DISCRETE SEMICONDUCTORS DATA SHEET BLF545 UHF push-pull power MOS transistor Product specification October 1992 Philips Semiconductors Product specification UHF push-pull power MOS transistor FEATURES BLF545 PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability • Gold metallization ensures excellent reliability handbook, halfpage 1 • Designed for broadband operation. 4 d g s g DESCRIPTION 5 2 Silicon N-channel enhancement mode vertical D-MOS push-pull transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 4-lead, SOT268 balanced flange envelope, with two ceramic caps. The mounting flange provides the common source connection for the transistors. Top view DESCRIPTION 1 drain 1 2 gate 1 3 gate 2 4 drain 2 5 source MAM395 Fig.1 Simplified outline and symbol. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. WARNING PINNING - SOT268 PIN d 3 Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. QUICK REFERENCE DATA RF performance at Th = 25 °C in a push-pull common source circuit. MODE OF OPERATION CW, class-B October 1992 f (MHz) VDS (V) PL (W) GP (dB) ηD (%) 500 28 40 > 11 > 50 2 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF545 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). Per transistor section unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 65 V ±VGS gate-source voltage − 20 V ID DC drain current − 3.5 A Ptot total power dissipation up to Tmb = 25 °C; total device; − both sections equally loaded 92 W Tstg storage temperature −65 150 °C Tj junction temperature − 200 °C THERMAL RESISTANCE SYMBOL PARAMETER THERMAL RESISTANCE CONDITIONS Rth j-mb thermal resistance from junction to mounting base total device; both sections equally loaded 1.9 K/W Rth mb-h thermal resistance from mounting base to heatsink total device; both sections equally loaded 0.25 K/W MRA995 102 handbook, halfpage MBK463 120 handbook, halfpage Ptot ID (A) (W) 80 (1) 10 (1) (2) (2) 40 1 1 10 VDS (V) 0 102 0 (1) Current in this area may be limited by RDS(on). (2) Tmb = 25 °C. Total device; both sections equally loaded. 80 120 Th ( °C) 160 (1) Short-time operation during mismatch. (2) Continuous operation. Total device; both sections equally loaded. Fig.2 DC SOAR. October 1992 40 Fig.3 Power/temperature derating curves. 3 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF545 CHARACTERISTICS (per section) Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VGS = 0; ID = 10 mA 65 − − V V(BR)DSS drain-source breakdown voltage IDSS drain-source leakage current VGS = 0; VDS = 28 V − − 1 mA IGSS gate-source leakage current ±VGS = 20 V; VDS = 0 − − 1 µA VGS(th) gate-source threshold voltage ID = 40 mA; VDS = 10 V 1 − 4 V gfs forward transconductance ID = 1.2 A; VDS = 10 V 600 900 − mS RDS(on) drain-source on-state resistance ID = 1.2 A; VGS = 10 V − 0.85 1.25 Ω IDSX on-state drain current VGS = 15 V; VDS = 10 V − 4.8 − A Cis input capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 32 − pF Cos output capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 24 − pF Crs feedback capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 6.4 − pF MDA504 4 MDA505 6 handbook, halfpage handbook, halfpage T.C (mV/K) ID (A) 2 4 0 2 −2 −4 10−2 10−1 0 1 ID (A) 10 0 VDS = 10 V. Fig.4 10 15 VGS (V) 20 VDS = 10 V; Tj = 25 °C. Temperature coefficient of gate-source voltage as a function of drain current, typical values per section. October 1992 5 Fig.5 4 Drain current as a function of gate-source voltage, typical values per section. Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF545 MDA506 2 MDA507 100 C (pF) handbook, halfpage handbook, halfpage RDSon (Ω) 1.6 80 1.2 60 0.8 40 0.4 20 Cis Cos 0 0 0 50 100 Tj (°C) 0 150 10 ID = 1.2 A; VGS = 10 V. VGS = 0; f = 1 MHz. Fig.6 Fig.7 Drain-source on-state resistance as a function of junction temperature, typical values per section. MDA508 40 handbook, halfpage Crs (pF) 30 20 10 0 0 10 20 VDS (V) 30 VGS = 0; f = 1 MHz. Fig.8 Feedback capacitance as a function of drain-source voltage, typical values per section. October 1992 5 20 VDS (V) 30 Input and output capacitance as functions of drain-source voltage, typical values per section. Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF545 APPLICATION INFORMATION FOR CLASS-B OPERATION Th = 25 °C; Rth mb-h = 0.25 K/W, unless otherwise specified. RF performance in a common source, class-B, push-pull circuit. MODE OF OPERATION CW, class-B f (MHz) VDS (V) IDQ (mA) PL (W) GP (dB) ηD (%) 500 28 2 × 40 40 > 11 typ. 13 > 50 typ. 60 Ruggedness in class-B operation The BLF545 is capable of withstanding a full load mismatch corresponding to VSWR = 50 through all phases under the following conditions: VDS = 28 V; f = 500 MHz at rated output power. MBK464 24 handbook, halfpage handbook, halfpage ηD (%) Gp (dB) Gp 16 PL (W) 60 40 40 20 20 0 ηD 8 0 20 0 40 PL (W) MBK465 60 80 0 60 2 4 6 PIN (W) 8 Class-B operation; VDS = 28 V; IDQ = 2 × 40 mA; ZL = 4.2 + j6.2 Ω (per section); f = 500 MHz. Class-B operation; VDS = 28 V; IDQ = 2 × 40 mA; ZL = 4.2 + j6.2 Ω (per section); f = 500 MHz. Fig.9 Fig.10 Load power as a function of input power, typical values per section. Power gain and efficiency as functions of load power, typical values per section. October 1992 6 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF545 +VD handbook, full pagewidth R2 R7 C12 C13 C8 C9 R8 L12 C14 ,,, ,,,,, ,,,,,, ,,, ,,, ,,,,, ,,,,,,,,, ,,, ,,,,, ,,,,,,,,, R3 L13 D.U.T. L1 50 Ω input L2 C3 L6 L4 L8 L10 L14 L18 L20 L22 C1 R1 C6 C7 C15 C19 C20 C21 C2 C4 C22 C24 L5 L7 L11 L9 R4 BLF545 L15 L19 L21 L23 L16 C16 C10 R9 L17 C11 +VG C17 R6 C18 R5 +VD f = 500 MHz. Fig.11 Test circuit for class-B operation. October 1992 L24 L25 C5 L3 C23 7 MBK461 L26 50 Ω output Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF545 List of components (class-B test circuit) COMPONENT DESCRIPTION VALUE C1, C2 multilayer ceramic chip capacitor (note 1) 5.1 pF C3, C4 multilayer ceramic chip capacitor (note 1) 16 pF C5, C7, C20, C22 film dielectric trimmer 1.8 to 10 pF C6 multilayer ceramic chip capacitor (note 1) 22 pF C8, C11, C12, C18 multilayer ceramic chip capacitor 100 nF C9, C10, C14, C16 multilayer ceramic chip capacitor (note 1) 390 pF C13, C17 electrolytic capacitor 10 µF, 63 V C15 multilayer ceramic chip capacitor (note 1) 18 pF C19 multilayer ceramic chip capacitor (note 1) 13 pF C21 multilayer ceramic chip capacitor (note 1) 6.2 pF C23, C24 multilayer ceramic chip capacitor (note 1) 10 pF DIMENSIONS CATALOGUE NO. 2222 809 05002 2222 852 47104 L1, L3, L24, L26 stripline (note 2) 50 Ω 56 × 2.4 mm L2, L25 semi-rigid cable (note 3) 50 Ω ext. dia. 2.2 mm ext. conductor length 56 mm L4, L5 stripline (note 2) 56 Ω 13.4 × 2 mm L6, L7 stripline (notes 2 and 4) 56 Ω 9.6 × 2 mm L8, L9 stripline (note 2) 42 Ω 9 × 3 mm L10, L11 stripline (note 2) 42 Ω 6 × 3 mm L12, L17 grade 3B Ferroxcube RF choke L13, L16 4 turns enamelled 1.2 mm copper wire 62 nH length 7.6 mm int. dia. 5 mm leads 2 × 5 mm L14, L15 stripline (note 2) 56 Ω 8 × 2 mm L18, L19 stripline (note 2) 56 Ω 13 × 2 mm L20, L21 stripline (note 2) 56 Ω 18 × 2 mm L22, L23 stripline (note 2) 56 Ω 14 × 2 mm 4312 020 36642 R1 0.4 W metal film resistor 5.11 Ω R2, R5 10 turns cermet potentiometer 50 kΩ R3, R4 0.4 W metal film resistor 10 kΩ 2322 151 71003 R6, R7 0.4 W metal film resistor 205 kΩ 2322 151 72054 R8, R9 1 W metal film resistor 10 Ω 2322 151 71009 Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. October 1992 8 2322 151 75118 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF545 2. The striplines are on a double copper-clad printed circuit board, with glass microfibre reinforced PTFE (εr = 2.2); thickness 1⁄32 inch. 3. Semi-rigid cables L2 and L25 are soldered on to striplines L1 and L26. 4. Striplines L6 and L7 are used in series with a 42 Ω stripline (11 × 3 mm). 82 103 handbook, full pagewidth mounting screw rivet strap 85 mounting screw straps R7 R8 +VD R3 R4 C8 C9 L1 + L2 R3 C1 C3 L4 R1 L5 C2 C4 C5 L6 L7 R4 L8 L9 C12 L24 + L25 L10 L14 L18 C19 C15 L11 L15 L19 L20 C20 L21 C21, C22 L22 C23 L23 C24 L16 C10 C11 L3 L12 C14 L13 C6 C7 R13 C18 C16 L26 L17 R9 R6 +VD R5 R17 MBK462 The circuit and components are situated on one side of the printed circuit board, the other side being fully metallized, to serve as a ground plane. Earth connections are made by means of copper straps and hollow rivets for a direct contact between upper and lower sheets. Dimensions in mm. Fig.12 Component layout for 500 MHz class-B test circuit. October 1992 9 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF545 MDA509 5 MDA510 20 handbook, halfpage handbook, halfpage Zi (Ω) ZL (Ω) ri 0 RL 15 −5 10 XL xi −10 −15 5 0 0 200 400 f (MHz) 600 0 200 400 f (MHz) 600 Class-B operation; VDS = 28 V; IDQ = 2 × 40 mA; PL = 40 W. Class-B operation; VDS = 28 V; IDQ = 2 × 40 mA; PL = 40 W. Fig.13 Input impedance as a function of frequency (series components), typical values per section. Fig.14 Load impedance as a function of frequency (series components), typical values per section. MDA529 30 handbook, halfpage Gp (dB) 20 10 0 0 200 400 f (MHz) 600 Class-B operation; VDS = 28 V; IDQ = 2 × 40 mA; PL = 40 W. Fig.15 Power gain as a function of frequency, typical values per section. October 1992 10 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF545 PACKAGE OUTLINE Flanged double-ended ceramic package; 2 mounting holes; 4 leads SOT268A D A F 5 U1 B q C w2 M C H1 1 H c 4 P U2 E w1 M A B A 2 3 w3 M b Q e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D E e F H H1 p Q q U1 U2 w1 w2 w3 mm 4.91 4.19 1.66 1.39 0.13 0.07 12.96 12.44 6.48 6.22 6.45 2.04 1.77 17.02 16.00 8.23 7.72 3.43 3.17 2.67 2.41 18.42 24.90 24.63 6.61 6.35 0.51 1.02 0.26 inches 0.193 0.165 0.065 0.005 0.055 0.003 0.510 0.490 0.255 0.080 0.670 0.254 0.245 0.070 0.630 0.105 0.725 0.095 0.980 0.970 0.260 0.250 0.02 0.04 0.01 OUTLINE VERSION 0.324 0.135 0.304 0.125 REFERENCES IEC JEDEC EIAJ SOT268A October 1992 EUROPEAN PROJECTION ISSUE DATE 97-06-28 11 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF545 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. October 1992 12