PHILIPS BLF248

DISCRETE SEMICONDUCTORS
DATA SHEET
BLF248
VHF push-pull power MOS
transistor
Product specification
September 1992
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
FEATURES
BLF248
PIN CONFIGURATION
• High power gain
• Easy power control
• Good thermal stability
• Gold metallization ensures
excellent reliability.
1
2
d2
halfpage
g2
DESCRIPTION
5
Dual push-pull silicon N-channel
enhancement mode vertical D-MOS
transistor, designed for large signal
amplifier applications in the VHF
frequency range.
The transistor is encapsulated in a
4-lead SOT262 A1 balanced flange
envelope, with two ceramic caps. The
mounting flange provides the
common source connection for the
transistors.
DESCRIPTION
1
drain 1
2
drain 2
3
gate 1
4
gate 2
5
source
d1
5
3
4
Top view
MBB157
MSB008
Fig.1 Simplified outline and symbol.
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
WARNING
PINNING - SOT262 A1
PIN
s
g1
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO discs are not damaged. All persons who handle, use or dispose
of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a push-pull common source test circuit.
MODE OF OPERATION
class-AB
September 1992
f
(MHz)
VDS
(V)
PL
(W)
GP
(dB)
ηD
(%)
225
28
300
> 10
> 55
175
28
300
typ. 13
typ. 67
2
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF248
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Per transistor section unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
−
65
V
±VGS
gate-source voltage
−
20
V
ID
DC drain current
−
25
A
Ptot
total power dissipation
500
W
Tstg
storage temperature
150
°C
up to Tmb = 25 °C total device; −
both sections equally loaded
−65
THERMAL RESISTANCE
SYMBOL
PARAMETER
CONDITIONS
THERMAL RESISTANCE
Rth j-mb
thermal resistance from
junction to mounting base
total device; both sections
equally loaded.
0.35 K/W
Rth mb-h
thermal resistance from
mounting base to heatsink
total device; both sections
equally loaded.
0.15 K/W
MGP203
MRA933
102
handbook, halfpage
600
handbook, halfpage
Ptot
ID
(A)
(2)
(W)
(1)
(2)
400
(1)
10
200
1
1
10
VDS (V)
0
102
0
(1) Current is this area may be limited by RDS(on).
(2) Tmb = 25 °C.
Total device; both sections equally loaded.
100
Th (°C)
150
(1) Continuous operation.
(2) Short-time operation during mismatch.
Total device; both sections equally loaded.
Fig.2 DC SOAR.
September 1992
50
Fig.3 Power/temperature derating curves.
3
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF248
CHARACTERISTICS (per section)
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
VGS = 0; ID = 100 mA
65
−
−
V
V(BR)DSS
drain-source breakdown voltage
IDSS
drain-source leakage current
VGS = 0; VDS = 28 V
−
−
5
mA
IGSS
gate-source leakage current
±VGS = 20 V; VDS = 0
−
−
1
µA
VGS(th)
gate-source threshold voltage
ID = 100 mA; VDS = 10 V
2
−
4.5
V
∆VGS
gate-source voltage difference
of both transistor sections
ID = 100 mA; VDS = 10 V
−
−
100
mV
gfs
forward transconductance
ID = 8 A; VDS = 10 V
5
7.5
−
S
gfs1/gfs2
forward transconductance ratio
of both transistor sections
ID = 8 A; VDS = 10 V
0.9
−
1.1
RDS(on)
drain-source on-state resistance
ID = 8 A; VGS = 10 V
−
0.1
0.15
Ω
IDSX
on-state drain current
VGS = 10 V; VDS = 10 V
−
37
−
A
Cis
input capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
−
500
−
pF
Cos
output capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
−
360
−
pF
Crs
feedback capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
−
46
−
pF
MGP204
0
MGP205
60
handbook, halfpage
handbook, halfpage
T.C.
(mV/K)
ID
(A)
−1
40
−2
−3
20
−4
−5
10−1
1
ID (A)
0
10
0
5
VDS = 10 V.
VDS = 10 V; Tj = 25 °C.
Fig.4
Fig.5
Temperature coefficient of gate-source
voltage as a function of drain current, typical
values per section.
September 1992
4
10
15
VGS (V)
20
Drain current as a function of gate-source
voltage, typical values per section.
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF248
MGP207
1500
MGP206
handbook, halfpage
200
handbook, halfpage
C
(pF)
RDS(on)
(mΩ)
1000
100
Cis
500
Cos
0
0
0
0
50
100
Tj (°C)
10
150
ID = 8 A; VGS = 10 V.
VGS = 0; f = 1 MHz.
Fig.6
Fig.7
Drain-source on-state resistance as a
function of junction temperature, typical
values per section.
MGP208
600
handbook, halfpage
Crs
(pF)
400
200
0
0
10
20
30
VDS (V)
40
VGS = 0; f = 1 MHz.
Fig.8
Feedback capacitance as a function of
drain-source voltage, typical values per
section.
September 1992
5
20
30
VDS (V)
40
Input and output capacitance as functions
of drain-source voltage, typical values per
section.
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF248
APPLICATION INFORMATION FOR CLASS-AB OPERATION
Th = 25 °C; Rth mb-h = 0.15 K/W, unless otherwise specified.
RF performance in a linear amplifier in a common source class-AB circuit.
RGS = 536 Ω per section; optimum load impedance per section = 0.79 − j0.11 Ω.
MODE OF OPERATION
class-AB
f
(MHz)
VDS
(V)
PL
(W)
GP
(dB)
ηD
(%)
225
28
300
> 10
typ. 11.5
> 55
typ. 65
175
28
300
typ. 13
typ. 67
Ruggedness in class-AB operation
The BLF248 is capable of withstanding a load mismatch
corresponding to VSWR = 50 through all phases under the
following conditions:
VDS = 28 V; f = 225 MHz at rated output power.
MGP210
MGP209
20
Gp
(dB)
ηD
Th = 25 °C
70 °C
15
25 °C
70 °C
Gp
10
5
0
0
400
80
handbook, halfpage
100
200
300
PL (W)
handbook, halfpage
ηD
(%)
PL
(W)
60
70 °C
40
200
20
100
0
0
400
0
20
30
PIN (W)
40
Fig.10 Load power as a function of input power,
typical values.
Power gain and efficiency as functions of
load power, typical values.
September 1992
10
Class-AB operation; VDS = 28 V; IDQ = 2 × 250 mA;
RGS = 536 Ω (per section); ZL = 0.79 − j0.11 Ω (per
section); f = 225 MHz.
Class-AB operation; VDS = 28 V; IDQ = 2 × 250 mA;
RGS = 536 Ω (per section); ZL = 0.79 − j0.11 Ω (per
section); f = 225 MHz.
Fig.9
Th = 25 °C
300
6
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C12
C17
C8
R7
R2
L12
C18
C9
C13
C6
L13
R3
C25
D.U.T.
L1
50 Ω
input
C1
L4
L2
C4
L18
L20
C29
L22
L8
L6
C3
L10 L16
C5
C22
C23
C24
C27
L23
C28
50 Ω
output
Philips Semiconductors
A
C16
VHF push-pull power MOS transistor
dbook, full pagewidth
September 1992
R1
VDD1
7
C2
L3
L7
L5
C30
L9
L11
L21
L24
L14
C7
C10
L19
L17
C26
R4
C14
C19
R5
R8
A
L15
C11
C20
IC1
C15
R9
R6
C34
C32
C21
C31
MGP211
f = 225 MHz.
Fig.11 Test circuit for class-AB operation.
BLF248
VDD2
Product specification
VDD1
C33
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF248
List of components (class-AB test circuit)
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
C1, C2
multilayer ceramic chip capacitor
(note 1)
2 × 56 pF
+ 18 pF in parallel,
500 V
C3
film dielectric trimmer
2 to 9 pF
C4
multilayer ceramic chip capacitor
(note 1)
47 pF, 500 V
C5
film dielectric trimmer
5 to 60 pF
C6, C7, C9,
C10, C12, C15,
C31, C34
multilayer ceramic chip capacitor
(note 1)
1 nF, 500 V
C8, C11, C16,
C21, C32
multilayer ceramic chip capacitor
100 nF, 50 V
C13, C14, C18,
C19
multilayer ceramic chip capacitor
(note 1)
510 pF, 500 V
C17, C20, C33
electrolytic capacitor
10 µF, 63 V
C22
multilayer ceramic chip capacitor
(note 1)
82 pF, 500 V
C23
multilayer ceramic chip capacitor
(note 1)
10 pF + 30 pF
in parallel, 500 V
C24, C28
film dielectric trimmer
2 to 18 pF
C25, C26
multilayer ceramic chip capacitor
(note 1)
39 pF + 47 pF
in parallel, 500 V
C27
multilayer ceramic chip capacitor
(note 1)
18 pF, 500 V
C29, C30
multilayer ceramic chip capacitor
(note 1)
3 × 100 pF
in parallel, 500 V
L1, L3, L22, L24
stripline (note 2)
50 Ω
4.8 × 80 mm
L2, L23
semi-rigid cable (note 3)
50 Ω
ext. dia. 3.6 mm
ext. conductor
length 80 mm
L4, L5
stripline (note 2)
43 Ω
6 × 32.5 mm
L6, L7, L10, L11
stripline (note 2)
43 Ω
6 × 10.5 mm
L8, L9
stripline (note 2)
43 Ω
6 × 3 mm
L12, L15
grade 3B Ferroxcube wide-band
HF choke
2 in parallel
L13, L14
2 turns enamelled 1.6 mm copper
wire
25 nH
int. dia. 5 mm
leads 2 × 7 mm
space 2.5 mm
L16, L17
stripline (notes 2 and 4)
43 Ω
6 × 3 mm
L18, L19
stripline (notes 2 and 4)
43 Ω
6 × 35 mm
L20, L21
stripline (notes 2 and 4)
43 Ω
6 × 9 mm
R1, R6
10 turns potentiometer
50 kΩ
R2, R5
0.4 W metal film resistor
1 kΩ
September 1992
8
CATALOGUE NO.
2222 809 09005
2222 809 08003
2222 852 47104
2222 809 09006
4312 020 36642
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
COMPONENT
BLF248
DESCRIPTION
VALUE
R3, R4
0.4 W metal film resistor
536 Ω
R7, R8
1 W metal film resistor
10 Ω ±5%
R9
1 W metal film resistor
3.16 kΩ
IC1
78L05 voltage regulator
DIMENSIONS
CATALOGUE NO.
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. L1, L3 - L11, L16 - L22 and L24 are micro-striplines on a double copper-clad printed circuit board, with glass
microfibre PTFE dielectric (εr = 2.2), thickness 1⁄16 inch, thickness of copper sheet 2 × 35 µm.
3. L2 and L23 are soldered on striplines L1 and L24 respectively.
4. A copper strap, thickness 0.8 mm, is soldered on striplines L16 - L21.
September 1992
9
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
handbook, full pagewidth
BLF248
130
119
100
IC1
R9
+VDD1
to R1, R6
C31
C32
C16
L12
C17
R7
C34
L1
C12
C13
C18
C33
L2
L12
slider R1
L22
C9
L13
R2
C8
+VDD1
C6
hollow rivet
R3
C1
L4
hollow rivets
C3
L5
L8
L10
L6
C4
L7
C5
C2
R4
R5
C11
L9
C22
L11
C29
C25
L16
L20
L18
C27
C23
C24
L17
C26
L19
C10
hollow rivets
C28
L21
C30
+VDD2
L14
L3
slider R6
C7
L23
L15
L24
R8
C19
copper strap
C20
L15
C14
C15
C21
copper strap
MGP213
The circuit and components are situated on one side of the printed circuit board, the other side being fully
metallized, to serve as a ground plane. Earth connections are made by means of copper straps and hollow rivets.
Dimensions in mm.
Fig.12 Component layout for 225 MHz class-AB test circuit.
September 1992
10
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF248
MGP218
MGP217
3
5
handbook, halfpage
handbook, halfpage
Zi
(Ω)
ZL
(Ω)
ri
0
2
xi
RL
−5
1
XL
−10
0
−15
−20
−1
0
50
100
150
0
200
250
f (MHz)
50
100
150
200
250
f (MHz)
Class-AB operation; VDS = 28 V; ID = 2 × 250 mA;
RGS = 536 Ω (per section);
PL = 300 W (total device); Th = 25 °C.
Class-AB operation; VDS = 28 V; ID = 2 × 250 mA;
RGS = 536 Ω (per section);
PL = 300 W (total device); Th = 25 °C.
Fig.13 Input impedance as a function of frequency
(series components), typical values per
section.
Fig.14 Load impedance as a function of frequency
(series components), typical values per
section.
MGP216
40
handbook, halfpage
Gp
(dB)
30
20
10
0
0
50
100
150
200
250
f (MHz)
Class-AB operation; VDS = 28 V; ID = 2 × 250 mA;
RGS = 536 Ω (per section);
PL = 300 W (total device); Th = 25 °C.
Fig.15 Power gain as a function of frequency,
typical values per section.
September 1992
11
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF248
PACKAGE OUTLINE
Flanged double-ended ceramic package; 2 mounting holes; 4 leads
SOT262A1
D
A
F
U1
B
q
C
w2 M C
H1
1
H
c
2
E1
p
U2
5
E
w1 M A B
A
3
4
w3 M
b
Q
e
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
mm
5.77
5.00
5.85
5.58
0.16
0.10
inches
0.227
0.197
0.230 0.006
0.220 0.004
OUTLINE
VERSION
D
F
H
H1
p
Q
q
U1
U2
w1
w2
w3
21.98
10.27 10.29
11.05
21.71
10.05 10.03
1.78
1.52
20.58
20.06
17.02
16.51
3.28
3.02
2.85
2.59
27.94
34.17
33.90
9.91
9.65
0.51
1.02
0.25
0.865
0.404 0.405
0.435
0.855
0.396 0.395
0.070
0.060
0.81
0.79
0.67
0.65
0.129
0.119
0.112
1.100
0.102
1.345
1.335
0.390
0.380
0.02
0.04
0.01
e
E
E1
REFERENCES
IEC
JEDEC
EIAJ
SOT262A1
September 1992
EUROPEAN
PROJECTION
ISSUE DATE
97-06-28
12
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF248
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
September 1992
13