DISCRETE SEMICONDUCTORS DATA SHEET BLV92 UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor BLV92 DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 900 MHz communications band. • multi-base structure and emitter-ballasting resistors for an optimum temperature profile • internal input matching to achieve an optimum wideband capability and high power gain • gold metallization ensures excellent reliability. The transistor has a 6-lead flange envelope with a ceramic cap (SOT-171). All leads are isolated from the flange. QUICK REFERENCE DATA R.F. performance at Th = 25 °C in a common-emitter class-B test circuit MODE OF OPERATION narrow band; c.w. ηC % VCE V f MHz PL W 12,5 900 4 > 7,5 > 50 9,6 900 3 typ. 7,3 typ. 56 GP dB PINNING - SOT171A PIN SYMBOL DESCRIPTION 1 e emitter 2 e emitter 3 b base 4 c collector handbook, halfpage 5 e emitter 6 e emitter 2 4 c 6 b 1 Top view 3 e 5 MAM141 Fig.1 Simplified outline and symbol. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. March 1993 2 Philips Semiconductors Product specification UHF power transistor BLV92 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-base voltage (open emitter) peak value VCBOM max. 36 V Collector-emitter voltage (open base) VCEO max. 16 V Emitter-base voltage (open collector) VEBO max. 3 V d.c. or average IC max. 0,8 A (peak value); f > 1 MHz ICM max. 2,4 A at Tmb = 94 °C Ptot(dc) max. 9 W at Tmb = 94 °C; f > 1 MHz Ptot(rf) max. 12 W Storage temperature Tstg −65 to + 150 °C Operating junction temperature Tj max. Collector current Total power dissipation 200 °C MDA408 10 MDA409 20 handbook, halfpage handbook, halfpage Ptot (W) 16 IC III (A) 12 II 1 Th = 90 °C I 8 4 10−1 1 10 VCE (V) 0 102 0 50 100 150 Th (°C) 200 I Continuous operation II Continuous operation (f > 1 MHz) III Short-time operation during mismatch; (f > 1 MHz) Rth mb-h = 0,4 K/W. Fig.2 D.C. SOAR. Fig.3 Power/temperature derating curves. THERMAL RESISTANCE Dissipation = 6 W; Tmb = 128 °C From junction to mounting base (d.c. dissipation) Rth j-mb(dc) max. (r.f. dissipation) Rth j-mb(rf) max. 9 K/W Rth mb-h max. 0,4 K/W From mounting base to heatsink March 1993 3 12 K/W Philips Semiconductors Product specification UHF power transistor BLV92 CHARACTERISTICS Tj = 25 °C unless otherwise specified Collector-base breakdown voltage, open emitter; IC = 10 mA V(BR)CBO > 36 V Collector-emitter breakdown voltage, open base; IC = 20 mA V(BR)CEO > 16 V Emitter-base breakdown voltage, open collector; IE = 1 mA V(BR)EBO > 3 V Collector cut-off current, VBE = 0; VCE = 16 V ICES < 5 mA Second breakdown energy, L = 25 mH; f = 50 Hz; RBE = 10 Ω ESBR > 1 mJ D.C. current gain, IC = 0,6 A; VCE = 10 V hFE > Transition frequency at f = 500 MHz(1), −IE = 0,6 A; VCE = 12,5 V 25 fT typ. 4 GHz Collector capacitance at f = 1 MHz, IE = ie = 0; VCB = 12,5 V Cc typ. 8 pF Feed-back capacitance at f = 1 MHz, IC = 0; VCE = 12,5 V Cre typ. 5 pF Collector-flange capacitance Ccf typ. 2 pF Note 1. Measured under pulse conditions: tp = 50 µs; δ < 1%. MDA410 100 MDA411 5 handbook, halfpage handbook, halfpage fT hFE (GHz) 12.5 V 80 4 VCE = 10 V 60 3 40 2 20 1 0 0 0 0.4 0.8 1.2 1.6 IC (A) 0 2 −0.8 −1.2 −1.6 −2 IE (A) Fig.4 Tj = 25 °C; typical values. March 1993 −0.4 Fig.5 4 VCB = 12,5 V; f = 500 MHz; Tj = 25 °C; typical values. Philips Semiconductors Product specification UHF power transistor BLV92 MDA412 16 handbook, halfpage Cc (pF) 12 8 4 0 0 4 8 12 VCB (V) 16 Fig.6 IE = ie = 0; f = 1 MHz; typical values. APPLICATION INFORMATION R.F. performance in c.w. operation (common-emitter circuit; class-B): f = 900 MHz; Th = 25 °C. MODE OF OPERATION narrow band; c.w. handbook, full pagewidth VCE V PL W 12,5 4 9,6 3 50 Ω GP dB < 0,71 > typ. 0,57 typ. 0,56 L1 < 0,64 > typ. 8,5 typ. 0,56 typ. 57 typ. 7,3 typ. 0,56 typ. 56 7,5 C2 C3 C6 T.U.T. L4 L3 L2 C4 L5 C8 L6 C12 L7 C7 L8 ηC % IC A ,,,,,, ,,,,,,, ,,,,,, ,,,,,,, C5 C1 PS W C9 C10 50 Ω C11 L9 C13 L11 R1 L10 R2 C14 +VCC C15 MDA413 Fig.7 Class-B test circuit at f = 900 MHz. March 1993 5 50 Philips Semiconductors Product specification UHF power transistor BLV92 List of components: C1 = C12 = 33 pF multilayer ceramic chip capacitor C2 = C3 = C10 = C11 = 1,4 to 5,5 pF film dielectric trimmer (cat. no. 2222 809 09001) C4 = C5 = 3,9 pF multilayer ceramic chip capacitor(1) C6 = C7 = C8 = C9 = 6,2 pF multilayer ceramic chip capacitor(1) C13 = 10 pF ceramic feed-through capacitor C14 = 6,8 µF (63 V) electrolytic capacitor C15 = 330 pF ceramic feed-through capacitor L1 = 50 Ω stripline (29,5 mm × 2,4 mm) L2 = 50 Ω stripline (5,5 mm × 2,4 mm) L3 = 42,7 Ω stripline (16,8 mm × 3,0 mm) L4 = 42,7 Ω stripline (7,5 mm × 3,0 mm) L5 = 42,7 Ω stripline (2,0 mm × 3,0 mm) L6 = 50 Ω stripline (8,5 mm × 2,4 mm) L7 = 50 Ω stripline (28,0 mm × 2,4 mm) L8 = 60 nH; 4 turns closely wound enamelled Cu-wire (0,4 mm); int. dia. 3 mm; leads 2 × 5 mm L9 = 45 nH; 4 turns enamelled Cu-wire (1,0 mm); length 6 mm; int. dia. 4 mm; leads 2 × 5 mm L10 = L11 = Ferroxcube wideband h.f. choke, grade 3B (cat. no. 4312 020 36642) R1 = R2 = 10 Ω ± 10%; 0,25 W, metal film resistor L1 to L7 are striplines on a double Cu-clad printed circuit board with P.T.F.E. fibre-glass dielectric (εr = 2,2); thickness 1⁄32 inch. Note 1. American Technical Ceramics capacitors type 100A or capacitor of same quality. March 1993 6 Philips Semiconductors Product specification UHF power transistor BLV92 128 mm handbook, full pagewidth copper straps 80 mm +VCC C15 L10 C14 R2 R1 L8 L9 C5 L4 C1 L1 C3 C3 C13 C8 C6 L3 C12 L6 C4 L11 C7 L5 L7 C9 C10 C11 L2 MDA414 The circuit and the components are on one side of the P.T.F.E. fibre-glass board; the other side is unetched copper serving as ground plane. Earth connections are made by fixing screws and copper straps around the board and under the emitters to provide a direct contact between the copper on the component side and the ground plane. Fig.8 Printed circuit board and component lay-out for 900 MHz class-B test circuit. March 1993 7 Philips Semiconductors Product specification UHF power transistor BLV92 MDA415 5 MDA416 10 Gp handbook, halfpage handbook, halfpage PL (dB) 8 (W) 4 100 ηC (%) 80 Gp 60 3 6 2 4 40 1 2 20 0 ηC 0 0 0 0.4 0.8 1.2 PS (W) 1.6 0 1 2 3 4 5 PL (W) VCE = 9,6 V; f = 900 MHz; Th = 25 °C; class-B operation; typical values. VCE = 9,6 V; f = 900 MHz; Th = 25 °C; class-B operation; typical values. Fig.9 Load power vs. source power. Fig.10 Power gain and efficiency vs. load power. MDA417 8 MDA418 10 Gp 100 ηC handbook, halfpage handbook, halfpage PL (W) (%) (dB) 8 80 6 Gp 6 60 ηC 4 4 40 2 20 2 0 0 0 0.4 0.8 1.2 VCE = 12,5 V; f = 900 MHz; Th = 25 °C; class-B operation; typical values. 2 4 6 PL (W) 8 VCE = 12,5 V; f = 900 MHz; Th = 25 °C; class-B operation; typical values. Fig.11 Load power vs. source power. March 1993 0 0 1.6 2 PS (W) Fig.12 Power gain and efficiency vs. load power. 8 Philips Semiconductors Product specification UHF power transistor BLV92 RUGGEDNESS The device is capable of withstanding a full load mismatch (VSWR = 50; all phases) at rated load power up to a supply voltage of 15,5 V and at Th = 25 °C. MDA419 8 handbook, halfpage Zi (Ω) ri 6 4 2 xi 0 800 840 880 920 960 1000 f (MHz) VCE = 12,5 V; PL = 4 W; f = 800−960 MHz; Th = 25 °C; class-B operation; typical values. Fig.13 Input impedance (series components). MDA420 12 MDA421 10 Gp handbook, halfpage handbook, halfpage ZL (Ω) (dB) 8 9 RL 6 6 4 XL 3 2 0 800 840 880 920 0 800 960 1000 f (MHz) VCE = 12,5 V; PL = 4 W; f = 800−960 MHz; Th = 25 °C; class-B operation; typical values. 900 950 1000 f (MHz) VCE = 12,5 V; PL = 4 W; f = 800−960 MHz; Th = 25 °C; class-B operation; typical values. Fig.14 Load impedance (series components). March 1993 850 Fig.15 Power gain vs. frequency. 9 Philips Semiconductors Product specification UHF power transistor BLV92 PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 6 leads SOT171A D A F D1 U1 B q C w2 M C H1 c b1 2 H 4 6 E1 U2 1 A 3 5 E w1 M A B p Q w3 M b e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b b1 c D D1 E E1 e mm 6.81 6.07 2.15 1.85 3.20 2.89 0.16 0.07 9.25 9.04 9.30 8.99 5.95 5.74 6.00 5.70 3.58 inches w1 w2 w3 0.51 1.02 0.26 0.268 0.085 0.126 0.006 0.364 0.366 0.234 0.236 0.120 0.445 0.365 0.135 0.170 0.980 0.236 0.725 0.02 0.140 0.239 0.073 0.114 0.003 0.356 0.354 0.226 0.224 0.100 0.415 0.355 0.125 0.162 0.970 0.224 0.04 0.01 OUTLINE VERSION F JEDEC EIAJ SOT171A March 1993 H1 3.05 11.31 9.27 2.54 10.54 9.01 REFERENCES IEC H p 3.43 3.17 Q q U1 U2 4.32 24.90 6.00 18.42 4.11 24.63 5.70 EUROPEAN PROJECTION ISSUE DATE 97-06-28 10 Philips Semiconductors Product specification UHF power transistor BLV92 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. March 1993 11