PHILIPS PMBF5484

DISCRETE SEMICONDUCTORS
DATA SHEET
PMBF5484; PMBF5485;
PMBF5486
N-channel field-effect transistors
Product specification
File under Discrete Semiconductors, SC07
April 1995
Philips Semiconductors
Product specification
PMBF5484;
PMBF5485; PMBF5486
N-channel field-effect transistors
FEATURES
• Low noise
• Interchangeability of drain and
source connections
• High gain.
handbook, halfpage
3
DESCRIPTION
g
N-channel, symmetrical, silicon
junction FETs in a surface-mountable
SOT23 envelope. Intended for use in
VHF/UHF amplifiers, oscillators and
mixers.
1
d
s
2
Top view
MAM385
PINNING - SOT23
PIN
DESCRIPTION
1
source
2
drain
3
gate
MARKING CODES:
PMBF5484: p6B
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
MIN.
MAX. UNIT
−
25
V
PMBF5484
1
5
mA
PMBF5485
4
10
mA
8
20
mA
−
250
mW
VDS
drain-source
voltage
IDSS
drain current
PMBF5485: p6M
PMBF5486: p6H
PARAMETER
CONDITIONS
VDS = 15 V; VGS = 0
PMBF5486
Ptot
total power
dissipation
up to Tamb = 25 °C
VGS(off)
gate-source cut-off
voltage
VDS = 15 V;
ID = 1 nA
 Yfs 
April 1995
PMBF5484
−0.3
−3
V
PMBF5485
−0.5
−4
V
PMBF5486
−2
−6
V
PMBF5484
3
6
mS
PMBF5485
3.5
7
mS
PMBF5486
4
8
mS
common source
transfer admittance
2
VDS = 15 V;
VGS = 0; f = 1 kHz
Philips Semiconductors
Product specification
PMBF5484; PMBF5485;
PMBF5486
N-channel field-effect transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
−
25
V
VGSO
gate-source voltage
−
−25
V
VGDO
gate-drain voltage
−
−25
V
IG
DC forward gate current
Ptot
total power dissipation
Tstg
Tj
−
10
mA
−
250
mW
storage temperature
−65
+150
°C
junction temperature
−
150
°C
up to Tamb = 25 °C (note 1)
THERMAL RESISTANCE
SYMBOL
Rth j-a
PARAMETER
THERMAL RESISTANCE
from junction to ambient (note 1)
500 K/W
Note
1. Device mounted on an FR4 printed-circuit board.
STATIC CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
V(BR)GSS
gate-source breakdown voltage
VDS = 0; IG = −1 µA
IDSS
drain current
VDS = 15 V; VGS = 0
MIN.
MAX.
UNIT
−25
−
V
PMBF5484
1
5
mA
PMBF5485
4
10
mA
8
20
mA
IGSS
reverse gate leakage current
PMBF5486
VDS = 0; VGS = −15 V
−
−1
nA
VGSS
gate-source forward voltage
VDS = 0; IG = 1 mA
−
1
V
VGS(off)
gate-source cut-off voltage
VDS = 15 V; ID = 1 nA
PMBF5484
−0.3
−3
V
PMBF5485
−0.5
−4
V
PMBF5486
−2
−6
V
PMBF5484
3
6
mS
PMBF5485
3.5
7
mS
4
8
mS
PMBF5484
−
50
µS
PMBF5485
−
60
µS
PMBF5486
−
75
µS
 Yfs 
common source transfer admittance
VDS = 15 V; VGS = 0
PMBF5486
 Yos 
April 1995
common source output admittance
VDS = 15 V; VGS = 0
3
Philips Semiconductors
Product specification
PMBF5484; PMBF5485;
PMBF5486
N-channel field-effect transistors
DYNAMIC CHARACTERISTICS
Tj = 25 °C; VDS = 15 V; VGS = 0
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Cis
input capacitance
f = 1 MHz
−
−
5
pF
Cos
output capacitance
f = 1 MHz
−
−
2
pF
Crs
feedback capacitance
f = 1 MHz
−
−
1
pF
gis
common source input conductance
gfs
PMBF5484
f = 100 MHz
100
−
−
µS
PMBF5485; PMBF5486
f = 400 MHz
−
−
1
mS
PMBF5484
f = 100 MHz
2.5
−
−
mS
PMBF5485
f = 400 MHz
3
−
1
mS
PMBF5486
f = 400 MHz
3.5
−
1
mS
PMBF5484
f = 100 MHz
−
−
75
µS
PMBF5485; PMBF5486
f = 400 MHz
−
−
100
µS
f = 100 Hz
−
5
−
nV/√Hz
common source transfer conductance
gos
common source output conductance
Vn
equivalent input noise voltage
MRC168
handbook,25
halfpage
MRC169
handbook, 10
halfpage
I DSS
Y fs
(mS)
(mA)
20
8
15
6
10
4
5
2
0
0
2
0
4
6
–VGS(off) (V)
0
2
4
VDS = 15 V; Tj = 25 °C; typical values.
VDS = 15 V; Tj = 25 °C; typical values.
Fig.2
Fig.3
April 1995
6
–VGS(off) (V)
Drain current as a function of gate-source
cut-off voltage.
4
Common source transfer admittance as a
function of gate-source cut-off voltage.
Philips Semiconductors
Product specification
PMBF5484; PMBF5485;
PMBF5486
N-channel field-effect transistors
MRC167
handbook, halfpage
2
handbook, halfpage
Gos
( µ S)
ID
(mA)
80
60
1.5
40
1
20
0.5
0
0
1
2
3
4
5
0
6
MRC170
VGS = 0 V
–0.25 V
–0.5 V
0
4
8
12
PMBF5484
Tj = 25 °C.
VDS = 15 V; Tj = 25 °C; typical values.
Fig.4
16
VDS (V)
–VGS(off) (V)
Common source output conductance as a
function of gate-source cut-off voltage.
Fig.5 Typical output characteristics.
MRC171
8
MRC172
8
handbook, halfpage
handbook, halfpage
ID
(mA)
V
=0V
GS
ID
(mA)
V
=0V
GS
6
6
–0.5 V
–1V
4
4
–1 V
–2 V
2
2
–1.5 V
0
0
0
4
8
12
0
4
16
V
(V)
DS
PMBF5485
Tj = 25 °C.
12
VDS (V)
PMBF5486
Tj = 25 °C.
Fig.6 Typical output characteristics.
April 1995
8
Fig.7 Typical output characteristics.
5
16
Philips Semiconductors
Product specification
PMBF5484; PMBF5485;
PMBF5486
N-channel field-effect transistors
MRC173
MRC165
4
handbook,10
halfpage
handbook, halfpage
–I G
16
(pA)
PMBF5486
ID
(mA)
12
I D = 1 mA
10 3
10
2
10
0.1 mA
PMBF5485
8
1
I GSS
4
–1
10
PMBF5484
0
–1.6
–2
10
–1.2
–0.8
–0.4
0
0
4
8
12
VGS (V)
VDS = 15 V; Tj = 25 °C.
16
20
VDG (V)
Tj = 25 °C.
Fig.8 Typical input characteristics.
Fig.9
MRC166
300
handbook,
halfpage
Gate current as a function of drain-gate
voltage, typical values.
MRC158
1
handbook, halfpage
C rs
(pF)
Ptot
(mW)
0.8
200
0.6
0.4
100
0.2
00
50
100
o
Tamb ( C)
0
–10
150
–8
–6
–4
–2
0
VGS (V)
VDS = 15 V; Tj = 25 °C.
Fig.10 Power derating curve.
April 1995
Fig.11 Typical feedback capacitance.
6
Philips Semiconductors
Product specification
PMBF5484; PMBF5485;
PMBF5486
N-channel field-effect transistors
MRC157
MRC160
handbook,100
halfpage
3.5
handbook,
halfpage
Cis
(pF) 3
gis , b is
(mS)
10
2.5
b is
2
1
g is
1.5
1
0.1
0.5
0
–10
–8
–6
–4
0.01
10
–2
0
VGS (V)
100
f (MHz)
1000
VDS = 15 V; VGS = 0; Tamb = 25 °C; typical values.
VDS = 15 V; Tj = 25 °C.
Fig.12 Typical input capacitance.
Fig.13 Common source input conductance.
MRC159
100
MRC162
handbook,100
halfpage
handbook, halfpage
–g rs , –brs
g fs , –bfs
(mS)
(mS)
10
–brs
10
g fs
1
0.1
–b fs
1
–g rs
0.01
0.1
10
100
0.001
10
1000
f (MHz)
f (MHz)
1000
VDS = 15 V; VGS = 0; Tamb = 25 °C; typical values.
VDS = 15 V; VGS = 0; Tamb = 25 °C; typical values.
Fig.14 Common source transfer conductance.
April 1995
100
Fig.15 Common source feedback conductance.
7
Philips Semiconductors
Product specification
PMBF5484; PMBF5485;
PMBF5486
N-channel field-effect transistors
MRC161
100
handbook, halfpage
gos , bos
(mS)
10
b os
1
0.1
g os
0.01
10
100
f (MHz)
1000
VDS = 15 V; VGS = 0; Tamb = 25 °C; typical values.
Fig.16 Common source output conductance.
April 1995
8
Philips Semiconductors
Product specification
PMBF5484; PMBF5485;
PMBF5486
N-channel field-effect transistors
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-02-28
SOT23
April 1995
EUROPEAN
PROJECTION
9
Philips Semiconductors
Product specification
PMBF5484; PMBF5485;
PMBF5486
N-channel field-effect transistors
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Short-form specification
The data in this specification is extracted from a full data sheet with the same type
number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
April 1995
10