PHILIPS TEA1097H

INTEGRATED CIRCUITS
DATA SHEET
TEA1097
Speech and loudspeaker amplifier
IC with auxiliary inputs/outputs and
analog multiplexer
Product specification
Supersedes data of 1998 Jun 11
File under Integrated Circuits, IC03
1999 Apr 08
Philips Semiconductors
Product specification
Speech and loudspeaker amplifier IC with
auxiliary inputs/outputs and analog multiplexer
TEA1097
• General purpose auxiliary output for transmit and
receive
FEATURES
Line interface
• Low DC line voltage
• Auxiliary transmit input with high signal level capability
dedicated to line transmission
• Voltage regulator with adjustable DC voltage
• Auxiliary receive input with high signal level capability
• Symmetrical high-impedance inputs (70 kΩ) for
dynamic, magnetic or electric microphones
• Integrated multiplexer for channels selection.
• Dual Tone Multi-Frequency (DTMF) input with
confidence tone on earphone and/or loudspeaker
APPLICATIONS
• Receive amplifier for dynamic, magnetic or
piezo-electric earpieces (with externally adjustable gain)
• Telephone answering machines
• Automatic Gain Control (AGC) for true line loss
compensation.
• Line powered telephone sets
• Telephones with digital handsfree
• Cordless telephones
• Fax machines.
Supplies
• Provides a strong 3.35 V regulated supply for
microcontroller or dialler
GENERAL DESCRIPTION
The TEA1097 is an analog bipolar circuit dedicated for
telephone applications. It includes a line interface, handset
microphone and earpiece amplifiers, base microphone
and loudspeaker amplifiers, some specific auxiliary
Inputs/Outputs (I/Os) and an analog multiplexer to enable
the right transmit and/or receive channels. The multiplexer
is controlled by a logic circuitry decoding four logic inputs
provided by a microcontroller. Twelve different application
modes have been defined and can be accessed by
selecting the right logic inputs.
• Provides filtered power supply, optimized according to
line current and compatible with external voltage or
current sources
• Filtered 2 V power supply output for electret microphone
• Compatible with a ringer mode
• Power-Down (PD) logic input for power-down.
Loudspeaker amplifier
• Single-ended rail-to-rail output
This IC can be supplied by the line and/or by the mains if
available (in a cordless telephone or a telephone
answering machine for example). It provides a 3.35 V
supply for a microcontroller or dialler and a 2 V filtered
voltage supply for electret microphones. The IC is
designed to facilitate the use of the loudspeaker amplifier
during ringing phase.
• Externally adjustable gain
• Dynamic limiter to prevent distortion
• Logarithmic volume control via linear potentiometer.
Auxiliary interfaces
• Asymmetrical high-impedance input for electret
microphone.
ORDERING INFORMATION
PACKAGE
TYPE
NUMBER
NAME
TEA1097TV
VSO40
plastic very small outline package; 40 leads
SOT158-1
TEA1097H
QFP44
plastic quad flat package; 44 leads (lead length 1.3 mm);
body 10 × 10 × 1.75 mm
SOT307-2
1999 Apr 08
DESCRIPTION
2
VERSION
Philips Semiconductors
Product specification
Speech and loudspeaker amplifier IC with
auxiliary inputs/outputs and analog multiplexer
TEA1097
QUICK REFERENCE DATA
Iline = 15 mA; RSLPE = 20 Ω; Zline = 600 Ω; f = 1 kHz; Tamb = 25 °C; AGC pin connected to LN; PD = HIGH; HFC = LOW;
AUXC = LOW; MUTT = HIGH; MUTR = HIGH; measured according to test circuits; unless otherwise specified.
SYMBOL
Iline
VSLPE
VBB
VDD
PARAMETER
line current operating range
CONDITIONS
MIN.
TYP.
MAX.
UNIT
normal operation
TEA1097H
11
−
140
mA
TEA1097TV
11
−
130
mA
with reduced performance 1
−
11
mA
stabilized voltage between SLPE
and GND (Vref)
Iline = 15 mA
3.4
3.7
4.0
V
Iline = 70 mA
5.7
6.1
6.5
V
regulated supply voltage for
internal circuitry
Iline = 15 mA
2.75
3.0
3.25
V
Iline = 70 mA
4.9
5.3
5.7
V
regulated supply voltage on
pin VDD
VBB > 3.35 V + 0.25 V
(typ.)
3.1
3.35
3.6
V
otherwise
−
VBB − 0.25 −
V
VESI(ext)
external voltage supply allowed on
pin ESI
−
−
6
V
IESI(ext)
external current supply allowed on
pin ESI
−
−
140
mA
IBB
current available on pin VBB
speech mode
−
11
−
mA
handsfree mode;
HFC = HIGH
−
9.5
−
mA
IBB(pd)
current consumption on VBB during
power-down phase
PD = LOW
−
460
−
µA
Gv(MIC-LN)
voltage gain from pin
MIC+/MIC− to LN
VMIC = 5 mV (RMS)
43.3
44.3
45.3
dB
Gv(IR-RECO)
voltage gain from pin IR
(referenced to LN) to RECO
VIR = 15 mV (RMS)
28.7
29.7
30.7
dB
∆Gv(QR)
gain voltage range between pins
RECO and QR
−3
−
+15
dB
Gv(TXIN-TXOUT)
voltage gain from pin TXIN to
TXOUT
13.15
14.85
16.55
dB
Gv(TXAUX-LN)
voltage gain from pin TXAUX to LN VTXAUX = 0.1 V (RMS);
note 1
11.5
12.5
13.5
dB
Gv(HFRX-LSAO)
voltage gain from pin HFRX to
LSAO
VHFRX = 20 mV (RMS);
RGALS = 255 kΩ; note 1
25.5
28
30.5
dB
∆Gv(trx)
gain control range for transmit and
receive amplifiers affected by the
AGC; with respect to Iline = 15 mA
Iline = 70 mA; on
Gv(MIC-LN), Gv(IR-RECO)
and Gv(IR-AUXO)
5.45
6.45
7.45
dB
VTXIN = 3 mV (RMS);
RGATX = 30.1 kΩ; note 1
Note
1. When the channel is enabled according to Table 1.
1999 Apr 08
3
Philips Semiconductors
Product specification
Speech and loudspeaker amplifier IC with
auxiliary inputs/outputs and analog multiplexer
TEA1097
BLOCK DIAGRAM
handbook, full pagewidth
LN
19 (15)
REG
SLPE
20
(16)
18
(14)
STARTER
LINE CURRENT DETECTION
LOW VOLTAGE BEHAVIOUR
AGC
22 (18)
SWITCH
D6
SUPPLY
MANAGEMENT
17 (13)
VBB
(9) 12
ESI
(19) 23
VDD
(20) 24
MICS
(38) 40
PD
(37) 39
HFC
AGC
POWER-DOWN
CURRENT SOURCES
GND
(10) 13
Tail currents for preamps
TXAUX 5 (43)
DTMF 34 (32)
ATT.
TEA1097TV
ANALOG
MULTIPLEXER
CONTROL
MIC+ 33 (31)
(39) 1
MUTT
(40) 2
MUTR
(41) 3
AUXC
(27) 29
GATX
MIC− 32 (30)
TXIN 30 (28)
STAB
25 (21)
GALS
14 (11)
LSAO
16 (12)
DLC
11 (8)
AUXO
6 (44)
RECO
(26) 28
TXOUT
(29) 31
GNDTX
(23) 27
VOL
TAIL
CURRENTS
VOLUME
CONTROL
(1) 7
HFRX
(36) 38
HFTX
(17) 21
IR
DYNAMIC
LIMITER
37 (35)
GARX
36 (34)
QR
35 (33)
ATT.
(42) 4
MGL392
The pin numbers given in parenthesis refer to the TEA1097H.
Fig.1 Block diagram.
1999 Apr 08
4
RAUX
Philips Semiconductors
Product specification
Speech and loudspeaker amplifier IC with
auxiliary inputs/outputs and analog multiplexer
TEA1097
PINNING
PIN
SYMBOL
DESCRIPTION
VSO40
QFP44
MUTT
1
39
logic input (active LOW)
MUTR
2
40
logic input (active LOW)
AUXC
3
41
logic input
RAUX
4
42
auxiliary receive amplifier input
TXAUX
5
43
auxiliary transmit amplifier input
AUXO
6
44
auxiliary amplifier output
HFRX
7
1
receive input for loudspeaker amplifier
8 to 10,
15 and 26
2 to 7, 22,
24 and 25
n.c.
not connected
DLC
11
8
dynamic limiter capacitor for the loudspeaker amplifier
ESI
12
9
external supply input
VBB
13
10
stabilized supply for internal circuitry
GALS
14
11
loudspeaker amplifier gain adjustment
LSAO
16
12
loudspeaker amplifier output
GND
17
13
ground reference
SLPE
18
14
line current sense
LN
19
15
positive line terminal
REG
20
16
line voltage regulator decoupling
IR
21
17
receive amplifier input
AGC
22
18
automatic gain control/line loss compensation
VDD
23
19
3.35 V regulated voltage supply for microcontroller
MICS
24
20
microphone supply output
STAB
25
21
reference current adjustment
VOL
27
23
loudspeaker volume adjustment
TXOUT
28
26
base microphone amplifier output
GATX
29
27
base microphone amplifier gain adjustment
TXIN
30
28
base microphone amplifier input
GNDTX
31
29
ground reference for microphone amplifiers
MIC−
32
30
negative handset microphone amplifier input
MIC+
33
31
positive handset microphone amplifier input
DTMF
34
32
dual tone multi-frequency input
QR
35
33
earpiece amplifier output
GARX
36
34
earpiece amplifier gain adjustment
RECO
37
35
receive amplifier output
HFTX
38
36
transmit input for auxiliary receive amplifier
HFC
39
37
logic input
PD
40
38
power-down input (active LOW)
1999 Apr 08
5
Philips Semiconductors
Product specification
Speech and loudspeaker amplifier IC with
auxiliary inputs/outputs and analog multiplexer
handbook, halfpage
MUTT 1
40 PD
MUTR 2
39 HFC
AUXC 3
38 HFTX
RAUX 4
37 RECO
TXAUX 5
36 GARX
AUXO 6
35 QR
HFRX 7
34 DTMF
n.c. 8
33 MIC+
n.c. 9
32 MIC−
n.c. 10
31 GNDTX
TEA1097TV
DLC 11
30 TXIN
ESI 12
29 GATX
VBB 13
28 TXOUT
GALS 14
27 VOL
n.c. 15
26 n.c.
LSAO 16
25 STAB
GND 17
24 MICS
SLPE 18
23 VDD
LN 19
22 AGC
REG 20
21 IR
MGL393
Fig.2 Pin configuration (VSO40).
1999 Apr 08
6
TEA1097
Philips Semiconductors
Product specification
TEA1097
34 GARX
35 RECO
36 HFTX
37 HFC
38 PD
39 MUTT
40 MUTR
41 AUXC
42 RAUX
handbook, full pagewidth
43 TXAUX
44 AUXO
Speech and loudspeaker amplifier IC with
auxiliary inputs/outputs and analog multiplexer
33 QR
HFRX 1
n.c. 2
32 DTMF
n.c. 3
31 MIC+
n.c 4
30 MIC−
n.c 5
29 GNDTX
n.c 6
28 TXIN
TEA1097H
n.c 7
27 GATX
26 TXOUT
DLC 8
ESI 9
25 n.c.
VBB 10
24 n.c.
23 VOL
n.c 22
STAB 21
MICS 20
VDD 19
IR 17
AGC 18
REG 16
LN 15
SLPE 14
GND 13
LSAO 12
GALS 11
FCA019
Fig.3 Pin configuration (QFP44).
The voltage between pins SLPE and REG is used by the
internal regulator to generate the stabilized reference
voltage and is decoupled by means of a capacitor between
pins LN and REG.
FUNCTIONAL DESCRIPTION
All data given in this chapter are typical values, except
when otherwise specified.
This capacitor converted into an equivalent inductance
realizes the set impedance conversion from its DC value
(RSLPE) to its AC value (done by an external impedance).
Supplies
LINE INTERFACE AND INTERNAL SUPPLY (PINS LN, SLPE,
REG AND VBB)
The IC regulates the line voltage at pin LN and it can be
calculated as follows:
The supply for the TEA1097 and its peripherals is obtained
from the line. The IC generates a stabilized reference
voltage (Vref) between pins SLPE and GND. This
reference voltage is equal to 3.7 V for line currents lower
than 18 mA. It than increases linearly with the line current
and reaches the value of 6.1 V for line currents higher than
45 mA. For line currents below 9 mA, the internal
reference voltage generating Vref is automatically adjusted
to a lower value. This is the so-called low voltage area and
the TEA1097 has limited performances in this area
(see Section “Low voltage behaviour”). This reference
voltage is temperature compensated.
1999 Apr 08
V LN = V ref + R SLPE × I SLPE
I SLPE = I line – I
x
where:
Iline = line current
Ix = current consumed on pin LN (approximately a
few µA)
ISLPE = current flowing through the RSLPE resistor.
7
Philips Semiconductors
Product specification
Speech and loudspeaker amplifier IC with
auxiliary inputs/outputs and analog multiplexer
TEA1097
The preferred value for RSLPE is 20 Ω. Changing this value
will affect more than the DC characteristics; it also
influences the transmit gains to the line, the gain control
characteristic, the sidetone level and the maximum output
swing on the line.
The aim of the current switch TR1 and TR2 is to reduce
distortion of large AC line signals. Current ISLPE is supplied
to VBB via TR1 when the voltage on SLPE is greater than
VBB + 0.25 V. When the voltage on SLPE is lower than this
value, the current ISLPE is shunted to GND via TR2.
As can be seen from Fig.4, the internal circuitry is supplied
by pin VBB, which is a strong supply point combined with
the line interface. The line current is flowing through the
RSLPE resistor and is sunk by the VBB voltage stabilizer,
becoming available for a loudspeaker amplifier or any
peripheral IC. Its voltage is equal to 3.0 V for line currents
lower than 18 mA. It than increases linearly with the line
current and reaches the value of 5.3 V for line currents
greater than 45 mA. It is temperature compensated.
The reference voltage Vref can be increased by connecting
an external resistor between pins REG and SLPE.
For large line currents, this increase can slightly affect
some dynamic performances such as maximum signal
level on the line for 2% THD. The voltage on pin VBB is not
affected by this external resistor. See Fig.5 for the main
DC voltages.
LN
handbook, full pagewidth
TR2
RSLPE
GND
20 Ω
TR1
SLPE
CREG
4.7 µF
VBB
E2
E1
TP1
D1
J1
R3
D1
REG
R1
TN2
R2
from
preamp
J2
TN1
GND
GND
Fig.4 Line interface principle.
1999 Apr 08
8
MGM298
Philips Semiconductors
Product specification
Speech and loudspeaker amplifier IC with
auxiliary inputs/outputs and analog multiplexer
TEA1097
FCA049
8
handbook, full pagewidth
LN
voltages
(V)
SLPE
6
VBB
4
VDD
MICS
2
0
0
0.01
0.02
0.03
0.04
0.05
0.06
Iline (A)
0.07
Fig.5 Main DC voltages as a function of line current.
EXTERNAL SUPPLY (PINS ESI AND VBB)
VDD SUPPLY FOR MICROCONTROLLERS (PIN VDD)
The TEA1097 can be supplied by the line as well as by
external power sources (voltage or current sources) that
must be connected to pin ESI.
The voltage on VDD supply point follows the voltage on VBB
with a difference equal to 250 mV (typ.) and is internally
limited to 3.35 V. This voltage is temperature
compensated. This supply point can provide a current up
to 3 mA (typ.). Its internal consumption stays low (a few
10 nA) as long as VDD does not exceed 1.5 V (see Fig.6).
The IC will choose which supply to use according to the
voltage it can provide. A voltage supply on ESI is efficient
only if its value is greater than the working voltage of the
internal VBB voltage stabilizer. Otherwise the IC continues
to be line powered. The current consumed on this source
is at least equal to the internal consumption. It depends on
the voltage difference between the value forced on ESI
and the working voltage of the internal stabilizer.
The current required increases with the voltage difference
to manage. The excess current compared to the internal
consumption becomes then available for other purposes
such as supplying a loudspeaker amplifier. The voltage
source should not exceed 6 V. If the value of the external
voltage source can be lower than the working voltage of
the internal stabilizer, an external diode is required to avoid
reverse current flowing into the external power supply.
An external voltage can be connected on VDD with limited
extra consumption on VDD (typically 100 µA). This voltage
source should not be lower than 3.5 V and higher than 6 V.
VBB and VDD can supply external circuits in the limits of
currents provided either from the line or from pin ESI,
taking into account the internal current consumption.
In case of current source, the voltage on VBB and ESI
depends on the current available. It is internally limited to
6.6 V. The current source should not exceed 140 mA.
1999 Apr 08
9
Philips Semiconductors
Product specification
Speech and loudspeaker amplifier IC with
auxiliary inputs/outputs and analog multiplexer
TEA1097
FCA050
10 8
handbook, full pagewidth
IDD
(pA)
10 7
10 6
10 5
10 4
10 3
10 2
10
1.0
1.5
2.5
2.0
VDD (V)
3.0
Fig.6 Current consumption on VDD.
When VBB becomes lower than 2.5 V, the TEA1097 is
forced in a low voltage mode whatever the levels on the
logic inputs are. It is a speech mode with reduced
performances only enabling the microphone channel
(between the MIC inputs and LN) and the earpiece
amplifier. These two channels are able to deliver signals
for line currents as small as 3 mA. The HFC input is tied to
GND sinking a current equal to 300 µA (typ.).
SUPPLY FOR MICROPHONE (PINS MICS AND GNDTX)
The MICS output can be used as a supply for an electret
microphone. Its voltage is equal to 2 V; it can source
current up to 1 mA and has an output impedance equal to
200 Ω.
LOW VOLTAGE BEHAVIOUR
For line currents below 9 mA, the reference voltage is
automatically adjusted to a lower value; the VBB voltage
follows the SLPE voltage with 250 mV difference.
The excess current available for other purposes than DC
biasing of the IC becomes small. In this low voltage area,
the IC has limited performances.
POWER-DOWN MODE (PINS PD AND AUXC)
To reduce current consumption during dialling or register
recall (flash), the TEA1097 is provided with a power-down
input (PD). When the voltage on pins PD and AUXC is
LOW, the current consumption from VBB and VDD is
reduced to 460 µA (typ.). Therefore a capacitor of 470 µF
connected to pin VBB is sufficient to power the TEA1097
during pulse dialling or flash. The PD input has a pull-up
structure, while AUXC has a pull-down structure. In this
mode, the capacitor CREG is internally disconnected.
When the VBB voltage reaches 2.7 V, the VBB detector of
the receive dynamic limiter on pin LSAO acts continuously,
discharging the capacitor at pin DLC. In the DC condition,
the loudspeaker is automatically disabled below this
voltage.
1999 Apr 08
10
Philips Semiconductors
Product specification
Speech and loudspeaker amplifier IC with
auxiliary inputs/outputs and analog multiplexer
TEA1097
RINGER MODE (PINS ESI, VBB, AUXC AND PD)
AUXILIARY TRANSMIT AMPLIFIER (PINS TXAUX AND LN)
The TEA1097 is designed to be activated during the
ringing phase. The loudspeaker amplifier can be used for
the melody signal. The IC must be powered by an external
supply on pin ESI, while applying a HIGH level on the logic
input AUXC and a LOW level on the PD input. Only the
HFRX input and the LSAO output are activated, in order to
limit the current consumption. Some dynamic limiting is
provided to prevent VBB from being discharged below
2.7 V.
The TEA1097 has an asymmetrical auxiliary input TXAUX.
The input impedance between pins TXAUX and GND is
20 kΩ (typ.). The voltage gain between pins TXAUX and
LN is set to 12.5 dB. Without limitation from the output, the
input stage can accommodate signals up to 1.2 V (RMS)
at room temperature for 2% of THD. The TXAUX input is
biased at two diodes voltage.
Automatic gain control is provided for line loss
compensation.
Transmit channels (pins MIC+, MIC−, DTMF, TXAUX
and LN)
MICROPHONE MONITORING ON TXOUT (PINS MIC+, MIC−
AND TXOUT)
HANDSET MICROPHONE AMPLIFIER (PINS MIC+, MIC− AND
LN)
The voltage gain between the microphone inputs MIC+,
MIC− and the output TXOUT is set to 49.8 dB. This
channel gives an image of the signal sent on the line while
speaking in the handset microphone. Using external
circuitry, this signal can be used for several purposes such
as sending dynamic limiting or anti-howling in a listening-in
application. The TXOUT output is biased at two diodes
voltage.
The TEA1097 has symmetrical microphone inputs.
The input impedance between MIC+ and MIC− is 70 kΩ
(typ.). The voltage gain between pins MIC+, MIC− and LN
is set to 44.3 dB. Without limitation from the output, the
microphone input stage can accommodate signals up to
18 mV (RMS) at room temperature for 2% of THD.
The microphone inputs are biased at one diode voltage.
The automatic gain control has no effect on these
channels.
Automatic gain control is provided for line loss
compensation.
Receive channels (pins IR, RAUX, RECO, GARX and
QR)
DTMF AMPLIFIER (PINS DTMF, LN AND RECO)
RX AMPLIFIER (PINS IR AND RECO)
The TEA1097 has an asymmetrical DTMF input. The input
impedance between pin DTMF and GND is 20 kΩ (typ.).
The voltage gain between pins DTMF and LN is set to
25.35 dB. Without limitation from the output, the input
stage can accommodate signals up to 180 mV (RMS) at
room temperature for 2% of THD.
The receive amplifier has one input IR which is referred to
the line. The input impedance between pins IR and LN is
20 kΩ (typ.) and the DC biasing between these pins is
equal to one diode voltage. The gain between pins IR
(referenced to LN) and RECO is typically equal to 29.7 dB.
Without limitation from the output, the input stage can
accommodate signals up to 50 mV (RMS) at room
temperature for 2% of THD.
When the DTMF amplifier is enabled, dialling tones may
be sent on the line. These tones can be heard in the
earpiece or in the loudspeaker at a low level. This is called
the confidence tone. The voltage attenuation between pins
DTMF and RECO is typically equal to −16.5 dB.
The DC biasing of this input is 0 V.
This receive amplifier has a rail-to-rail output RECO, which
is designed for use with high-ohmic (real) loads (larger
than 5 kΩ). This output is biased at two diodes voltage.
The automatic gain control has no effect on these
channels.
Automatic gain control is provided for line loss
compensation.
1999 Apr 08
11
Philips Semiconductors
Product specification
Speech and loudspeaker amplifier IC with
auxiliary inputs/outputs and analog multiplexer
EARPIECE AMPLIFIER (PINS GARX AND QR)
AUXILIARY AMPLIFIERS USING THE MICROPHONE INPUTS
(PINS MIC+, MIC− AND AUXO)
The earpiece amplifier is an operational amplifier having
its output (QR) and its inverting input (GARX) available.
Its input signal comes, via a decoupling capacitor, from the
receive RECO output. It is used in combination with two
resistors to get the required gain or attenuation compared
to the receive gain. It can be chosen between −3 and
+15 dB.
The auxiliary transmit amplifier using the microphone
MIC+ and MIC− inputs has a gain of 25.5 dB referenced to
AUXO. Without limitation from the output, the input stage
can accommodate signals up to 16 mV (RMS) at room
temperature for 2% of THD.
The automatic gain control has no effect on this channel.
Two external capacitors CGAR (connected between pins
GARX and QR) and CGARS (connected between pins
GARX and GND) ensure stability. The CGAR capacitor
provides a first-order low-pass filter. The cut-off frequency
corresponds to the time constant CGAR × Re2.
The relationship CGARS ≥ 10 × CGAR must be fulfilled.
AUXILIARY AMPLIFIERS USING HFTX (PINS HFTX AND
AUXO)
The auxiliary transmit amplifier using the HFTX input has
a gain of 15.2 dB referenced to AUXO.
The automatic gain control has no effect on this channel.
The earpiece amplifier has a rail-to-rail output QR, biased
at two diodes voltage. It is designed for use with low-ohmic
(real) loads (150 Ω) or capacitive loads (100 nF in series
with 100 Ω).
RX AMPLIFIER USING IR (PINS IR AND AUXO)
The auxiliary receive amplifier uses pin IR as input.
The input is referenced to pin LN and the DC biasing
between these two pins is one diode voltage. The voltage
gain between the input IR (referenced to LN) and the
output AUXO is typically equal to 32.8 dB, which
compensates typically the attenuation provided by the
anti-sidetone network.
When the amplifier is turned off, the signal present on the
earpiece is equal to the ratio between the load on QR and
Re1 + Re2
AUXILIARY RECEIVE AMPLIFIER (PINS RAUX AND RECO)
The auxiliary receive amplifier has an asymmetrical input
RAUX; it uses the RECO output. Its input impedance
between pins RAUX and GND is typically equal to 20 kΩ.
The voltage gain between pins RAUX and RECO is equal
to −2.4 dB. Without any limitation from the output, the input
stage can accommodate signals up to 0.95 V (RMS) at
room temperature for 2% of THD.
Automatic gain control is provided for line loss
compensation.
Automatic gain control (pin AGC)
The TEA1097 performs automatic line loss compensation,
which fits well with the true line attenuation. The automatic
gain control varies the gain of some transmit and receive
amplifiers in accordance with the DC line current.
The control range is 6.45 dB for Gv(MIC-LN), Gv(IR-RECO) and
Gv(IR-AUXO) and 6.8 dB for Gv(TXAUX-LN), which corresponds
approximately to a line length of 5.5 km for a 0.5 mm
twisted-pair copper cable.
This auxiliary amplifier has a rail-to-rail output RECO,
which is designed for use with high ohmic (real) loads
(larger than 5 kΩ). This output is biased at two diodes
voltage.
The automatic gain control has no effect on this channel.
To enable this gain control, the pin AGC must be shorted
to pin LN. The start current for compensation corresponds
to a line current equal to typically 23 mA and the stop
current to 57 mA. The start current can be increased by
connecting an external resistor between pins AGC and LN.
It can be increased to 40 mA (using a resistor typically
equal to 80 kΩ). The start and stop current will be
maintained in a ratio equal to 2.5. By leaving the AGC pin
open-circuit, the gain control is disabled and no line loss
compensation is performed.
Auxiliary amplifiers using AUXO (pins MIC+, MIC−,
HFTX, IR and AUXO)
The TEA1097 has an auxiliary output AUXO, biased at two
diodes voltage. This output stage is a rail-to-rail one,
designed for use with high-ohmic (real) loads (larger than
5 kΩ). The AUXO output amplifier is used in three different
channels, two transmit channels and one receive channel.
1999 Apr 08
TEA1097
12
Philips Semiconductors
Product specification
Speech and loudspeaker amplifier IC with
auxiliary inputs/outputs and analog multiplexer
The gain is proportional to the value of RGATX and equals
14.85 dB with RGATX = 30.1 kΩ. Without limitation from the
output, the microphone input stage can accommodate
signals up to 18 mV (RMS) at room temperature for 2% of
THD.
Base microphone channel (pins TXIN, GATX, TXOUT
and GNDTX) see Fig.7
The TEA1097 has an asymmetrical base microphone
input TXIN with an input resistance of 20 kΩ.
The DC biasing of the input is 0 V.
A capacitor can be connected in parallel with RGATX to
provide a 1st-order low-pass filter.
The output TXOUT is biased at two diodes voltage and has
a current capability equal to 20 µA (RMS). The gain of the
microphone amplifier (from pins TXIN to TXOUT) can be
adjusted from 0 to 31 dB to suit specific application
requirements.
handbook, full pagewidth
TEA1097
VBB
GATX
29
(27)
RMIC
CMIC
30 TXIN
(28)
V
I
I
V
TXOUT
28
(26)
GNDTX
31
(29)
MGL395
The pin numbers given in parenthesis refer to the TEA1097H.
Fig.7 Base microphone channel.
1999 Apr 08
13
RGATX
CGATX
Philips Semiconductors
Product specification
Speech and loudspeaker amplifier IC with
auxiliary inputs/outputs and analog multiplexer
TEA1097
Loudspeaker channel
handbook, full pagewidth
RGALS
CGALS
to
logic
14 GALS
(11)
VBB
16 LSAO
(12)
V
I
I
V
HFRX
CLSAO
11 DLC
(8)
DYNAMIC
LIMITER
VOLUME
CONTROL
CDLC
7
(1)
VOL 27
(23) R
VOL
MGL394
The pin numbers given in parenthesis refer to the TEA1097H.
Fig.8 Loudspeaker channel.
LOUDSPEAKER AMPLIFIER: PINS HFRX, GALS AND LSAO
DYNAMIC LIMITER (PIN DLC)
The TEA1097 has an asymmetrical input for the
loudspeaker amplifier with an input resistance of 20 kΩ
between pins HFRX and GND. It is biased at two diodes
voltage. The input stage can accommodate signals up to
580 mV (RMS) at room temperature for 2% of THD.
The dynamic limiter of the TEA1097 prevents clipping of
the loudspeaker output stage and protects the operation of
the circuit when the supply voltage at VBB falls below 2.7 V.
Hard clipping of the loudspeaker output stage is prevented
by rapidly reducing the gain when the output stage starts
to saturate. The time in which gain reduction is effected
(clipping attack time) is approximately a few milliseconds.
The circuit stays in the reduced gain mode until the peaks
of the loudspeaker signals no longer cause saturation.
The gain of the loudspeaker amplifier then returns to its
normal value within the clipping release time (typically
100 ms). Both attack and release times are proportional to
the value of the capacitor CDLC. The total harmonic
distortion of the loudspeaker output stage, in reduced gain
mode, stays below 1% up to 10 dB (min.) of input voltage
overdrive [providing VHFRX is below 580 mV (RMS)].
The rail-to-rail output stage is designed to power a
loudspeaker down to 8 Ω connected as a single-ended
load (between pins LSAO and GND). When the circuit is
externally supplied, the maximum output power is equal to
280 mW (typ.) for 6 V applied to pin ESI.
The gain of the loudspeaker amplifier can be adjusted from
0 to 35 dB to suit specific application requirements.
The gain from HFRX to LSAO is proportional to the value
of RGALS and equals 28 dB with RGALS = 255 kΩ.
A capacitor connected in parallel with RGALS is
recommended and provides a first-order low-pass filter.
When the supply voltage drops below an internal threshold
voltage of 2.7 V, the gain of the loudspeaker amplifier is
rapidly reduced (approximately 1 ms). When the supply
voltage exceeds 2.7 V, the gain of the loudspeaker
amplifier is increased again. By forcing a level lower than
0.2 V on pin DLC, the loudspeaker amplifier is muted.
VOLUME CONTROL (PIN VOL)
The loudspeaker amplifier gain can be adjusted with the
potentiometer RVOL. A linear potentiometer can be used to
obtain logarithmic control of the gain at the loudspeaker
amplifier. Each 1.9 kΩ increase of RVOL results in a gain
loss of 3 dB.
1999 Apr 08
14
Philips Semiconductors
Product specification
Speech and loudspeaker amplifier IC with
auxiliary inputs/outputs and analog multiplexer
TEA1097
Logic inputs
Table 1
Selection of transmit and receive channels for 12 different application modes
LOGIC INPUTS
FEATURES
APPLICATION EXAMPLES
PD
HFC
MUTT
MUTR
AUXC
0
X
X
X
1
0
X
X
X
0
1
0
0
0
0
DTMF to LN; DTMF to RECO;
QR and MICS are active
DTMF dialling in handset
1
0
0
1
0
MIC to AUXO; RAUX to RECO;
QR and MICS are active
cordless intercom with
corded handset
1
0
1
1
0
MIC to LN; IR to RECO;
handset conversation
IR to AUXO; MIC to TXOUT; QR and
MICS are active
1
0
1
0
1
TXAUX to LN and IR to AUXO
1
1
0
1
1
RAUX to RECO and HFRX to LSAO listening on the loudspeaker
1
1
0
0
1
TXAUX to LN; IR to AUXO;
RAUX to RECO; HFRX to LSAO
answering machine: play and
record messages; listen the
recorded message on the
loudspeaker
1
1
0
0
0
DTMF to LN; DTMF to RECO;
HFRX to LSAO; QR and MICS are
active
DTMF dialling in handsfree
or group listening modes
1
1
1
0
1
TXAUX to LN; IR to AUXO;
IR to RECO and HFRX to LSAO
answering machine: play and
record messages while
listening in the loudspeaker
1
1
0
1
0
TXIN to TXOUT; HFTX to AUXO;
RAUX to RECO; HFRX to LSAO
and MICS is active
cordless intercom with base
1
1
1
1
0
TXIN to TXOUT; TXAUX to LN;
IR to RECO; IR to AUXO;
HFRX to LSAO; MICS is active
digital handsfree
conversation
1
1
1
0
0
MIC to LN; IR to RECO;
IR to AUXO; HFRX to LSAO;
MIC to TXOUT; QR and MICS are
active
handset conversation with
group-listening
1999 Apr 08
HFRX to LSAO
ringer mode
flash, DC dialling
15
conversation using auxiliary
I/O; cordless: digital
handsfree in mobile
Philips Semiconductors
Product specification
Speech and loudspeaker amplifier IC with
auxiliary inputs/outputs and analog multiplexer
TEA1097
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134); DC levels are referenced to GND.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
positive continuous line voltage
−0.4
+12
V
repetitive line voltage during switch-on or line
interruption
−0.4
+13.2
V
VESI
positive continuous voltage on pin ESI
−0.4
+6
V
Ii(ESI)
input current at pin ESI
−
140
mA
Vn(max)
maximum voltage
on pins REG, SLPE, IR and AGC
−0.4
VLN + 0.4
V
on all other pins except VDD
−0.4
VBB + 0.4
V
TEA1097H
−
140
mA
TEA1097TV
−
130
mA
TEA1097TV
−
400
mW
TEA1097H
−
720
mW
VLN
Iline
Ptot
maximum line current for
Tamb = 75 °C
total power dissipation
Tstg
IC storage temperature
−40
+125
°C
Tamb
operating ambient temperature
−25
+75
°C
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
1999 Apr 08
PARAMETER
CONDITIONS
VALUE
UNIT
TEA1097TV
115
K/W
TEA1097H
63
K/W
thermal resistance from junction to ambient
16
in free air
Philips Semiconductors
Product specification
Speech and loudspeaker amplifier IC with
auxiliary inputs/outputs and analog multiplexer
TEA1097
FCA026
160
Iline
(mA)
handbook, full pagewidth
(1)
120
(2)
(3)
(4)
80
(5)
(6)
40
0
3.5
5.5
7.5
11.5
9.5
17
13.5
LINE
Tamb (°C)
Ptot (mW)
(1)
25
800
(2)
35
720
(3)
45
640
(4)
55
560
(5)
65
480
(6)
75
400
Fig.9 Safe operating area (TEA1097TV).
1999 Apr 08
VSLPE (V)
Philips Semiconductors
Product specification
Speech and loudspeaker amplifier IC with
auxiliary inputs/outputs and analog multiplexer
TEA1097
FCA025
160
handbook, full pagewidth
Iline
(mA)
(1)
(2)
120
(3)
(4)
80
(5)
40
0
3
4
5
6
7
8
10
9
18
12
VSLPE (V)
13
LINE
Tamb (°C)
Ptot (mW)
(1)
35
1304
(2)
45
1158
(3)
55
1012
(4)
65
866
(5)
75
720
Fig.10 Safe operating area (TEA1097H).
1999 Apr 08
11
Philips Semiconductors
Product specification
Speech and loudspeaker amplifier IC with
auxiliary inputs/outputs and analog multiplexer
TEA1097
CHARACTERISTICS
Iline = 15 mA; RSLPE = 20 Ω; Zline = 600 Ω; f = 1 kHz; Tamb = 25 °C; AGC pin connected to LN; PD = HIGH; HFC = LOW;
AUXC = LOW; MUTT = HIGH; MUTR = HIGH; measured according to test circuits; DC levels are referenced to GND;
unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supplies
LINE INTERFACE AND INTERNAL SUPPLY (PINS LN, SLPE, REG AND VBB)
VSLPE
stabilized voltage between SLPE Iline = 15 mA
and GND (Vref)
Iline = 70 mA
3.4
3.7
4
V
5.7
6.1
6.5
V
regulated supply voltage for
internal circuitry
Iline = 15 mA
2.75
3.0
3.25
V
Iline = 70 mA
4.9
5.3
5.7
V
Iline
line current for voltage increase
start current
−
18
−
mA
stop current
−
45
−
mA
∆VSLPE(T)
stabilized voltage variation with
temperature referenced to 25 °C
Tamb = −25 to +75 °C
−
±60
−
mV
∆VBB(T)
regulated voltage variation with
temperature referenced to 25 °C
Tamb = −25 to +75 °C
−
±30
−
mV
IBB
current available on pin VBB
speech mode
−
11
−
mA
digital handsfree mode;
HFC = HIGH
−
9.5
−
mA
Iline = 1 mA
−
1.55
−
V
Iline = 4 mA
−
2.35
−
V
Iline = 15 mA
3.7
4.0
4.3
V
Iline = 130 mA
−
8.7
9.3
V
−
−
6
V
VBB
VLN
line voltage
EXTERNAL SUPPLY (PIN ESI)
VESI
external voltage supply allowed
on pin ESI
voltage on pin ESI when
supplied by a current source
IESI = 140 mA except in
power-down mode
−
6.6
−
V
Ii(ESI)
input current on pin ESI
VESI = 3.5 V
−
3.1
−
mA
IESI(ext)
external current supply allowed
on pin ESI
−
−
140
mA
1999 Apr 08
19
Philips Semiconductors
Product specification
Speech and loudspeaker amplifier IC with
auxiliary inputs/outputs and analog multiplexer
SYMBOL
PARAMETER
CONDITIONS
TEA1097
MIN.
TYP.
MAX.
UNIT
SUPPLY FOR PERIPHERALS (PIN VDD)
VDD
regulated supply voltage on VDD
VBB > 3.35 V + 0.25 V
(typ.)
3.1
3.35
3.6
V
otherwise
−
VBB − 0.25 −
V
∆VDD(T)
regulated voltage variation with
temperature referenced to 25 °C
Tamb = −25 to +75 °C;
VBB > 3.35 V + 0.25 V
(typ.)
−
±30
−
mV
IDD
current consumption on VDD
in trickle mode;
Iline = 0 mA;
VDD = 1.5 V;
VBB discharging
−
15
150
nA
VDD > 3.35 V
60
100
−
µA
VDD = 3.35 V
−
−
−3
mA
IDD(o)
current available for peripherals
SUPPLY FOR MICROPHONE (PIN MICS)
VMICS
supply voltage for a microphone
−
2
−
V
IMICS
current available on MICS
−
−
−1
mA
V
POWER-DOWN INPUT (PIN PD)
VIL
LOW-level input voltage
−0.4
−
+0.3
VIH
HIGH-level input voltage
1.8
−
VBB + 0.4 V
Ii(pd)
input current
−
−3
−6
µA
IBB(pd)
current consumption on VBB
during power-down phase
−
460
−
µA
PD = LOW;
AUXC = LOW
RINGER MODE (PINS PD, AUXC, HFRX AND LSAO)
Ii(ESI)
input current on pin ESI
PD = LOW;
AUXC = HIGH;
VESI = 3.5 V
−
3.1
−
mA
Gv(HFRX-LSAO)
voltage gain from pin HFRX to
LSAO
PD = LOW;
AUXC = HIGH;
VESI = 3.5 V
VHFRX = 20 mV (RMS);
RGALS = 255 kΩ
−
28
−
dB
Preamplifier inputs (pins MIC+, MIC−, IR, DTMF, TXIN, HFTX, HFRX, TXAUX and RAUX)
Zi(MIC)
input impedance
differential between
pins MIC+ and MIC−
−
70
−
kΩ
single-ended between
pins MIC+/MIC− and GNDTX
−
35
−
kΩ
Zi(IR)
input impedance between pins
IR and LN
−
20
−
kΩ
Zi(DTMF)
input impedance between pins
DTMF and GND
−
20
−
kΩ
Zi(TXIN)
input impedance between pins
TXIN and GNDTX
−
20
−
kΩ
1999 Apr 08
20
Philips Semiconductors
Product specification
Speech and loudspeaker amplifier IC with
auxiliary inputs/outputs and analog multiplexer
SYMBOL
PARAMETER
CONDITIONS
TEA1097
MIN.
TYP.
MAX.
UNIT
Zi(HFTX)
input impedance between pins
HFTX and GND
−
20
−
kΩ
Zi(HFRX)
input impedance between pins
HFRX and GND
−
20
−
kΩ
Zi(TXAUX)
input impedance between pins
TXAUX and GND
−
20
−
kΩ
Zi(RAUX)
input impedance between pins
RAUX and GND
−
20
−
kΩ
TX amplifiers; see note 1
TX HANDSET MICROPHONE AMPLIFIER (PINS MIC+, MIC− AND LN)
Gv(MIC-LN)
voltage gain from pin MIC+/MIC− VMIC = 5 mV (RMS)
to LN
43.3
44.3
45.3
dB
∆Gv(f)
gain variation with frequency
referenced to 1 kHz
f = 300 to 3400 Hz
−
±0.25
−
dB
∆Gv(T)
gain variation with temperature
referenced to 25 °C
Tamb = −25 to +75 °C
−
±0.25
−
dB
CMRR
common mode rejection ratio
−
80
−
dB
THD
total harmonic distortion at pin
LN
VLN = 1.4 V (RMS)
−
−
2
%
Iline = 4 mA;
VLN = 0.12 V (RMS)
−
−
10
%
Vno(LN)
noise output voltage at pin LN;
pins MIC+/MIC− shorted
through 200 Ω
psophometrically
weighted (p53 curve)
−
−77.5
−
dBmp
∆Gv(mute)
gain reduction if not activated
HFC = LOW;
MUTT = LOW;
MUTR = LOW;
AUXC = LOW
60
80
−
dB
DTMF AMPLIFIER (PINS DTMF, LN AND RECO)
Gv(DTMF-LN)
voltage gain from pin DTMF to
LN
VDTMF = 50 mV (RMS)
24.35 25.35
26.35
dB
∆Gv(f)
gain variation with frequency
referenced to 1 kHz
f = 300 to 3400 Hz
−
±0.25
−
dB
∆Gv(T)
gain variation with temperature
referenced to 25 °C
Tamb = −25 to +75 °C
−
±0.25
−
dB
∆Gv(mute)
gain reduction if not activated
HFC = LOW;
MUTT = HIGH;
MUTR = HIGH;
AUXC = LOW
60
80
−
dB
Gv(DTMF-RECO)
voltage gain from pin DTMF to
RECO
VDTMF = 50 mV (RMS)
−
−16.5
−
dB
1999 Apr 08
21
Philips Semiconductors
Product specification
Speech and loudspeaker amplifier IC with
auxiliary inputs/outputs and analog multiplexer
SYMBOL
PARAMETER
CONDITIONS
TEA1097
MIN.
TYP.
MAX.
UNIT
TX AUXILIARY AMPLIFIER USING TXAUX (PINS TXAUX AND LN)
Gv(TXAUX-LN)
voltage gain from pin TXAUX to
LN
VTXAUX = 0.1 V (RMS)
11.5
12.5
13.5
dB
∆Gv(f)
gain variation with frequency
referenced to 1 kHz
f = 300 to 3400 Hz
−
±0.25
−
dB
∆Gv(T)
gain variation with temperature
referenced to 25 °C
Tamb = −25 to +75 °C
−
±0.25
−
dB
THD
total harmonic distortion at LN
VLN = 1.4 V (RMS)
−
−
2
%
VTXAUX(rms)
maximum input voltage at
TXAUX (RMS value)
Iline = 70 mA; THD = 2%
−
1.2
−
V
Vno(LN)
noise output voltage at pin LN;
pin TXAUX shorted to GND
through 200 Ω in series with
10 µF
psophometrically
weighted (p53 curve)
−
−80.5
−
dBmp
∆Gv(mute)
gain reduction if not activated
HFC = LOW;
MUTT = LOW;
MUTR = LOW;
AUXC = LOW
60
80
−
dB
MICROPHONE MONITORING ON TXOUT (PINS MIC+, MIC− AND TXOUT)
Gv(MIC-TXOUT)
voltage gain from pin MIC+/MIC− VMIC = 2 mV (RMS)
to TXOUT
48.3
49.8
51.3
dB
∆Gv(f)
gain variation with frequency
referenced to 1 kHz
f = 300 to 3400 Hz
−
±0.1
−
dB
∆Gv(T)
gain variation with temperature
referenced to 25 °C
Tamb = −25 to +75 °C
−
±0.35
−
dB
RX amplifiers; see note 1
RX AMPLIFIERS USING IR (PINS IR AND RECO)
Gv(IR-RECO)
voltage gain from pin IR
(referenced to LN) to RECO
VIR = 15 mV (RMS)
28.7
29.7
30.7
dB
∆Gv(f)
gain variation with frequency
referenced to 1 kHz
f = 300 to 3400 Hz
−
±0.25
−
dB
∆Gv(T)
gain variation with temperature
referenced to 25 °C
Tamb = −25 to +75 °C
−
±0.3
−
dB
VIR(rms)(max)
maximum input voltage on IR
(referenced to LN) (RMS value)
Iline = 70 mA; THD = 2%
−
50
−
mV
VRECO(rms)(max)
maximum output voltage on pin
RECO (RMS value)
THD = 2%
0.75
0.9
−
V
Vno(RECO)(rms)
noise output voltage at pin
RECO; pin IR is an open-circuit
(RMS value)
psophometrically
weighted (p53 curve)
−
−88
−
dBVp
∆Gv(mute)
gain reduction if not activated
HFC = LOW;
MUTT = LOW;
MUTR = LOW;
AUXC = LOW
60
80
−
dB
1999 Apr 08
22
Philips Semiconductors
Product specification
Speech and loudspeaker amplifier IC with
auxiliary inputs/outputs and analog multiplexer
SYMBOL
PARAMETER
CONDITIONS
TEA1097
MIN.
TYP.
MAX.
UNIT
RX EARPIECE AMPLIFIER (PINS GARX AND QR)
∆Gv(RECO-QR)
gain voltage range between pins
RECO and QR
VQR(rms)(max)
maximum output voltage on pin
QR (RMS value)
Vno(QR)(rms)
noise output voltage at pin QR;
pin IR is an open-circuit
(RMS value)
−3
−
+15
dB
sine wave drive;
RL = 150 Ω; THD < 2%
0.75
0.9
−
V
Gv(QR) = 0 dB;
psophometrically
weighted (p53 curve)
−
−88
−
dBVp
RX AMPLIFIER USING RAUX (PINS RAUX AND RECO)
Gv(RAUX-RECO)
voltage gain from pin RAUX to
RECO
VRAUX = 0.4 V (RMS)
−3.7
−2.4
−1.1
dB
∆Gv(f)
gain variation with frequency
referenced to 1 kHz
f = 300 to 3400 Hz
−
±0.25
−
dB
∆Gv(T)
gain variation with temperature
referenced to 25 °C
Tamb = −25 to +75 °C
−
±0.25
−
dB
VRAUX(rms)(max)
maximum input voltage on RAUX THD = 2%
(RMS value)
−
0.95
−
V
Vno(RECO)(rms)
noise output voltage at pin
RECO; pin RAUX shorted to
GND through 200 Ω in series
with 10 µF (RMS value)
psophometrically
weighted (p53 curve)
−
−100
−
dBVp
∆Gv(mute)
gain reduction if not activated
HFC = LOW;
MUTT = LOW;
MUTR = LOW;
AUXC = LOW
60
80
−
dB
Auxiliary amplifiers using AUXO; see note 1
TX AUXILIARY AMPLIFIER USING MIC+ AND MIC− (PINS MIC+, MIC− AND AUXO)
Gv(MIC-AUXO)
voltage gain from pin MIC+/MIC− VMIC = 10 mV (RMS)
to AUXO
24.2
25.5
26.8
dB
∆Gv(f)
gain variation with frequency
referenced to 1 kHz
f = 300 to 3400 Hz
−
±0.1
−
dB
∆Gv(T)
gain variation with temperature
referenced to 25 °C
Tamb = −25 to +75 °C
−
±0.3
−
dB
VMIC(rms)
maximum input voltage on
MIC+/MIC− (RMS value)
THD = 2%
−
16
−
mV
Vno(AUXO)(rms)
noise output voltage at pin
AUXO; pins MIC+/MIC− shorted
to GNDTX through 200 Ω in
series with 10 µF (RMS value)
psophometrically
weighted (p53 curve)
−
−91
−
dBVp
1999 Apr 08
23
Philips Semiconductors
Product specification
Speech and loudspeaker amplifier IC with
auxiliary inputs/outputs and analog multiplexer
SYMBOL
PARAMETER
CONDITIONS
TEA1097
MIN.
TYP.
MAX.
UNIT
TX AUXILIARY AMPLIFIER USING HFTX (PINS HFTX AND AUXO)
Gv(HFTX-AUXO)
voltage gain from pin HFTX to
AUXO
VHFTX = 100 mV (RMS)
14.2
15.2
16.2
dB
∆Gv(f)
gain variation with frequency
referenced to 1 kHz
f = 300 to 3400 Hz
−
±0.1
−
dB
∆Gv(T)
gain variation with temperature
referenced to 25 °C
Tamb = −25 to +75 °C
−
±0.1
−
dB
VAUXO(rms)
maximum output voltage on pin
AUXO (RMS value)
THD = 2%
0.8
0.9
−
V
Vno(AUXO)(rms)
noise output voltage at pin
AUXO; pin HFTX shorted to
GND through 200 Ω in series
with 10 µF (RMS value)
psophometrically
weighted (p53 curve)
−
−91.5
−
dBVp
∆Gv(mute)
gain reduction if not activated
HFC = LOW;
MUTT = LOW;
MUTR = HIGH;
AUXC = LOW
60
80
−
dB
RX AMPLIFIER USING IR (PINS IR AND AUXO)
Gv(IR-AUXO)
voltage gain from pin IR
(referenced to LN) to AUXO
VIR = 3 mV (RMS)
31.6
32.8
34
dB
∆Gv(f)
gain variation with frequency
referenced to 1 kHz
f = 300 to 3400 Hz
−
±0.1
−
dB
∆Gv(T)
gain variation with temperature
referenced to 25 °C
Tamb = −25 to +75 °C
−
±0.3
−
dB
VAUXO(rms)
maximum output voltage on
AUXO (RMS value)
THD = 2%
0.8
0.9
−
V
Vno(AUXO)(rms)
noise output voltage at pin
AUXO; pin IR is an open-circuit
(RMS value)
psophometrically
weighted (p53 curve)
−
−85
−
dBVp
∆Gv(mute)
gain reduction if not activated
HFC = HIGH;
MUTT = LOW;
MUTR = HIGH;
AUXC = HIGH
60
80
−
dB
Iline = 70 mA; on
Gv(MIC-LN), Gv(IR-RECO)
and Gv(IR-AUXO)
5.45
6.45
7.45
dB
Iline = 70 mA;
Gv(TXAUX-LN)
5.8
6.8
7.8
dB
Automatic Gain Control (pin AGC)
∆Gv(trx)
gain control range for transmit
and receive amplifiers affected
by the AGC; with respect to
Iline = 15 mA
Istart
highest line current for
maximum gain
−
23
−
mA
Istop
lowest line current for maximum
gain
−
57
−
mA
1999 Apr 08
24
Philips Semiconductors
Product specification
Speech and loudspeaker amplifier IC with
auxiliary inputs/outputs and analog multiplexer
SYMBOL
PARAMETER
CONDITIONS
TEA1097
MIN.
TYP.
MAX.
UNIT
Logic inputs (pins HFC, AUXC, MUTT and MUTR)
VIL
LOW-level input voltage
−0.4
−
+0.3
VIH
HIGH-level input voltage
1.8
−
VBB + 0.4 V
Ii
input current
V
for pins HFC and AUXC
−
3
6
µA
for pins MUTT and MUTR
−
−2.5
−6
µA
13.15 14.85
16.55
dB
−15
−
+16
dB
Base microphone amplifier (pins TXIN, TXOUT and GATX); see note 1
Gv(TXIN-TXOUT)
voltage gain from pin TXIN to
TXOUT
VTXIN = 3 mV (RMS);
RGATX = 30.1 kΩ
∆Gv
voltage gain adjustment with
RGATX
∆Gv(f)
gain variation with frequency
referenced to 1 kHz
f = 300 to 3400 Hz
−
±0.1
−
dB
∆Gv(T)
gain variation with temperature
referenced to 25 °C
Tamb = −25 to +75 °C
−
±0.15
−
dB
Vno(TXOUT)(rms)
noise output voltage at pin
TXOUT; pin TXIN is shorted
through 200 Ω in series with
10 µF to GNDTX (RMS value)
psophometrically
weighted (p53 curve)
−
−101
−
dBVp
∆Gv(mute)
gain reduction if not activated
HFC = HIGH;
MUTT = LOW;
MUTR = LOW;
AUXC = LOW
60
80
−
dB
25.5
28
30.5
dB
−28
−
+7
dB
Loudspeaker amplifier (pins HFRX, LSAO, GALS and VOL); see note 1
Gv(HFRX-LSAO)
voltage gain from pin HFRX to
LSAO
∆Gv
voltage gain adjustment with
RGALS
∆Gv(f)
gain variation with frequency
referenced to 1 kHz
f = 300 to 3400 Hz
−
±0.3
−
dB
∆Gv(T)
gain variation with temperature
referenced to 25 °C
Tamb = −25 to +75 °C
−
±0.3
−
dB
∆Gv(vol)
voltage gain variation related to
∆RVOL = 1.9 kΩ
−
−3
−
dB
Iline = 70 mA;
RGALS = 33 kΩ; for 2%
THD in the input stage
−
580
−
mV
−
−79
−
dBVp
Iline = 18 mA
−
0.9
−
V
Iline = 30 mA
−
1.2
−
V
Iline > 50 mA
−
1.6
−
V
V(HFRX)(rms)(max) maximum input voltage at pin
HFRX (RMS value)
VHFRX = 20 mV (RMS);
RGALS = 255 kΩ
Vno(LSAO)(rms)
noise output voltage at pin
LSAO; pin HFRX is open-circuit
(RMS value)
psophometrically
weighted (p53 curve)
VLSAO(rms)
output voltage (RMS value)
without external supply on pin
ESI
IBB = 0 mA; IDD = 1 mA
1999 Apr 08
25
Philips Semiconductors
Product specification
Speech and loudspeaker amplifier IC with
auxiliary inputs/outputs and analog multiplexer
SYMBOL
ILSAO(max)
PARAMETER
maximum output current at pin
LSAO (peak value)
CONDITIONS
TEA1097
MIN.
TYP.
MAX.
UNIT
300
−
mA
when VHFRX jumps from −
20 mV to 20 mV + 10 dB
−
5
ms
−
1
−
ms
external supply on ESI
150
Dynamic limiter (pins LSAO and DLC); see note 1
tatt
attack time
when VBB jumps below
VBB(th)
trel
release time
when VHFRX jumps from −
20 mV + 10 dB to 20 mV
100
−
ms
THD
total harmonic distortion at
VHFRX = 20 mV + 10 dB
t > tatt
−
0.1
2
%
VBB(th)
VBB limiter threshold
−
2.7
−
V
−0.4
−
+0.2
V
Mute Loudspeaker (pin DLC); see note 1
VDLC(th)
threshold voltage required on pin
DLC to obtain mute receive
condition
IDLC(th)
threshold current sourced by pin
DLC in mute receive condition
VDLC = 0.2 V
−
100
−
µA
∆Gvrx(mute)
voltage gain reduction in mute
receive condition
VDLC = 0.2 V
60
80
−
dB
Note
1. When the channel is enabled according to Table 1.
1999 Apr 08
26
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10 V
Cemc
SLPE
10 nF
CIR
Cimp
Cexch
100 µF
100 µF
4.7 µF
20 Ω
IR
100 nF
18
(14)
REG
20
(16)
AGC
22
(18)
LN
19
(15)
ESI
12
(9)
CVDD
CVBB
470 µF
VBB
DESI
13
(10)
47 µF
VDD
23
(19)
40 PD
(38)
39 HFC
21
(17)
(37)
CMICS
4.7 µF
MICS
MIC+
RMIC
200 Ω
MIC−
VMIC
CHFTX
HFTX
100 nF
TXOUT
27
CGATX
RGATX
100 pF
30.1 kΩ
GATX
CTXIN
TXIN
100 nF
VHFTX
CDTMF
DTMF
100 nF
VTXIN
CTXAUX
VDTMF
TXAUX
100 nF
CRAUX
VTXAUX
RAUX
100 nF
AUXC
3
(41)
MUTT
1
(39)
MUTR
2
(40)
CAUXO
10 µF
AUXO
6
(44)
24
(20)
33
(31)
32
(30)
38
(36)
35
(33)
TEA1097
28
(26)
36
(34)
from
controller
RAUXO
10 kΩ
QR
GARX
CGAR
100 pF
Re2
100 kΩ
CGARS
1 nF
Re1
100 kΩ
CRXE
29
(27)
37
(35)
30
(28)
7
(1)
34
(32)
14
(11)
5
(43)
4
(42) 17
(13)
GND
16
(12)
31
(29)
25
(21)
27
(23)
GNDTX STAB
11
(8)
VOL
DLC
VRAUX
RVOL
0 to
22 kΩ
HFRX
CHFRX
100 nF
GALS
RGALS
LSAO
255 kΩ
CGALS
150 pF
CGALS
220 µF
RLSAO
8Ω
CDLC
470
nF
TEA1097
Fig.11 Test circuit.
4.7 µF
VHFRX
FCA001
The pin numbers given in parenthesis refer to the TEA1097H.
CQR
Product specification
RSTAB
3.65
kΩ
100 nF
RECO
RQR
150 Ω
Philips Semiconductors
Dz
Vd
CREG
RSLPE
VIR
Speech and loudspeaker amplifier IC with
auxiliary inputs/outputs and analog multiplexer
Zimp
620 Ω
i = 15 mA
J_line
TEST AND APPLICATION INFORMATION
600 Ω
ok, full pagewidth
1999 Apr 08
Zexch
external
supply
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RSLPE
Rbal1
130 Ω
Zimp
620 Ω
Dz
Vd
10 V
Rast2
3.92 kΩ
CIR
Cimp
22 µF
D2
4.7 µF
Rast3
IR
SLPE
21
(17)
18
(14)
REG
20
(16)
AGC
22
(18)
LN
19
(15)
ESI
12
(9)
CVDD
47 µF
VDD
CVBB
470 µF
VBB
DESI
392 Ω
Cemc
10 nF
external
supply
CREG
20 Ω
13
(10)
23
(19)
100 nF
39 HFC
(37)
3 AUXC
Rast1
130 kΩ
D3
40 PD
(38)
from
controller
(41)
1 MUTT
(39)
2 MUTR
CMICS
10 µF
MICS
24
(20)
Rtx2
MIC+
33
(31)
MICS
(40)
RMICP
Ctx2
1 kΩ
handset
microphone
Cmich
33 nF
RMICM
22 nF
15 kΩ
Ctx1
Rtx1
22 nF
15 kΩ
Rtx3
8.2
kΩ
6
(44)
32
MIC− (30)
35
(33)
1 kΩ
TEA1097
28
CHFTX
HFTX
38
(36)
TXOUT
28
(26)
A
100 nF
to digital handsfree
B
RGATX
30.1 kΩ GATX
from MICS
Rbmics
CTXIN
2 kΩ
base
microphone
Cmicb
30
(28)
DTMF
34
(32)
CDTMF
100 nF
D1
D4
from digital
answering machine
CQR
4.7 µF
QR
GARX
CGAR
100 pF
Re2
100 kΩ
CGARS
Re1
100 kΩ
1 nF
CRXE
37
(35)
29
(27)
TXIN
to digital
answering machine
or digital handsfree
100 nF
7
(1)
RECO
100 nF
HFRX
from digital
handsfree
100 nF
22 nF
from digital
answering machine
or digital handsfree
36
(34)
C
AUXO AUXO
Philips Semiconductors
Cbal
220 nF
Rbal2
820 Ω
Speech and loudspeaker amplifier IC with
auxiliary inputs/outputs and analog multiplexer
1999 Apr 08
handbook, full pagewidth
CTXAUX
TXAUX
14
(11)
16
(12)
5
(43)
GALS
RGALS
CGALS
CLSAO
255 kΩ
LSAO
150 pF
220 µF
100 nF
CRAUX
100 nF
RAUX
4
(42) 17
(13)
GND
31
(29)
25
(21)
GNDTX STAB
27
(23)
11
(8)
VOL
Fig.12 Basic application diagram.
0 to
22 kΩ
CDLC
470
nF
Product specification
The pin numbers given in parenthesis refer to the TEA1097H.
RVOL
TEA1097
RSTAB
3.65
kΩ
MGL396
DLC
Philips Semiconductors
Product specification
Speech and loudspeaker amplifier IC with
auxiliary inputs/outputs and analog multiplexer
TEA1097
PACKAGE OUTLINES
VSO40: plastic very small outline package; 40 leads
SOT158-1
D
E
A
X
c
y
HE
v M A
Z
40
21
Q
A2
A
(A 3)
A1
θ
pin 1 index
Lp
L
1
detail X
20
w M
bp
e
0
5
10 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D (1)
E (2)
e
HE
L
Lp
Q
v
w
y
Z (1)
mm
2.70
0.3
0.1
2.45
2.25
0.25
0.42
0.30
0.22
0.14
15.6
15.2
7.6
7.5
0.762
12.3
11.8
2.25
1.7
1.5
1.15
1.05
0.2
0.1
0.1
0.6
0.3
0.012 0.096
0.017 0.0087 0.61
0.010
0.004 0.089
0.012 0.0055 0.60
0.30
0.29
0.03
0.48
0.46
0.067
0.089
0.059
inches
0.11
0.045
0.024
0.008 0.004 0.004
0.041
0.012
θ
7o
0o
Notes
1. Plastic or metal protrusions of 0.4 mm maximum per side are not included.
2. Plastic interlead protrusions of 0.25 mm maximum per side are not included.
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
92-11-17
95-01-24
SOT158-1
1999 Apr 08
EUROPEAN
PROJECTION
29
Philips Semiconductors
Product specification
Speech and loudspeaker amplifier IC with
auxiliary inputs/outputs and analog multiplexer
TEA1097
QFP44: plastic quad flat package; 44 leads (lead length 1.3 mm); body 10 x 10 x 1.75 mm
SOT307-2
c
y
X
A
33
23
34
22
ZE
e
E HE
A A2
wM
(A 3)
A1
θ
bp
Lp
pin 1 index
L
12
44
1
detail X
11
wM
bp
e
ZD
v M A
D
B
HD
v M B
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D (1)
E (1)
e
HD
HE
L
Lp
v
w
y
mm
2.10
0.25
0.05
1.85
1.65
0.25
0.40
0.20
0.25
0.14
10.1
9.9
10.1
9.9
0.8
12.9
12.3
12.9
12.3
1.3
0.95
0.55
0.15
0.15
0.1
Z D (1) Z E (1)
1.2
0.8
1.2
0.8
θ
o
10
0o
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
95-02-04
97-08-01
SOT307-2
1999 Apr 08
EUROPEAN
PROJECTION
30
Philips Semiconductors
Product specification
Speech and loudspeaker amplifier IC with
auxiliary inputs/outputs and analog multiplexer
If wave soldering is used the following conditions must be
observed for optimal results:
SOLDERING
Introduction to soldering surface mount packages
• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “Data Handbook IC26; Integrated Circuit Packages”
(document order number 9398 652 90011).
• For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;
There is no soldering method that is ideal for all surface
mount IC packages. Wave soldering is not always suitable
for surface mount ICs, or for printed-circuit boards with
high population densities. In these situations reflow
soldering is often used.
– smaller than 1.27 mm, the footprint longitudinal axis
must be parallel to the transport direction of the
printed-circuit board.
The footprint must incorporate solder thieves at the
downstream end.
Reflow soldering
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
• For packages with leads on four sides, the footprint must
be placed at a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
Several methods exist for reflowing; for example,
infrared/convection heating in a conveyor type oven.
Throughput times (preheating, soldering and cooling) vary
between 100 and 200 seconds depending on heating
method.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 230 °C.
Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Wave soldering
Manual soldering
Conventional single wave soldering is not recommended
for surface mount devices (SMDs) or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.
Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.
To overcome these problems the double-wave soldering
method was specifically developed.
1999 Apr 08
TEA1097
When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.
31
Philips Semiconductors
Product specification
Speech and loudspeaker amplifier IC with
auxiliary inputs/outputs and analog multiplexer
TEA1097
Suitability of surface mount IC packages for wave and reflow soldering methods
SOLDERING METHOD
PACKAGE
REFLOW(1)
WAVE
BGA, SQFP
not suitable
HLQFP, HSQFP, HSOP, HTSSOP, SMS not
PLCC(3),
SO, SOJ
suitable
suitable(2)
suitable
suitable
suitable
LQFP, QFP, TQFP
not recommended(3)(4)
suitable
SSOP, TSSOP, VSO
not recommended(5)
suitable
Notes
1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”.
2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).
3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Apr 08
32
Philips Semiconductors
Product specification
Speech and loudspeaker amplifier IC with
auxiliary inputs/outputs and analog multiplexer
NOTES
1999 Apr 08
33
TEA1097
Philips Semiconductors
Product specification
Speech and loudspeaker amplifier IC with
auxiliary inputs/outputs and analog multiplexer
NOTES
1999 Apr 08
34
TEA1097
Philips Semiconductors
Product specification
Speech and loudspeaker amplifier IC with
auxiliary inputs/outputs and analog multiplexer
NOTES
1999 Apr 08
35
TEA1097
Philips Semiconductors – a worldwide company
Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,
Tel. +61 2 9805 4455, Fax. +61 2 9805 4466
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,
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220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773
Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 68 9211, Fax. +359 2 68 9102
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
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72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
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Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,
Tel. +45 33 29 3333, Fax. +45 33 29 3905
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France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,
Tel. +33 1 4099 6161, Fax. +33 1 4099 6427
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 2353 60, Fax. +49 40 2353 6300
Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. +27 11 470 5911, Fax. +27 11 470 5494
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 93 301 6312, Fax. +34 93 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 62 5344, Fax.+381 11 63 5777
For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Internet: http://www.semiconductors.philips.com
© Philips Electronics N.V. 1999
SCA63
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
465002/750/03/pp36
Date of release: 1999 Apr 08
Document order number:
9397 750 05008