DISCRETE SEMICONDUCTORS DATA SHEET BLF245B VHF push-pull power MOS transistor Product specification September 1992 Philips Semiconductors Product specification VHF push-pull power MOS transistor FEATURES BLF245B PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability • Gold metallization ensures excellent reliability. 1 fpage 4 d2 g2 5 DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 4-lead, SOT279 balanced flange envelope, with a ceramic cap. The mounting flange provides the common source connection for the transistors. Top view 2 d1 3 MSB018 MBB157 Fig.1 Simplified outline and symbol. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. WARNING PINNING - SOT279 PIN DESCRIPTION 1 gate 1 2 drain 1 3 gate 2 4 drain 2 5 source s g1 Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. QUICK REFERENCE DATA RF performance at Th = 25 °C in a push-pull common source test circuit. MODE OF OPERATION CW, class-B September 1992 f (MHz) VDS (V) PL (W) GP (dB) ηD (%) 175 28 30 > 14 > 55 2 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF245B LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). Per transistor section unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 65 V ±VGS gate-source voltage − 20 V ID DC drain current − 4.5 A Ptot total power dissipation up to Tmb = 25 °C; total device; − both sections equally loaded 75 W Tstg storage temperature −65 150 °C Tj junction temperature − 200 °C THERMAL RESISTANCE SYMBOL PARAMETER THERMAL RESISTANCE CONDITIONS Rth j-mb thermal resistance from junction to mounting base total device; both sections equally loaded 2.3 K/W Rth mb-h thermal resistance from mounting base to heatsink total device; both sections equally loaded 0.3 K/W MRA922 102 handbook, halfpage MRA929 120 handbook, halfpage ID (A) Ptot (W) 10 80 (2) (1) (1) (2) 40 1 10−1 1 10 VDS (V) 0 102 0 (1) Current in this area may be limited by RDS(on). (2) Tmb = 25 °C. Total device; both sections equally loaded. 80 120 Th (oC) 160 (1) Continuous operation. (2) Short-time operation during mismatch. Total device; both sections equally loaded. Fig.2 DC SOAR. September 1992 40 Fig.3 Power/temperature derating curves. 3 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF245B CHARACTERISTICS (per section) Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS V(BR)DSS drain-source breakdown voltage MIN. TYP. MAX. UNIT ID = 5 mA; VGS = 0 65 − − V IDSS drain-source leakage current VGS = 0; VDS = 28 V − − 1 mA IGSS gate-source leakage current ±VGS = 20 V; VDS = 0 − − 1 µA VGS(th) gate-source threshold voltage ID = 5 mA; VDS = 10 V 2 − 4.5 V gfs forward transconductance ID = 0.75 A; VDS = 10 V 600 850 − mS RDS(on) drain-source on-state resistance ID = 0.75 A; VGS = 10 V − 0.8 1.5 Ω IDSX on-state drain current VGS = 10 V; VDS = 10 V − 5 − A Cis input capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 60 − pF Cos output capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 40 − pF Crs feedback capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 4.5 − pF MGP180 MGP181 6 2 handbook, halfpage handbook, halfpage T.C. (mV/K) Tj = 25 °C ID (A) 0 125 °C 4 −2 −4 2 −6 −8 0 1 10 102 ID (mA) 0 103 4 VDS = 10 V. VDS = 10 V. Fig.4 Fig.5 Temperature coefficient of gate-source voltage as a function of drain current, typical values per section. September 1992 4 8 12 VGS (V) 16 Drain current as a function of gate-source voltage, typical values per section. Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF245B MGP182 2 MGP183 160 handbook, halfpage handbook, halfpage C (pF) RDS(on) (Ω) 120 1 80 Cis Cos 40 0 0 0 40 80 120 Tj (°C) 160 0 10 ID = 0.75 A; VGS = 10 V VGS = 0; f = 1 MHz. Fig.6 Fig.7 Drain-source on-state resistance as a function of junction temperature, typical values per section. MGP184 20 handbook, halfpage Crs (pF) 10 0 0 10 20 30 VDS (V) 40 VGS = 0; f = 1 MHz. Fig.8 Feedback capacitance as a function of drain-source voltage, typical values per section. September 1992 5 20 30 VDS (V) 40 Input and output capacitance as functions of drain-source voltage, typical values per section. Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF245B APPLICATION INFORMATION FOR CLASS-B OPERATION Th = 25 °C; Rth mb-h = 0.3 K/W; unless otherwise specified. RF performance in a push-pull, common source, class-B test circuit. MODE OF OPERATION CW, class-B f (MHz) VDS (V) IDQ (mA) PL (W) GP (dB) ηD (%) 175 28 2 × 25 30 > 14 typ. 18 > 55 typ. 65 Ruggedness in class-B operation The BLF245B is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases, under the following conditions: VDS = 28 V, f = 175 MHz at rated output power. MGP185 20 Gp handbook, halfpage Gp (dB) handbook, halfpage PL (W) ηD 60 30 10 40 20 5 20 10 0 0 15 MGP186 40 80 ηD 0 0 10 20 30 PL (W) 0 40 1.5 PIN (W) 2.0 Fig.10 Load power as a function of input power, typical values. Power gain and efficiency as functions of output power, typical values. September 1992 1.0 Class-B operation; VDS = 28 V; IDQ = 2 × 25 mA; ZL = 8.8 + j12.7 Ω; f = 175 MHz. Class-B operation; VDS = 28 V; IDQ = 2 × 25 mA; ZL = 8.8 + j12.7 Ω; f = 175 MHz. Fig.9 0.5 6 Philips Semiconductors Product specification VHF push-pull power MOS transistor R5 +VG handbook, full pagewidth R3 BLF245B +VD C11 C12 C13 C7 L10 C8 C14 R7 C15 R1 D.U.T. L1 50 Ω input L4 C1 C3 L2 C4 L6 C5 L8 C6 L14 L16 L12 C27 C25 L18 C21 C22 C23 C24 L21 50 Ω output C26 C2 L3 L20 L5 L7 L13 L9 L17 L19 L22 L15 C16 R2 C17 R8 C10 L11 C9 C18 C19 C20 +VG R6 MGP187 R4 f = 175 MHz. +VD Fig.11 Test circuit for class-B operation. List of components (see test circuit) COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1, C2 multilayer ceramic chip capacitor (note 1) 270 pF C3 multilayer ceramic chip capacitor (note 1) 24 pF C4 film dielectric trimmer 4 to 60 pF C5, C25, C26 multilayer ceramic chip capacitor (note 1) 91 pF C6, C22, C24 film dielectric trimmer 5 to 60 pF 2222 809 08003 C7, C9, C12, C14, C17, C19 multilayer ceramic chip capacitor 100 nF 2222 852 47104 September 1992 7 2222 809 08002 Philips Semiconductors Product specification VHF push-pull power MOS transistor COMPONENT C8, C10 BLF245B DESCRIPTION VALUE multilayer ceramic chip capacitor (note 1) DIMENSIONS CATALOGUE NO. 680 pF C11, C20 multilayer ceramic chip capacitor 10 nF C13, C18 electrolytic capacitor 10 µF, 63 V 2222 852 47103 C15, C16 multilayer ceramic chip capacitor (note 1) 100 pF C21, C27 multilayer ceramic chip capacitor (note 1) 75 pF C23 multilayer ceramic chip capacitor (note 1) 36 pF L1, L3, L20, L22 stripline (note 2) 55 Ω length 111 mm width 2.5 mm L2, L21 semi-rigid cable 50 Ω length 111 mm ext. dia. 2.2 mm L4, L5 stripline (note 2) 49.5 Ω length 28 mm width 3 mm L6, L7 stripline (note 2) 49.5 Ω length 22.5 mm width 3 mm L8, L9 stripline (note 2) 49.5 Ω length 4.5 mm width 3 mm L10, L11 grade 3B Ferroxcube RF choke L12, L13 stripline (note 2) 49.5 Ω length 21 mm width 3 mm L14, L15 4 turns enamelled 1 mm copper wire 70 nH length 9 mm int. dia. 6 mm leads 2 × 5 mm L16, L17 stripline (note 2) 49.5 Ω length 30 mm width 3 mm L18, L19 stripline (note 2) 49.5 Ω length 26 mm width 3 mm R1, R2 0.4 W metal film resistor 10 Ω R3, R4 10 turns potentiometer 50 Ω R5, R6 0.4 W metal film resistor 205 kΩ R7, R8 0.4 W metal film resistor 10 Ω 4312 020 36642 Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines are on a double copper-clad printed circuit board, with epoxy glass dielectric (εr = 4.5), thickness 1⁄16 inch. The other side of the board is fully metallized and used as a ground plane. The ground planes on each side of the board are connected together by means of copper straps and hollow rivets. September 1992 8 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF245B +VG +VD handbook, full pagewidth C11 L10 L1 + L2 C15 C14 C1 C3 C5 L4 L5 C2 C4 C12 L20 C13 R7 L14 C7 C8 R1 L16 C25 C23 L18 L19 C24 C26 L12 L6 C27 L7 C6 R2 C21 L8 L9 C22 L13 L17 C10 C9 L15 C16 C17 R8 L11 L3 L21 + L22 C18 C19 +VG C20 MBA378 +VD 200 mm handbook, full pagewidth rivet rivet copper strap copper strap copper strap copper strap rivet rivet copper strap 110 mm copper strap copper strap copper strap rivet rivet MBA377 The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as a ground. Earth connections are made by means of copper straps and hollow rivets for a direct contact between the upper and lower sheets. Fig.12 Component layout for 175 MHz test circuit. September 1992 9 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF245B MGP188 10 MGP189 30 handbook, halfpage handbook, halfpage Zi (Ω) ZL (Ω) 5 ri 20 xi 10 0 XL −5 −10 RL 0 0 100 200 300 f (MHz) 400 0 100 200 300 f (MHz) 400 Class-B operation; VDS = 28 V; IDQ = 2 × 25 mA; RGS = 10 Ω; PL = 30 W (total device). Class-B operation; VDS = 28 V; IDQ = 2 × 25 mA; RGS = 10 Ω; PL = 30 W (total device). Fig.13 Input impedance as a function of frequency (series components), typical values per section. Fig.14 Load impedance as a function of frequency (series components), typical values per section. MGP190 25 Gp handbook, halfpage (dB) 20 15 handbook, halfpage 10 5 Zi ZL MBA379 0 0 100 200 300 f (MHz) 400 Class-B operation; VDS = 28 V; IDQ = 2 × 25 mA; RGS = 10 Ω; PL = 30 W (total device). Fig.15 Definition of MOS impedance. September 1992 Fig.16 Power gain as a function of frequency, typical values per section. 10 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF245B PACKAGE OUTLINE Flanged double-ended ceramic package; 2 mounting holes; 4 leads SOT279A D A F 5 U1 B q C w2 M C H1 1 H c 4 E U2 A 2 w1 M A B p 3 w3 M b Q e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D E e F H H1 p Q q U1 U2 w1 w2 w3 mm 6.84 6.01 1.66 1.39 0.16 0.10 9.28 9.01 5.97 5.71 3.05 3.05 2.54 12.96 11.93 4.96 4.19 3.48 3.22 4.35 4.03 18.42 24.90 24.63 5.97 5.71 0.51 1.02 0.25 inches 0.269 0.237 0.065 0.006 0.055 0.004 0.365 0.355 0.235 0.225 0.12 0.120 0.100 0.51 0.47 0.195 0.137 0.165 0.127 0.171 0.725 0.159 0.98 0.97 0.235 0.225 0.02 0.04 0.01 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ SOT279A September 1992 EUROPEAN PROJECTION ISSUE DATE 97-06-28 11 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF245B DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1992 12