1PS10SB82 Schottky barrier diode

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D891
BOTTOM VIEW
1PS10SB82
Schottky barrier diode
Product data sheet
2003 Aug 20
NXP Semiconductors
Product data sheet
Schottky barrier diode
1PS10SB82
FEATURES
DESCRIPTION
• Low forward voltage
An epitaxial Schottky barrier diode encapsulated in a
SOD882 leadless ultra small plastic package.
• Low diode capacitance
• Leadless ultra small plastic package
(1.0 mm × 0.6 mm × 0.5 mm)
ESD sensitive device, observe handling precautions.
• Boardspace 1.17 mm2 (approx. 10% of SOT23)
• Power dissipation comparable to SOT23.
handbook, halfpage
APPLICATIONS
• UHF mixers
Bottom view
MDB391
• Sampling circuits
• Modulators
Marking code: S5.
The marking bar indicates the cathode.
• Phase detectors
• Mobile communication, digital (still) cameras, PDA’s and
PCMCIA cards.
Fig.1 Simplified outline (SOD882), pin
configuration and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VR
continuous reverse voltage
−
15
V
IF
continuous forward current
−
30
mA
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
2003 Aug 20
2
NXP Semiconductors
Product data sheet
Schottky barrier diode
1PS10SB82
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
VF
PARAMETER
forward voltage
CONDITIONS
TYP.
MAX.
UNIT
see Fig.2
IF = 1 mA
−
340
mV
IF = 30 mA
−
700
mV
rD
differential diode forward resistance
f = 1 MHz; IF = 5 mA; see Fig.5
12
−
Ω
IR
continuous reverse current
VR = 1 V; see Fig.3; note 1
−
0.2
μA
Cd
diode capacitance
VR = 0 V; f = 1 MHz; see Fig.4
1
−
pF
Note
1. Pulse test: tp = 300 μs; δ = 0.02.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
note 1
Note
1. Refer to SOD882 standard mounting conditions (footprint), FR4 with 60 μm copper strip line.
Soldering
Reflow soldering is the only recommended soldering method.
2003 Aug 20
3
VALUE
UNIT
500
K/W
NXP Semiconductors
Product data sheet
Schottky barrier diode
1PS10SB82
GRAPHICAL DATA
MLE112
103
handbook, halfpage
MLE113
103
handbook, halfpage
IR
(μA)
IF
(mA)
102
(2)
(1)
102
(3)
(1)
10
(2)
1
10
(3)
10−1
(1)
(2)
1
(3)
0
0.4
0.8
1.2
VF (V)
10−2
1.6
0
5
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
Fig.2
Fig.3
Forward current as a function of forward
voltage; typical values.
MLE114
1.2
10
Cd
(pF)
15
Reverse current as a function of reverse
voltage; typical values.
MLE115
103
handbook, halfpage
handbook, halfpage
VR (V)
rD
(Ω)
1
102
0.8
10
0.6
1
10−1
0.4
0
2
4
6
8
VR (V)
10
f = 1 MHz; Tamb = 25 °C.
f = 1 MHz; Tamb = 25 °C.
Fig.4
Fig.5
Diode capacitance as a function of reverse
voltage; typical values.
2003 Aug 20
4
1
10
IF (mA)
102
Differential diode forward resistance as a
function of forward current; typical values.
NXP Semiconductors
Product data sheet
Schottky barrier diode
1PS10SB82
PACKAGE OUTLINE
Leadless ultra small plastic package; 2 terminals; body 1.0 x 0.6 x 0.5 mm
L
SOD882
L
1
2
b
e1
A
A1
E
D
(2)
0
0.5
1 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A (1)
A1
max.
b
D
E
e1
L
mm
0.50
0.46
0.03
0.55
0.47
0.62
0.55
1.02
0.95
0.65
0.30
0.22
Notes
1. Including plating thickness
2. The marking bar indicates the cathode
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
JEITA
ISSUE DATE
03-04-16
03-04-17
SOD882
2003 Aug 20
EUROPEAN
PROJECTION
5
NXP Semiconductors
Product data sheet
Schottky barrier diode
1PS10SB82
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
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does not give any representations or warranties,
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2003 Aug 20
6
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
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Printed in The Netherlands
613514/01/pp7
Date of release: 2003 Aug 20
Document order number: 9397 750 11309