PHILIPS BSP304A

DISCRETE SEMICONDUCTORS
DATA SHEET
BSP304; BSP304A
P-channel enhancement mode
vertical D-MOS transistors
Product specification
File under Discrete Semiconductors, SC07
Philips Semiconductors
1995 Apr 07
Philips Semiconductors
Product specification
P-channel enhancement mode
vertical D-MOS transistors
BSP304; BSP304A
FEATURES
DESCRIPTION
• Direct interface to C-MOS, TTL etc.
P-channel enhancement mode vertical D-MOS transistor
in a TO-92 variant package.
• High speed switching
• No secondary breakdown.
APPLICATIONS
• Intended for use as a Line current interruptor in
telephone sets and for applications in relay, high speed
and line transformer drivers.
d
handbook, halfpage
1
2
3
g
PINNING - TO-92 variant
MAM144
PIN
SYMBOL
s
DESCRIPTION
BSP304
1
g
gate
2
d
drain
3
s
source
1
s
source
2
g
gate
3
d
drain
Fig.1 Simplified outline and symbol.
BSP304A
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage (DC)
−
−300
V
VGSO
gate-source voltage (DC)
open drain
−
±20
V
VGSth
gate-source threshold voltage
ID = −1 mA; VDS = VGS
−1.7
−2.55
V
ID
drain current (DC)
−
−170
mA
RDSon
drain-source on-state resistance
ID = −170 mA;
VGS = −10 V
−
17
Ω
Ptot
total power dissipation
up to Tamb = 25 °C
−
1
W
1995 Apr 07
2
Philips Semiconductors
Product specification
P-channel enhancement mode
vertical D-MOS transistors
BSP304; BSP304A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
−
−300
V
−
±20
V
−
−170
mA
−
−0.75
A
−
1
W
storage temperature
−65
+150
°C
operating junction temperature
−
150
°C
VDS
drain-source voltage (DC)
VGSO
gate-source voltage (DC)
ID
drain current (DC)
IDM
peak drain current
Ptot
total power dissipation
Tstg
Tj
open drain
up to Tamb = 25 °C; note 1
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
note 1
VALUE
UNIT
125
K/W
Note to the “Limiting values” and “Thermal characteristics”
1. Device mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for drain lead minimum 1 cm2.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)DSS
drain-source breakdown voltage
VGS = 0; ID = −10 µA
−300
−
−
V
VGSth
gate-source threshold voltage
VDS = VGS ; ID = −1 mA
−1.7
−
−2.55
V
IDSS
drain-source leakage current
VGS = 0; VDS = −240 V
−
−
−100
nA
IGSS
gate leakage current
VGS = ±20 V; VDS = 0
−
−
±100
nA
RDSon
drain-source on-state resistance
VGS = −10 V; ID = −170 mA
−
−
17
Ω
yfs
forward transfer admittance
VDS = −25 V; ID = −170 mA
100
−
−
mS
Ciss
input capacitance
VGS = 0; VDS = −25 V; f = 1 MHz −
60
90
pF
Coss
output capacitance
VGS = 0; VDS = −25 V; f = 1 MHz −
15
30
pF
Crss
reverse transfer capacitance
VGS = 0; VDS = −20 V; f = 1 MHz −
5
15
pF
Switching times (see Figs 2 and 3)
ton
turn-on time
VGS = 0 to −10 V; VDD = −50 V;
ID = −250 mA
−
5
10
ns
toff
turn-off time
VGS = −10 to 0 V; VDD = −50 V;
ID = −250 mA
−
15
30
ns
1995 Apr 07
3
Philips Semiconductors
Product specification
P-channel enhancement mode
vertical D-MOS transistors
BSP304; BSP304A
VDD = 50 V
handbook, halfpage
handbook, halfpage
10 %
INPUT
90 %
ID
0
10 %
10 V
OUTPUT
50 Ω
90 %
MBB689
t on
Fig.2 Switching time test circuit.
MBB690
Fig.3 Input and output waveforms.
MLC697
1.2
t off
MLC699
1
handbook, halfpage
handbook, halfpage
ID
(A)
P tot
tp =
10 µs
(1)
(W)
0.8
10
100 µs
1 ms
1
10 ms
100 ms
0.4
10
tp
δ= T
P
2
1s
DC
t
tp
T
0
0
50
100
10
150
200
o
T amb ( C)
3
1
10
10 2
δ = 0.01.
Tamb = 25 °C.
(1) RDSon limitation.
Fig.4 Power derating curve.
1995 Apr 07
Fig.5 DC SOAR.
4
V
DS
(V)
10 3
Philips Semiconductors
Product specification
P-channel enhancement mode
vertical D-MOS transistors
BSP304; BSP304A
MLC688
MLD139
100
800
handbook, halfpage
handbook, halfpage
C
(pF)
ID
(mA)
80
V GS = 10 V
P=1W
600
7V
6V
C iss
60
5V
400
40
4V
200
20
3.5 V
Coss
3V
C rss
0
0
10
20
V DS (V)
0
30
0
2
4
6
8
10
12
V DS (V)
VGS = 0.
Tj = 25 °C.
f = 1 MHz.
Tj = 25 °C.
Fig.6
Capacitance as a function of drain source
voltage; typical values.
Fig.7 Typical output characteristics.
MLC689
MLC691
80
800
handbook, halfpage
handbook, halfpage
R DSon
ID
(mA)
(Ω)
600
60
400
40
200
20
0
0
2
4
6
0
8
10
V GS (V)
0
4
6
8
10
VGS (V)
ID = −170 mA.
Tj = 25 °C.
VDS = −25 V.
Tj = 25 °C.
Fig.9
Fig.8 Typical transfer characteristics.
1995 Apr 07
2
5
Drain-source on-state resistance as a function
of gate-source voltage; typical values.
Philips Semiconductors
Product specification
P-channel enhancement mode
vertical D-MOS transistors
BSP304; BSP304A
MLC692
60
DSon
(Ω)
50
handbook, halfpage
VGS = 3 V
4V
5V
k
1.0
40
30
6V
0.9
20
7V
10 V
10
0
MLC696
1.1
handbook,
halfpage
R
1
102
10
I D (mA)
0.8
10 3
50
0
50
100
o
150
T j ( C)
V GSth at T j
k = ------------------------------------V GSth at 25°C
Typical VGSth at ID = −1 mA; VDS =VGS.
Tj = 25 °C.
Fig.10 Drain-source on-state resistance as a
function of drain current; typical values.
Fig.11 Temperature coefficient of gate-source
threshold voltage.
MLC695
2.5
handbook, halfpage
k
2
1.5
1
0.5
0
50
0
50
100
o
150
T j ( C)
R DSon at T j
k = ---------------------------------------R DSon at 25 °C
Typical RDSon at ID = −170 mA; VGS = −10 V.
Fig.12 Temperature coefficient of drain-source
on-state resistance.
1995 Apr 07
6
Philips Semiconductors
Product specification
P-channel enhancement mode
vertical D-MOS transistors
BSP304; BSP304A
MLC698
3
handbook,10
full pagewidth
R th j-a
(K/W)
10
2
δ=
0.75
0.5
0.2
0.1
10
0.05
0.02
0.01
tp
δ= T
P
1
0
t
tp
T
10
1
10
5
10
4
10
3
10
2
10
1
1
10
10
2
t p (s)
10 3
Tamb = 25 °C.
Fig.13 Transient thermal resistance from junction to ambient as a function of pulse time; typical values.
1995 Apr 07
7
Philips Semiconductors
Product specification
P-channel enhancement mode
vertical D-MOS transistors
BSP304; BSP304A
PACKAGE OUTLINE
handbook, full pagewidth
0.40
min
4.2 max
5.2 max
1.6
12.7 min
0.48
0.40
1
4.8
max
2
2.54
3
0.66
0.56
2.5 max
(1)
Dimensions in mm.
(1) Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
Fig.14 TO-92 variant.
1995 Apr 07
8
MBC015 - 1
Philips Semiconductors
Product specification
P-channel enhancement mode
vertical D-MOS transistors
BSP304; BSP304A
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1995 Apr 07
9