DISCRETE SEMICONDUCTORS DATA SHEET BLW90 UHF power transistor Product specification August 1986 Philips Semiconductors Product specification UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor suitable for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaranteed to withstand infinite VSWR at rated output power. High reliability is ensured by a gold sandwich metallization. BLW90 The transistor is housed in a 1⁄4" capstan envelope with a ceramic cap. All leads are isolated from the stud. QUICK REFERENCE DATA R.F. performance up to Th = 25 °C in an unneutralized common-emitter class-B circuit MODE OF OPERATION VCE V f MHz PL W Gp dB η % c.w. 28 470 4 > 11 > 55 PIN CONFIGURATION PINNING - SOT122A. PIN 4 handbook, halfpage 1 3 DESCRIPTION 1 collector 2 emitter 3 base 4 emitter 2 Top view MBK187 Fig.1 Simplified outline. SOT122A. PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged. August 1986 2 Philips Semiconductors Product specification UHF power transistor BLW90 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (peak value); VBE = 0 VCESM max. 60 V open base VCEO max. 30 V VEBO max. 4 V d.c. or average IC; IC(AV) max. 0,62 A (peak value); f > 1 MHz ICM max. 2,0 A Ptot max. 18,6 W Emitter-base voltage (open collector) Collector current Total power dissipation (d.c. and r.f.) up to Tmb = 25 °C Storage temperature Tstg Operating junction temperature Tj −65 to + 150 °C max. MGP660 1 MGP661 30 handbook, halfpage 200 °C handbook, halfpage Ptot Tmb = 25 °C IC (W) (A) Th = 70 °C 20 ΙΙ 10 10−1 1 10 VCE (V) Ι 0 102 0 50 Th (°C) 100 I Continuous d.c. and r.f. operation II Short-time operation during mismatch Fig.2 D.C. SOAR. Fig.3 Power derating curves vs. temperature. THERMAL RESISTANCE (dissipation = 6 W; Tmb = 73,6 °C, i.e. Th = 70 °C) From junction to mounting base (d.c. and r.f. dissipation) From mounting base to heatsink August 1986 3 Rth j-mb = 9,0 K/W Rth mb-h = 0,6 K/W Philips Semiconductors Product specification UHF power transistor BLW90 CHARACTERISTICS Tj = 25 °C Collector-emitter breakdown voltage V(BR)CES > 60 V V(BR)CEO > 30 V V(BR)EBO > 4 V ICES < 2 mA open base ESBO > 1 mJ RBE = 10 Ω ESBR > 1 mJ VBE = 0; IC = 4 mA Collector-emitter breakdown voltage open base; IC = 20 mA Emitter-base breakdown voltage open collector; IE = 2 mA Collector cut-off current VBE = 0; VCE = 30 V Second breakdown energy; L = 25 mH; f = 50 Hz D.C. current gain (1) hFE IC = 0,3 A; VCE = 5 V typ. 40 10 to 100 Collector-emitter saturation voltage (1) IC = 1,0 A; IB = 0,2 A VCEsat typ. 0,9 V −IE = 0,3 A; VCB = 28 V fT typ. 1,2 GHz −IE = 1,0 A; VCB = 28 V fT typ. 0,9 GHz Cc typ. 8,4 pF IC = 20 mA; VCE = 28 V Cre typ. 3,6 pF Collector-stud capacitance Ccs typ. 1,2 pF Transition frequency at f = 500 MHz (1) Collector capacitance at f = 1 MHz IE = Ie = 0; VCB = 28 V Feedback capacitance at f = 1 MHz Note 1. Measured under pulse conditions: tp ≤ 200 µs; δ ≤ 0,02. August 1986 4 Philips Semiconductors Product specification UHF power transistor BLW90 MGP663 MGP662 40 100 handbook, halfpage handbook, halfpage Cc (pF) hFE 30 75 VCE = 25 V 50 20 5V typ 10 25 0 0 0 0.5 1 IC (A) 0 1.5 Fig.4 Typical values; Tj = 25 °C. MGP664 2 fT (GHz) 1.5 typ 1 0.5 0 0.5 1 −IE (A) 1.5 Fig.6 VCB = 28 V; f = 500 MHz; Tj = 25 °C. August 1986 20 VCB (V) 30 Fig.5 IE = Ie = 0; f = 1 MHz; Tj = 25 °C. handbook, halfpage 0 10 5 Philips Semiconductors Product specification UHF power transistor BLW90 APPLICATION INFORMATION R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit); Th = 25 °C f (MHz) VCE (V) PL (W) PS (W) Gp (dB) 470 28 4 < 470 28 4 typ. 0,23 0,32 > 11 typ. 12,5 IC (A) < 0,26 typ. 0,25 C1 zi (Ω) ZL (Ω) > 55 1,7 + j1,8 8 + j26 typ. 58 − − C6 L6 L4 handbook, full pagewidth η (%) 50 Ω L1 50 Ω T.U.T. L2 C2 R1 L5 C5 L3 C3 C4 L7 R2 +VCC MGP665 Fig.7 Test circuit; c.w. class-B. List of components: C1 = C5 = C6 = 1,4 to 5,5 pF film dielectric trimmer (cat. no. 2222 809 09001) C2 = 2 to 9 pF film dielectric trimmer (cat. no. 2222 809 09002) C3 = 100 pF feed-through capacitor C4 = 100 nF polyester capacitor L1 = stripline (34,8 mm × 6,0 mm) L2 = 320 nH; 13 turns closely wound enamelled Cu wire (0,5 mm); int. dia. 4 mm; leads 2 × 4 mm L3 = L7 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640) L4 = stripline (12,0 mm × 6,0 mm) L5 = 265 nH; 13 turns closely wound enamelled Cu wire (0,35 mm); int. dia. 3,5 mm; leads 2 × 4 mm L6 = 29 nH; 3 turns closely wound enamelled Cu wire (1 mm); int. dia. 3,5 mm; leads 2 × 4 mm L1 and L4 are striplines on a double Cu-clad printed-circuit board with PTFE fibre-glass dielectric (εr = 2,74); thickness 1/16". R1 = 100 Ω carbon resistor R2 = 10 Ω carbon resistor Component layout and printed-circuit board for 470 MHz test circuit are shown in Fig.8. August 1986 6 Philips Semiconductors Product specification UHF power transistor BLW90 94 handbook, full pagewidth rivet 48 strap L7 L3 C3 C4 R1 L2 L5 R2 C1 C6 L6 L1 +VCC L4 strap C5 C2 MGP666 Fig.8 Component layout and printed-circuit board for 470 MHz test circuit. The circuit and the components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized to serve as earth. Earth connections are made by means of hollow rivets, whilst under the emitter leads Cu straps are used for a direct contact between upper and lower sheets. August 1986 7 Philips Semiconductors Product specification UHF power transistor BLW90 MGP667 MGP668 15 10 handbook, halfpage handbook, halfpage Gp Gp (dB) PL (W) 100 10 typ η (%) 5 η 50 5 0 0 0 0.5 PS (W) 0 1 Fig.9 VCE = 28 V; f = 470 MHz; Th = 25 °C. August 1986 5 PL (W) 0 10 Fig.10 Typical values; VCE = 28 V; f = 470 MHz; Th = 25 °C. 8 Philips Semiconductors Product specification UHF power transistor BLW90 MGP669 MGP670 5 50 handbook, halfpage handbook, halfpage ri, xi (dB) RL,XL 0 (Ω) XL ri 25 xi RL −5 200 300 400 f (MHz) 0 200 500 Typical values; VCE = 28 V; PL = 4 W; Th = 25 °C. 300 400 f (MHz) 500 Typical values; VCE = 28 V; PL = 4 W; Th = 25 °C. Fig.11 Input impedance (series components). Fig.12 Load impedance (series components). Ruggedness The BLW90 is capable of withstanding full load mismatch (VSWR = 50 through all phases) up to 4 W under the following conditions: MGP671 30 handbook, halfpage VCE = 28 V; f = 470 MHz; Th = 70 °C; Rth mb-h = 0,6 K/W. Gp (dB) 20 10 0 100 200 300 400 f (MHz) 500 Typical values; VCE = 28 V; PL = 4 W; Th = 25 °C. Fig.13 August 1986 9 Philips Semiconductors Product specification UHF power transistor BLW90 PACKAGE OUTLINE Studded ceramic package; 4 leads SOT122A D A ceramic BeO metal Q c N1 A D1 w1 M A D2 N M W N3 M1 X detail X H b α 4 L 3 H 1 2 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D1 D2 H L M1 M N N1 max. N3 Q W w1 α mm 5.97 4.74 5.85 5.58 0.18 0.14 7.50 7.23 6.48 6.22 7.24 6.93 27.56 25.78 9.91 9.14 3.18 2.66 1.66 1.39 11.82 11.04 1.02 3.86 2.92 3.38 2.74 8-32 UNC 0.381 90° OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-04-18 SOT122A August 1986 EUROPEAN PROJECTION 10 Philips Semiconductors Product specification UHF power transistor BLW90 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August 1986 11