DISCRETE SEMICONDUCTORS DATA SHEET BF545A; BF545B; BF545C N-channel silicon junction field-effect transistors Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 29 Philips Semiconductors Product specification N-channel silicon junction field-effect transistors BF545A; BF545B; BF545C FEATURES • Low leakage level (typ. 500 fA) • High gain • Low cut-off voltage (max. 2.2 V for BF545A). handbook, halfpage 2 APPLICATIONS 1 • Impedance converters in e.g. electret microphones and infra-red detectors d g s • VHF amplifiers in oscillators and mixers. 3 DESCRIPTION Top view MAM036 N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. PINNING - SOT23 PIN SYMBOL 1 s source 2 d drain 3 g gate Marking codes: BF545A: M65. BF545B: M66. BF545C: M67. DESCRIPTION Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT − ±30 V −0.4 −7.8 V 2 6.5 mA BF545B 6 15 mA BF545C 12 25 mA VDS drain-source voltage VGSoff gate-source cut-off voltage ID = 1 µA; VDS = 15 V IDSS drain current VGS = 0; VDS = 15 V BF545A Ptot total power dissipation up to Tamb = 25 °C − 250 mW yfs forward transfer admittance VGS = 0; VDS = 15 V 3 6.5 mS 1996 Jul 29 2 Philips Semiconductors Product specification N-channel silicon junction field-effect transistors BF545A; BF545B; BF545C LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − ±30 V VGSO gate-source voltage open drain − −30 V VGDO gate-drain voltage (DC) open source − −30 V IG forward gate current (DC) − 10 mA Ptot total power dissipation − 250 mW Tstg storage temperature −65 150 °C Tj operating junction temperature − 150 °C up to Tamb = 25 °C; note 1 Note 1. Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead 10 mm2. MBB688 400 handbook, halfpage Ptot (mW) 300 200 100 0 0 50 100 150 200 Tamb (°C) Fig.2 Power derating curve. 1996 Jul 29 3 Philips Semiconductors Product specification N-channel silicon junction field-effect transistors BF545A; BF545B; BF545C THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER VALUE UNIT 500 K/W thermal resistance from junction to ambient; note 1 Note 1. Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead 10 mm2. STATIC CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS V(BR)GSS gate-source breakdown voltage IG = −1 µA; VDS = 0 VGSoff gate-source cut-off voltage MAX. UNIT − − V BF545A −0.4 − −2.2 V BF545B −1.6 − −3.8 V −3.2 − −7.8 V −0.4 − −7.5 V BF545A 2 − 6.5 mA BF545B 6 − 15 mA BF545C 12 − 25 mA VGS = −20 V; VDS = 0 − −0.5 −1000 pA VGS = −20 V; VDS = 0; Tj = 125 °C − − −100 nA ID = 200 µA; VDS = 15 V ID = 1 µA; VDS = 15 V IGSS TYP. −30 BF545C IDSS MIN. drain current gate leakage current VGS = 0; VDS = 15 V yfs forward transfer admittance VGS = 0; VDS = 15 V 3 − 6.5 mS yos common source output admittance VGS = 0; VDS = 15 V − 40 − µS 1996 Jul 29 4 Philips Semiconductors Product specification N-channel silicon junction field-effect transistors BF545A; BF545B; BF545C DYNAMIC CHARACTERISTICS Tamb = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS TYP. UNIT Cis input capacitance VDS = 15 V; VGS = −10 V; f = 1 MHz 1.7 pF VDS = 15 V; VGS = 0; f = 1 MHz 3 pF Crs reverse transfer capacitance VDS = 15 V; VGS = −10 V; f = 1 MHz 0.8 pF VDS = 15 V; VGS = 0; f = 1 MHz 0.9 pF 15 µS VDS = 10 V; ID = 1 mA; f = 450 MHz 300 µS common source input conductance VDS = 10 V; ID = 1 mA; f = 100 MHz gis gfs common source transfer conductance VDS = 10 V; ID = 1 mA; f = 100 MHz 2 mS VDS = 10 V; ID = 1 mA; f = 450 MHz 1.8 mS grs common source reverse conductance VDS = 10 V; ID = 1 mA; f = 100 MHz −6 µS VDS = 10 V; ID = 1 mA; f = 450 MHz −40 µS common source output conductance VDS = 10 V; ID = 1 mA; f = 100 MHz 30 µS VDS = 10 V; ID = 1 mA; f = 450 MHz 60 µS gos MBB467 30 MBB466 6 handbook, halfpage handbook, halfpage IDSS (mA) Yfs (mS) 20 5 10 0 0 −2 −4 4 −6 −8 VGSoff (V) 0 −2 −4 −6 −8 VGSoff (V) VDS = 15 V; VGS = 0; Tj = 25 °C. VDS = 15 V; Tj = 25 °C. Fig.4 Fig.3 1996 Jul 29 Drain current as a function of gate-source cut-off voltage; typical values. 5 Forward transfer admittance as a function of gate-source cut-off voltage; typical values. Philips Semiconductors Product specification N-channel silicon junction field-effect transistors BF545A; BF545B; BF545C MBB465 80 MBB464 300 handbook, halfpage handbook, halfpage RDSon (Ω) Yos (µS) 200 40 100 0 0 −2 −4 0 −6 −8 VGSoff (V) VDS = 15 V; VGS = 0; Tj = 25 °C. Fig.5 −6 −8 VGSoff (V) −4 −2 0 VDS = 100 mV; VGS = 0; Tj = 25 °C. Common-source output admittance as a function of gate-source cut-off voltage; typical values. Fig.6 Drain-source on-resistance as a function of gate-source cut-off voltage; typical values. MBB462 6 MBB463 6 handbook, halfpage handbook, halfpage ID (mA) ID (mA) VGS = 0 V 4 4 −0.5 V 2 2 −1.0 V 0 0 4 8 12 VDS (V) 0 −3 16 Tj = 25 °C. −1 VGS (V) 0 VDS = 15 V; Tj = 25 °C. Fig.7 Typical output characteristics; BF545A. 1996 Jul 29 −2 Fig.8 Typical input characteristics; BF545A. 6 Philips Semiconductors Product specification N-channel silicon junction field-effect transistors BF545A; BF545B; BF545C MBB460 16 MBB459 16 handbook, halfpage handbook, halfpage ID (mA) ID (mA) VGS = 0 V 12 12 −0.5 V −1 V 8 8 −1.5 V −2 V 4 4 −2.5 V 0 −6 0 0 4 8 12 V 16 DS (V) Tj = 25 °C. −4 −2 VGS (V) 0 VDS = 15 V; Tj = 25 °C. Fig.9 Typical output characteristics; BF545B. Fig.10 Typical input characteristics; BF545B. MBB457 30 MBB456 30 handbook, halfpage handbook, halfpage ID (mA) ID (mA) VGS = 0 V 20 20 −1 V −2 V 10 10 −3 V −4 V −5 V 0 −8 0 0 4 8 12 VDS (V) 16 Tj = 25 °C. −4 −2 VGS (V) 0 VDS = 15 V; Tj = 25 °C. Fig.11 Typical output characteristics; BF545C. 1996 Jul 29 −6 Fig.12 Typical input characteristics; BF545C. 7 Philips Semiconductors Product specification N-channel silicon junction field-effect transistors BF545A; BF545B; BF545C MBB461 103 handbook, halfpage I MBB458 103 handbook, halfpage I D (µA) 102 D (µA) 102 10 10 1 1 10−1 10−1 10−2 10−2 10−3 −3 −2 −1 VGS (V) 10−3 −6 0 VDS = 15 V; Tj = 25 °C. −4 −2 VGS (V) 0 VDS = 15 V; Tj = 25 °C. Fig.13 Drain current as a function of gate-source voltage; typical values for BF545A. Fig.14 Drain current as a function of gate-source voltage; typical values for BF545B. MBB455 103 handbook, halfpage I MBB454 −102 handbook, halfpage D (µA) 102 IG (pA) ID = 10 mA −10 10 1 mA −1 1 IGSS 10−1 −10−1 0.1 mA 10−2 10−3 −8 −6 −4 −2 VGS (V) −10−2 0 0 VDS = 15 V; Tj = 25 °C. VDG (V) 20 ID = 10 mA only for BF545B and BF545C; Tj = 25 °C. Fig.15 Drain current as a function of gate-source voltage; typical values for BF545C. 1996 Jul 29 10 Fig.16 Gate current as a function of drain-gate voltage; typical values. 8 Philips Semiconductors Product specification N-channel silicon junction field-effect transistors BF545A; BF545B; BF545C MBB453 −103 handbook, halfpage MBB452 1 handbook, halfpage IGSS (pA) −102 Crs (pF) −10 0.5 −1 −10−1 −50 0 50 100 Tj (°C) 0 −10 150 VDS = 0; VGS = −20 V. −5 0 VGS (V) VDS = 15 V; Tj = 25 °C. Fig.17 Gate current as a function of junction temperature; typical values. Fig.18 Reverse transfer capacitance as a function of gate-source voltage; typical values. MBB451 3 MBB468 102 handbook, halfpage handbook, halfpage yis (mS) Cis (pF) 10 2 bis 1 1 gis 10−1 0 −10 −5 VGS (V) 10−2 10 0 102 f (MHz) 103 VDS = 10 V; ID = 1 mA; Tamb = 25 °C. VDS = 15 V; Tj = 25 °C. Fig.20 Common-source input admittance; typical values. Fig.19 Typical input capacitance. 1996 Jul 29 9 Philips Semiconductors Product specification N-channel silicon junction field-effect transistors BF545A; BF545B; BF545C MBB469 10 2 handbook, halfpage MBB470 10 handbook, halfpage yrs (mS) Yfs (mS) −brs 1 10 10−1 g fs 1 10 –1 10 102 f (MHz) 10−3 10 103 VDS = 10 V; ID = 1 mA; Tamb = 25 °C. f (MHz) 103 Fig.22 Common-source reverse transfer admittance; typical values. MBB471 10 handbook, halfpage yos (mS) 1 bos 10−1 gos 102 f (MHz) 103 VDS = 10 V; ID = 1 mA; Tamb = 25 °C. Fig.23 Common-source output admittance; typical values. 1996 Jul 29 102 VDS = 10 V; ID = 1 mA; Tamb = 25 °C. Fig.21 Common-source forward transfer admittance; typical values. 10−2 10 −grs 10−2 –b fs 10 Philips Semiconductors Product specification N-channel silicon junction field-effect transistors BF545A; BF545B; BF545C PACKAGE OUTLINE 3.0 2.8 handbook, full pagewidth 0.55 0.45 0.150 0.090 B 1.9 0.95 2 1 0.1 max 10 o max 0.2 M A A 1.4 1.2 2.5 max 10 o max 3 1.1 max 30 o max 0.48 0.38 0.1 M A B TOP VIEW Dimensions in mm. Fig.24 SOT23. 1996 Jul 29 11 MBC846 Philips Semiconductors Product specification N-channel silicon junction field-effect transistors BF545A; BF545B; BF545C DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Jul 29 12