol
Value
Unit
IL410
VDM
600
V
IL4108
VDM
800
V
ITM
300
mA
3.0
A
Pdiss
500
mW
6.6
mW/°C
RMS on-state current
Single cycle surge current
Total power dissipation
Derate from 25 °C
Coupler
Parameter
Test condition
Isolation test voltage (between t = 1.0 min.
emitter and detector, climate per
DIN 500414, part 2, Nov. 74)
Pollution degree (DIN VDE
0109)
Symbol
Value
Unit
VISO
5300
VRMS
2
Creepage
≥ 7.0
mm
Clearance
≥ 7.0
mm
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2
Document Number 83627
Rev. 1.4, 26-Apr-04
IL410/ IL4108
Vishay Semiconductors
Parameter
Test condition
Symbol
Value
Isolation resistance
Unit
≥ 175
Comparative tracking index per
DIN IEC 112/VDE 0303 part 1,
group IIIa per DIN VDE 6110
VIO = 500 V, Tamb = 25 °C
RIO
≥ 1012
Ω
VIO = 500 V, Tamb = 100 °C
RIO
≥ 10
Ω
11
Storage temperature range
Tstg
- 55 to + 150
°C
Ambient temperature range
Tamb
- 55 to + 100
°C
Tsld
260
°C
Soldering temperature
max. ≤ 10 sec. dip soldering
≥ 0.5 mm from case bottom
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Forward voltage
Test condition
IF = 10 mA
Reverse current
VR = 6.0 V
Input capacitance
VF = 0 V, f = 1.0 MHz
Thermal resistance, junction to
ambient
Symbol
Typ.
Max
Unit
VF
Min
1.16
1.35
V
10
µA
IR
0.1
CIN
25
pF
Rthja
750
°C/W
Output
Parameter
Off-state voltage
Test condition
ID(RMS) = 70 µA
Repetitive peak off-state voltage IDRM = 100 µA
Part
Symbol
Min
Typ.
IL410
VD(RMS)
424
460
IL4108
VD(RMS)
565
V
IL410
VDRM
600
V
IL4108
VDRM
800
Off-state current
VD = VDRM, Tamb = 100 °C,
IF = 0 mA
ID(RMS)1
VD = VDRM, IF = Rated IFT
ID(RMS)2
On-state voltage
IT = 300 mA
VTM
On-state current
PF = 1.0, VT(RMS) = 1.7 V
Surge (non-repetitive), on-state
current
Max
Unit
V
V
10
µA
200
µA
3.0
V
ITM
300
mA
f = 50 Hz
ITSM
3.0
A
Trigger current 1
VD = 5.0 V
IFT1
2.0
mA
Trigger current 2
VOP = 220 V, f = 50 Hz,
TJ = 100 °C, tpF > 10 ms
IFT2
6.0
mA
Trigger current temp. gradient
Inhibit voltage temp. gradient
Off-state current in inhibit state
IF = IFT1, VDRM
Holding current
1.7
100
∆IFT1/∆Tj
7.0
14
µA/°C
∆IFT2/∆Tj
7.0
14
µA/°C
∆VDINH/∆Tj
-20
IDINH
50
200
µA
IH
65
500
µA
mV/°C
Latching current
VT = 2.2 V
IL
5.0
Zero cross inhibit voltage
IF = Rated IFT
VIH
15
Turn-on time
VRM = VDM = VD(RMS)
ton
35
µs
Turn-off time
PF = 1.0, IT = 300 mA
toff
50
µs
Document Number 83627
Rev. 1.4, 26-Apr-04
mA
25
V
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3
IL410/ IL4108
Vishay Semiconductors
Parameter
Test condition
Critical rate of rise of off-state
voltage
VD = 0.67 VDRM, TJ = 25 °C
VD = 0.67 VDRM, TJ = 80 °C
Critical rate of rise of voltage at
current commutation
VD = 0.67 VDRM,
dI/dtcrq ≤ 15 A/ms, TJ = 25 °C
VD = 0.67 VDRM,
dI/dtcrq ≤ 15 A/ms, TJ = 80 °C
Part
Critical rate of rise of on-state
Thermal resistance, junction to
ambient
Symbol
Min
dV/dtcr
10000
Typ.
Max
V/µs
Unit
dV/dtcr
5000
V/µs
dV/dtcrq
10000
V/µs
dV/dtcrq
5000
V/µs
dI/dtcr
8.0
A/µs
Rthja
150
°C/W
Coupler
Parameter
Critical rate of rise of coupled
input/output voltage
Test condition
Symbol
IT = 0 A, VRM = VDM = VD(RMS)
dVIO/dt
10000
V/µs
CCM
0.01
pF
0.8
pF
Ω
Ω
Common mode coupling
capacitance
Min
Typ.
Capacitance (input-output)
f = 1.0 MHz, VIO = 0 V
CIO
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
≥
1012
VIO = 500 V, Tamb = 100 °C
RIO
≥
1011
Max
Unit
Power Factor Considerations
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4
1
Cs(µF) = 0.0032 (µF)* 10^(0.0066IL (mA)
Cs - Shunt Capacitance - µF
A snubber isn’t needed to eliminate false operation of
the TRIAC driver because of the IL410/ IL4108’s high
static and commutating dV/dt with loads between 1.0
and 0.8 power factors. When inductive loads with
power factors less than 0.8 are being driven, include
a RC snubber or a single capacitor directly across the
device to damp the peak commutating dV/dt spike.
Normally a commutating dV/dt causes a turning-off
device to stay on due to the stored energy remaining
in the turning-off device.
But in the case of a zero voltage crossing optotriac,
the commutating dV/dt spikes can inhibit one half of
the TRIAC from turning on. If the spike potential
exceeds the inhibit voltage of the zero cross detection
circuit, half of the TRIAC will be held-off and not turnon. This hold-off condition can be eliminated by using
a snubber or capacitor placed directly across the
optotriac as shown in Figure 1. Note that the value of
the capacitor increases as a function of the load current.
.1
Ta = 25°C, PF = 0.3
.01
IF = 2.0 mA
.001
0
iil410_01
50
100
150
200
250
300
350
400
IL - Load Current - mA(RMS)
Figure 1. Shunt Capacitance vs. Load Current
Document Number 83627
Rev. 1.4, 26-Apr-04
IL410/ IL4108
Vishay Semiconductors
The hold-off condition also can be eliminated by providing a higher level of LED drive current. The higher
LED drive provides a larger photocurrent which
causes the phototransistor to turn-on before the commutating spike has activated the zero cross network.
Figure 2 shows the relationship of the LED drive for
power factors of less than 1.0. The curve shows that
if a device requires 1.5 mA for a resistive load, then
1.8 times (2.7 mA) that amount would be required to
control an inductive load whose power factor is less
than 0.3.
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
10000
IFth Normalized to IFth @ PF = 1.0
Ta = 25°C
1.8
If(pk) - Peak LED Current - mA
NIFth - Normalized LED
Trigger Current
2.0
1.6
1.4
1.2
1.0
0.8
0.0
0.2
0.4
0.6
0.8
PF - Power Factor
1.0
t
.05
.1
.2
.5
100
10
10 -6
DF =τ/t
10 -5
iil410_04
Figure 2. Normalized LED Trigger Current vs. Power Factor
10 -4 10 -3 10 -2 10 -1
t -LED Pulse Duration -s
10 0
101
Figure 4. Peak LED Current vs. Duty Factor, Tau
150
1.4
1.3
Ta = -55°C
1.2
LED - LED Power - mW
VF - Forward Voltage - V
.005
.01
.02
1000
1.2
iil410_02
τ
Duty Factor
Ta = 25°C
1.1
1.0
0.9
Ta = 85°C
0.8
0.7
.1
iil410_03
1
10
IF - Forward Current - mA
Document Number 83627
Rev. 1.4, 26-Apr-04
50
0
-60
100
Figure 3. Forward Voltage vs. Forward Current
100
iil410_05
-40
-20
0
20
40
60
Ta - Ambient Temperature - °C
80
100
Figure 5. Maximum LED Power Dissipation
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5
IL410/ IL4108
Vishay Semiconductors
tgd=f (IFIFT25°C), VD=200 V,
f=40 to 60 Hz, parameter: Tj
IT = f(VT),
parameter: Tj
iil410_06
iil410_09
Figure 6. Typical Output Characteristics
Figure 9. Typical Trigger Delay Time
ITRMS=f(TA),
RthJA=150 K/W
Device switch
soldered in pcb
or base plate.
IDINH =f (IF/IFT25°C),
VD=600 V, parameter: Tj
iil410_07
iil410_10
Figure 7. Current Reduction
Figure 10. Typical Inhibit Current
40 to 60 Hz
line operation,
Ptot=f(ITRMS)
ITRMS=f(TPIN5), RthJ–PIN5=16.5 K/W
Thermocouple measurement must
be performed potentially separated
to A1 and A2. Measuring junction
as near as possible at the case.
iil410_08
iil410_11
Figure 8. Current Reduction
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Figure 11. Power Dissipation 40 to 60 Hz Line Operation
Document Number 83627
Rev. 1.4, 26-Apr-04
IL410/ IL4108
Vishay Semiconductors
VDINHmin=f(IF/IFT25°C),
parameter: Tj
Device zero voltage
switch can be triggered
only in hatched area
below Tj curves.
1
6
2
5
3
4
0.1 µF
220 V~
iil410_13
iil410_12
Figure 12. Typical Static Inhibit Voltage Limit
Figure 13. 1- Apply a Capacitor to the Supply Pins at the Load-Side
Technical Information
Commutating Behavior
The use of a triac at the output creates difficulties in
commutation due to both the built-in coupled thyristor
systems. The triac can remain conducting by parasitic
triggering after turning off the control current. However, if the IL410/4108 is equipped with two separate
thyristor chips featuring high dv/dt strength, no RC circuit is needed in case of commutation.
33 Ω
1
6
2
5
3
4
22 nF
220 V~
Current commutation:
The values 100 A/ms with following peak reverse
recovery current > 80 mA should not be exceeded.
Avoiding high-frequency turn-off current
oscillations:
This effect can occur when switching a circuit. Current
oscillations which appear essentially with inductive
loads of a higher winding capacity result in current
commutation and can generate a relatively high peak
reverse recovery current. The following alternating
protective measures are recommended for the individual operating states:
iil410_14
Figure 14. 2 - Connect a Series Resistor to the Output and Bridge
Both by a Capacitor
500 µH
1
6
2
5
3
4
22 nF
220 V~
iil410_15
Figure 15. 3 - Connect a Choke of Low Winding Cap. in Series,
e.g., a Ringcore Choke, with Higher Load Currents
Note: Measures 2 to 3 are especially required for the load separated from the IL410/ IL4108 during operation. The above mentioned effects do not occur with IL410/ IL4108 circuits which are
Document Number 83627
Rev. 1.4, 26-Apr-04
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7
IL410/ IL4108
Vishay Semiconductors
connected to the line by transformers and which are not mechanically interrupted.
In such cases as well as in applications with a resistive load the corresponding protective circuits can be neglected.
Application Note
• Over voltage protection: A voltage-limiting varistor
(e.g. SIO VS05K250) which directly connected to the
IL410/ IL4108 can protect the component against
overvoltage.
Control And Turn-On Behavior
The trigger current of the IL410/ IL4108 has a positive
temperature gradient. The time which expires from
applying the control current to the turn-on of the load
current is defined as the trigger delay time (tgd). On
the whole this is a function of the overdrive meaning
the ratio of the applied control current versus the trigger current (IF/IFT). If the value of the control current
corresponds to that of the individual trigger current of
IL410/4108 turn-on delay times amounts to a few milliseconds only. The shortest times of 5.0 to 10 µs can
be achieved for an overdrive greater or equal than 10.
The trigger delay time rises with an increase in temperature.
For very short control current pulses (tplF < 500 µs) a
correspondingly higher control current must be used.
Only the IL410/ IL4108 without zero voltage switch is
suitable for this operating mode.
Zero Voltage Switch
The IL410/ IL4108 with zero voltage switch can only
be triggered during the zero crossing the sine AC voltage. This prevents current spikes, e.g. when turningon cold lamps or capacitive loads.
Applications
Direct switching operation: The IL410/ IL4108 switch
is mainly suited to control synchronous motors,
valves, relays and solenoids in Grätz circuits. Due to
the low latching current (500 µA) and the lack of an
RC circuit at the output, very low load currents can
easily be switched.
Indirect switching operation: The IL410/ IL4108
switch acts here as a driver and thus enables the driving of thyristors and triacs of higher performance by
microprocessors. The driving current pulse should not
exceed the maximum permissible surge current of the
IL410/ IL4108. For this reason, the IL410/ IL4108
without zero voltage switch often requires current limiting by a series resistor.
The favorably low latching current in this operating
mode results in AC current switches which can handle
load currents from some milliamperes up to high currents.
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Document Number 83627
Rev. 1.4, 26-Apr-04
IL410/ IL4108
Vishay Semiconductors
Package Dimensions in Inches (mm)
3
2
1
4
5
6
pin one ID
.248 (6.30)
.256 (6.50)
ISO Method A
.335 (8.50)
.343 (8.70)
.039
(1.00)
Min.
.300 (7.62)
typ.
.048 (1.22)
.052 (1.32)
.130 (3.30)
.150 (3.81)
4°
typ .
18°
.033 (0.84) typ.
.018 (0.46)
.020 (0.51)
3°–9°
.033 (0.84) typ.
.100 (2.54) typ
i178014
Option 6
Option 7
.407 (10.36)
.391 (9.96)
.307 (7.8)
.291 (7.4)
.300 (7.62)
TYP.
.008 (.20)
.012 (.30)
.130 (3.30)
.150 (3.81)
.300–.347
(7.62–8.81)
Option 9
.375 (9.53)
.395 (10.03)
.300 (7.62)
ref.
.028 (0.7)
MIN.
.180 (4.6)
.160 (4.1) .0040 (.102)
.0098 (.249)
.315 (8.0)
MIN.
.014 (0.35)
.010 (0.25)
.400 (10.16)
.430 (10.92)
Document Number 83627
Rev. 1.4, 26-Apr-04
.331 (8.4)
MIN.
.406 (10.3)
MAX.
.012 (.30) typ.
.020 (.51)
.040 (1.02)
.315 (8.00)
min.
15° max.
18450
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9
IL410/ IL4108
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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10
Document Number 83627
Rev. 1.4, 26-Apr-04