PHILIPS 74HC1GU04GW

INTEGRATED CIRCUITS
DATA SHEET
74HC1GU04
Inverter
Product specification
File under Integrated Circuits, IC06
1998 Nov 18
Philips Semiconductors
Product specification
Inverter
74HC1GU04
FEATURES
QUICK REFERENCE DATA
GND = 0 V; Tamb = 25 °C; tr = tf = 6.0 ns.
• Wide operating voltage:
2.0 to 6.0 V
SYMBOL
• Symmetrical output impedance
PARAMETER
tPHL/tPLH
propagation
delay inA to outY
• Balanced propagation delays
CI
input capacitance
• Very small 5-pin package
CPD
power
dissipation
capacitance
• Low power dissipation
• Output capability: standard.
CONDITIONS
TYP.
CL = 15 pF;
VCC = 5 V
5
ns
5
pF
notes 1 and 2
14
pF
Notes
DESCRIPTION
The 74HC1GU04 is a high-speed
Si-gate CMOS device.
The 74HC1GU04 provides the
inverting single stage function.
The standard output currents are 1⁄2
compared to the 74HCU04.
1. CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2 × fi + ∑ (CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
∑ (CL × VCC2 × fo) = sum of outputs.
FUNCTION TABLE
See note 1.
2. For HC1G the condition is VI = GND to VCC.
INPUT
inA
OUTPUT
outY
L
H
PIN
H
L
1
n.c.
not connected
2
inA
data input
3
GND
ground (0 V)
4
outY
data output
5
VCC
DC supply voltage
Note
1. H = HIGH voltage level;
L = LOW voltage level.
1998 Nov 18
UNIT
PINNING
SYMBOL
2
DESCRIPTION
Philips Semiconductors
Product specification
Inverter
74HC1GU04
ORDERING INFORMATION
PACKAGES
OUTSIDE NORTH
AMERICA
74HC1GU04GW
TEMPERATURE
RANGE
PINS
PACKAGE
MATERIAL
CODE
MARKING
−40 to +125 °C
5
SC-88A
plastic
SOT353
HD
handbook, halfpage
n.c. 1
inA 2
GND
5 VCC
U04
3
handbook, halfpage
4
2
outY
inA
MNA042
2
1
Fig.2 Logic symbol.
handbook, halfpage
4
MNA044
inA
outY
MNA045
Fig.3 IEC logic symbol.
1998 Nov 18
4
MNA043
Fig.1 Pin configuration.
handbook, halfpage
outY
Fig.4 Logic diagram.
3
Philips Semiconductors
Product specification
Inverter
74HC1GU04
RECOMMENDED OPERATING CONDITIONS
74HC1G
SYMBOL
PARAMETER
CONDITIONS
UNIT
MIN.
TYP.
MAX.
VCC
DC supply voltage
2.0
5.0
6.0
V
VI
input voltage
0
−
VCC
V
VO
output voltage
0
−
VCC
V
Tamb
operating ambient
temperature range
−40
+25
+125
°C
tr, tf
input rise and fall times except VCC = 2.0 V
for Schmitt-trigger inputs
VCC = 4.5 V
−
−
1000
ns
−
−
500
ns
VCC = 6.0 V
−
−
400
ns
see DC and AC
characteristics per device
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134). Voltages are referenced to GND (ground = 0 V).
SYMBOL
VCC
PARAMETER
CONDITIONS
MIN.
−0.5
DC supply voltage
MAX.
+7.0
UNIT
V
±IIK
DC input diode
VI < −0.5 or VI > VCC + 0.5 V
−
20
mA
±IOK
DC output diode current(1)
VO < −0.5 or VO > VCC + 0.5 V
−
20
mA
±IO
DC output source or sink
current standard outputs(1)
−0.5 V < VO < VCC + 0.5 V
−
12.5
mA
±ICC
DC VCC or GND current for
types with standard outputs(1)
−
25
mA
Tstg
storage temperature range
−65
+150
°C
PD
power dissipation per
for temperature range: −40 to +125 °C;
package 5 pins plastic SC-88A above +55 °C PD derates linearly with
2.5 mW/K
−
200
mW
current(1)
Note
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
1998 Nov 18
4
Philips Semiconductors
Product specification
Inverter
74HC1GU04
DC CHARACTERISTICS FOR THE 74HC1GU04
Over recommended operating conditions. Voltage are referenced to GND (ground = 0 V).
TEST CONDITIONS
SYMBOL
VIL
VOH
VOH
VOL
−40 to +85
PARAMETER
OTHER
VIH
Tamb (°C)
HIGH-level input
voltage
LOW-level input voltage
HIGH-level output
voltage; all outputs
HIGH-level output
voltage; standard
outputs
LOW-level output
voltage; all outputs
VCC (V)
MIN.
TYP.(1)
−40 to +125
MAX.
MIN.
UNIT
MAX.
2.0
1.7
1.4
−
1.7
−
V
4.5
3.6
2.6
−
3.6
−
V
6.0
4.8
3.4
−
4.8
−
V
2.0
−
0.6
0.3
−
0.3
V
4.5
−
1.9
0.9
−
0.9
V
6.0
−
2.6
1.2
−
1.2
V
2.0
1.8
2.0
−
1.8
−
V
4.5
4.0
4.5
−
4.0
−
V
6.0
5.5
6.0
−
5.5
−
V
VI = VIH or VIL,
−IO = 2.0 mA
4.5
4.13
4.32
−
3.7
−
V
VI = VIH or VIL,
−IO = 2.6 mA
6.0
5.63
5.81
−
5.2
−
V
VI = VIH or VIL,
IO = 20 µA
2.0
−
0
0.2
−
0.2
V
4.5
−
0
0.5
−
0.5
V
6.0
−
0
0.5
−
0.5
V
VI = VIH or VIL,
−IO = 20 µA
LOW-level output
voltage; standard
outputs
VI = VIH or VIL,
IO = 2.0 mA
4.5
−
0.15
0.33
−
0.4
V
VI = VIH or VIL,
IO = 2.6 mA
6.0
−
0.16
0.33
−
0.4
V
II
input leakage current
VI = VCC or GND
6.0
−
−
1.0
−
1.0
µA
ICC
quiescent supply
current
VI = VCC or GND, 6.0
IO = 0
−
−
10
−
20
µA
VOL
Note
1. All typical values are measured at Tamb = 25 °C.
1998 Nov 18
5
Philips Semiconductors
Product specification
Inverter
74HC1GU04
AC CHARACTERISTICS
GND = 0 V; tr = tf = 6.0 ns; CL = 50 pF.
Tamb (°C)
TEST CONDITIONS
SYMBOL
WAVEFORMS
tPHL/tPLH
−40 to +85
PARAMETER
propagation delay
inA to outY
see Figs 5 and 6
VCC (V)
MIN. TYP.(1)
−40 to +125
MAX.
MIN.
UNIT
MAX.
2.0
−
10
90
−
105
ns
4.5
−
7
18
−
21
ns
6.0
−
6
15
−
18
ns
Note
1. All typical values are measured at Tamb = 25 °C.
AC WAVEFORMS
handbook, halfpage
inA INPUT
PULSE
GENERATOR
tPHL
outY OUTPUT
VCC
handbook, halfpage
VM(1)
tPLH
VI
VO
D.U.T.
RT
CL
50 pF
MNA034
VM(1)
MNA046
Definitions for test circuit:
CL = Load capacitance including jig and probe capacitance.
(See “AC characteristics” for values).
RT = Termination resistance should be equal to the output
impedance ZO of the pulse generator.
(1) HC1G VM = 50%; VI = GND to VCC.
Fig.5
The input (inA) to output (outY) propagation
delays.
1998 Nov 18
Fig.6 Load circuitry for switching times.
6
Philips Semiconductors
Product specification
Inverter
74HC1GU04
TYPICAL TRANSFER CHARACTERISTICS
MNA047
1
handbook, halfpage
2
VO
(V)
ICC
(mA)
0.5
0
0
1
VI (V)
MNA048
10
handbook, halfpage
VO
(V)
ICC
(mA)
1
5
0
0
2
2.5
0
0
2.5
Fig.7 VCC = 2.0 V; IO = 0.
5
VI (V)
Fig.8 VCC = 4.5 V; IO = 0.
MNA049
20
5
handbook, halfpage
6
handbook, halfpage
VO
(V)
ICC
(mA)
10
Rbias = 560 kΩ
VCC
0.47 µF
3
VI
(f = 1 kHz)
input
output 100 µF
A IO
GND
MNA050
0
0
0
3
VI (V)
6
Fig.10 Test set-up for measuring forward
transconductance gfs = ∆IO/∆VI at VO is
constant.
Fig.9 VCC = 6.0 V; IO = 0.
1998 Nov 18
7
Philips Semiconductors
Product specification
Inverter
74HC1GU04
APPLICATION INFORMATION
Note to the application information.
Some applications for the HC1GU04 are:
All values given are typical unless otherwise specified.
• Linear amplifier (see Fig.11)
• In crystal oscillator design (see Fig.12).
R2
handbook, halfpage
VCC
1 µF
R1
handbook, halfpage
U04
R1
ZL
R2
U04
GND
MNA052
C1
C2
out
MNA053
ZL > 10 kΩ; AOL = 20 (typical)
A OL
A u = – -----------------------------------------------;
R1
1 + -------- ( 1 + A OL )
R2
1
V O max (p-p) ≈ V CC – 1.5 V centered at --- V CC
2
C1 = 47 pF (typical).
C2 = 22 pF (typical).
R1 = 1 to 10 MΩ (typical).
R2 optimum value depends on the frequency and required stability
against changes in VCC or average minimum ICC (ICC is typically
2 mA at VCC = 3 V and f = 1 MHz).
R1 ≥ 3 kΩ, R2 ≤ 1 MΩ.
Typical unity gain bandwidth product is 5 MHz.
C1 see Fig.13.
AOL = open loop amplification.
Au = voltage amplification.
Fig.11 HC1GU04 used as a linear amplifier.
Fig.12 Crystal oscillator configuration.
Where:
External components for resonator (f < 1 MHz)
FREQUENCY
(kHz)
R1 (MΩ) R2 (kΩ) C1 (pF)
C2 (pF)
10 to 15.9
2.2
220
56
20
16 to 24.9
2.2
220
56
10
25 to 54.9
2.2
100
56
10
55 to 129.9
2.2
100
47
5
130 to 199.9
2.2
47
47
5
200 to 349.9
2.2
47
47
5
350 to 600
2.2
47
47
5
1998 Nov 18
All values given are typical and must be used as an initial
set-up.
8
Philips Semiconductors
Product specification
Inverter
74HC1GU04
Optimum value for R2
FREQUENCY
(kHz)
R2 (kΩ)
3
2.0
8.0
6
1.0
4.7
10
0.5
2.0
14
>14
OPTIMUM FOR
MNA054
80
minimum required ICC
minimum influence due to
change in VCC
handbook, halfpage
input
capacitance
(pF)
(1)
60
minimum required ICC
minimum influence by VCC
(2)
40
0.5
1.0
(3)
replace R2 by C3 with a typical value
of 35 pF
20
0
0
2
4
6
VI (V)
8
(1) VCC = 2.0 V.
(2) VCC = 4.5 V.
(3) VCC = 6.0 V.
Fig.13 Typical input capacitance as a function of
the input voltage.
1998 Nov 18
9
Philips Semiconductors
Product specification
Inverter
74HC1GU04
PACKAGE OUTLINE
Plastic surface mounted package; 5 leads
SOT353
D
E
B
y
X
A
HE
5
v M A
4
Q
A
A1
1
2
e1
3
bp
c
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E (2)
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.30
0.20
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.25
0.15
0.2
0.2
0.1
OUTLINE
VERSION
SOT353
1998 Nov 18
REFERENCES
IEC
JEDEC
EIAJ
SC-88A
10
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Philips Semiconductors
Product specification
Inverter
74HC1GU04
• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.
SOLDERING
Introduction to soldering surface mount packages
• For packages with leads on two sides and a pitch (e):
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “Data Handbook IC26; Integrated Circuit Packages”
(document order number 9398 652 90011).
– larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;
There is no soldering method that is ideal for all surface
mount IC packages. Wave soldering is not always suitable
for surface mount ICs, or for printed-circuit boards with
high population densities. In these situations reflow
soldering is often used.
– smaller than 1.27 mm, the footprint longitudinal axis
must be parallel to the transport direction of the
printed-circuit board.
The footprint must incorporate solder thieves at the
downstream end.
• For packages with leads on four sides, the footprint must
be placed at a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
Reflow soldering
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Several methods exist for reflowing; for example,
infrared/convection heating in a conveyor type oven.
Throughput times (preheating, soldering and cooling) vary
between 100 and 200 seconds depending on heating
method.
Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 230 °C.
Manual soldering
Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.
Wave soldering
Conventional single wave soldering is not recommended
for surface mount devices (SMDs) or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.
When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.
To overcome these problems the double-wave soldering
method was specifically developed.
If wave soldering is used the following conditions must be
observed for optimal results:
1998 Nov 18
11
Philips Semiconductors
Product specification
Inverter
74HC1GU04
Suitability of surface mount IC packages for wave and reflow soldering methods
SOLDERING METHOD
PACKAGE
REFLOW(1)
WAVE
BGA, SQFP
not suitable
HLQFP, HSQFP, HSOP, SMS
not
PLCC(3),
SO, SOJ
suitable
suitable(2)
suitable
suitable
suitable
LQFP, QFP, TQFP
not recommended(3)(4)
suitable
SSOP, TSSOP, VSO
not recommended(5)
suitable
Notes
1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”.
2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).
3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Nov 18
12
Philips Semiconductors
Product specification
Inverter
74HC1GU04
NOTES
1998 Nov 18
13
Philips Semiconductors
Product specification
Inverter
74HC1GU04
NOTES
1998 Nov 18
14
Philips Semiconductors
Product specification
Inverter
74HC1GU04
NOTES
1998 Nov 18
15
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MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Internet: http://www.semiconductors.philips.com
© Philips Electronics N.V. 1998
SCA60
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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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Printed in The Netherlands
245106/00/01/pp16
Date of release: 1998 Nov 18
Document order number:
9397 750 03667