INTEGRATED CIRCUITS DATA SHEET TDA1300T; TDA1300TT Photodetector amplifiers and laser supplies Preliminary specification Supersedes data of 1995 Nov 16 File under Integrated Circuits, IC01 1997 Jul 15 Philips Semiconductors Preliminary specification Photodetector amplifiers and laser supplies TDA1300T; TDA1300TT FEATURES GENERAL DESCRIPTION • Six input buffer amplifiers with low-pass filtering with virtually no offset The TDA1300 is an integrated data amplifier and laser supply for three beam pick-up detectors applied in a wide range of mechanisms for Compact Disc (CD) and read only optical systems. It offers 6 amplifiers which amplify and filter the focus and radial diode signals adequately and provides an equalized RF signal for single or double speed mode which can be switched by means of the speed control pin. • HF data amplifier with a high or low gain mode • Two built-in equalizers for single or double speed mode ensuring high playability in both modes • Full automatic laser control including stabilization and an on/off switch and containing a separate supply VDDL for power reduction The device can handle astigmatic, single Foucault and double Foucault detectors and is applicable with all N-sub lasers and N-sub or P-sub monitor diode units. • Applicable with N-sub laser with N-sub or P-sub monitor diode • Adjustable laser bandwidth and laser switch-on current slope After a single initial adjustment the circuit keeps control over the laser diode current resulting in a constant light output power independent of ageing. The chip is mounted in a small SO24 or TSSOP24 package enabling mounting close to the laser pick-up unit on the sledge. • Protection circuit preventing laser damage due to supply voltage dip • Optimized interconnect between pick-up detector and TDA1301 • Wide supply voltage range • Wide temperature range • Low power consumption. QUICK REFERENCE DATA SYMBOL VDD PARAMETER CONDITIONS supply voltage MIN. 3 TYP. − MAX. UNIT 5.5 V Diode current amplifiers (n = 1 to 6) Gd(n) diode current gain 1.43 1.55 1.67 IO(d) diode offset current − − 100 nA B 3 dB bandwidth Ii(d) = 1.67 µA 50 − − kHz RFE amplifier (built-in equalizer) td(eq) equalization delay fi = 0.3 MHz − 320 − ns td(f) flatness delay double speed − 5 − ns output current VDDL = 3 V − − −100 mA Laser supply Io(L) ORDERING INFORMATION TYPE NUMBER TDA1300T TDA1300TT 1997 Jul 15 PACKAGE NAME SO24 TSSOP24 DESCRIPTION VERSION plastic small outline package; 24 leads; body width 7.5 mm SOT137-1 plastic thin shrink small outline package; 24 leads; body width 4.4 mm SOT355-1 2 Philips Semiconductors Preliminary specification Photodetector amplifiers and laser supplies TDA1300T; TDA1300TT BLOCK DIAGRAM handbook, full pagewidth I6 I5 I4 I3 I2 I1 23 I6in 20 I5in 24 I4in 22 I3in 19 I2in 21 I1in 6 1.5x 5 1.5x 4 1.5x 3 1.5x 2 1.5x 1 1.5x Id6out Id5out Id4out Id3out Id2out Id1out 5 1 3 6 4 O6 O5 O4 O3 O2 O1 TDA1300T 95, 120, 134 or 240 kΩ Ii(central) 2 −4 I/V HG LS 11 9 12 10 ADJ 14 VDD (N-sub) or IADJ (P-sub) VDD GND 17 Vmon (N-sub) or Imon (P-sub) OTA ILO 16 VDDL LO 18 15 ON/OFF SUPPLY 7 13 CL Fig.1 Block diagram. 1997 Jul 15 RF Vgap 8 MI RFE 3 MBG474 LDON Philips Semiconductors Preliminary specification Photodetector amplifiers and laser supplies TDA1300T; TDA1300TT PINNING SYMBOL PIN DESCRIPTION O4 1 current amplifier 4 output O6 2 current amplifier 6 output O3 3 current amplifier 3 output O1 4 current amplifier 1 output O5 5 current amplifier 5 output O4 1 24 I4 O2 6 current amplifier 2 output O6 2 23 I6 LDON 7 control pin for switching the laser on and off O3 3 22 I3 VDDL 8 laser supply voltage O1 4 21 I1 RFE 9 equalized output voltage of sum signal of amplifiers 1 to 4 O5 5 20 I5 O2 6 RF 10 unequalized output HG 11 control pin for gain switch LS 12 control pin for speed switch CL 13 external capacitor ADJ 14 P-sub monitor (if connected via resistor to GND); N-sub monitor (if connected to VDD) GND 15 ground (substrate connection) LO 16 laser output; current output MI 17 monitor diode input (laser) VDD 18 supply I2 19 photo detector input 2 (central) I5 20 photo detector input 5 (satellite) I1 21 photo detector input 1 (central) I3 22 photo detector input 3 (central) I6 23 photo detector input 6 (satellite) I4 24 photo detector input 4 (central) 1997 Jul 15 handbook, halfpage 19 I2 TDA1300T LDON 7 18 VDD VDDL 8 17 MI RFE 9 16 LO RF 10 15 GND HG 11 14 ADJ LS 12 13 CL MBG472 Fig.2 Pin configuration. 4 Philips Semiconductors Preliminary specification Photodetector amplifiers and laser supplies TDA1300T; TDA1300TT FUNCTIONAL DESCRIPTION R ADJn –9 B N ≅ ---------------- K × G ext × 870 ×10 (Hz) CL The TDA1300T; TDA1300TT can be divided into two main sections: in case of N-sub monitor, where Gext represents the AC gain of an extra loop amplifier, if applied, and K = ∆Imon/∆IL which is determined by the laser/monitor unit. Imon is the average current (pin 17) at typical light emission power of the laser diode. • Laser control circuit section • Photo diode signal filter and amplification section. Laser control circuit section The main function of the laser control circuit is to control the laser diode current in order to achieve a constant light output power. This is done by monitoring the monitor diode. There is a fixed relation between light output power of the laser and the current of the monitor diode. The circuit can handle P-sub or N-sub monitor diodes. • The third part is the power output stage, its input being the integrator output signal. This stage has a separate supply voltage (VDDL), thereby offering the possibility of reduced power consumption by supplying this pin with the minimum voltage necessary. It also has a laser diode protection circuit which comes into action just before the driving output transistor will get saturated due to a large voltage dip on VDDL. Saturation will result in a lower current of the laser diode, which normally is followed immediately by an increment of the voltage of the external capacitor CL. This could cause damage to the laser diode at the end of the dip. The protection circuit prevents an increment of the capacitor voltage and thus offers full protection to the laser diode under these circumstances. N-sub MONITOR In this event pin 14 (ADJ) must be connected to the positive supply voltage VDD to select the N-sub mode. With an adjustable resistor (RADJn) across the diode the monitor current can be adjusted (and so the laser light output power) if one knows that the control circuit keeps the monitor voltage Vmon at a constant level of approximately 150 mV. P-sub MONITOR Photo diode signal filter and amplification section In this event pin 14 (ADJ) is connected via resistor RADJp to ground. The P-sub mode is selected and pin 14 (ADJ) acts as reference band gap voltage, providing together with RADJp an adjustable current lADJ. Now the control circuit keeps the monitor current at a level which is 10lADJ. This section has 6 identical current amplifiers. Amplifiers 1 to 4 are designed to amplify the focus photo diode signals. Each amplifier has two outputs: an LF output and an internal RF output. Amplifiers 5 and 6 are used for the radial photo diode currents and only have an LF output. All 6 output signals are low-pass filtered with a corner frequency at 69 kHz. The internal RF output signals are summed together and converted to a voltage afterwards by means of a selectable transresistance. The circuit is built up in three parts: • The first part is the input stage which is able to switch between both modes (N-sub or P-sub). • The second part is the integrator part which makes use of an external capacitor CL. This capacitor has two different functions: This transresistance RRF can be changed between 140 kΩ (3.3 V application) or 240 kΩ (5 V application) in combination with the P-sub monitor. In the event of the N-sub monitor selection, RRF can be changed between 70 kΩ (3.3 V application) and 120 kΩ (5 V application). The RF signal is available directly at pin 10 but there is also an unfiltered signal available at pin 9. – During switch-on of the laser current, it provides a current slope of typically: ∆I o(L) 10 –6 -------------- ≅ ----------- (A/s) ∆t CL The used equalization filter has 2 different filter curves: – After switch-on it ensures that the bandwidth equals • One for single-speed mode –9 K × G ext × 90 ×10 B P ≅ -------------------------------------------------- (Hz) C L × I mon • One for double-speed mode. in case of P-sub monitor or 1997 Jul 15 5 Philips Semiconductors Preliminary specification Photodetector amplifiers and laser supplies Table 1 TDA1300T; TDA1300TT Gain and monitor modes PIN MONITOR MODE RRF (kΩ) RADJp connected to ground P-sub 140 HG ADJ 0 INTENDED APPLICATION AREA 3.3 V 0 1 N-sub 70 1(1) RADJp connected to ground P-sub 240 1(1) 1 N-sub 120 5V Note 1. Logic 1 or not connected. Table 2 Speed and laser modes; note 1 MODE DEFAULT VALUE(2) PIN LS LDON SPEED LASER SINGLE DOUBLE on off 1 1 0 X(3) X(3) 1 X(3) X(3) 1 0 Notes 1. 1 = HIGH voltage (VDD); 0 = LOW voltage (GND); X = don’t care. 2. If not connected. 3. X = don’t care. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDD supply voltage − 8 V Pmax maximum power dissipation − 300 mW Tstg storage temperature −65 +150 °C Tamb operating ambient temperature −40 +85 °C −40 +70 °C −2 +2 kV −3 +3 kV TDA1300T TDA1300TT Ves(1) electrostatic handling pin 16 note 2 electrostatic handling (all other pins) Notes 1. Classification A: human body model; C = 100 pF; R = 1500 Ω; Ves = ±2000 V. Charge device model: C = 200 pF; L = 2.5 µH; R = 0 Ω; Ves = 250 V. 2. Equivalent to discharging a 100 pF capacitor through a 1.5 kΩ series resistor. 1997 Jul 15 6 Philips Semiconductors Preliminary specification Photodetector amplifiers and laser supplies TDA1300T; TDA1300TT THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER VALUE UNIT TDA1300T 60 K/W TDA1300TT 128 K/W thermal resistance from junction to ambient in free air QUALITY SPECIFICATION In accordance with “SNW-FQ-611 part E”. The numbers of the quality specification can be found in the “Quality Reference Handbook”. The handbook can be ordered using the code 9397 750 00192. CHARACTERISTICS VDD = 3.3 V; VDDL = 2.5 V; Tamb = 25 °C; RADJ = 48 kΩ; HG = logic 1; LS = logic 1; with an external low-pass filter (Rext = 750 Ω; Cext = 47 pF) connected at the RFE output pin. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supply IDD supply current laser off − 7 − mA VDD amplifier supply voltage 3 − 5.5 V VDDL laser control supply voltage 2.5 − 5.5 V P power dissipation − 20 − mW − − 10 µA − 1 − pA/√Hz − 0.9 − V −0.2 − VDD − 1 V laser off; VDD = 3 V Diode current amplifiers (n = 1 to 6; m = 1 to 6) Ii(d) diode input current In(i)(eq) equivalent noise input current note 1 Ii(d) = 1.67 µA Vi(d) diode input voltage Vo(d) diode output voltage Gd(n) diode current gain Ii(d) = 1.67 µA; Vo(d(n)) = 0 V; note 2 1.43 1.55 1.67 IO(d) diode offset current Ii(central) = Ii(satellite) = 0; note 3 − − 100 nA Zo(d) output impedance Ii(d) = 1.67 µA; Vo(d(n)) = 0 V 500 − − kΩ B 3 dB bandwidth Ii(d) = 1.67 µA 50 68 − kHz Gmm mismatch in gain between amplifiers Ii(d) = 1.67 µA; Vo(d(n)) = Vo(d(m)) − − 3 % 1997 Jul 15 7 Philips Semiconductors Preliminary specification Photodetector amplifiers and laser supplies SYMBOL PARAMETER TDA1300T; TDA1300TT CONDITIONS MIN. TYP. MAX. UNIT Data amplifier; equalized single and double speed VO(RF) DC output voltage Ii(central) = 0 − 0.3 − V RRF transresistance N-sub monitor mode (low gain); note 3 56 70 84 kΩ N-sub monitor mode (high gain); note 3 96 120 144 kΩ P-sub monitor mode (low gain); note 4 112 140 168 kΩ P-sub monitor mode (high gain); note 4 200 240 285 kΩ note 5 − − VDD − 1.2 V VO(RF)(max) maximum output voltage SRRF RF slew rate VSR = 1 V (peak-to-peak) − 6 − V/µs Zo(RF) RF output impedance fi = 1 MHz − 100 − Ω td(eq) equalization delay − 320 − ns td(f) flatness delay (Φ/ω) LS = 1; note 6 − 10 − ns LS = 0; note 6 − 5 − ns note 6 4.5 6 − dB 3 5 − MHz G/G data amplifier gain ratio BRF unequalized output bandwidth Ii(d) = 1.67 µA Control pins LDON, LS and HG (with 47 kΩ internal pull-up resistor) VIL LOW level input voltage −0.2 − +0.5 V VIH HIGH level input voltage VDD − 1 − VDD + 0.2 V IIL LOW level input current − − 100 µA −0.2 − VDDL − 0.7 V − − −100 mA CL = 1 nF (see Fig.8) − 3.4 − mA/µs mV Laser output Vo(L) output voltage Io(L) output current ∆Io(L)/∆t slew rate output current Io(L) = 100 mA Monitor diode input Vref virtual reference voltage N-sub monitor mode 130 150 170 − IL leakage current N-sub monitor mode − 1 Vi(mon) monitor input voltage P-sub monitor mode − VDD − 0.7 − V Ii(mon) monitor input current P-sub monitor mode − − 2 mA ∆T reference temperature drift N-sub monitor mode − 40 − ppm RSref reference supply rejection N-sub monitor mode − − 1 % 1997 Jul 15 8 nA Philips Semiconductors Preliminary specification Photodetector amplifiers and laser supplies SYMBOL PARAMETER TDA1300T; TDA1300TT CONDITIONS MIN. TYP. MAX. UNIT Reference source VADJ and laser adjustment current IADJ Vref reference voltage RADJ = 48 kΩ 1.15 1.24 1.31 mV ∆T reference temperature drift − 40 − ppm RSref reference supply rejection − − 1 % IADJ adjustment current RADJ = 5.6 kΩ − − 200 µA Zi input impedance RADJ = 4.8 kΩ M multiplying factor (Imon/IADJ) − 1 − kΩ − 10 − − Notes to the characteristics 1. The maximum input current is defined as the current in which the gain Gd(n) reaches its minimum. Increasing the supply voltage to VDD = 5 V increases the maximum input current (see also Figs 4 and 5). 2. The gain increases if a larger supply voltage is used (see Fig.6). 3. Transresistance of 70 kΩ and 120 kΩ (typical) is only available in N-sub monitor mode (see Table 1). 4. Transresistance of 140 kΩ and 240 kΩ (typical) is only available in P-sub monitor mode (see Table 1). 5. Output voltage swing will be: VO(RF)(swing) = VO(RF)(max) − VO(RF)(p-p). 6. For single speed the data amplifier gain ratio is defined as gain difference between 1 MHz and 100 kHz, while the flatness delay is defined up to 1 MHz (see Fig.7). For double speed the data amplifier gain ratio is defined as gain difference between 2 MHz and 200 kHz, while the flatness delay is defined up to 2 MHz. 1997 Jul 15 9 Philips Semiconductors Preliminary specification Photodetector amplifiers and laser supplies TDA1300T; TDA1300TT Transfer functions; see Fig.6 The equalized amplifier including Cext and Rext has the following transfer functions, where ‘RFE’ refers to equalized output only and ‘RF’ refers to equalized and not equalized outputs. FOR SINGLE SPEED (SP = LOGIC 1) 2 2 V RFE 1 1 1 – ks ⁄ ω os × ----------------------- × ------------------------------------------------------------ = R RF × -----------------------------------------------------------------------2 2 + ⁄ 1 + sR × C ext 1 s ω I i(central) 1 ext 1+1⁄Q×s⁄ω +s ⁄ω (1) os os FOR DOUBLE SPEED (SP = LOGIC 0) 2 2 V RFE 1 1 – ks ⁄ ω os - × ------------------------------------------------------------ = R RF × -----------------------------------------------------------------------2 2 + 1 sR I i(central) ext × C ext 1+1⁄Q×s⁄ω +s ⁄ω od (2) od The denominator forms the denominator of a Bessel low-pass filter. Symbols used in equations (1) and (2) are explained in Table 3. Table 3 Transresistance SYMBOL DESCRIPTION TYP. k internally defined 4 UNIT ωos/ω1 internally defined 1.094 Q internally defined 0.691 ωod = 2 × ωos internally defined 17.6 × 10−6 RRF see Chapter “Characteristics” − Rext external resistor 750 Ω Cext external capacitor 47 pF 1997 Jul 15 10 rad/s Philips Semiconductors Preliminary specification Photodetector amplifiers and laser supplies TDA1300T; TDA1300TT MBG471 24 handbook, full pagewidth Ii(max) (µA) 20 16 12 8 3 3.5 4 4.5 5 VDD (V) 5.5 ↑ = test limit. Fig.3 Maximum input current as a function of VDD. MBG469 40 handbook, full pagewidth (1) Io (µA) (2) 30 (3) 20 10 0 0 → = test limit. 10 20 30 (1) Gd(n) = 1.43. (2) VDD = 5.5 V. (3) VDD = 3.4 V. Fig.4 Output current as a function of input current. 1997 Jul 15 11 Ii (µA) 40 Philips Semiconductors Preliminary specification Photodetector amplifiers and laser supplies TDA1300T; TDA1300TT MBG470 1.75 handbook, full pagewidth Io/Ii (mA) 1.65 1.55 1.45 1.35 3 3.5 4 4.5 5 5.5 VDD (V) ↓ = test limit. Fig.5 Gain as a function of VDD. MBG468 9.0 handbook, full pagewidth (1) 450 td (ns) gain (dB) 7.0 400 5.0 350 (2) 300 3.0 (1) (2) 250 1.0 −1.0 10 10 2 10 3 (1) Single speed. (2) Double speed. Fig.6 Transfer of equalizer. 1997 Jul 15 12 f (kHz) 200 10 4 Philips Semiconductors Preliminary specification Photodetector amplifiers and laser supplies TDA1300T; TDA1300TT INTERNAL PIN CONFIGURATION VDD dbook, full pagewidth VDD VDD VDD 47 kΩ GND CL LDON HG LS VDD I1 I2 I3 I4 I5 I6 from LDON circuitry VDD VDD O1 O2 O3 O4 O5 O6 RF RFE VDD VDD VDDL P-sub mode MI ADJ LO VDD N-sub mode MI MBG475 Fig.7 Equivalent internal pin diagrams. 1997 Jul 15 13 1997 Jul 15 RADJn 14 la mon photodiodes P-sub monitor configuration la mon photodiodes RF/ RFE R2 VDD VDDL 1 nF 2.5 to 5 V LO MI I6 I5 I4 CL CL RADJp ADJ TDA1300 GND LDON O6 O5 O4 O3 O2 I2 I3 O1 VDD GND I1 DIODE AMPLIFIER AND LASER SUPPLY HG LS RF/ RFE CL 1 nF 2.5 to 5 V CL VDDL VDDD FO SL (TDA7072/7073) POWER AMPLIFIER RA TDA1301 SILD SIDA SICL TS2 TS1 XTLR XTLO XTLI CLO OTD VSSD NRST DIGITAL SERVO IC VDDA sledge radial actuator focus actuator clk Fig.8 Application diagram for CD player. VSSK LDON LDON VRL LO O6 R1 D4 VRH TDA1300 O5 O4 D3 D2 D1 MI I6 I5 I4 O3 O2 I2 I3 O1 ADJ VDD I1 DIODE AMPLIFIER AND LASER SUPPLY HG LS VDDD MBG473 DISPLAY PROCESSOR SUBCODE DECODER DECODER (SAA7345) MOTOR CONTROL PLL clk to spindle motor end_stop_switch KEYBORD DISPLAY POWER AMP right left Photodetector amplifiers and laser supplies handbook, full pagewidth N-sub monitor configuration VDDA Philips Semiconductors Preliminary specification TDA1300T; TDA1300TT APPLICATION INFORMATION Philips Semiconductors Preliminary specification Photodetector amplifiers and laser supplies TDA1300T; TDA1300TT PACKAGE OUTLINES SO24: plastic small outline package; 24 leads; body width 7.5 mm SOT137-1 D E A X c HE y v M A Z 13 24 Q A2 A (A 3) A1 pin 1 index θ Lp L 1 12 e detail X w M bp 0 5 10 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (1) e HE L Lp Q v w y mm 2.65 0.30 0.10 2.45 2.25 0.25 0.49 0.36 0.32 0.23 15.6 15.2 7.6 7.4 1.27 10.65 10.00 1.4 1.1 0.4 1.1 1.0 0.25 0.25 0.1 0.9 0.4 inches 0.10 0.012 0.096 0.004 0.089 0.01 0.019 0.013 0.014 0.009 0.61 0.60 0.30 0.29 0.050 0.419 0.043 0.055 0.394 0.016 0.043 0.039 0.01 0.01 0.004 0.035 0.016 Z (1) θ 8o 0o Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC SOT137-1 075E05 MS-013AD 1997 Jul 15 EIAJ EUROPEAN PROJECTION ISSUE DATE 95-01-24 97-05-22 15 Philips Semiconductors Preliminary specification Photodetector amplifiers and laser supplies TDA1300T; TDA1300TT TSSOP24: plastic thin shrink small outline package; 24 leads; body width 4.4 mm D SOT355-1 E A X c HE y v M A Z 13 24 Q A2 (A 3) A1 pin 1 index A θ Lp L 1 12 bp e detail X w M 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (2) e HE L Lp Q v w y Z (1) θ mm 1.10 0.15 0.05 0.95 0.80 0.25 0.30 0.19 0.2 0.1 7.9 7.7 4.5 4.3 0.65 6.6 6.2 1.0 0.75 0.50 0.4 0.3 0.2 0.13 0.1 0.5 0.2 8o 0o Notes 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. Plastic interlead protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT355-1 1997 Jul 15 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 93-06-16 95-02-04 MO-153AD 16 Philips Semiconductors Preliminary specification Photodetector amplifiers and laser supplies TDA1300T; TDA1300TT SOLDERING TSSOP Introduction Wave soldering is not recommended for TSSOP packages. This is because of the likelihood of solder bridging due to closely-spaced leads and the possibility of incomplete solder penetration in multi-lead devices. There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. If wave soldering cannot be avoided, the following conditions must be observed: • A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our “IC Package Databook” (order code 9398 652 90011). • The longitudinal axis of the package footprint must be parallel to the solder flow and must incorporate solder thieves at the downstream end. Reflow soldering Even with these conditions, do not consider wave soldering TSSOP packages with 48 leads or more, that is TSSOP48 (SOT362-1) and TSSOP56 (SOT364-1). Reflow soldering techniques are suitable for all SO and TSSOP packages. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. METHOD (SO AND TSSOP) During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 °C. Maximum permissible solder temperature is 260 °C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 °C within 6 seconds. Typical dwell time is 4 seconds at 250 °C. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 °C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Wave soldering Repairing soldered joints SO Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C. Wave soldering techniques can be used for all SO packages if the following conditions are observed: • A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. • The longitudinal axis of the package footprint must be parallel to the solder flow. • The package footprint must incorporate solder thieves at the downstream end. 1997 Jul 15 17 Philips Semiconductors Preliminary specification Photodetector amplifiers and laser supplies TDA1300T; TDA1300TT DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Jul 15 18 Philips Semiconductors Preliminary specification Photodetector amplifiers and laser supplies TDA1300T; TDA1300TT NOTES 1997 Jul 15 19 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, Fax. +43 160 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. +45 32 88 2636, Fax. +45 31 57 0044 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615800, Fax. +358 9 61580920 France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex, Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 Germany: Hammerbrookstraße 69, D-20097 HAMBURG, Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 4894 339/239, Fax. +30 1 4814 240 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: see Singapore Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. 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No. 5, 80640 GÜLTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Internet: http://www.semiconductors.philips.com © Philips Electronics N.V. 1997 SCA55 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 547027/50/03/pp20 Date of release: 1997 Jul 15 Document order number: 9397 750 01673