DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D050 BAT86 Schottky barrier diode Product data sheet Supersedes data of 1996 Mar 20 2000 May 25 NXP Semiconductors Product data sheet Schottky barrier diode BAT86 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode with an integrated protection ring against static discharges, encapsulated in a hermetically-sealed subminiature SOD68 (DO-34) package. The diode is suitable for mounting on a 2 E (5.08 mm) pitch. • Guard ring protected • Hermetically-sealed leaded glass package. APPLICATIONS k handbook, halfpage a • Ultra high-speed switching • Voltage clamping MAM193 • Protection circuits Fig.1 Simplified outline (SOD68; DO-34) and symbol. • Blocking diodes. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VR continuous reverse voltage − 50 V IF continuous forward current − 200 mA IF(AV) average forward current PCB mounting, lead length = 4 mm; − VRWM = 25 V; a = 1.57; δ = 0.5; Tamb = 50 °C; see Fig.2 200 mA IFRM repetitive peak forward current tp ≤ 1 s; δ ≤ 0.5 − 500 mA IFSM non-repetitive peak forward current tp ≤ 10 ms − 5 A Tstg storage temperature −65 +150 °C Tj junction temperature − 125 °C Tamb operating ambient temperature −65 +125 °C 2000 May 25 2 NXP Semiconductors Product data sheet Schottky barrier diode BAT86 ELECTRICAL CHARACTERISTICS Tamb = 25 °C; unless otherwise specified. SYMBOL VF PARAMETER forward voltage CONDITIONS MAX. UNIT see Fig.3 IF = 0.1 mA 300 mV IF = 1 mA 380 mV IF = 10 mA 450 mV IF = 30 mA 600 mV IF = 100 mA 900 mV IR reverse current VR = 40V; see Fig.4; note 1 5 μA trr reverse recovery time when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.6 4 ns Cd diode capacitance f = 1 MHz; VR = 1 V; see Fig.5 8 pF Note 1. Pulsed test: tp = 300 μs; δ = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 Note 1. Refer to SOD68 standard mounting conditions. 2000 May 25 3 VALUE UNIT 320 K/W NXP Semiconductors Product data sheet Schottky barrier diode BAT86 GRAPHICAL DATA MRA540 MLD357 103 handbook, halfpage 250 handbook, halfpage I F(AV) IF (mA) (mA) 200 (1) (2) (3) 102 150 10 100 (1) (2) (3) 1 50 0 0 50 100 10−1 150 0 0.4 0.8 o Tamb ( C) VF (V) 1.2 (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. Fig.3 Forward current as a function of forward voltage; typical values. Fig.2 Derating curve. MGC686 5 10halfpage handbook, I R (nA) 10 MGC687 12 handbook, halfpage (1) Cd (pF) 4 (2) 10 3 8 10 2 10 4 (3) 1 10 −1 0 0 10 20 30 40 0 50 10 VR (V) 30 40 50 VR (V) (1) Tamb = 85 °C. (2) Tamb = 25 °C. (3) Tamb = −40 °C. f = 1 MHz. Fig.4 Fig.5 Reverse current as a function of reverse voltage; typical values. 2000 May 25 20 4 Diode capacitance as a function of reverse voltage; typical values. NXP Semiconductors Product data sheet Schottky barrier diode BAT86 handbook, halfpage I F dI F dt 10% t Qr 90% IR tf MRC129 - 1 Fig.6 Reverse recovery definitions. 2000 May 25 5 NXP Semiconductors Product data sheet Schottky barrier diode BAT86 PACKAGE OUTLINE Hermetically sealed glass package; axial leaded; 2 leads SOD68 (1) b D G1 L L DIMENSIONS (mm are the original dimensions) UNIT b max. D max. G1 max. L min. mm 0.55 1.6 3.04 25.4 0 2 4 mm scale Note 1. The marking band indicates the cathode. OUTLINE VERSION SOD68 2000 May 25 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-06-09 DO-34 6 NXP Semiconductors Product data sheet Schottky barrier diode BAT86 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. 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Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2000 May 25 7 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/02/pp8 Date of release: 2000 May 25 Document order number: 9397 750 07026