Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching applications. PINNING - SOT404 PIN PHB50N03T QUICK REFERENCE DATA SYMBOL PARAMETER VDS ID Ptot Tj RDS(ON) Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V PIN CONFIGURATION MAX. UNIT 30 50 94 175 21 V A W ˚C mΩ SYMBOL DESCRIPTION d mb 1 gate 2 drain 3 source mb drain g 2 1 s 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS VDGR ±VGS ID ID IDM Ptot Tstg, Tj Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage & operating temperature RGS = 20 kΩ Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C - - 55 30 30 20 50 29 200 94 175 V V V A A A W ˚C TYP. MAX. UNIT - 1.6 K/W 50 - K/W MIN. MAX. UNIT - 2 kV THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-mb Thermal resistance junction to mounting base Thermal resistance junction to ambient - Rth j-a pcb mounted, minimum footprint ESD LIMITING VALUE SYMBOL PARAMETER CONDITIONS VC Electrostatic discharge capacitor voltage, all pins Human body model (100 pF, 1.5 kΩ) September 1997 1 Rev 1.100 Philips Semiconductors Product specification TrenchMOS transistor Standard level FET PHB50N03T STATIC CHARACTERISTICS Tj= 25˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-source breakdown voltage Gate threshold voltage VGS = 0 V; ID = 0.25 mA; VGS(TO) Tj = -55˚C VDS = VGS; ID = 1 mA Tj = 175˚C Tj = -55˚C IDSS Zero gate voltage drain current VDS = 30 V; VGS = 0 V; IGSS Gate source leakage current VGS = ±10 V; VDS = 0 V ±V(BR)GSS RDS(ON) Gate source breakdown voltage IG = ±1 mA; Drain-source on-state VGS = 10 V; ID = 25 A resistance Tj = 175˚C Tj = 175˚C Tj = 175˚C MIN. TYP. MAX. UNIT 30 27 2.0 1.0 16 - 3.0 0.05 0.02 19 - 4.0 4.4 10 500 1 20 21 39 V V V V V µA µA µA µA V mΩ mΩ MIN. TYP. MAX. UNIT DYNAMIC CHARACTERISTICS Tj = 25˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS gfs Forward transconductance VDS = 25 V; ID = 25 A 6 19 - S Qg(tot) Qgs Qgd Total gate charge Gate-source charge Gate-drain (Miller) charge ID = 25 A; VDD = 30 V; VGS = 10 V - 28 7 11 - nC nC nC Ciss Coss Crss Input capacitance Output capacitance Feedback capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 974 325 152 - pF pF pF td on tr td off tf Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time VDD = 30 V; ID = 25 A; VGS = 10 V; RG = 10 Ω Resistive load - 10 45 30 32 - ns ns ns ns Ld Ld Internal drain inductance Internal drain inductance - 3.5 4.5 - nH nH Ls Internal source inductance Measured from tab to centre of die Measured from drain lead solder point to centre of die Measured from source lead solder point to source bond pad - 7.5 - nH MIN. TYP. MAX. UNIT - - 50 A IF = 25 A; VGS = 0 V IF = 50 A; VGS = 0 V - 0.95 1.0 200 1.2 - A V IF = 25 A; -dIF/dt = 100 A/µs; VGS = -10 V; VR = 25 V - 100 0.4 - ns µC REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Tj = 25˚C unless otherwise specified SYMBOL PARAMETER IDR IDRM VSD Continuous reverse drain current Pulsed reverse drain current Diode forward voltage trr Qrr Reverse recovery time Reverse recovery charge September 1997 CONDITIONS 2 Rev 1.100 Philips Semiconductors Product specification TrenchMOS transistor Standard level FET PHB50N03T AVALANCHE LIMITING VALUE SYMBOL PARAMETER CONDITIONS WDSS Drain-source non-repetitive unclamped inductive turn-off energy ID = 25 A; VDD ≤ 25 V; VGS = 10 V; RGS = 50 Ω; Tmb = 25 ˚C 120 Normalised Power Derating PD% 1000 MIN. TYP. MAX. UNIT - - 70 mJ PHP50N03T ID, Drain current (Amps) 110 100 D S/I 90 80 = N) 100 VD tp = 10 us S(O RD 70 100 us 60 50 40 1 ms 10 DC 30 10 ms 20 10 Tmb = 25 C 0 0 20 40 60 80 100 Tmb / C 120 140 160 1 180 Fig.1. Normalised power dissipation. PD% = 100⋅PD/PD 25 ˚C = f(Tmb) 120 10 VDS, Drain-source voltage (Volts) 100 Fig.3. Safe operating area. Tmb = 25 ˚C ID & IDM = f(VDS); IDM single pulse; parameter tp Normalised Current Derating ID% 1 10 Transient thermal impedance, Zth j-mb (K/W) PHP50N03T 110 100 90 D= 1 80 0.5 70 0.2 60 50 0.1 0.1 40 30 0.05 0.02 PD tp D= tp T 20 10 0 0 0.01 0 20 40 60 80 100 Tmb / C 120 140 160 180 Fig.2. Normalised continuous drain current. ID% = 100⋅ID/ID 25 ˚C = f(Tmb); conditions: VGS ≥ 5 V September 1997 1us t T 10us 100us 1ms 10ms pulse width, tp (s) 0.1s 1s 10s Fig.4. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T 3 Rev 1.100 Philips Semiconductors Product specification TrenchMOS transistor Standard level FET 50 PHB50N03T ID, Drain current (Amps) 10 V 20 V 40 PHP50N03T Transconductance, gfs (S) 25 6.5 V PHP50N03T VDS = 30 V Tj = 25 C 6V 20 Tj = 25 C 30 15 5.5 V 175 C 20 10 5V 10 5 4.5 V VGS = 4 V 0 0 5 10 15 20 VDS, Drain-Source voltage (Volts) 25 0 30 Fig.5. Typical output characteristics, Tj = 25 ˚C. ID = f(VDS); parameter VGS RDS(on), Drain-Source on resistance (Ohms) 0.06 4.5 V VGS = 4 V 10 20 30 Drain current, ID (A) 40 50 Fig.8. Typical transconductance, Tj = 25 ˚C. gfs = f(ID) PHP50N03T 5V 0 2.5 BUK959-60 Rds(on) normlised to 25degC 5.5 V 0.05 2 0.04 0.03 1.5 Tj = 25 C 0.02 10 V 0.01 20 V 1 0 0 10 20 30 ID, Drain current (Amps) 40 0.5 -100 50 Fig.6. Typical on-state resistance, Tj = 25 ˚C. RDS(ON) = f(ID); parameter VGS 50 Drain current, ID (A) -50 0 50 Tmb / degC 100 150 200 Fig.9. Normalised drain-source on-state resistance. a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 25 A; VGS = 5 V PHP50N03T 5 VGS(TO) / V BUK759-60 VDS = 30 V max. 40 4 30 3 20 2 typ. min. 175 C Tj = 25 C 1 10 0 0 2 4 6 Gate-source voltage, VGS (V) 8 0 -100 10 Fig.7. Typical transfer characteristics. ID = f(VGS); parameter Tj September 1997 -50 0 50 Tj / C 100 150 200 Fig.10. Gate threshold voltage. VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS 4 Rev 1.100 Philips Semiconductors Product specification TrenchMOS transistor Standard level FET PHB50N03T Sub-Threshold Conduction 1E-01 50 Source-Drain diode current, IF(A) PHP50N03T VGS = 0 V 40 1E-02 2% 1E-03 typ 98% 30 175 C 20 1E-04 Tj = 25 C 10 1E-05 0 1E-06 0 1 2 3 4 0 Fig.11. Sub-threshold drain current. ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS 10000 Capacitances, Ciss, Coss, Crss (pF) 0.2 0.4 0.6 0.8 1 Source-Drain voltage, VSDS (V) 5 1.2 1.4 Fig.14. Typical reverse diode current. IF = f(VSDS); parameter Tj PHP50N03T 120 WDSS% 110 100 90 80 70 1000 60 Ciss 50 40 30 Coss 20 10 Crss 100 1 10 Drain-source voltage, VDS (V) 0 20 100 Fig.12. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz 20 VGS, Gate-Source voltage (Volts) 40 60 80 100 120 Tmb / C 140 160 180 Fig.15. Normalised avalanche energy rating. WDSS% = f(Tmb) PHP50N03T VDD = 30 V ID = 25 A Tj = 25 C VDD + L 15 VDS - VGS 10 -ID/100 T.U.T. 0 5 RGS 0 0 10 20 30 40 Qg, Gate charge (nC) 50 60 Fig.16. Avalanche energy test circuit. WDSS = 0.5 ⋅ LID2 ⋅ BVDSS /(BVDSS − VDD ) Fig.13. Typical turn-on gate-charge characteristics. VGS = f(QG); parameter VDS September 1997 R 01 shunt 5 Rev 1.100 Philips Semiconductors Product specification TrenchMOS transistor Standard level FET PHB50N03T MECHANICAL DATA Dimensions in mm 4.5 max 1.4 max 10.3 max Net Mass: 1.4 g 11 max 15.4 2.5 0.85 max (x2) 0.5 2.54 (x2) Fig.17. SOT404 : centre pin connected to mounting base. MOUNTING INSTRUCTIONS Dimensions in mm 11.5 9.0 17.5 2.0 3.8 5.08 Fig.18. SOT404 : soldering pattern for surface mounting. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Epoxy meets UL94 V0 at 1/8". September 1997 6 Rev 1.100 Philips Semiconductors Product specification TrenchMOS transistor Standard level FET PHB50N03T DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1997 7 Rev 1.100