PHILIPS BLW87

DISCRETE SEMICONDUCTORS
DATA SHEET
BLW87
VHF power transistor
Product specification
August 1986
Philips Semiconductors
Product specification
VHF power transistor
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for use in class-A,
B and C operated mobile h.f. and
v.h.f. transmitters with a nominal
supply voltage of 13,5 V. The
transistor is resistance stabilized and
is guaranteed to withstand severe
load mismatch conditions with a
supply over-voltage to 16,5 V.
BLW87
It has a 3/8" flange envelope with a
ceramic cap. All leads are isolated
from the flange.
QUICK REFERENCE DATA
R.F. performance up to Th = 25 °C in an unneutralized common-emitter class-B circuit
MODE OF OPERATION
VCE
V
f
MHz
PL
W
Gp
dB
η
%
zi
Ω
YL
mS
c.w.
13,5
175
25
>6
> 70
1,6 + j1,4
210 + j5,5
PIN CONFIGURATION
PINNING - SOT123
PIN
halfpage
1
4
c
DESCRIPTION
1
collector
2
emitter
3
base
4
emitter
handbook, halfpage
b
e
MBB012
2
3
MSB057
Fig.1 Simplified outline and symbol.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
August 1986
2
Philips Semiconductors
Product specification
VHF power transistor
BLW87
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (VBE = 0)
peak value
VCESM
max.
36 V
Collector-emitter voltage (open base)
VCEO
max.
18 V
Emitter-base voltage (open collector)
VEBO
max.
4 V
Collector current (average)
IC(AV)
max.
6 A
Collector current (peak value); f > 1 MHz
ICM
max.
12 A
R.F. power dissipation (f > 1 MHz); Tmb = 25 °C
Prf
max.
76 W
Storage temperature
Tstg
−65 to + 150 °C
Operating junction temperature
Tj
max.
MGP650
MGP649
10
200 °C
100
handbook, halfpage
handbook, halfpage
IC
Prf
(A)
(W)
Tmb = 25 °C
Th = 70 °C
short-time
operation
during mismatch
continuous
r.f. operation
derate by
0.42 W/K
50
continuous
d.c. operation
derate by
0.32 W/K
1
1
10
VCE (V)
0
102
0
Fig.2 D.C. SOAR.
Fig.3
50
100
Th (°C)
150
R.F. power dissipation; VCE ≤ 16,5 V; f ≥ 1 MHz.
THERMAL RESISTANCE
(dissipation = 20 W; Tmb = 76 °C; i.e. Th = 70 °C)
From junction to mounting base (d.c. dissipation)
Rth j-mb(dc)
=
3,0 K/W
From junction to mounting base (r.f. dissipation)
Rth j-mb(rf)
=
2,25 K/W
From mounting base to heatsink
Rth mb-h
=
0,3 K/W
August 1986
3
Philips Semiconductors
Product specification
VHF power transistor
BLW87
CHARACTERISTICS
Tj = 25 °C
Collector-emitter breakdown voltage
V(BR) CES
>
36 V
V(BR) CEO
>
18 V
V(BR)EBO
>
4 V
ICES
<
10 mA
open base
ESBO
>
8 mJ
RBE = 10 Ω
ESBR
>
8 mJ
VBE = 0; IC = 25 mA
Collector-emitter breakdown voltage
open base; IC = 50 mA
Emitter-base breakdown voltage
open collector; IE = 10 mA
Collector cut-off current
VBE = 0; VCE = 18 V
Second breakdown energy; L = 25 mH; f = 50 Hz
D.C. current
gain(1)
typ.
IC = 2,5 A; VCE = 5 V
hFE
50
10 to 80
Collector-emitter saturation voltage(1)
IC = 7,5 A; IB = 1,5 A
VCEsat
typ.
1,7 V
−IE = 2,5 A; VCB = 13,5 V
fT
typ.
800 MHz
−IE = 7,5 A; VCB = 13,5 V
fT
typ.
750 MHz
Cc
typ.
65 pF
IC = 100 mA; VCE = 15 V
Cre
typ.
41 pF
Collector-flange capacitance
Ccf
typ.
2 pF
Transition frequency at f = 100
MHz(1)
Collector capacitance at f = 1 MHz
IE = Ie = 0; VCB = 15 V
Feedback capacitance at f = 1 MHz
Note
1. Measured under pulse conditions: tp ≤ 200 µs; δ ≤ 0,02.
August 1986
4
Philips Semiconductors
Product specification
VHF power transistor
BLW87
MGP651
75
hFE
MGP652
200
typical values Tj = 25 °C
handbook, halfpage
handbook, halfpage
VCE = 13.5 V
IE = Ie = 0
f = 1 MHz
Cc
(pF)
5V
50
100
typ
25
0
0
5
10
IC (A)
0
15
0
10
20
VCB (V)
Fig.5 Tj = 25 °C.
Fig.4
MGP653
1000
handbook, full pagewidth
VCB = 13.5 V
f = 100 MHz
Tj = 25 °C
typ
fT
(MHz)
500
0
0
5
10
Fig.6
August 1986
5
−IE (A)
15
Philips Semiconductors
Product specification
VHF power transistor
BLW87
APPLICATION INFORMATION
R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit); Th = 25 °C
f (MHz)
VCE (V)
PL (W)
PS (W)
GP (dB)
IC (A)
η (%)
175
13,5
25
< 6,25
>
< 2,64
>
175
12,5
25
−
handbook, full pagewidth
6
L1
50 Ω
1,6 + j1,4
210 + j5,5
−
−
C6a
C7
L7
50 Ω
L4
C6b
T.U.T.
C2
YL (mS)
typ. 75
,,
,, ,,
L5
C3a
C1
−
typ. 6,6
70
zi (Ω)
C3b
L2
C8
L6
C4
C5
R1
R2
L3
L8
+VCC
MGP604
Fig.7 Test circuit; c.w. class-B.
List of components:
C1
=
2,5 to 20 pF film dielectric trimmer (cat. no. 2222 809 07004)
C2
=
C8 = 4 to 40 pF film dielectric trimmer (cat. no. 2222 809 07008)
C3a =
C3b = 47 pF ceramic capacitor (500 V)
C4
=
120 pF ceramic capacitor (500 V)
C5
=
100 nF polyester capacitor
C6a =
C6b = 8,2 pF ceramic capacitor (500 V)
C7
=
5 to 60 pF film dielectric trimmer (cat. no. 2222 809 07011)
L1
=
1 turn Cu wire (1,6 mm); int. dia. 9,0 mm; leads 2 × 5 mm
L2
=
100 nH; 7 turns closely wound enamelled Cu wire (0,5 mm); int. dia. 3 mm; leads 2 × 5 mm
L3
=
L8 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)
L4
=
L5 = strip (12 mm × 6 mm); taps for C3a and C3b at 5 mm from transistor
L6
=
2 turns Cu wire (1,6 mm); int. dia. 5,0 mm; length 6,0 mm; leads 2 × 5 mm
L7
=
2 turns Cu wire (1,6 mm); int. dia. 4,5 mm; length 6,0 mm; leads 2 × 5 mm
L4 and L5 are strips on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric, thickness 1/16".
R1
=
10 Ω (± 10%) carbon resistor (0,25 W)
R2
=
4,7 Ω (± 5%) carbon resistor (0,25 W)
Component layout and printed-circuit board for 175 MHz test circuit are shown in Fig.8.
August 1986
6
Philips Semiconductors
Product specification
VHF power transistor
BLW87
150
handbook, full pagewidth
72
1888MJK
L3
L8
+VCC
C4
R1
L2
C1
C2
C5
C3a
L6
R2
C6a
L5
L1
C7
L4
C8
L7
C6b
C3b
1888MJK
rivet
MGP605
Fig.8 Component layout and printed-circuit board for 175 MHz test circuit.
The circuit and the components are situated on one side of the epoxy fibre-glass board, the other side being fully
metallized to serve as earth. Earth connections are made by means of hollow rivets, whilst under the emitter leads Cu
straps are used for a direct contact between upper and lower sheets.
August 1986
7
Philips Semiconductors
Product specification
VHF power transistor
BLW87
MGP654
50
handbook, halfpage
typical values
f = 175 MHz
PL
(W)
MGP655
15
VCE = 13.5 V
handbook, halfpage
VCE = 12.5 V
Gp
(dB)
typical values
f = 175 MHz
Th = 25 °C
VCE = 13.5 V
VCE = 12.5 V
150
η
(%)
Th = 25 °C
10
25
100
Gp
Th = 70 °C
η
5
50
0
0
0
5
10
PS (W)
0
15
Fig.9
PL (W)
0
40
Fig.10
The transistor has been developed for use with
unstabilized supply voltages. As the output power and
drive power increase with the supply voltage, the nominal
output power must be derated in accordance with the
graph for safe operation at supply voltages other than the
nominal. The graph shows the permissible output power
under nominal conditions (VSWR = 1), as a function of the
expected supply over-voltage ratio with VSWR as
parameter.
MGP656
30
handbook, halfpage
VSWR = 20
PLnom
(W)
(VSWR = 1)
20
50
20
The graph applies to the situation in which the drive
(PS/PSnom) increases linearly with supply over-voltage
ratio.
10
PS
PSnom
0
1
1.1
1.2
VCE
1.3
VCEnom
Fig.11 R.F. SOAR (short-time operation during
mismatch); f = 175 MHz; Th = 70 °C;
Rth mb-h = 0,3 K/W; VCEnom = 13,5 V or 12,5 V;
PS = PSnom at VCEnom and VSWR =1;
measured in the circuit of Fig.7.
August 1986
8
Philips Semiconductors
Product specification
VHF power transistor
BLW87
OPERATING NOTE
Below 50 MHz a base-emitter resistor of 10 Ω is
recommended to avoid oscillation. This resistor must be
effective for r.f. only.
MGP657
5
input impedance (series components)
versus frequency (class-B operation)
handbook, halfpage
ri, xi
(Ω)
ri
ri
xi
0
xi
−5
0
200
100
f (MHz)
300
Typical values; VCE = 13,5 V; PL = 25 W; Th = 25 °C.
Fig.12
MGP658
10
handbook, halfpage
load impedance (parallel components)
versus frequency (class-B operation)
RL
(Ω)
MGP659
500
20
power gain versus frequency
(class-B operation)
handbook, halfpage
Gp
(dB)
CL
(pF)
15
0
10
RL
CL
5
RL
5
CL
0
0
100
200
f (MHz)
−500
300
0
0
Typical values; VCE = 13,5 V; PL = 25 W; Th = 25 °C.
f (MHz)
Typical values; VCE = 13,5 V; PL = 25 W; Th = 25 °C.
Fig.13
August 1986
200
100
Fig.14
9
300
Philips Semiconductors
Product specification
VHF power transistor
BLW87
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 4 leads
SOT123A
D
A
F
q
C
B
U1
w2 M C
c
H
b
L
4
3
α
A
p
U3
U2
w1 M A B
1
2
H
Q
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
D
D1
F
H
L
p
Q
q
U1
U2
U3
w1
w2
mm
7.47
6.37
5.82
5.56
0.18
0.10
9.73
9.47
9.63
9.42
2.72
2.31
20.71
19.93
5.61
5.16
3.33
3.04
4.63
4.11
18.42
25.15
24.38
6.61
6.09
9.78
9.39
0.51
1.02
inches
0.294
0.251
0.229 0.007
0.219 0.004
0.182
0.725
0.162
0.99
0.96
0.26
0.24
0.385
0.370
0.02
0.04
OUTLINE
VERSION
0.383 0.397 0.107 0.815
0.373 0.371 0.091 0.785
0.221 0.131
0.203 0.120
REFERENCES
IEC
JEDEC
EIAJ
SOT123A
August 1986
α
45°
EUROPEAN
PROJECTION
ISSUE DATE
97-06-28
10
Philips Semiconductors
Product specification
VHF power transistor
BLW87
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
August 1986
11