DISCRETE SEMICONDUCTORS DATA SHEET BF904WR N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors 1995 Apr 25 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF904WR FEATURES PINNING • Specially designed for use at 5 V supply voltage • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz • Superior cross-modulation performance during AGC. PIN SYMBOL DESCRIPTION 1 s, b 2 d drain 3 g2 gate 2 4 g1 gate 1 source APPLICATIONS • VHF and UHF applications with 3 to 7 V supply voltage such as television tuners and professional communications equipment. d handbook, halfpage 3 4 DESCRIPTION g2 Enhancement type field-effect transistor in a plastic microminiature SOT343R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. g1 2 1 Top view s,b MAM192 CAUTION Marking code: MC. The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. Fig.1 Simplified outline (SOT343R) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VDS drain-source voltage − − 7 V ID drain current − − 30 mA Ptot total power dissipation − − 280 mW Tj operating junction temperature − − 150 °C yfs forward transfer admittance 22 25 30 mS Cig1-s input capacitance at gate 1 − 2.2 2.6 pF Crs reverse transfer capacitance f = 1 MHz − 25 35 fF F noise figure f = 800 MHz − 2 − dB 1995 Apr 25 2 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF904WR LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 7 V ID drain current − 30 mA IG1 gate 1 current − ±10 mA IG2 gate 2 current Ptot total power dissipation Tstg Tj − ±10 mA − 280 mW storage temperature −65 +150 °C operating junction temperature − +150 °C up to Tamb = 50 °C; see Fig.2; note 1 Note 1. Device mounted on a printed-circuit board. MLD150 300 handbook, halfpage Ptot (mW) 200 100 0 0 50 100 150 200 Tamb ( oC) Fig.2 Power derating curve. 1995 Apr 25 3 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF904WR THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 350 K/W Rth j-s thermal resistance from junction to soldering point Ts = 91 °C; note 2 210 K/W Notes 1. Device mounted on a printed-circuit board. 2. Ts is the temperature at the soldering point of the source lead. STATIC CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V(BR)G1-SS gate 1-source breakdown voltage VG2-S = VDS = 0; IG1-S = 10 mA 6 15 V V(BR)G2-SS gate 2-source breakdown voltage VG1-S = VDS = 0; IG2-S = 10 mA 6 15 V V(F)S-G1 forward source-gate 1 voltage VG2-S = VDS = 0; IS-G1 = 10 mA 0.5 1.5 V V(F)S-G2 forward source-gate 2 voltage VG1-S = VDS = 0; IS-G2 = 10 mA 0.5 1.5 V VG1-S(th) gate 1-source threshold voltage VG2-S = 4V; VDS = 5 V; ID = 20 µA 0.3 1 V VG2-S(th) gate 2-source threshold voltage VG1-S = VDS = 5 V; ID = 20 µA 0.3 1.2 V IDSX drain-source current VG2-S = 4 V; VDS = 5 V; RG1 = 120 kΩ; note 1 8 13 mA IG1-SS gate 1 cut-off current VG2-S = VDS = 0; VG1-S = 5 V − 50 nA IG2-SS gate 2 cut-off current VG1-S = VDS = 0; VG2-S = 5 V − 50 nA Note 1. RG connects gate 1 to VGG = 5 V. DYNAMIC CHARACTERISTICS Common source; Tamb = 25 °C; VDS = 5 V; VG2-S = 4 V; ID = 10 mA; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT yfs forward transfer admittance pulsed; Tj = 25 °C 22 25 30 mS Cig1-s input capacitance at gate 1 f = 1 MHz − 2.2 2.6 pF Cig2-s input capacitance at gate 2 f = 1 MHz 1 1.5 2 pF Cos drain-source capacitance f = 1 MHz 1 1.3 1.6 pF Crs reverse transfer capacitance f = 1 MHz − 25 35 fF F noise figure f = 200 MHz; GS = 2 mS; BS = BSopt − 1 1.5 dB f = 800 MHz; GS = GSopt; BS = BSopt − 2 2.8 dB 1995 Apr 25 4 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF904WR MRA769 MLD268 40 0 handbook, gain halfpage reduction (dB) 10 Y fs (mS) 30 20 20 30 40 10 50 0 50 0 50 100 0 150 o T j ( C) 1 2 3 4 VAGC (V) f = 50 MHz. Tj = 25 °C. Fig.3 Forward transfer admittance as a function of junction temperature; typical values. Fig.4 MLD270 MRA771 120 Typical gain reduction as a function of AGC voltage. 20 handbook, halfpage Vunw ID (dB µV) (mA) V G2 S = 4 V 110 15 100 10 3V 2.5 V 2V 1.5 V 5 90 1V 80 0 0 10 20 30 40 50 gain reduction (dB) 0 0.4 0.8 1.2 1.6 2.0 V G1 S (V) VGG = 5 V; fw = 50 MHz. funw = 60 MHz; Tamb = 25 °C; RG1 = 120 kΩ. Fig.5 VDS = 5 V. Tj = 25 °C. Unwanted voltage for 1% cross-modulation as a function of gain reduction; typical values; see Fig.19. 1995 Apr 25 Fig.6 Transfer characteristics; typical values. 5 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF904WR MLD269 MLD271 20 150 handbook, halfpage handbook, halfpage V G1 S = 1.4 V ID (mA) 16 V G2 S = 4 V 3.5 V I G1 (µA) 1.3 V 3V 100 1.2 V 12 1.1 V 8 2.5 V 1.0 V 50 2V 0.9 V 4 0 0 0 2 4 6 8 10 V DS (V) 0 0.5 1.0 1.5 2.0 2.5 V G1 S (V) VDS = 5 V. Tj = 25 °C. VG2-S = 4 V. Tj = 25 °C. Fig.8 Fig.7 Output characteristics; typical values. Gate 1 current as a function of gate 1 voltage; typical values. MLD273 MLD272 16 40 handbook, halfpage handbook, halfpage y fs (mS) ID (mA) V G2 S = 4 V 12 30 3.5 V 3V 20 8 2.5 V 4 10 2V 0 0 0 4 8 12 16 0 20 I D (mA) VDS = 5 V. Tj = 25 °C. Fig.9 1995 Apr 25 10 20 30 40 50 I G1 (µA) VDS = 5 V; VG2-S = 4 V. Tj = 25 °C. Forward transfer admittance as a function of drain current; typical values. Fig.10 Drain current as a function of gate 1 current; typical values. 6 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF904WR MLD275 MLD274 12 20 handbook, halfpage handbook, halfpage R G1 = 47 kΩ ID (mA) ID 68 kΩ 82 kΩ (mA) 15 100 kΩ 8 120 kΩ 150 kΩ 10 180 kΩ 220 kΩ 4 5 0 0 0 1 2 3 4 0 5 2 4 VGG (V) VDS = 5 V; VG2-S = 4 V. RG1 = 120 kΩ (connected to VGG); Tj = 25 °C. 6 V GG = V DS (V) VG2-S = 4 V. RG1 connected to VGG; Tj = 25 °C. Fig.11 Drain current as a function of gate 1 supply voltage (= VGG); typical values; see Fig.19. Fig.12 Drain current as a function of gate 1 (= VGG) and drain supply voltage; typical values; see Fig.19. MLD276 12 MLB945 40 handbook, halfpage handbook, halfpage V GG = 5 V 4.5 V ID I G1 (µA) 4V (mA) V GG = 5 V 30 3.5 V 8 8 4.5 V 3V 4V 3.5 V 20 3V 4 10 0 0 2 4 V G2 S (V) 0 6 0 VDS = 5 V; Tj = 25 °C. RG = 120 kΩ (connected to VGG). 4 V G2 S (V) 6 VDS = 5 V; Tj = 25 °C. RG = 120 kΩ (connected to VGG). Fig.13 Drain current as a function of gate 2 voltage; typical values; see Fig.19. 1995 Apr 25 2 Fig.14 Gate 1 current as a function of gate 2 voltage; typical values; see Fig.19. 7 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF904WR MLD277 10 2 handbook, halfpage MLD278 10 3 y is (mS) 10 3 ϕ rs (deg) y rs (µS) 10 2 10 ϕ rs 10 2 y rs b is 1 10 10 g is 10 1 10 102 f (MHz) 1 1 10 3 10 102 f (MHz) 10 3 VDS = 5 V; VG2 = 4 V. ID =10 mA; Tamb = 25 °C. VDS = 5 V; VG2 = 4 V. ID = 10 mA; Tamb = 25 °C. Fig.15 Input admittance as a function of frequency; typical values. MLD279 10 2 y fs MLD280 10 2 10 handbook, halfpage yos (mS) ϕ fs y fs (mS) Fig.16 Reverse transfer admittance and phase as a function of frequency; typical values. (deg) bos 1 ϕ fs 10 10 gos 10 1 10 2 10 1 1 10 102 f (MHz) 10 3 VDS = 5 V; VG2 = 4 V. ID = 10 mA; Tamb = 25 °C. f (MHz) 10 3 VDS = 5 V; VG2 = 4 V. ID = 10 mA; Tamb = 25 °C. Fig.17 Forward transfer admittance and phase as a function of frequency; typical values. 1995 Apr 25 102 Fig.18 Output admittance as a function of frequency; typical values. 8 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF904WR VAGC R1 10 k Ω C1 4.7 nF C2 R GEN 50 Ω R2 50 Ω C3 DUT 4.7 nF 12 pF L1 ≈ 450 nH RL 50 Ω C4 R G1 4.7 nF VI VGG V DS Fig.19 Cross-modulation test set-up. 1995 Apr 25 9 MLD171 Philips Semiconductors Product specification N-channel dual-gate MOS-FET Table 1 f (MHz) BF904WR Scattering parameters: VDS =5 V; VG2-S = 4 V; ID = 10 mA s21 s11 MAGNITUDE (ratio) 40 0.989 ANGLE (deg) s12 MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) 2.420 175.7 0.000 −3.4 s22 ANGLE (deg) 79.9 MAGNITUDE (ratio) ANGLE (deg) 0.993 −1.6 100 0.985 −8.3 2.414 169.1 0.001 78.3 0.992 −3.9 200 0.976 −16.4 2.368 158.8 0.003 80.3 0.987 −7.8 300 0.958 −24.1 2.301 148.5 0.004 73.7 0.980 −11.4 400 0.942 −32.0 2.251 138.8 0.005 70.7 0.974 −15.2 500 0.918 −39.3 2.170 129.5 0.005 67.2 0.966 −18.7 600 0.899 −46.0 2.080 120.7 0.005 67.8 0.958 −22.2 700 0.876 −52.6 2.001 112.1 0.005 68.6 0.951 −25.5 800 0.852 −58.8 1.924 103.2 0.005 72.9 0.944 −28.9 900 0.823 −64.9 1.829 94.7 0.005 78.7 0.937 −32.1 1000 0.800 −70.9 1.747 86.5 0.005 88.3 0.933 −35.2 1200 0.750 −82.4 1.621 70.7 0.005 120.5 0.928 −41.7 1400 0.719 −92.7 1.535 54.6 0.008 139.8 0.930 −48.4 1600 0.682 −102.5 1.424 39.4 0.010 137.8 0.924 −54.9 1800 0.642 −109.8 1.349 22.5 0.013 156.8 0.928 −62.9 2000 0.602 −116.5 1.283 1.1 0.018 175.1 0.928 −73.1 2200 0.547 −124.9 1.130 −15.1 0.014 172.6 0.887 −81.0 2400 0.596 −128.7 1.018 −49.1 0.040 −163.9 0.837 −95.8 2600 0.682 −132.6 0.979 −79.4 0.077 −164.0 0.778 −109.6 2800 0.771 −142.5 0.804 −116.2 0.120 178.8 0.629 −119.5 3000 0.793 −157.5 0.541 −153.5 0.149 158.3 0.479 −119.9 Table 2 Noise data: VDS = 5 V; VG2-S = 4 V; ID = 10 mA Γopt f (MHz) Fmin (dB) (ratio) (deg) 800 2.00 .686 49.6 1995 Apr 25 10 rn 50.40 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF904WR PACKAGE OUTLINE 1.00 max 0.2 M A 0.1 max 0.4 0.2 0.2 M B 0.2 3 4 A 1.35 1.15 2.2 2.0 2 0.3 0.1 1 0.25 0.10 0.7 0.5 1.4 1.2 2.2 1.8 B Dimensions in mm. Fig.20 SOT343R. 1995 Apr 25 11 MSB367 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF904WR DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1995 Apr 25 12