Bulletin I27191 02/05 50MT060ULSA 50MT060ULSTA "LOW SIDE CHOPPER" IGBT MTP Ultrafast Speed IGBT Features • Gen. 4 Ultrafast Speed IGBT Technology • HEXFRED TM Diode with UltraSoft Reverse Recovery • Very Low Conduction and Switching Losses • Optional SMD Thermistor (NTC) • Al2O3 DBC • Very Low Stray Inductance Design for High Speed Operation • UL approved ( file E78996 ) VCES = 600V IC = 100A, TC = 25°C Benefits • Optimized for Welding, UPS and SMPS Applications • Operating Frequencies > 20 kHz Hard Switching, >200 kHz Resonant Mode • Low EMI, requires Less Snubbing • Direct Mounting to Heatsink • PCB Solderable Terminals • Very Low Junction-to-Case Thermal Resistance MMTP Absolute Maximum Ratings Parameters VCES Collector-to-Emitter Voltage IC Continuos Collector Current ICM Pulsed Collector Current ILM Peak Switching Current I Diode Continuous Forward Current F Max Units 600 V @ TC = 25°C 100 A @ TC = 122°C 50 200 200 @ TC = 100°C 48 IFM Peak Diode Forward Current 200 VGE Gate-to-Emitter Voltage ± 20 VISOL RMS Isolation Voltage, Any Terminal to Case, t = 1 min 2500 PD Maximum Power IGBT Dissipation Diode www.irf.com @ TC = 25°C 445 @ TC = 100°C 175 @ TC = 25°C 205 @ TC = 100°C 83 V W 1 50MT060ULSA, 50MT060ULSTA Bulletin I27191 02/05 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameters Min Typ Max Units Test Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 V CE(on) Collector-to-Emitter Voltage V GE(th) Gate Threshold Voltage B VR Diode Reverse Breakdown Voltage V 2.31 V GE = 15V, I C = 50A 1.96 1.88 2.55 2.24 V GE = 15V, I C = 100A V GE = 15V, I C = 100A, T J = 150°C 3 6 I C = 0.5mA 600 ∆V GE(th) / Temperature Coeff. of ∆T J Threshold Voltage I R = 200µA - 13 22 V GE = 0V, I C = 250µA 1.69 mV/°C V CE = V GE , I C = 500µA g fe Forward Transconductance S V CE = 50V, I C = 100A I CES Collector-to-Emiter Leaking Current 29 0.25 mA V GE = 0V, V CE = 600V V FM Diode Forward Voltage Drop 6 1.82 V V GE = 0V, V CE = 600V, T J = 150°C I F = 100A, V GE = 0V I GES Gate-to-Emitter Leakage Current nA V GE = ± 20V 1.64 1.56 1.74 ± 250 I F = 100A, V GE = 0V, T J = 150°C Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameters Min Typ Max Units Test Conditions Qg Total Gate Charge (turn-on) 370 555 Qge Qgc Eon Eoff Ets Gate-Emitter Charge (turn-on) Gate-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss 64 163 0.7 1.7 2.4 96 245 1.2 2.6 3.8 nC IC = 100A mJ Eon Turn-On Switching Loss 1.1 1.7 mJ Eoff Turn-Off Switching Loss 2.5 3.8 Rg = 5Ω, T J = 125°C Ets Total Switching Loss 3.6 5.5 Energy losses include tail and diode reverse Cies Input Capacitance 9800 14700 Coes Output Capacitance 602 903 Cres Ct Reverse Transfer Capacitance Diode Junction Capacitance 121 118 182 177 trr Diode Reverse Recovery Time 99 150 ns VCC = 480V, IC = 50A Irr Diode Peak Reverse Current 6.5 9.8 A di/dt = 200A/µs 320 236 735 VCC = 480V VGE = 15V IC = 50A, VCC = 480V, VGE = 15V, Rg = 5Ω Energy losses include tail and diode reverse recovery IC = 50A, VCC = 480V, VGE = 15V recovery Qrr Diode Recovery Charge di(rec)M/dt Diode PeakRate of Fall of Recovery During tb 2 VGE = 0V pF VCC = 30V f = 1.0 MHz Vr = 600V, f = 1.0 MHz nC Rg = 5Ω A/µs www.irf.com 50MT060ULSA, 50MT060ULSTA Bulletin I27191 02/05 Thermistor Specifications (50MT060ULSTA only) Parameters Min Typ R0 (1) Resistance β (1) (2) Sensitivity index of the thermistor material (1) T0,T1 are thermistor's temperatures (2) R0 R1 Max Units Test Conditions 30 kΩ T0 = 25°C 4000 K T0 = 25°C T1 = 85°C = exp [ β ( 1T 1 0 )], T1 Temperatures in kelvin Thermal- Mechanical Specifications Parameters Min Typ Max Units °C TJ Operating Junction Temperature Range - 40 150 TSTG Storage Temperature Range - 40 125 RthJC Junction-to-Case RthCS Case-to-Sink IGBT 0.28 Diode 0.6 Module °C/ W 0.06 (Heatsink Compound Thermal Conductivity = 1 W/mK) T Wt Mounting torque to heatsink Weight (3) 3 ± 10% 66 Nm g (3) A mounting compound is recommended and the torque should be checked after 3 hours to allow for the spread of the compound. Lubricated threads 100 Duty cycle : 50% Tj = 125°C Tsink = 90°C Power Dissipation = 92W Load Current ( A ) 75 50 25 0 0.1 1 10 100 f , Frequency ( kHz ) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) www.irf.com 3 50MT060ULSA, 50MT060ULSTA Bulletin I27191 02/05 1000.0 TJ = 150C IC, Collector-to-Emitter Current (Α) IC , Collector-to-Emitter Current (A) 100 TJ = 25C 10 Vge = 15V 380µs Pulse Width T J = 150°C 100.0 T J = 25°C 10.0 VCC = 50V 20µs PULSE WIDTH 1.0 1 0.6 1.0 1.4 1.8 5.0 2.2 VCE , Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics 6.5 2 VCE , Collector-to Emitter Voltage (V) IC Maximum DC Collector Current (A) 6.0 Fig. 3 - Typical Transfer Characteristics 120 100 80 60 40 20 IC = 100A 1.75 IC = 50A 1.5 IC = 25A 1.25 1 0 25 50 75 100 125 150 TC Case Temperature (°C) Fig. 4 - Maximum Collector Current vs. Case Temperature 4 5.5 VGE, Gate-to-Emitter Voltage (V) 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature www.irf.com 50MT060ULSA, 50MT060ULSTA Bulletin I27191 02/05 1 Thermal Response ( Z thJC ) D = 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 τJ 0.001 R1 R1 τJ τ1 R2 R2 τ2 τ1 R3 R3 τC τ τ3 τ2 τ3 Ci= τi/Ri Ci i/Ri τi (sec) 0.000968 0.130 0.019621 0.100 0.051755 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 Ri (°C/W) 0.060 1E-005 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 6a Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 1 Thermal Response ( Z thJC ) D = 0.50 0.1 0.20 0.10 0.05 0.01 0.01 0.02 τJ R1 R1 τJ τ1 R2 R2 τ2 τ1 Ci= τi/Ri Ci i/Ri 0.001 R3 R3 τC τ τ2 τ3 τ3 Ri (°C/W) 0.200 τi (sec) 0.000993 0.296 0.038934 0.102 0.52648 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 6b Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) www.irf.com 5 50MT060ULSA, 50MT060ULSTA Bulletin I27191 02/05 14000 VGE , Gate-to-Emitter Voltage (V) 12000 C =C +C oes ce gc Cies C, Capacitance (pF) 20.0 VGE = 0V, f = 1 MHZ C = C +C , C SHORTED ies ge gc ce Cres = Cgc 10000 8000 Coes 6000 4000 2000 Cres VCE = 480V 16.0 12.0 8.0 4.0 0.0 0 1 10 100 0 1000 Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 200 300 400 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 5.0 100 VCC = 480V VGE = 15V RG = 5.0Ω VGE = 15V Total Switching Losses (mJ) EOFF TJ = 25°C I C = 100A 4.0 Switching Losses (mJ) 100 Q G, Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) 3.0 2.0 EON 1.0 VCC = 480V I C = 100A 10 I C = 50A I C = 25A 1 0.1 0.0 0 10 20 R G , Gate Resistance ( Ω ) Fig. 9 - Typical Switching Losses vs. Gate Resistance 6 IC= 100A 30 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 50MT060ULSA, 50MT060ULSTA Bulletin I27191 02/05 1000 12 Total Switching Losses (mJ) 10 IC, Collector-to-Emitter Current (A) RG = 5.0Ω TJ = 125°C VGE = 15V VCC = 480V 8 6 4 2 VGE = 20V T J = 125° 100 10 SAFE OPERATING AREA 1 0 20 40 60 80 1 100 10 100 1000 VCE, Collector-to-Emitter Voltage (V) IC, Collector Current (A) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA Instantaneous Forward Current - I F ( A ) 100 TJ = 150°C TJ = 125°C 10 TJ = 25°C 1 0.4 0.8 1.2 1.6 2.0 2.4 Forward Voltage Drop - VF ( V ) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current www.irf.com 7 50MT060ULSA, 50MT060ULSTA Bulletin I27191 02/05 40 320 VR = 480V TJ = 125°C TJ = 25°C 280 IF = 100A 30 IF = 50A IF = 100A IF = 25A IF = 50A IF = 25A 200 IRRM - (A) trr - (ns) 240 160 20 120 10 VR = 480V 80 TJ = 125°C TJ = 25°C 40 0 100 200 300 400 500 600 100 200 dif / dt - (A / µs) 300 500 600 Fig. 15 - Typical Recovery Current vs. dif/dt Fig. 14 - Typical Reverse Recovery vs. dif/dt 2000 10000 VR = 480V TJ = 125°C IF = 100A IF = 50A 1600 400 dif / dt - (A / µs) TJ = 25°C IF = 100A IF = 25A di(rec)M/dt - (A/µs) IF = 50A IF = 25A Q rr - (nC) 1200 800 1000 400 VR = 480V TJ = 125°C TJ = 25°C 0 100 200 300 400 500 600 dif / dt - (A / µs) Fig. 16 - Typical Stored Charge vs. dif/dt 8 100 100 200 300 400 500 600 dif / dt - (A / µs) Fig. 17 - Typical di(rec)M/dt vs. dif/dt www.irf.com 50MT060ULSA, 50MT060ULSTA Bulletin I27191 02/05 Outline Table Circuit Diagram Resistance in ohms Dimensions in millimetres Note: unused terminals are not assembled in the package www.irf.com 9 50MT060ULSA, 50MT060ULSTA Bulletin I27191 02/05 Ordering Information Table Device Code 50 MT 060 1 2 3 U LS T A 4 5 6 7 1 - Current Rating (50 = 50A) 2 - Essential Part Number 3 - Voltage rating (060 = 600V) 4 - Speed/ Type 5 - Circuit Configuration (LS = Low Side Chopper) 6 - Special Option (U = Ultra Fast IGBT) ! none = no special option !T 7 - = Thermistor A = Al2O3 DBC Substrate Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 02/05 10 www.irf.com