PHILIPS BLV25

DISCRETE SEMICONDUCTORS
DATA SHEET
BLV25
VHF power transistor
Product specification
August 1986
Philips Semiconductors
Product specification
VHF power transistor
BLV25
DESCRIPTION
FEATURES
N-P-N silicon planar epitaxial
transistor primarily for use in
v.h.f.-f.m. broadcast transmitters.
• internally matched input for
wideband operation and high
power gain;
• multi-base structure and diffused
emitter ballasting resistors for an
optimum temperature profile;
• gold-metallization ensures
excellent reliability.
The transistor has a 1⁄2in 6-lead
flange envelope with a ceramic cap.
All leads are isolated from the flange.
QUICK REFERENCE DATA
R.F. performance up to Th = 25 °C in an unneutralized common-emitter class-B circuit.
MODE OPERATION
narrow band; c.w.
VCE
V
f
MHz
PL
W
PS
W
Gp
dB
η
%
28
108
175
< 17,5
> 10,0
> 65
PIN CONFIGURATION
PINNING
PIN
handbook, halfpage
1
3
5
2
4
DESCRIPTION
1
emitter
2
emitter
3
base
4
collector
5
emitter
6
emitter
6
MSB006
Fig.1 Simplified outline, SOT119A.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
August 1986
2
Philips Semiconductors
Product specification
VHF power transistor
BLV25
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage
(peak value); VBE = 0
VCESM
max.
65 V
open base
VCEO
max.
33 V
VEBO
max.
4 V
d.c. or average
IC; IC(AV)
max.
17, 5 A
(peak value); f > 1 MHz
ICM
max.
35 A
Ptot (d.c.)
max.
220 W
R.F. power dissipation (f > 1 MHz); Tmb = 25 °C
Ptot (r.f.)
max.
270 W
R.F. power dissipation (f > 1 MHz); Th = 70 °C
Ptot (r.f.)
max.
146 W
Storage temperature
Tstg
Operating junction temperature
Tj
Emitter-base voltage (open collector)
Collector current
Total power dissipation at Tmb = 25 °C
MGP294
102
handbook, halfpage
−65
+150 °C
to
200 °C
max.
MGP295
300
handbook, halfpage
Ptot
(W)
IC
(A)
ΙΙΙ
Tmb = 25 °C
200
ΙΙ
(1)
10
Th = 70 °C
1
1
10
100
VCE (V)
Ι
0
102
0
50
100
Th (°C)
I Continuous d.c. operation
II Continuous r.f. operation (f > 1 MHz)
III Short-time operation during mismatch; (f > 1 MHz).
(1) Second breakdown limit.
Fig.2 D.C. SOAR.
Fig.3 Power derating curves vs. temperature.
THERMAL RESISTANCE
(dissipation = 150 W; Tmb = 72 °C, i.e. Th = 42 °C)
From junction to mounting base (d.c. dissipation)
Rth j-mb(dc)
max
0,85 K/W
From junction to mounting base (r.f. dissipation)
Rth j-mb(rf)
max
0,60 K/W
From mounting base to heatsink
Rth mb-h
max
0,2 K/W
August 1986
3
Philips Semiconductors
Product specification
VHF power transistor
BLV25
CHARACTERISTICS
Tj = 25 °C
Collector-emitter breakdown voltage
VBE = 0; IC = 50 mA
V(BR)CES
>
65 V
open base; IC = 200 mA
V(BR)CEO
>
33 V
V(BR)EBO
>
4 V
ICES
<
25 mA
open base
ESBO
>
20 mJ
RBE = 10 Ω
ESBR
>
20 mJ
typ.
50
Emitter-base breakdown voltage
open collector; IE = 20 mA
Collector cut-off current
VBE = 0; VCE = 33 V
Second breakdown energy; L = 25 mH; f = 50 Hz
D.C. current gain(1)
IC = 8,5 A; VCE = 25 V
hFE
15 to 100
Collector-emitter saturation voltage(1)
IC = 20 A; IB = 4,0 A
VCEsat
typ.
1,6 V
−IE = 8,5 A; VCB = 25 V
fT
typ.
600 MHz
−IE = 20 A; VCB = 25 V
fT
typ.
600 MHz
Cc
typ.
275 pF
IC = 100 mA; VCE = 25 V
Cre
typ.
155 pF
Collector-flange capacitance
Ccf
typ.
3 pF
Transition frequency at f = 100
MHz(2)
Collector capacitance at f = 1 MHz
IE = Ie = 0; VCB = 25 V
Feedback capacitance at f = 1 MHz
Notes
1. Measured under pulse conditions: tp ≤ 300 µs; δ ≤ 0,02.
2. Measured under pulse conditions: tp ≤ 50 µs; δ ≤ 0,01.
August 1986
4
Philips Semiconductors
Product specification
VHF power transistor
BLV25
MGP296
80
MGP297
800
handbook, halfpage
handbook, halfpage
fT
(MHz)
hFE
typ
typ
40
400
0
0
10
0
20
IC (A)
0
Fig.4 VCE = 25 V; Tj = 25 °C.
MGP298
600
Cc
(pF)
typ
300
0
10
20
VCB (V)
30
Fig.6 IE = Ie = 0; f = 1 MHz; Tj = 25 °C.
August 1986
20
−IE (A)
30
Fig.5 VCB = 25 V; f = 100 MHz; Tj = 25 °C.
handbook, halfpage
0
10
5
Philips Semiconductors
Product specification
VHF power transistor
BLV25
APPLICATION INFORMATION
R.F. performance in narrow band c.w. operation (common-emitter class-B circuit) Th = 25 °C
f
MHz
VCE
V
PL
W
108
28
175
PS
W
Gp
dB
<
17,5
>
10,0
<
9,6
>
65
typ.
13,9
typ.
11,0
typ.
8,9
typ.
70
C12
handbook, full pagewidth
C4
C5
L2
L1
50 Ω
L7
L6
50 Ω
T.U.T.
C9
L5
C1
C2
η
%
IC
A
C13
C16
C15
C3
L3
C6
C7
L8
+VCC
R1
L4
C8
C10
C11
C14
L9
MGP299
Fig.7 Class-B test circuit at f = 108 MHz.
List of components
C1 = C3 = 7 to 100 pF film dielectric trimmer (cat. no. 2222 809 07015)
C2 = C4 = C5 = C6 = C7 = 100 pF (500 V) multilayer ceramic chip capacitor (ATC(1)); except for C2 these capacitors
are placed 7 mm from transistor edge
C8 = C10 = 470 pF multilayer ceramic chip capacitor (cat. no. 2222 856 13471)
C9 = C15 = 40 pF, parallel connection of 4 x 10 pF lead feed-through capacitors (cat. no. 2222 702 05109)
C11 = 100 nF multilayer ceramic chip capacitor (cat. no. 2222 852 59104)
C12 = C16 = 7 to 47 pF precision tuning capacitor (cat. no. 2222 805 00174)
C13 = 19 pF, parallel connection of 4 x 4,7 pF lead feed-through capacitors (cat. no. 2222 702 04478)
C14 = 6,8 µF/63 V electrolytic capacitor
L1 = Cu strip (10 mm × 4 mm × 0,5 mm)
L2 = strip on printed-circuit board
L3 = 7 turns closely wound enamelled Cu wire (0,3 mm); int. dia. 3,0 mm; leads 2 × 6 mm
L4 = L8 = L9 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)
L5 = 3 turns enamelled Cu wire (1,6 mm); int. dia. 8 mm; length 9 mm; leads 2 × 5 mm
L6 = Cu strip (27 mm × 9 mm × 0,5 mm)
L7 = 2 turns enamelled Cu wire (1,6 mm); int. dia. 8 mm; length 9 mm; leads 2 × 10 mm
L2 is strip on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric, thickness 1/16 in.
R1 = 10 Ω carbon resistor
Note
1. ATC means American Technical Ceramics.
August 1986
6
Philips Semiconductors
Product specification
VHF power transistor
BLV25
270
80
C8
C10
L4
L3
L1
L7
strip
strip
L8, L9
C15
C13
+VCC
R1
L5
C2
C11
strip
C4, C5
stop
stop
L6
L2
strip
C6, C7
C1
C3
C12
C16
C9
7 mm
MGP300
The circuit and the components are on one side of the epoxy fibre-glass board, the other side is unetched copper to serve as a
ground-plane. Earth connections are made by means of fixing screws. Additionally copper straps are used under the emitters and
at the input and output to provide direct contact between the copper on the component side and the ground-plane.
Fig.8 Component layout and printed-circuit board for 108 MHz class-B test circuit.
August 1986
7
Philips Semiconductors
Product specification
VHF power transistor
BLV25
MGP302
MGP301
200
250
handbook, halfpage
handbook, halfpage
PL
(W)
Th =
25 °C
PL
(W)
200
50 °C
70 °C
150
25 °C
100
50 °C
70 °C
100
50
0
1
10
0
102
VSWR
0
——— f > 1 MHz (continuous);
− − − − short time operation during mismatch (f > 1 MHz).
MGP303
30
η
handbook, halfpage
ri, xi
η
(%)
Gp
MGP304
1
80
(Ω)
60
0.5
8
40
0
4
20
−0.5
12
PS (W)
Fig.10 Load power as a function of source power.
16
Gp
(dB)
20
Test circuit tuned for each power level; typical values;
VCE = 28 V; f = 108 MHz; Th = 25 °C; class-B operation.
Fig.9 R.F. SOAR.
handbook, halfpage
10
ri
xi
0
0
100
200
PL (W)
−1
0
300
20
Test circuit tuned for each power level; typical values;
VCE = 28 V; f = 108 MHz; Th = 25 °C; class-B operation.
f (MHz)
120
Typical values; VCE = 28 V; PL = 175 W;
Th = 25 °C; class-B operation.
Fig.12 Input impedance (series components).
Fig.11 Power gain and efficiency as a function of
source power.
August 1986
70
8
Philips Semiconductors
Product specification
VHF power transistor
BLV25
MGP305
3
MGP306
20
handbook, halfpage
handbook, halfpage
RL, XL
(Ω)
RL
Gp
(dB)
2
10
1
XL
0
20
70
f (MHz)
0
20
120
Typical values; VCE = 28 V; PL = 175 W;
Th = 25 °C; class-B operation.
f (MHz)
120
Typical values; VCE = 28 V; PL = 175 W;
Th = 25 °C; class-B operation.
Fig.13 Load impedance (series components).
Fig.14 Power gain as a function of frequency.
OPERATING NOTE for Figs 12, 13 and 14:
Below 50 MHz a base-emitter resistor of 4,7 Ω is
recommended to avoid oscillation. This resistor must be
effective for r.f. only.
August 1986
70
9
Philips Semiconductors
Product specification
VHF power transistor
BLV25
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 6 leads
SOT119A
A
F
q
C
U1
B
H1
w2 M C
b2
2
H
c
4
6
p
U2
D1
U3
D
w1 M A B
A
1
3
5
b1
w3 M
b
Q
e
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
b1
b2
mm
7.39
6.32
5.59
5.33
5.34
5.08
4.07
3.81
inches
c
D
w2
w3
4.58
25.23 6.48 12.76
18.42
0.51
3.98
23.95 6.07 12.06
1.02
0.26
0.291 0.220 0.210 0.160 0.007 0.505 0.505
0.100 0.870 0.730 0.130 0.180
0.993 0.255 0.502
0.725
0.02
0.255
0.249 0.210 0.200 0.150 0.003 0.496 0.495
0.090 0.830 0.720 0.117 0.157
0.943 0.239 0.475
0.04
0.01
OUTLINE
VERSION
e
D1
0.18 12.86 12.83
6.48
0.07 12.59 12.57
F
H
JEDEC
EIAJ
SOT119A
August 1986
p
2.54 22.10 18.55 3.31
2.28 21.08 18.28 2.97
REFERENCES
IEC
H1
Q
q
U1
U2
U3
EUROPEAN
PROJECTION
w1
ISSUE DATE
97-06-28
10
Philips Semiconductors
Product specification
VHF power transistor
BLV25
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
August 1986
11