DISCRETE SEMICONDUCTORS DATA SHEET BLF147 VHF power MOS transistor Product specification Supersedes data of September 1992 2001 May 23 Philips Semiconductors Product specification VHF power MOS transistor FEATURES BLF147 PIN CONFIGURATION • High power gain • Low intermodulation distortion • Easy power control ook, halfpage 4 3 • Good thermal stability • Withstands full load mismatch. d DESCRIPTION g Silicon N-channel enhancement mode vertical D-MOS transistor designed for industrial and military applications in the HF/VHF frequency range. MBB072 1 2 MLA876 The transistor is encapsulated in a 4-lead, SOT121 flange envelope, with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to 'General' section for further information. s Fig.1 Simplified outline and symbol. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. WARNING PINNING - SOT121 PIN Product and environmental safety - toxic materials DESCRIPTION 1 drain 2 source 3 gate 4 source This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit. MODE OF OPERATION SSB, class-AB CW, class-B 2001 May 23 VDS (V) PL (W) 28 28 150 (PEP) 108 28 150 f (MHz) 2 ηD (%) d3 (dB) d5 (dB) > 17 > 35 < −30 < −30 typ. 14 typ. 70 − − Gp (dB) Philips Semiconductors Product specification VHF power MOS transistor BLF147 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 65 V ±VGS gate-source voltage − 20 V ID DC drain current Ptot total power dissipation Tstg Tj − 25 A − 220 W storage temperature −65 150 °C junction temperature − 200 °C up to Tmb = 25 °C THERMAL RESISTANCE SYMBOL PARAMETER THERMAL RESISTANCE Rth j-mb thermal resistance from junction to mounting base 0.8 K/W Rth mb-h thermal resistance from mounting base to heatsink 0.2 K/W MRA904 102 handbook, halfpage MGP049 300 handbook, halfpage Ptot ID (A) (W) (1) 200 (1) (2) (2) 10 100 1 1 10 VDS (V) 0 102 0 (1) Current is this area may be limited by RDS(on). (2) Tmb = 25 °C. 100 Th (°C) 150 (1) Short-time operation during mismatch. (2) Continuous operation. Fig.2 DC SOAR. 2001 May 23 50 Fig.3 Power/temperature derating curves. 3 Philips Semiconductors Product specification VHF power MOS transistor BLF147 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage ID = 100 mA; VGS = 0 65 − − V IDSS drain-source leakage current VGS = 0; VDS = 28 V − − 5 mA IGSS gate-source leakage current ±VGS = 20 V; VDS = 0 − − 1 µA VGS(th) gate-source threshold voltage ID = 200 mA; VDS = 10 V 2 − 4.5 V ∆VGS gate-source voltage difference of matched pairs ID = 100 mA; VDS = 10 V − − 100 mV gfs forward transconductance ID = 8 A; VDS = 10 V 5 7.5 − S RDS(on) drain-source on-state resistance ID = 8 A; VGS = 10 V − 0.1 0.15 Ω IDSX on-state drain current VGS = 10 V; VDS = 10 V − 37 − A Cis input capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 450 − pF Cos output capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 360 − pF Crs feedback capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 55 − pF MGP050 MGP051 60 0 handbook, halfpage handbook, halfpage T.C. (mV/K) ID (A) −1 40 −2 −3 20 −4 −5 10−2 0 10−1 1 ID (A) 0 10 VDS = 28 V; valid for Th = 25 to 70 °C. Fig.4 10 15 VGS (V) 20 VDS = 10 V. Fig.5 Temperature coefficient of gate-source voltage as a function of drain current, typical values. 2001 May 23 5 4 Drain current as a function of gate-source voltage, typical values. Philips Semiconductors Product specification VHF power MOS transistor BLF147 MGP052 170 MRA903 1400 handbook, halfpage handbook, halfpage C (pF) RDS (on) (mΩ) 150 1200 130 800 110 400 Cis Cos 0 90 0 50 100 0 150 Tj (°C) 10 VGS = 0; f = 1 MHz. Fig.6 Fig.7 Drain-source on-state resistance as a function of junction temperature, typical values. MRA902 handbook, halfpage Crs (pF) 400 300 200 100 0 0 10 20 30 40 VDS (V) VGS = 0; f = 1 MHz. Fig.8 Feedback capacitance as a function of drain-source voltage, typical values. 2001 May 23 30 40 VDS (V) ID = 8 A; VGS = 10 V. 500 20 5 Input and output capacitance as functions of drain-source voltage, typical values. Philips Semiconductors Product specification VHF power MOS transistor BLF147 APPLICATION INFORMATION FOR CLASS-AB OPERATION Th = 25 °C; Rth mb-h = 0.2 K/W; RGS = 9.8 Ω; unless otherwise specified. RF performance in SSB operation in a common source class-AB circuit. f1 = 28.000 MHz; f2 = 28.001 MHz. PL (W) 20 to 150 (PEP) f (MHz) VDS (V) IDQ (A) Gp (dB) ηD (%) d3 (dB) (note 2) d5 (dB) (note 2) 28 28 1 > 17 typ. 19 > 35 typ. 40 < −30 typ. −34 < −30 typ. −40 Notes 1. Optimum load impedance: 2.1 + j0 Ω. 2. Stated figures are maximum values encountered at any driving level between the specified value of PEP and are referred to the according level of either the equal amplified tones. Related to the according peak envelope power these figures should be decreased by 6 dB. Ruggedness in class-AB operation The BLF147 is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases under the following conditions: VDS = 28 V; f = 28 MHz at rated load power. MGP053 MGP054 60 30 handbook, halfpage handbook, halfpage ηD (%) Gp (dB) 40 20 20 0 10 100 0 PL (W) PEP 0 200 100 PL (W) PEP 200 Class-AB operation; VDS = 28 V; IDQ = 1 A; RGS = 9.8 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz. Class-AB operation; VDS = 28 V; IDQ = 1 A; RGS = 9.8 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz. Fig.9 Fig.10 Efficiency as a function of load power, typical values. Gain as a function of load power, typical values. 2001 May 23 6 Philips Semiconductors Product specification VHF power MOS transistor BLF147 MGP055 −20 MGP056 −20 handbook, halfpage handbook, halfpage d3 (dB) d5 (dB) −30 −30 −40 −40 −50 −50 −60 −60 0 100 200 PL (W) PEP 0 100 PL (W) PEP 200 Class-AB operation; VDS = 28 V; IDQ = 1 A; RGS = 9.8 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz. Class-AB operation; VDS = 28 V; IDQ = 1 A; RGS = 9.8 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz. Fig.11 Third order intermodulation distortion as a function of load power, typical values. Fig.12 Fifth order intermodulation distortion as a function of load power, typical values. handbook, full pagewidth C8 C1 C2 C10 L7 C9 C3 R1 R2 C11 L4 C5 R5 C6 R3 R4 L5 +VG L6 C7 +VD MGP057 f = 28 MHz. Fig.13 Test circuit for class-AB operation. 7 C15 C13 C4 2001 May 23 C12 C14 L2 L1 input 50 Ω L3 D.U.T. output 50 Ω Philips Semiconductors Product specification VHF power MOS transistor BLF147 List of components (class-AB test circuit) COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1, C3, C13, C14 film dielectric trimmer 7 to 100 pF 2222 809 07015 C2, C8, C9 multilayer ceramic chip capacitor (note 1) 75 pF C4, C5 multilayer ceramic chip capacitor 100 nF C6 multilayer ceramic chip capacitors in 3 × 100 nF parallel C7 electrolytic capacitor 2.2 µF, 63 V C10 multilayer ceramic chip capacitor (note 1) 100 pF C11, C12 multilayer ceramic chip capacitor (note 1) 150 nF C15 multilayer ceramic chip capacitor (note 1) 240 pF L1 6 turns enamelled 0.7 mm copper wire 145 nH length 5 mm; int. dia. 6 mm; leads 2 × 5 mm L2, L3 stripline (note 2) 41.1 Ω length 13 × 6 mm L4 4 turns enamelled 1.5 mm copper wire 148 nH length 8 mm; int. dia. 10 mm; leads 2 × 5 mm L5, L6 grade 3B Ferroxcube wideband HF choke L7 3 turns enamelled 2.2 mm copper wire 79 nH R1, R2 1 W metal film resistor 19.6 Ω 2322 153 51969 R3 0.4 W metal film resistor 10 kΩ 2322 151 71003 R4 0.4 W metal film resistor 1 MΩ 2322 151 71005 R5 1 W metal film resistor 10 Ω 2322 153 51009 2222 852 47104 2222 852 47104 4312 020 36642 length 8 mm; int. dia. 8 mm; leads 2 × 5 mm Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (εr = 2.2), thickness 1.6 mm. 2001 May 23 8 Philips Semiconductors Product specification VHF power MOS transistor BLF147 MGP058 30 MGP059 10 handbook, halfpage handbook, halfpage GP (dB) Zi (Ω) 20 5 ri 10 0 xi −5 0 0 10 20 30 f (MHz) 0 10 20 f (MHz) 30 Class-AB operation; VDS = 28 V; IDQ = 1 A; RGS = 6.25 Ω; PL = 150 W (PEP); RL = 2.1 Ω. Class-AB operation; VDS = 28 V; IDQ = 1 A; RGS = 6.25 Ω; PL = 150 W (PEP); RL = 2.1 Ω. Fig.14 Gain as a function of frequency, typical values. Fig.15 Input impedance as a function of frequency (series components), typical values. MGP061 4 MGP062 3 handbook, halfpage handbook, halfpage Zi (Ω) ZL (Ω) 2 2 ri RL 0 1 xi −2 −4 XL 0 0 50 100 150 f (MHz) −1 200 0 50 100 150 f (MHz) 200 Class-B operation; VDS = 28 V; IDQ = 0.2 A; RGS = 15 Ω; PL = 150 W. Class-B operation; VDS = 28 V; IDQ = 0.2 A; RGS = 15 Ω; PL = 150 W. Fig.16 Input impedance as a function of frequency (series components), typical values. Fig.17 Load impedance as a function of frequency (series components), typical values. 2001 May 23 9 Philips Semiconductors Product specification VHF power MOS transistor BLF147 MGP060 30 handbook, halfpage Gp (dB) 20 10 0 0 50 100 150 f (MHz) 200 Class-B operation; VDS = 28 V; IDQ = 0.2 A; RGS = 15 Ω; PL = 150 W. Fig.18 Power gain as a function of frequency, typical values. 2001 May 23 10 Philips Semiconductors Product specification VHF power MOS transistor BLF147 PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 4 leads SOT121B D A F D1 q C B U1 c H b 4 α w2 M C M 3 A U3 U2 p w1 M A M B M 1 2 H Q 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 7.27 6.17 5.82 5.56 0.16 0.10 inches 0.286 0.243 0.229 0.006 0.219 0.004 OUTLINE VERSION F H p Q q U1 U2 U3 w1 w2 2.67 2.41 28.45 25.52 3.30 3.05 4.45 3.91 18.42 24.90 24.63 6.48 6.22 12.32 12.06 0.25 0.51 0.506 0.505 0.105 1.120 0.496 0.495 0.095 1.005 0.130 0.120 0.175 0.725 0.154 0.98 0.97 0.255 0.245 0.485 0.475 0.01 0.02 D D1 12.86 12.83 12.59 12.57 45° REFERENCES IEC JEDEC EIAJ SOT121B 2001 May 23 α EUROPEAN PROJECTION ISSUE DATE 99-03-29 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613524/03/pp12 Date of release: 2001 May 23 Document order number: 9397 750 08411