DISCRETE SEMICONDUCTORS DATA SHEET BLU97 UHF power transistor Product specification File under Discrete Semiconductors, SC08b August 1986 Philips Semiconductors Product specification UHF power transistor BLU97 DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 470 MHz band. • multi-base structure and emitter-ballasting resistors for an optimum temperature profile. The transistor has a 4-lead stud envelope with a ceramic cap (SOT122A). All leads are isolated from the stud. • gold metallization ensures excellent reliability. QUICK REFERENCE DATA R.F. performance up to Th = 25 °C in a common-emitter class-B circuit MODE OF OPERATION VCE V f MHz PL W Gp dB ηC % narrow band; c.w. 12,5 470 7 > 8,5 > 55 PIN CONFIGURATION PINNING - SOT122A. PIN 4 handbook, halfpage 1 3 DESCRIPTION 1 collector 2 emitter 3 base 4 emitter 2 Top view MBK187 Fig.1 Simplified outline. SOT122A. PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged. August 1986 2 Philips Semiconductors Product specification UHF power transistor BLU97 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-base voltage (open emitter) VCBO max. 36 V Collector-emitter voltage (open base) VCEO max. 16 V Emitter-base voltage (open collector) VEBO max. 3 V d.c. or average IC max. 1,2 A (peak value); f > 1 MHz ICM max. 3,6 A at Tmb = 52 °C Ptot(d.c.) max. 17 W f > 1 MHz; Tmb = 52 °C 22,5 W Collector current Total power dissipation Ptot(r.f.) max. Storage temperature Tstg −65 to +150 °C Operating junction temperature Tj max. MDA360 10 200 °C MDA361 40 handbook, halfpage handbook, halfpage III Ptot (W) IC (A) 30 II Tmb = 52 °C 1 20 Th = 70 °C I 10 10−1 1 10 VCE (V) 0 102 0 40 80 120 Th (°C) 160 I Continuous operation II Continuous operation (f > 1 MHz). III Short-time operation during mismatch (f > 1 MHz). Rth mb-h = 0,6 K/W. Fig.2 D.C. SOAR. Fig.3 Power/temperature derating curves. THERMAL RESISTANCE Dissipation = 15 W; Tmb = 25 °C From junction to mounting base (d.c. dissipation) Rth j-mb(dc) = 7,5 K/W (r.f. dissipation) Rth j-mb(rf) = 5,6 K/W Rth mb-h = 0.6 K/W From mounting base to heatsink August 1986 3 Philips Semiconductors Product specification UHF power transistor BLU97 CHARACTERISTICS Tj = 25 °C unless otherwise specified Collector-base breakdown voltage, open emitter; IC = 15 mA V(BR)CBO > 36 V Collector-emitter breakdown voltage, open base; IC = 30 mA V(BR)CEO > 16 V Emitter-base breakdown voltage, open collector; IE = 1,5 mA V(BR)EBO > 3 V Collector cut-off current, VBE = 0; VCE = 16 V ICES < 7,5 mA Second breakdown energy, L = 25 mH; f = 50 Hz; RBE = 10 Ω ESBR > 2,3 mJ D.C. current gain, IC = 0,9 A; VCE = 10 V hFE > 25 typ. 100 Transition frequency at f = 500 MHz(1), −IE = 0,9 A; VCB = 12,5 V fT typ. 4,0 GHz Collector capacitance at f = 1 MHz, IE = ie = 0; VCB = 12,5 V Cc typ. 10 pF Feed-back capacitance at f = 1 MHz, IC = 0; VCE = 12,5 V Cre typ. 7 pF Collector-stud capacitance Ccs typ. 1,2 pF Note 1. Measured under pulse conditions: tp = 50 µs; δ < 1%. MDA362 120 handbook, halfpage hFE fT (GHz) 80 3.2 40 1.6 0 0 0.8 1.6 2.4 IC (A) 0 3.2 0 Fig.4 Tj = 25 °C; VCE = 10 V; typical values. August 1986 MDA363 4.8 handbook, halfpage Fig.5 4 0.8 1.6 2.4 −IE (A) 3.2 VCB = 12,5 V; f = 500 MHz; tp = 50 µs; Tj = 25 °C; typical values. Philips Semiconductors Product specification UHF power transistor BLU97 MDA364 20 Cc handbook, halfpage (pF) 16 12 8 4 0 4 0 8 12 16 20 VCB (V) Fig.6 IE = ie = 0; f = 1 MHz; typical values. APPLICATION INFORMATION R.F. performance in common-emitter circuit; class-B: f = 470 MHz; Th = 25 °C MODE OF OPERATION VCE V PL W narrow band; c.w. 12,5 7 C1 handbook, full pagewidth PS W Gp dB < 0,99 > typ. 0,55 typ. ,, ,, L1 50 Ω C2 C4 C3 L3 ,, L6 T.U.T. 8,5 < 1,0 > 55 11,0 typ. 0,8 typ. 70 C8 L7 50 Ω C7 L5 L2 C5 C6 R2 R1 L4 +VCC Fig.7 Class-B test circuit at f = 470 MHz. August 1986 5 ηC % IC A MDA365 Philips Semiconductors Product specification UHF power transistor BLU97 List of components: C1 = 2,7 pF multilayer ceramic chip capacitor(1) C2 = C7 = C8 = 1,4 to 5,5 pF film dielectric trimmer (cat. no. 2222 809 09001) C3 = 7,5 pF multilayer ceramic chip capacitor(1) C4 = 2 to 9 pF film dielectric trimmer (cat. no. 2222 809 09002) C5 = 100 pF multilayer ceramic chip capacitor C6 = 100 nF metallized film capacitor L1 = 38 Ω stripline (22,5 mm × 6,0 mm) L2 = 15 nH; 1 turn Cu wire (1,0 mm); int. dia. 5 mm; leads 2 × 5 mm L3 = L4 = Ferroxcube wideband h.f. choke, grade 3B (cat. no. 4312 020 36642) L5 = 29 nH; 2 turns enamelled Cu wire (1,0 mm); int. dia. 6 mm; length 3,5 mm; leads 2 × 5 mm L6 = 38 Ω stripline (10,0 mm × 6,0 mm) L7 = 7 nH; 1/2 turn Cu wire (1,0 mm); int. dia. 5,0 mm; leads 2 × 5 mm R1 = R2 = 10 Ω ± 10%; 0,25 W metal film resistor L1 and L6 are striplines on a double Cu-clad printed circuit board with P.T.F.E. fibre-glass dielectric (εr = 2,74); thickness 1⁄16 inch. Note 1. American Technical Ceramics capacitor type 100A or capacitor of same quality. August 1986 6 Philips Semiconductors Product specification UHF power transistor BLU97 100 mm handbook, full pagewidth 58 mm rivets L3 R1 L2 C1 C3 L7 L1 C2 L6 C8 L5 L4 C4 C6 C5 C7 +VCC R2 MDA366 The circuit and the components are on one side of the P.T.F.E. fibre-glass board; the other side is unetched copper serving as ground plane. Earth connections are made by hollow rivets and also by copper straps under the emitters. Fig.8 Printed circuit board and component lay-out for 470 MHz class-B test circuit. August 1986 7 Philips Semiconductors Product specification UHF power transistor BLU97 MDA367 (W) 8 20 Gp (dB) 16 6 12 10 PL MDA368 handbook, halfpage handbook, halfpage 100 ηC (%) 80 ηC 60 Gp 4 8 40 2 4 20 0 0 0 0 0.4 0.8 PS (W) 0 1.2 4 6 8 10 PL (W) VCE = 12,5 V; f = 470 MHz; Th = 25 °C; class-B operation; typical values. VCE = 12,5 V; f = 470 MHz; Th = 25 °C; class-B operation; typical values. Fig.9 Load power vs. source power. Fig.10 Power gain and efficiency vs. load power. RUGGEDNESS The device is capable of withstanding a full load mismatch (VSWR = 50; all phases) at rated load power up to a supply voltage of 15,5 V and Th = 25 °C. August 1986 2 8 Philips Semiconductors Product specification UHF power transistor BLU97 MDA369 3 MDA370 8 handbook, halfpage handbook, halfpage Zi (Ω) ZL (Ω) ri 2 RL 6 xi 1 4 0 2 XL −1 400 440 480 520 0 400 560 600 f (MHz) VCE = 12,5 V; PL = 7 W; f = 400-520 MHz; Th = 25 °C; class-B operation; typical values. MDA371 Gp (dB) 12 8 4 440 480 520 560 600 f (MHz) VCE = 12,5 V; PL = 7 W; f = 400-520 MHz; Th = 25 °C; class-B operation; typical values. Fig.13 Power gain vs. frequency. August 1986 520 560 600 f (MHz) Fig.12 Load impedance (series components). handbook, halfpage 0 400 480 VCE = 12,5 V; PL = 7 W; f = 400-520 MHz; Th = 25 °C; class-B operation; typical values. Fig.11 Input impedance (series components). 16 440 9 Philips Semiconductors Product specification UHF power transistor BLU97 PACKAGE OUTLINE Studded ceramic package; 4 leads SOT122A D A ceramic BeO metal Q c N1 A D1 w1 M A D2 N M W N3 M1 X detail X H b α 4 L 3 H 1 2 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D1 D2 H L M1 M N N1 max. N3 Q W w1 α mm 5.97 4.74 5.85 5.58 0.18 0.14 7.50 7.23 6.48 6.22 7.24 6.93 27.56 25.78 9.91 9.14 3.18 2.66 1.66 1.39 11.82 11.04 1.02 3.86 2.92 3.38 2.74 8-32 UNC 0.381 90° OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-04-18 SOT122A August 1986 EUROPEAN PROJECTION 10 Philips Semiconductors Product specification UHF power transistor BLU97 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August 1986 11