PD - 50064A GA50TS120U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features VCES = 1200V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses • HEXFRED™ antiparallel diodes with ultra- soft recovery • Industry standard package • UL approved VCE(on) typ. = 2.4V @VGE = 15V, IC = 50A Benefits • Increased operating efficiency • Direct mounting to heatsink • Performance optimized for power conversion: UPS, SMPS, Welding • Lower EMI, requires less snubbing Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C ICM ILM IFM VGE VISOL PD @ TC = 25°C PD @ TC = 85°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Pulsed Collector Current ➀ Peak Switching Current ➁ Peak Diode Forward Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal To Case, t = 1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Range Storage Temperature Range Max. Units 1200 50 100 100 100 ±20 2500 280 145 -40 to +150 -40 to +125 V A V W °C Thermal / Mechanical Characteristics Parameter RθJC RθJC RθCS www.irf.com Thermal Resistance, Junction-to-Case - IGBT Thermal Resistance, Junction-to-Case - Diode Thermal Resistance, Case-to-Sink - Module Mounting Torque, Case-to-Heatsink Mounting Torque, Case-to-Terminal 1, 2 & 3 ➂ Weight of Module Typ. Max. — — 0.1 — — 200 0.44 0.70 — 4.0 3.0 — Units °C/W N. m g 1 4/24/2000 GA50TS120U Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES VCE(on) VGE(th) ∆VGE(th)/∆TJ gfe ICES VFM IGES Parameter Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Voltage Min. Typ. Max. Units Conditions 1200 — — VGE = 0V, I C = 1mA — 2.4 3.0 VGE = 15V, IC = 50A — 2.2 — V VGE = 15V, IC = 50A, TJ = 125°C Gate Threshold Voltage 3.0 — 6.0 VCE = 6.0V, IC = 500µA Temperature Coeff. of Threshold Voltage — -11 — mV/°C VCE = 6.0V, IC = 500µA Forward Transconductance ➃ — 72 — S VCE = 25V, I C = 50A Collector-to-Emitter Leaking Current — — 1.0 mA VGE = 0V, VCE = 1200V — — 10 VGE = 0V, VCE = 1200V, TJ = 125°C Diode Forward Voltage - Maximum — 2.9 4.1 V IF = 50A, VGE = 0V — 2.7 — IF = 50A, VGE = 0V, TJ = 125°C Gate-to-Emitter Leakage Current — — 250 nA VGE = ±20V Dynamic Characteristics - TJ = 125°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff (1) Ets (1) Cies Coes Cres trr Irr Qrr di (rec)M/dt 2 Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Energy Turn-Off Switching Energy Total Switching Energy Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak ReverseCurrent Diode Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. — — — — — — — — — — — — — — — — — Typ. 397 67 132 74 82 313 327 6.0 10 16 8933 397 77 141 66 4616 999 Max. Units Conditions 596 VCC = 400V 100 nC IC = 60A 197 TJ = 25°C — RG1 = 15Ω, RG2 = 0Ω, — ns IC = 50A — VCC = 720V — VGE = ±15V — mJ Inductor load — 24 — VGE = 0V — pF VCC = 30V — ƒ = 1 MHz — ns IC = 50A — A RG1 = 15Ω — nC RG2 = 0Ω — A/µs VCC = 720V di/dt = 1200A/µs www.irf.com GA50TS120U 60 For both: D uty cy cle: 50% TJ = 125°C T s ink = 90°C G ate drive as specified LOAD CURRENT (A) 50 P ow e r Dis sip ation = 65 W 40 S q u a re w a v e : 30 60 % of ra ted vo ltag e 20 I 10 Id e a l d io d e s 0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) I C , Collector Current (A) TJ = 125 °C TJ = 25 °C V = 15V 80µs PULSE WIDTH GE 10 1.5 2.0 2.5 3.0 VCE , Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com I C , Collector-to-Emitter Current (A) 1000 100 100 TJ = 125 °C TJ = 25 °C 10 V = 25V 80µs PULSE WIDTH CE 1 4.0 5.0 6.0 7.0 8.0 VGE , Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics 3 GA50TS120U 60 4.0 V = 15V 80 us PULSE WIDTH VCE , Collector-to-Emitter Voltage(V) Maximum DC Collector Current(A) GE 50 40 30 20 10 0 25 50 75 100 125 150 TC , Case Temperature ( °C) IC = 100 A 3.0 IC = 50 A IC = 25 A 2.0 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( ° C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature T herm al R es pons e (Zth JC ) 1 D = 0 .50 0 .20 0.1 0 .10 0 .05 0.02 0.01 S IN G LE PU L SE (T HE R M AL RE S PO N SE ) PDM t Notes: 1. Duty factor D = t 0.01 0.0001 1 /t 1 t2 2 2. Peak TJ = PDM x Z thJC + TC 0.001 0.01 0.1 1 A 10 t 1 , R ecta ngu la r Pulse D u ration (se c) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com GA50TS120U VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc C, Capacitance (pF) 16000 Cies 12000 8000 Coes C res 4000 20 VGE , Gate-to-Emitter Voltage (V) 20000 0 1 10 12 8 4 0 100 0 Total Switching Losses (mJ) Total Switching Losses (mJ) 100 20 18 16 14 20 30 40 ( Ω) RG , Gate Resistance (Ohm) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 200 300 400 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage V CC = 720V V GE = 15V TJ = 125 °C 22 I C = 50A 10 100 Q G , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 0 VCC = 400V I C = 50A 16 VCE , Collector-to-Emitter Voltage (V) 24 50 RG1 Ω;RG2 = 0 Ω = Ohm G =15 VGE = 15V VCC = 720V IC = 100 A IC = 50 A IC = 25 A 10 1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C ) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 GA50TS120U 40 140 R RG1 = OhmG2 = 0 Ω G =15Ω;R = 150 ° C TTCJ = 125°C I C , Collector Current (A) Total Switching Losses (mJ) VCC = 720V VGE = 15V 30 VGE = 20V T J = 125 oC 120 VCE measured at terminal(Peak Voltage) 100 20 10 80 60 40 20 SAFE OPERATING AREA 0 0 20 40 60 80 100 0 120 0 I C , Collector Current (A) 200 400 600 800 1000 1200 1400 VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Reverse Bias SOA 100 10000 VR = 72 0 V TJ = 12 5 °C TJ = 25 °C Instantaneous Forward Current - IF ( A ) TJ = 125°C TJ = 25°C 8000 I F = 1 00 A QRR - ( nC) I F = 5 0A I F = 25 A 4000 2000 10 1.0 2.0 3.0 4.0 F o rw a rd V o lta g e D ro p - V FM (V ) Fig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward Current 6 6000 0 500 1000 1500 2000 di f /dt - (A /µs) Fig. 14 - Typical Stored Charge vs. dif/dt www.irf.com GA50TS120U 120 240 VR = 7 2 0V TJ = 1 25 °C TJ = 2 5°C VR = 7 2 0V TJ = 1 25 °C TJ = 2 5°C I F = 10 0A 200 100 I F = 5 0A I F = 1 00 A I F = 50 A I F = 25 A I F = 2 5A IRRM - ( A ) trr - ( ns ) 160 120 80 40 500 60 40 1000 1500 2000 di f /dt - (A /µs) Fig. 15 - Typical Reverse Recovery vs. dif/dt www.irf.com 80 20 500 1000 1500 2000 di f /dt - (A /µs) Fig. 16 - Typical Recovery Current vs. dif/dt 7 GA50TS120U 90% Vge +Vge Vce Ic 9 0 % Ic 10% Vce Ic 5 % Ic td (o ff) tf Eoff = ∫ Vce Ic dt t1 + 5 µ S V c e ic d t t1 Fig. 17a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 t2 Fig. 17b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O L T A G E D .U .T . 1 0 % +V g trr Q rr = Ic ∫ trr id t Icddt tx +Vg tx 10% Vcc 1 0 % Irr V cc D UT VO LTAG E AN D CU RRE NT Vce V pk Irr Vcc 1 0 % Ic Ip k 9 0 % Ic Ic D IO D E R E C O V E R Y W A V E FO R M S tr td (o n ) 5% Vce t1 ∫ t2 ce ieIcd t dt E o n = VVce t1 t2 E re c = D IO D E R E V E R S E REC OVERY ENER GY t3 Fig. 17c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr 8 ∫ t4 VVd d idIc d t dt t3 t4 Fig. 17d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr www.irf.com GA50TS120U V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T . V O L T A G E IN D .U .T . C U R R E N T IN D 1 t0 t1 t2 Figure 17e. Macro Waveforms for Figure 18a's Test Circuit L 1000V D.U.T. Vc* RL= 600V 4 X IC @25°C 0 - 600V 50V 6000µ F 100 V Figure 18. Clamped Inductive Load Test Circuit www.irf.com Figure 19. Pulsed Collector Current Test Circuit 9 GA50TS120U Notes: ➀ Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ➁ See fig. 17 ➂ For screws M5x0.8 ➃ Pulse width 50µs; single shot. Case Outline — INT-A-PAK Dimensions are shown in millimeters (inches) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 10/00 10 www.irf.com