PHILIPS BLW86

DISCRETE SEMICONDUCTORS
DATA SHEET
BLW86
HF/VHF power transistor
Product specification
August 1986
Philips Semiconductors
Product specification
HF/VHF power transistor
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for use in class-A,
AB and B operated h.f. and v.h.f.
transmitters with a nominal supply
voltage of 28 V. The transistor is
resistance stabilized and is
guaranteed to withstand severe load
mismatch conditions. Matched
hFE groups are available on request.
BLW86
It has a 3/8" flange envelope with a
ceramic cap. All leads are isolated
from the flange.
QUICK REFERENCE DATA
R.F. performance up to Th = 25 °C
MODE OF
OPERATION
VCE
V
f
MHz
PL
W
η
%
Gp
dB
>
7,5
>
YL
mS
0,7 + j1,3 110 − j62
d3
dB
−
c.w. (class-B)
28
175
45
s.s.b. (class-AB)
28
1,6 − 28
5−47,5 (P.E.P.)
typ. 19
typ. 45
−
−
typ. −30
s.s.b. (class-A)
26
1,6 − 28
17 (P.E.P.)
typ. 22
−
−
−
typ. −42
PIN CONFIGURATION
70
zi
Ω
PINNING - SOT123
PIN
halfpage
1
4
c
DESCRIPTION
1
collector
2
emitter
3
base
4
emitter
handbook, halfpage
b
e
MBB012
2
3
MSB057
Fig.1 Simplified outline and symbol.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
August 1986
2
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW86
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (VBE = 0)
peak value
VCESM
max.
65 V
Collector-emitter voltage (open base)
VCEO
max.
36 V
Emitter-base voltage (open-collector)
VEBO
max.
4 V
Collector current (average)
IC(AV)
max.
4 A
Collector current (peak value); f > 1 MHz
ICM
max.
12 A
R.F. power dissipation (f > 1 MHz); Tmb = 25 °C
Prf
max.
105 W
Storage temperature
Tstg
Operating junction temperature
Tj
MGP630
10
−65 to + 150 °C
max.
200 °C
MGP631
150
handbook, halfpage
handbook, halfpage
Prf
(W)
IC
(A)
100
ΙΙΙ
derate by 0.58 W/K
ΙΙ
Th = 70 °C
0.43 W/K
Tmb = 25 °C
50
Ι
1
10
VCE (V)
0
102
0
50
Th (°C)
100
I Continuous d.c. operation
II Continuous r.f. operation
III Short-time operation during mismatch
Fig.3 R.F. power dissipation; VCE ≤ 28 V; f > 1 MHz.
Fig.2 D.C. SOAR.
THERMAL RESISTANCE
(dissipation = 45 W; Tmb = 83,5 °C, i.e. Th = 70 °C)
From junction to mounting base (d.c. dissipation)
Rth j-mb(dc)
=
2,65 K/W
From junction to mounting base (r.f. dissipation)
Rth j-mb(rf)
=
1,95 K/W
From mounting base to heatsink
Rth mb-h
=
0,3 K/W
August 1986
3
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW86
CHARACTERISTICS
Tj = 25 °C unless otherwise specified
Collector-emitter breakdown voltage
V(BR)CES
>
65 V
V(BR)CEO
>
36 V
V(BR)EBO
>
4 V
ICES
<
10 mA
open base
ESBO
>
8 mJ
RBE = 10 Ω
ESBR
>
8 mJ
VBE = 0; IC = 25 mA
Collector-emitter breakdown voltage
open base; IC = 100 mA
Emitter-base breakdown voltage
open collector; IE = 10 mA
Collector cut-off current
VBE = 0; VCE = 36 V
Second breakdown energy; L = 25 mH; f = 50 Hz
D.C. current
gain(1)
IC = 2,5 A; VCE = 5 V
hFE
typ.
45
10 to 80
D.C. current gain ratio of matched devices(1)
hFE1/hFE2
<
1,2
VCEsat
typ.
1,5 V
−IE = 2,5 A; VCB = 28 V
fT
typ.
570 MHz
−IE = 7,5 A; VCB = 28 V
fT
typ.
570 MHz
Cc
typ.
82 pF
IC = 100 mA; VCE = 28 V
Cre
typ.
54 pF
Collector-flange capacitance
Ccf
typ.
2 pF
IC = 2,5 A; VCE = 5 V
Collector-emitter saturation voltage(1)
IC = 7,5 A; IB = 1,5 A
Transition frequency at f = 100
MHz(1)
Collector capacitance at f = 1 MHz
IE = Ie = 0; VCB = 28 V
Feedback capacitance at f = 1 MHz
Note
MGP632
4
1. Measured under pulse
conditions: tp ≤ 200 µs; δ ≤ 0,02.
handbook, halfpage
IC
(A)
2
Fig.4
August 1986
Typical values;
VCE = 28 V.
4
0
0.5
Th = 70 °C
1
25 °C
VBE (V)
1.5
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW86
MGP633
MGP634
300
100
handbook, halfpage
handbook, halfpage
Cc
(pF)
hFE
VCE = 28 V
200
50
5V
100
0
typ
0
0
5
10
IC (A)
15
0
Fig.5 Typical values; Tj = 25 °C.
20
VCB (V)
40
Fig.6 IE = Ie = 0; f = 1 MHz; Tj = 25 °C.
MGP635
1000
handbook, full pagewidth
fT
(MHz)
VCB = 28 V
500
15 V
0
0
5
10
Fig.7 Typical values; f = 100 MHz; Tj = 25 °C.
August 1986
5
−IE (A)
15
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW86
APPLICATION INFORMATION
R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit); Th = 25 °C
f (MHz)
VCE (V)
PL (W)
PS (W)
GP (dB)
IC (A)
η (%)
zi (Ω)
YL (mS)
175
28
45
<8
> 7,5
< 2,47
> 70
0,7 + j1,3
110 − j62
handbook, full pagewidth
,,
,, ,,
L5
C3a
C1
L1
50 Ω
C7
50 Ω
L4
C6b
T.U.T.
C2
C6a
L7
C3b
L2
C8
L6
C4
C5
R1
R2
L3
L8
+VCC
MGP604
Fig.8 Test circuit; c.w. class-B.
List of components:
C1 = C7 = 2,5 to 20 pF film dielectric trimmer (cat. no. 2222 809 07004)
C2 = 5 to 60 pF film dielectric trimmer (cat. no. 2222 809 07011)
C3a = C3b = 47 pF ceramic capacitor (500 V)
C4 = 120 pF ceramic capacitor
C5 = 100 nF polyester capacitor
C6a = 2,2 pF ceramic capacitor (500 V)
C6b = 1,8 pF ceramic capacitor (500 V)
C8 = 4 to 40 pF film dielectric trimmer (cat. no. 2222 809 07008)
L1 = 14 nH; 1 turn Cu wire (1,6 mm); int. dia. 7,7 mm; leads 2 × 5 mm
L2 = 100 nH; 7 turns closely wound enamelled Cu wire (0,5 mm); int. dia. 3 mm; leads 2 × 5 mm
L3 = L8 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)
L4 = L5 = strip (12 mm × 6 mm); taps for C3a and C3b at 5 mm from transistor
L6 = 80 nH; 3 turns Cu wire (1,6 mm); int. dia. 9,0 mm; length 8,0 mm; leads 2 × 5 mm
L7 = 62 nH; 3 turns Cu wire (1,6 mm); int. dia. 7,5 mm; length 8,1 mm; leads 2 × 5 mm
L4 and L5 are strips on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric, thickness 1/6".
R1 = R2 = 10 Ω carbon resistor
Component layout and printed-circuit board for 175 MHz test circuit see Fig.9.
August 1986
6
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW86
150
handbook, full pagewidth
72
1888MJK
L3
L8
+VCC
C4
R1
L2
C1
C2
C5
C3a
L6
R2
C6a
L5
L1
C7
L4
C8
L7
C6b
C3b
1888MJK
rivet
MGP605
Fig.9 Component layout and printed-circuit board for 175 MHz test circuit.
The circuit and the components are situated on one side of the epoxy fibre-glass board, the other side being fully
metallized to serve as earth. Earth connections are made by means of hollow rivets, whilst under the emitter leads Cu
straps are used for a direct contact between upper and lower sheets.
To minimize the dielectric losses, the ground plane under the interconnection of L7 and C7 has been removed.
August 1986
7
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW86
MGP637
MGP636
75
PL
(W)
100
10
handbook, halfpage
handbook, halfpage
Th = 25 °C
70 °C
Gp
(dB)
η
(%)
Gp
50
η
5
50
25
0
0
0
10
0
20
PS (W)
Fig.10 Typical values; VCE = 28 V; f = 175 MHz.
handbook, halfpage
PLnom
(W)
(VSWR = 1)
Th = 50 °C
50
70 °C
90 °C
0
1
10
VSWR
102
The graph shows the permissible output power under
nominal conditions (VSWR = 1) as a function of the
expected VSWR during short-time mismatch
conditions with heatsink temperatures as parameter.
Fig.12 R.F. SOAR; c.w. class-B operation;
f = 175 MHz; VCE = 28 V; Rth mb-h = 0,3 K/W
August 1986
50
PL (W)
0
75
Fig.11 Typical values; VCE = 28 V; f = 175 MHz;
− − − Th = 25 °C;  Th = 70 °C.
MGP638
100
25
8
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW86
MGP639
2.5
MGP640
10
handbook, halfpage
handbook, halfpage
RL
RL
xi
CL
RL
ri, xi
(Ω)
CL
(pF)
(Ω)
ri
0
ri
CL
5
0
−250
xi
−2.5
0
0
100
200
f (MHz)
300
0
Typical values; VCE = 28 V; PL = 45 W; Th = 25 °C.
100
200
f (MHz)
−500
300
Typical values; VCE = 28 V; PL = 45 W; Th = 25 °C.
Fig.13 Input impedance (series components).
Fig.14 Load impedance (parallel components).
OPERATING NOTE
Below 75 MHz a base-emitter resistor of 10 Ω is
recommended to avoid oscillation. This resistor must be
effective for r.f. only.
MGP641
25
Gp
handbook, halfpage
(dB)
20
15
10
5
0
0
100
200
f (MHz)
300
Typical values; VCE = 28 V; PL = 45 W; Th = 25 °C.
Fig.15 Power gain versus frequency.
August 1986
9
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW86
R.F. performance in s.s.b. class-AB operation (linear power amplifier)
VCE = 28 V; f1 = 28,000; f2 = 28,001 MHz.
GP
dB
ηdt (%)
at 47,5 W
IC (A)
(P.E.P.)
d3
dB(1)
d5
dB(1)
IC(ZS)
mA
Th
°C
5 to 47,5 (P.E.P.)
typ. 19
typ. 45
typ. 1,9
typ. −30
< −30
50
25
5 to 42,5 (P.E.P.)
typ. 19
−
−
typ. −30
< −30
50
70
OUTPUT POWER
W
Note
1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones.
Relative to the according peak envelope powers these figures should be increased by 6 dB.
L4
handbook, full pagewidth
C1
50 Ω
C7
50 Ω
L1
R1
T.U.T.
C4
C8
L3
C2
R2
L2
temperature
compensated bias
+VCC
C5
C3
C6
MGP642
Fig.16 Test circuit; s.s.b. class-AB.
List of components:
C1 = C2 = 10 to 780 pF film dielectric trimmer
C3 = C5 = C6 = 220 nF polyester capacitor
C4 = 56 pF ceramic capacitor (500 V)
C7 = C8 = 15 to 575 pF film dielectric trimmer
L1 = 4 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 7,0 mm; leads 2 × 5 mm
L2 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)
L3 = 4 turns enamelled Cu wire (1,6 mm); int. dia. 10 mm; length 9,4 mm; leads 2 × 5 mm
L4 = 7 turns enamelled Cu wire (1,6 mm); int. dia. 12 mm; length 17,2 mm; leads 2 × 5 mm
R1 =1,2 Ω; parallel connection of 4 × 4,7 Ω carbon resistors
R2 = 39 Ω carbon resistor
August 1986
10
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW86
MGP643
−20
ηdt
d3, d5
d3
−30
−40
−50
Gp
90 °C
70 °C
50 °C
25 °C
20
Gp
(dB)
(%)
Th =
(dB)
MGP644
50
handbook, halfpage
handbook, halfpage
40
15
ηdt
30
10
20
5
d5
10
0
25
P.E.P. (W)
0
50
50
25
P.E.P. (W)
0
75
VCE = 28 V; IC(ZS) = 50 mA; f1 = 28,000 MHz;
f2 = 28,001 MHz; typical values.
VCE = 28 V; IC(ZS) = 50 mA; f1 = 28,000 MHz;
f2 = 28,001 MHz; Th = 25 °C; typical values.
Fig.17 Intermodulation distortion as a function of
output power.(1)
Fig.18 Double-tone efficiency and power gain as a
function of output power.
MGP645
30
MGP646
20
handbook, halfpage
handbook, halfpage
Gp
(dB)
ri, xi
(Ω)
20
10
ri
10
0
xi
0
1
10
f (MHz)
−10
102
VCE = 28 V; IC(ZS) = 50 mA; PL = 47,5 W;
Th = 25 °C; ZL = 6,4 Ω.
1
10
f (MHz)
102
VCE = 28 V; IC(ZS) = 50 mA; PL = 47,5 W;
Th = 25 °C; ZL = 6,4 Ω.
Fig.19 Power gain as a function of frequency.
Fig.20 Input impedance (series components) as a
function of frequency.
Figs 19 and 20 are typical curves and hold for an
unneutralized amplifier in s.s.b. class-AB operation.
August 1986
11
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW86
Ruggedness in s.s.b. operation
The BLW86 is capable of withstanding a load mismatch (VSWR = 50) under the following conditions: class-AB operation;
f1 = 28,000 MHz; f2 = 28,001 MHz; VCE = 28 V; Th = 70 °C and PLnom = 50 W P.E.P.
R.F. performance in s.s.b. class-A operation (linear power amplifier)
VCE = 26 V; f1 = 28,000 MHz; f2 = 28,001 MHz
OUTPUT POWER
W
GP
dB
IC
A
d3
dB(1)
d5
dB(1)
Th
°C
17 (P.E.P.)
typ. 22
1,7
typ. −40
< −40
70
17 (P.E.P.)
typ. 22
1,7
typ. −42
< −40
25
Note
1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones.
Relative to the according peak envelope powers these figures should be increased by 6 dB.
handbook, full pagewidth
L5
C1
L1
50 Ω
C10
50 Ω
R3
T.U.T.
C11
C5
R4
C2
L4
L3
C7
C6
R7
C8
C3
C4
L2
R5
R8
+VCC
R9
BY206
BD204
R6
R1
MGP647
R2
Fig.21 Test circuit; s.s.b. class-A.
August 1986
C9
12
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW86
List of components in Fig.21:
C1 = C2 = 10 to 780 pF film dielectric trimmer
C3 = 22 nF ceramic capacitor (63 V)
C4 = 47 µF/10 V electrolytic capacitor
C5 = 56 pF ceramic capacitor (500 V)
C6 = 47 µF/35 V electrolytic capacitor
C7 = C8 = 220 nF polyester capacitor
C9 = 10 µF/35 V electrolytic capacitor
C10 = 10 to 210 pF film dielectric trimmer
C11 = 15 to 575 pF film dielectric trimmer
L1 = 3 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 9,0 mm; leads 2 × 5 mm
L2 = L3 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)
L4 = 11 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 11,0 mm
L5 = 14 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 11,0 mm
R1 = 600 Ω; parallel connection of 2 × 1,2 kΩ carbon resistors (±5%; 0,5 W each)
R2 = 15 Ω carbon resistor (±5%; 0,25 W)
R3 = 1,2 Ω; parallel connection of 4 × 4,7 Ω carbon resistors (±5%; 0,125 W each)
R4 = 33 Ω carbon resistor (±5%; 0,25 W)
R5 = 18 Ω carbon resistor (±5%; 0,25 W)
R6 = 120 Ω wirewound resistor (±5%; 5,5 W)
R7 =
1 Ω carbon resistor (±5%; 0,125 W)
R8 = 47 Ω wirewound potentiometer (3 W)
R9 = 1,57 Ω; parallel connection of 3 × 4,7 Ω wirewound resistors (±5%; 5,5 W each)
MGP648
−20
handbook, halfpage
d3
(dB)
−30
IC = 1.4 A
1.55 A
1.7 A
−40
−50
−60
0
10
20
P.E.P. (W)
30
Fig.22 Intermodulation distortion as a function of output power. Typical values; VCE = 26 V; Th = 70 °C;
f1 = 28,000 MHz; f2 = 28,001 MHz.
August 1986
13
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW86
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 4 leads
SOT123A
D
A
F
q
C
B
U1
w2 M C
c
H
b
L
4
3
α
A
p
U3
U2
w1 M A B
1
2
H
Q
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
D
D1
F
H
L
p
Q
q
U1
U2
U3
w1
w2
mm
7.47
6.37
5.82
5.56
0.18
0.10
9.73
9.47
9.63
9.42
2.72
2.31
20.71
19.93
5.61
5.16
3.33
3.04
4.63
4.11
18.42
25.15
24.38
6.61
6.09
9.78
9.39
0.51
1.02
inches
0.294
0.251
0.229 0.007
0.219 0.004
0.182
0.725
0.162
0.99
0.96
0.26
0.24
0.385
0.370
0.02
0.04
OUTLINE
VERSION
0.383 0.397 0.107 0.815
0.373 0.371 0.091 0.785
0.221 0.131
0.203 0.120
REFERENCES
IEC
JEDEC
EIAJ
SOT123A
August 1986
α
45°
EUROPEAN
PROJECTION
ISSUE DATE
97-06-28
14
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW86
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
August 1986
15