DISCRETE SEMICONDUCTORS DATA SHEET BLF547 UHF push-pull power MOS transistor Product specification October 1992 Philips Semiconductors Product specification UHF push-pull power MOS transistor FEATURES BLF547 PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability • Gold metallization ensures excellent reliability • Designed for broadband operation. 1 2 d2 halfpage g2 5 Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 4-lead, SOT262A2 balanced flange envelope, with two ceramic caps. The mounting flange provides the common source connection for the transistors. DESCRIPTION 1 drain 1 2 drain 2 3 gate 1 4 gate 2 5 source d1 5 3 4 Top view MSB008 MBB157 Fig.1 Simplified outline and symbol. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. WARNING PINNING - SOT262A2 PIN s g1 DESCRIPTION Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. QUICK REFERENCE DATA RF performance at Th = 25 °C in a push-pull common-source test circuit. MODE OF OPERATION CW, class-B October 1992 f (MHz) VDS (V) PL (W) GP (dB) ηD (%) 500 28 100 > 10 > 50 2 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF547 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). Per transistor section unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 65 V ±VGS gate-source voltage − 20 V ID DC drain current − 9 A Ptot total power dissipation 225 W Tstg storage temperature −65 150 °C Ti junction temperature − 200 °C up to Tmb = 25 °C; total device; − both sections equally loaded THERMAL RESISTANCE SYMBOL THERMAL RESISTANCE PARAMETER CONDITIONS Rth j-mb thermal resistance from junction to mounting base Tmb = 25 °C; Ptot = 225 W total device; both sections equally loaded max. 0.78 K/W Rth mb-h thermal resistance from mounting base to heatsink total device; both sections equally loaded max. 0.15 K/W MRA996 102 handbook, halfpage MRB027 250 handbook, halfpage Ptot (W) 200 ID (A) (2) 150 (1) (2) (1) 10 100 50 1 1 10 VDS (V) 0 102 (1) Current in this area may be limited by RDS(on). (2) Tmb = 25 °C; Total device; both sections equally loaded. 20 40 60 80 100 120 Th (oC) (1) Continuous operation. (2) Short-time operation during mismatch. Total device; both sections equally loaded. Fig.2 DC SOAR. October 1992 0 Fig.3 Power/temperature derating curves. 3 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF547 CHARACTERISTICS (per section) Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS V(BR)DSS drain-source breakdown voltage MIN. TYP. MAX. UNIT VGS = 0; ID = 25 mA 65 − − V IDSS drain-source leakage current VGS = 0; VDS = 28 V − − 2.5 mA IGSS gate-source leakage current ±VGS = 20 V; VDS = 0 − − 1 µA VGS(th) gate-source threshold voltage ID = 100 mA; VDS = 10 V 1 − 4 V gfs forward transconductance ID = 3 A; VDS = 10 V 1.5 2.1 − S RDS(on) drain-source on-state resistance ID = 3 A; VGS = 10 V − 0.4 0.5 Ω IDSX on-state drain current VGS = 15 V; VDS = 10 V 10 13 − A Cis input capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 77 85 pF Cos output capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 62 70 pF Crs feedback capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 18 21 pF MRB025 4 MRB024 15 handbook, halfpage handbook, halfpage TC (mV/K) ID (A) 2 10 0 5 −2 −4 10−2 10−1 1 ID (A) 0 10 0 5 15 20 VGS (V) VDS = 10 V. VDS = 10 V; Tj = 25 °C. Fig.4 Fig.5 Temperature coefficient of gate-source voltage as a function of drain current, typical values per section. October 1992 10 4 Drain current as a function of gate-source voltage, typical values per section. Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF547 MRB029 0.8 MRB020 300 handbook, halfpage handbook, halfpage RDS(on) (Ω) C (pF) 0.6 200 0.4 100 Cis 0.2 Cis 0 0 40 80 120 Tj (oC) 0 0 160 10 ID = 3 A; VGS = 10 V. VGS = 0; f = 1 MHz. Fig.6 Fig.7 Drain-source on-state resistance as a function of junction temperature, typical values per section. MRB019 120 handbook, halfpage Crs (pF) 80 40 0 0 10 20 VDS (V) 30 VGS = 0; f = 1 MHz. Fig.8 Feedback capacitance as a function of drain-source voltage, typical values per section. October 1992 5 20 VDS (V) 30 Input and output capacitance as functions of drain-source voltage, typical values per section. Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF547 APPLICATION INFORMATION FOR CLASS-B OPERATION Th = 25 °C; Rth mb-h = 0.15 K/W, unless otherwise specified. RF performance in a common source, push-pull, class-B test circuit. MODE OF OPERATION CW, class-B f (MHz) VDS (V) IDQ (mA) PL (W) GP (dB) ηD (%) 500 28 2 × 100 100 > 10 typ. 12 > 50 typ. 55 Ruggedness in class-B operation The BLF547 is capable of withstanding a load mismatch corresponding to VSWR = 10 through all phases under the following conditions: VDS = 28 V; f = 500 MHz at rated output power. MRB021 25 handbook, halfpage handbook, halfpage η GP (dB) PL (W) (%) 20 MRB028 160 100 80 120 GP 60 15 80 10 40 η 40 20 5 0 20 60 100 PL (W) 0 0 140 0 4 8 12 16 20 PIN (W) Class-B operation; VDS = 28 V; IDQ = 2 × 100 mA; f = 500 MHz; ZL = 1.5 + j1.8 Ω (per section). Class-B operation; VDS = 28 V; IDQ = 2 × 100 mA; f = 500 MHz; ZL = 1.5 + j1.8 Ω (per section). Fig.9 Fig.10 Load power as a function of input power, typical values. Power gain and efficiency as functions of load power, typical values. October 1992 6 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF547 +VD C12 C13 R1 R2 Vbias ,,, ,,, L10 C7 R7 C8 C14 L12 R3 L1 50 Ω input L4 C1 L6 L8 DUT L2 C3 C4 C5 L18 C19 C21 L20 C23 L22 L23 50 Ω output C22 C18 L5 L13 C9 C6 L3 C2 L11 C20 L9 L7 L24 L14 L19 R4 C24 L15 C15 C10 L21 MBC232 C11 R8 L16 Vbias R5 L17 R6 C17 C16 +VD pagewidth f = 500 MHz. Fig.11 Test circuit for class-B operation. List of components (see class-B test circuit) COMPONENT DESCRIPTION VALUE C1, C2 multilayer ceramic chip capacitor (note 1) 15 pF C3 multilayer ceramic chip capacitor (note 1) 16 pF C4 film dielectric trimmer 2 to 9 pF C5 multilayer ceramic chip capacitor (note 2) 15 pF C6, C21, C22 film dielectric trimmer 2 to 18 pF C7, C10, C14, C15 multilayer ceramic chip capacitor (note 1) 390 pF C8, C11, C12, C17 multilayer ceramic chip capacitor 100 nF C9 2 × 68 pF in series October 1992 multilayer ceramic chip capacitor (note 3) 7 DIMENSIONS CATALOGUE NO. 2222 809 09005 2222 809 09006 2222 852 47104 Philips Semiconductors Product specification UHF push-pull power MOS transistor COMPONENT BLF547 DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C13, C16 electrolytic capacitor 10 µF, 63 V C18 multilayer ceramic chip capacitor (note 2) 10 pF C19 multilayer ceramic chip capacitor (note 2) 27 pF C20 multilayer ceramic chip capacitor (note 2) 8.2 pF C23, C24 multilayer ceramic chip capacitor (note 1) 30 pF L1, L3, L22, L24 stripline (note 4) 34.5 Ω length 66.5 mm width 4 mm L2, L23 semi-rigid cable 50 Ω length 66.5 mm width 3.6 mm L4, L5 stripline (note 4) 22.3 Ω length 35 mm width 7 mm L6, L7 stripline (note 4) 22.3 Ω length 10 mm width 7 mm L8, L9 stripline (note 4) 22.3 Ω length 5.5 mm width 7 mm L10, L11, L16, L17 grade 3B Ferroxcube RF choke L12, L15 1 turn enamelled 1.5 mm copper wire 17 nH length 5 mm int. dia. 9 mm leads 2 × 5 mm L13, L14 stripline (note 4) 22.3 Ω length 15 mm width 7 mm L18, L19 stripline (note 4) 22.3 Ω length 36 mm width 7 mm L20, L21 stripline (note 4) 22.3 Ω length 8.5 mm width 7 mm R1, R5 0.4 W metal film resistor 24.7 kΩ R2, R6 10 turn potentiometer 5 kΩ R3, R4 0.4 W metal film resistor 10.5 kΩ 2322 151 71053 R7, R8 1 W metal film resistor 10 Ω 2322 151 71009 2222 030 28109 4312 020 36640 2322 151 72473 Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. American Technical Ceramics (ATC) capacitor, type 175B or other capacitor of the same quality. 3. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality. 4. The striplines are on a double copper-clad printed circuit board, with PTFE fiber-glass dielectric (εr = 2.2), thickness 0.79 mm. October 1992 8 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF547 V DS R2 handbook, full pagewidth L10 R7 L1/L2 C8 C7 C14 R3 C1 L4 C3 C4 C2 L5 C13 L11 L22/L23 C12 L12 L6 C5 C6 C9 L7 L13 C18 C19 L9 L14 L8 C20 C21 C23 L20 L18 C22 L19 L21 C24 L15 R4 C10 C15 L3 C11 L16 R8 C17 L24 C16 L17 V DS R6 MBC231 - 1 200 mm handbook, full pagewidth strap strap strap rivets strap rivets 70 mm strap strap strap strap MBC230 The circuit and components are situated on one side of the printed circuit board, the other side being fully metallized to serve as a ground plane. Connections are made by means of copper straps and hollow rivets for a direct contact between upper and lower sheets. Fig.12 Component layout for 500 MHz class-B test circuit. October 1992 9 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF547 MRB023 2 MRB026 10 ZL (Ω) handbook, halfpage handbook, halfpage Zi (Ω) ri 8 0 6 −2 RL xi 4 XL −4 2 −6 100 200 300 400 0 100 500 200 300 400 f (MHz) f (MHz) 500 Class-B operation; VDS = 28 V; IDQ = 100 mA (per section); PL = 100 W (total device). Class-B operation; VDS = 28 V; IDQ = 100 mA (per section); PL = 100 W (total device). Fig.13 Input impedance as a function of frequency (series components), typical values per section. Fig.14 Load impedance as a function of frequency (series components), typical values per section. MRB022 30 handbook, halfpage GP (dB) 20 handbook, halfpage 10 Zi ZL MBA379 0 100 200 300 400 500 f (MHz) Class-B operation; VDS = 28 V; IDQ = 100 mA (per section); PL = 100 W (total device). Fig.16 Power gain as a function of frequency, typical values per section. Fig.15 Definition of MOS impedance. October 1992 10 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF547 PACKAGE OUTLINE Flanged double-ended ceramic package; 2 mounting holes; 4 leads SOT262A2 D A F U1 B q C w2 M C H1 1 H c 2 E1 p U2 5 E w1 M A B A 3 4 w3 M b Q e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 5.39 4.62 5.85 5.58 0.16 0.10 inches 0.212 0.182 0.230 0.006 0.220 0.004 OUTLINE VERSION D F H H1 p Q q U1 U2 w1 w2 w3 21.98 10.27 10.29 11.05 21.71 10.05 10.03 1.78 1.52 20.58 20.06 17.02 16.51 3.28 3.02 2,47 2.20 27.94 34.17 33.90 9.91 9.65 0.51 1.02 0.25 0.865 0.404 0.405 0.435 0.855 0.395 0.396 0.070 0.060 0.81 0.79 0.67 0.65 0.129 0.119 0.097 1.100 0.087 1.345 1.335 0.390 0.380 0.02 0.04 0.01 e E E1 REFERENCES IEC JEDEC EIAJ SOT262A2 October 1992 EUROPEAN PROJECTION ISSUE DATE 97-06-28 11 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF547 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. October 1992 12