ETC BLW96/B

DISCRETE SEMICONDUCTORS
DATA SHEET
BLW96
HF/VHF power transistor
Product specification
File under Discrete Semiconductors, SC08a
August 1986
Philips Semiconductors
Product specification
HF/VHF power transistor
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for use in class-A,
AB and B operated high power
industrial and military transmitting
equipment in the h.f. and v.h.f. band.
The transistor presents excellent
performance as a linear amplifier in
s.s.b. applications. It is resistance
stabilized and is guaranteed to
withstand severe load mismatch
BLW96
conditions. Transistors are supplied
in matched hFE groups.
The transistor has a 1⁄2" flange
envelope with a ceramic cap. All
leads are isolated from the flange.
QUICK REFERENCE DATA
R.F. performance up to Th = 25 °C
MODE OF
OPERATION
VCE
V
f
MHz
s.s.b. (class-AB)
50
1,6 − 28
c.w. (class-B)
50
108
s.s.b. (class-A)
40
28
PL
W
η
%
Gp
dB
25 − 200 (P.E.P.) >
200
typ.
50 (P.E.P.) typ.
13,5 >
d3
dB
40(1) <
−
−30 <
−
6,5 typ. 67
19
d5
dB
IC(ZS)
(IC)
A
−30
−
typ. −40 <
0,1
(6)
−40
(4)
Note
1. ηdt at 200 W P.E.P.
PIN CONFIGURATION
PINNING - SOT121B.
PIN
handbook, halfpage 1
2
4
DESCRIPTION
1
collector
2
emitter
3
base
4
emitter
3
MLA876
Fig.1 Simplified outline. SOT121B.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
August 1986
2
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW96
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (VBE = 0)
peak value
VCESM
max.
110 V
Collector-emitter voltage (open base)
VCEO
max.
55 V
Emitter-base voltage (open collector)
VEBO
max.
4 V
Collector current (average)
IC(AV)
max.
12 A
Collector current (peak value); f > 1 MHz
ICM
max.
40 A
R.F. power dissipation (f > 1 MHz); Tmb = 45 °C
Prf
max.
340 W
Storage temperature
Tstg
−65 to + 150 °C
Operating junction temperature
Tj
max.
MGP686
MGP685
102
handbook, halfpage
200 °C
400
handbook, halfpage
Ptot
(W)
IC
ΙΙΙ
300
(A)
10
derate by
1.58 W/K
Ι
1.35 W/K
200
Tmb = 45 °C
Th = 70 °C
ΙΙ
100
1
10
0
VCE (V)
102
0
50
100
Th (°C)
150
I Continuous d.c. operation
II Continuous r.f. operation; f > 1 MHz
III Short-time operation during mismatch; f > 1 MHz
Fig.2 D.C. SOAR.
Fig.3 Power/temperature derating curves.
THERMAL RESISTANCE
(dissipation = 150 W; Tmb = 100 °C, i.e. Th = 70 °C)
From junction to mounting base (d.c. dissipation)
Rth j-mb(dc)
=
0,63 K/W
From junction to mounting base (r.f. dissipation)
Rth j-mb(rf)
=
0,45 K/W
From mounting base to heatsink
Rth mb-h
=
0,2 K/W
August 1986
3
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW96
CHARACTERISTICS
Tj = 25 °C
Collector-emitter breakdown voltage
V(BR)CES
>
110 V
V(BR)CEO
>
55 V
V(BR)EBO
>
4 V
ICES
<
10 mA
open base
ESBO
>
20 mJ
RBE = 10 Ω
ESBR
>
20 mJ
hFE
typ.
15 to
30
50
hFE1/hFE2
≤
1,2
VCEsat
typ.
1,9 V
−IE = 7 A; VCB = 45 V
fT
typ.
235 MHz
−IE = 20 A; VCB = 45 V
fT
typ.
245 MHz
Cc
typ.
280 pF
IC = 150 mA; VCE = 50 V
Cre
typ.
170 pF
Collecting-flange capacitance
Ccf
typ.
4,4 pF
VBE = 0; IC = 50 mA
Collector-emitter breakdown voltage
open base; IC = 200 mA
Emitter-base breakdown voltage
open collector; IE = 20 mA
Collector cut-off current
VBE = 0; VCE = 55 V
Second breakdown energy; L = 25 mH; f = 50 Hz
D.C. current
gain(1)
IC = 7 A; VCE = 5 V
D.C. current gain ratio of matched devices(1)
IC = 7 A; VCE = 5 V
Collector-emitter saturation voltage(1)
IC = 20 A; IB = 4 A
Transition frequency at f = 100
MHz(2)
Collector capacitance at f = 1 MHz
IE = Ie = 0; VCB = 50 V
Feedback capacitance at f = 1 MHz
Notes
1. Measured under pulse conditions: tp ≤ 300 µs; δ ≤ 0,02.
2. Measured under pulse conditions: tp ≤ 50 µs; δ ≤ 0,01.
August 1986
4
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW96
MGP688
MGP687
10
50
handbook, halfpage
handbook, halfpage
hFE
−IE
(A)
VCE = 45 V
40
Th = 70 °C
1
25 °C
15 V
30
5V
20
10−1
10
10−2
500
0
750
1000
VBE (mV)
1250
0
10
20
IC (A)
30
Fig.5 Typical values; Tj = 25 °C.
Fig.4 Typical values; VCE = 40 V.
MGP689
MGP690
300
1000
handbook, halfpage
handbook, halfpage
fT
Cc
(pF)
VCB = 45 V
(MHz)
15 V
200
750
5V
500
typ
100
250
0
0
0
10
20
−IE (A)
30
0
Fig.6 Typical values; f = 100 MHz; Tj = 25 °C.
August 1986
25
50
VCB (V)
75
Fig.7 IE = Ie = 0; f = 1 MHz; Tj = 25 °C.
5
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW96
APPLICATION INFORMATION
R.F. performance in s.s.b. class-AB operation (linear power amplifier)
VCE = 50 V; Th = 25 °C; f1 = 28,000 MHz; f2 = 28,001 MHz
ηdt (%)
OUTPUT POWER
Gp
W
dB
25 to 200 (P.E.P.)
> 13,5
d3 (1)
d5(1)
IC(ZS)
dB
dB
A
< −30
< −30
0,1
IC (A)
at 200 W (P.E.P.)
> 40
< 5,0
C10
handbook, full pagewidth
L4
C1
50 Ω
L1
50 Ω
C11
R1
T.U.T.
C2
C3
L2
C4
C6
R2
L3
C12
C13
C14
C5
C7
temperature
compensated bias
(Ri < 0.1 Ω)
C8
C9
+VCC
MGP691
Fig.8 Test circuit; s.s.b. class-AB.
List of components:
C1 = C4 = C10 = C14 = 100 pF film dielectric trimmer
C2 = 27 pF ceramic capacitor (500 V)
C3 = 270 pF polysterene capacitor (630 V)
C5 = C7 = C8 = 220 nF multilayer ceramic chip capacitor
C6 = 27 pF multilayer ceramic chip capacitor (500 V; ATC(2))
C9 = 47 µF/63 V electrolytic capacitor
C11 = 2 × 36 pF multilayer ceramic chip capacitors (500 V; ATC(2)) in parallel
C12 = 2 × 43 pF multilayer ceramic chip capacitors (500 V; ATC(2)) in parallel
C13 = 43 pF multilayer ceramic chip capacitor (500 V; ATC(2))
L1 = 88 nH; 3 turns Cu wire (1,0 mm); int. dia. 9,0 mm; length 6,1 mm; leads 2 × 5 mm
L2 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)
L3 = 150 nH; 5 turns Cu wire (2,0 mm); int. dia. 10,0 mm; length 18,7 mm; leads 2 × 5 mm
L4 = 197 nH; 5 turns Cu wire (2,0 mm); int. dia. 12,0 mm; length 18,6 mm; leads 2 × 5 mm
R1 = 0,66 Ω; parallel connection of 5 × 3,3 Ω metal film resistors (PR37; ± 5%; 1,6 W each)
R2 = 27 Ω carbon resistor (± 5%; 0,5 W)
Notes
1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones.
Relative to the according peak envelope powers these figures should be increased by 6 dB.
2. ATC means American Technical Ceramics.
August 1986
6
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW96
MGP692
−25
MGP693
20
100
handbook, halfpage
handbook, halfpage
ηdt
Gp
(dB)
(%)
d3, d5
(dB)
Gp
75
−35
15
10
50
d3
ηdt
25
5
d5
−45
0
0
100
200
P.E.P. (W)
300
0
100
200
P.E.P. (W)
0
300
VCE = 50 V; IC(ZS) = 0,1 A; f1 = 28,000 MHz;
f2 = 28,001 MHz; Th = 25 °C; typical values.
VCE = 50 V; IC(ZS) = 0,1 A; f1 = 28,000 MHz;
f2 = 28,001 MHz; Th = 25 °C; typical values.
Fig.9
Fig.10 Double-tone efficiency and power gain as a
function of output power.
Intermodulation distortion as a function of
output power.(1)
Ruggedness
The BLW96 is capable of withstanding full load mismatch
(VSWR = 50 through all phases) up to 150 W (P.E.P.) or a
load mismatch (VSWR = 5 through all phases) up to
200 W (P.E.P.) under the following conditions:
VCE = 45 V; f = 28 MHz; Th = 70 °C; Rth mb-h = 0,2 K/W.
August 1986
7
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW96
MGP694
30
MGP695
4
handbook, halfpage
andbook, halfpage
ri, −xi
Gp
ri
(Ω)
(dB)
3
20
−xi
2
10
ri
1
−xi
0
1
10
f (MHz)
0
102
1
VCE = 50 V; IC(ZS) = 0,1 A; PL = 200 W (P.E.P.);
Th = 25 °C; ZL = 5 Ω; neutralizing capacitor: 47 pF
f (MHz)
102
VCE = 50 V; IC(ZS) = 0,1 A; PL = 200 W (P.E.P.);
Th = 25 °C; ZL = 5 Ω; neutralizing capacitor: 47 pF
Fig.12 Input impedance (series components) as a
function of frequency.
Fig.11 Power gain as a function of frequency.
Figs 11 and 12 are typical curves and hold for one
transistor of a push-pull amplifier with cross-neutralization
in s.s.b. class-AB operation.
August 1986
10
8
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW96
R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit)
Th = 25 °C
f (MHz)
VCE (V)
PL (W)
PS (W)
Gp (dB)
IC (A)
η (%)
108
50
200
typ. 45
typ. 6,5
typ. 6
typ. 67
MGP696
MGP697
400
10
handbook, halfpage
100
handbook, halfpage
PL
η
(%)
Gp
(dB)
(W)
300
7.5
75
Gp
η
typ
200
5
50
100
2.5
25
0
0
0
25
50
PS (W)
75
0
Fig.13 VCE = 50 V; f = 108 MHz; Th = 25 °C.
August 1986
100
200
PL (W)
0
300
Fig.14 VCE = 50 V; f = 108 MHz; Th = 25 °C;
typical values.
9
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW96
MGP698
1
MGP699
6
handbook, halfpage
handbook, halfpage
ri, xi
(Ω)
RL, XL
(Ω)
0.5
RL
4
ri
XL
0
−0.5
25
xi
2
75
f (MHz)
0
25
125
Typical values; VCE = 50 V; PL = 200 W; Th = 25 °C;
class-B operation
MGP700
20
Gp
(dB)
10
f (MHz)
125
Typical values; VCE = 50 V; PL = 200 W; Th = 25 °C;
class-B operation
Fig.17
August 1986
125
Fig.16 Load impedance (series components).
handbook, halfpage
75
f (MHz)
Typical values; VCE = 50 V; PL = 200 W; Th = 25 °C;
class-B operation
Fig.15 Input impedance (series components).
0
25
75
10
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW96
R.F. performance in s.s.b. class-A operation (linear power amplifier)
VCE = 40 V; Th = 25 °C; f1 = 28,000 MHz; f2 = 28,001 MHz
OUTPUT POWER
W
Gp
dB
IC
A
d3(1)
dB
d5(1)
dB
typ. 50 (P.E.P.)
typ. 19
4
typ. −40
< −40
C9
handbook, full pagewidth
L4
C1
50 Ω
50 Ω
C10
L1
T.U.T.
C2
L2
L3
R1
C7
C8
MGP701
C3
C5
C4
+VBB
C6
+VCC
Fig.18 Test circuit; s.s.b. class-A.
List of components:
C1 = C2 = 10 to 780 pF film dielectric trimmer
C3 = 220 nF polyester capacitor (100 V)
C4 = 100 µF/4 V electrolytic capacitor
C5 = 2 × 330 nF polyester capacitors (100 V) in parallel
C6 = 47 µF/63 V electrolytic capacitor
C7 = C10 = 2 × 82 pF ceramic capacitors (500 V) in parallel
C8 = C9 = 10 to 150 pF air dielectric trimmer
L1 = 45 nH; 2 turns enamelled Cu wire (1,6 mm); int. dia. 8,0 mm; length 4,0 mm; leads 2 × 3 mm
L2 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)
L3 = 110 nH; 4 turns enamelled Cu wire (2,0 mm); int. dia. 10,0 mm; length 8,0 mm; leads 2 × 2 mm
L4 = 210 nH; 5 turns enamelled Cu wire (2,0 mm); int. dia. 12,0 mm; length 10,0 mm; leads 2 × 2 mm
R1 = 27 Ω carbon resistor (± 5%; 0,5 W)
Note
1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones.
Relative to the according peak envelope powers these figures should be increased by 6 dB.
August 1986
11
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW96
MGP702
−30
handbook, full pagewidth
d3
(dB)
IC = 3 A
4A
5A
−40
−50
−60
0
20
40
60
80
P.E.P. (W)
100
Fig.19 Third order intermodulation distortion as a function of output power.(1) Typical values; VCE = 40 V;
Th = 25 °C; f1 = 28,000 MHz; f2 = 28,001 MHz.
August 1986
12
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW96
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 4 leads
SOT121B
D
A
F
q
C
B
U1
c
H
b
L
4
α
w2 M C
3
A
D1
U2
p
U3
w1 M A B
1
2
H
Q
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
mm
7.27
6.17
5.82
5.56
0.16
0.10
inches
0.286
0.243
0.229 0.006
0.219 0.004
OUTLINE
VERSION
D
D1
12.86 12.83
12.59 12.57
F
H
L
p
Q
q
U1
U2
U3
w1
w2
2.67
2.41
28.45
25.52
7.93
6.32
3.30
3.05
4.45
3.91
18.42
24.90
24.63
6.48
6.22
12.32
12.06
0.51
1.02
0.175
0.725
0.154
0.98
0.97
0.255
0.245
0.485
0.475
0.02
0.04
0.506 0.505 0.105 1.120
0.496 0.495 0.095 1.005
45°
0.312 0.130
0.249 0.120
REFERENCES
IEC
JEDEC
EIAJ
SOT121B
August 1986
α
EUROPEAN
PROJECTION
ISSUE DATE
97-06-28
13
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW96
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
August 1986
14