INTEGRATED CIRCUITS DATA SHEET TEA1118; TEA1118A Versatile cordless transmisssion circuit Product specification Supersedes data of 1996 Nov 26 File under Integrated Circuits, IC03 1997 Jul 14 Philips Semiconductors Product specification Versatile cordless transmisssion circuit TEA1118; TEA1118A FEATURES GENERAL DESCRIPTION • Low DC line voltage; operates down to 1.6 V (excluding polarity guard) The TEA1118 and TEA1118A are bipolar integrated circuits that perform all speech and line interface functions required in cordless telephone base stations. The ICs operate at a line voltage down to 1.6 V DC (with reduced performance) to facilitate the use of telephone sets connected in parallel. • Voltage regulator with adjustable DC voltage • Provides a supply for external circuits • Symmetrical high impedance transmit inputs (62.5 kΩ) with large signals handling capabilities [up to 1 V (RMS value) with less than 2% THD] The TEA1118A offers in addition to the TEA1118 electronic switching between speech and dialling. Moreover the transmit amplifier can be disabled during speech condition by means of a transmit mute function. • Receive amplifier for dynamic, magnetic or piezoelectric earpieces • AGC line loss compensation for transmit and earpiece amplifiers All statements and values refer to all versions unless otherwise specified. • DTMF input with confidence tone (TEA1118A only) • MUTE input for pulse or DTMF dialling (TEA1118A only) • Transmit mute function, also enabling the DTMF input (TEA1118A only). APPLICATIONS • Cordless telephone base stations • Fax machines • Answering machines. QUICK REFERENCE DATA Iline = 15 mA; VEE = 0 V; RSLPE = 20 Ω; AGC pin connected to VEE; Zline = 600 Ω; f = 1 kHz; Tamb = 25 °C; unless otherwise specified. SYMBOL Iline PARAMETER line current operating range VLN DC line voltage CONDITIONS MIN. TYP. MAX. UNIT normal operation 11 − 140 mA with reduced performance 1 − 11 mA 3.35 3.65 3.95 V ICC internal current consumption VCC = 2.9 V − 1.15 1.4 mA VCC supply voltage for peripherals IP = 0 mA − 2.9 − V Gvtrx typical voltage gain range ∆Gvtrx 1997 Jul 14 transmit amplifier (TEA1118A only) VTX = 200 mV (RMS) − − 11.3 dB transmit amplifier (TEA1118 only) VTX = 200 mV (RMS) 5.3 − 11.3 dB receive amplifier VIR = 4 mV (RMS) 19 − 31 dB Iline = 75 mA − 5.8 − dB gain control range for transmit and receive amplifiers with respect to Iline = 15 mA 2 Philips Semiconductors Product specification Versatile cordless transmisssion circuit TEA1118; TEA1118A ORDERING INFORMATION TYPE NUMBER PACKAGE NAME TEA1118M SSOP16 TEA1118T SO14 TEA1118AM SSOP16 TEA1118AT SO14 DESCRIPTION VERSION plastic shrink small outline package; 16 leads; body width 4.4 mm SOT369-1 plastic small outline package; 14 leads; body width 3.9 mm SOT108-1 plastic shrink small outline package; 16 leads; body width 4.4 mm SOT369-1 plastic small outline package; 14 leads; body width 3.9 mm SOT108-1 BLOCK DIAGRAMS GAR handbook, full pagewidth QR VCC IR V−>I LN CURRENT REFERENCE TX+ GAT V−>I TX− REG AGC CIRCUIT TEA1118M TEA1118T LOW VOLTAGE CIRCUIT MBH273 VEE SLPE AGC Fig.1 Block diagram (TEA1118). 1997 Jul 14 3 Philips Semiconductors Product specification Versatile cordless transmisssion circuit TEA1118; TEA1118A GAR QR MUTE handbook, full pagewidth IR V−>I VCC V−>I LN DTMF ATTENUATOR CURRENT REFERENCE V−>I TX+ REG V−>I TX− TMUTE TRANSMIT MUTE AGC CIRCUIT TEA1118AM TEA1118AT LOW VOLTAGE CIRCUIT MBH272 VEE SLPE AGC Fig.2 Block diagram (TEA1118A). 1997 Jul 14 4 Philips Semiconductors Product specification Versatile cordless transmisssion circuit TEA1118; TEA1118A PINNING TEA1118 TEA1118A SYMBOL DESCRIPTION SO14 SSOP16 SO14 SSOP16 LN 1 1 1 1 positive line terminal SLPE 2 2 2 2 slope (DC resistance) adjustment REG 3 3 3 3 line voltage regulator decoupling GAT 4 4 − − transmit gain adjustment TMUTE − − 4 5 transmit mute input DTMF − − 5 6 dual-tone multi-frequency input MUTE − − 6 8 mute input to select speech or dialling mode IR 7 9 7 9 receive amplifier input AGC 8 10 8 10 automatic gain control/line loss compensation TX− 9 11 9 11 inverting transmit amplifier input TX+ 10 12 10 12 non-inverting transmit amplifier input VEE 11 13 11 13 negative line terminal QR 12 14 12 14 receive amplifier output GAR 13 15 13 15 receive gain adjustment VCC 14 16 14 16 supply voltage for speech circuit and peripherals n.c. 5 and 6 5 to 8 − 4 and 7 1997 Jul 14 5 not connected Philips Semiconductors Product specification Versatile cordless transmisssion circuit TEA1118; TEA1118A handbook, halfpage LN 1 16 VCC 15 GAR handbook, halfpage LN 1 14 VCC SLPE 2 SLPE 2 13 GAR REG 3 REG 3 12 QR GAT 4 14 QR 13 VEE TEA1118M GAT 4 TEA1118T 11 VEE n.c. 5 12 TX+ n.c. 5 10 TX+ n.c. 6 11 TX− n.c. 6 9 TX− n.c. 7 10 AGC IR 7 8 AGC n.c. 8 9 MBH269 IR MBH268 Fig.3 Pin configuration (TEA1118T). Fig.4 Pin configuration (TEA1118M). handbook, halfpage LN 1 16 VCC 15 GAR handbook, halfpage LN 1 14 VCC SLPE 2 SLPE 2 13 GAR REG 3 REG 3 12 QR 14 QR 13 VEE n.c. 4 TEA1118AM TMUTE 4 TEA1118AT 11 VEE TMUTE 5 12 TX+ DTMF 5 10 TX+ DTMF 6 11 TX− MUTE 6 9 TX− IR 7 8 AGC n.c. 7 MUTE 8 MBH271 9 IR MBH270 Fig.5 Pin configuration (TEA1118AT). 1997 Jul 14 10 AGC Fig.6 Pin configuration (TEA1118AM). 6 Philips Semiconductors Product specification Versatile cordless transmisssion circuit by the formula (see also Figs 8 and 9). RCCint is the internal equivalent resistance of the voltage supply point, and Irec is the current consumed by the output stage of the earpiece amplifier. FUNCTIONAL DESCRIPTION All data given in this chapter are typical values, except when otherwise specified. VCC = VCC0 − RCCint × (IP − Irec) Supplies (pins LN, SLPE, VCC and REG) VCC0 = VLN − RCC × ICC The supply for the TEA1118 and TEA1118A and their peripherals is obtained from the telephone line. The DC line current flowing into the set is determined by the exchange supply voltage (Vexch), the feeding bridge resistance (Rexch), the DC resistance of the telephone line (Rline) and the reference voltage (Vref). With line currents below 7.5 mA, the internal reference voltage (generating Vref) is automatically adjusted to a lower value. This means that more sets can operate in parallel with DC line voltages (excluding the polarity guard) down to an absolute minimum voltage of 1.6 V. At currents below 7.5 mA, the circuit has limited transmit and receive levels. This is called the low voltage area. The ICs generate a stabilized reference voltage (Vref) between pins LN and SLPE. This reference voltage is equal to 3.35 V, is temperature compensated and can be adjusted by means of an external resistor (RVA). It can be increased by connecting the RVA resistor between pins REG and SLPE (see Fig.11), or decreased by connecting the RVA resistor between pins REG and LN. The voltage at pin REG is used by the internal regulator to generate the stabilized reference voltage and is decoupled by a capacitor (CREG) which is connected to VEE. This capacitor, converted into an equivalent inductance (see Section “Set impedance”), realizes the set impedance conversion from its DC value (RSLPE) to its AC value (RCC in the audio-frequency range). The voltage at pin SLPE is proportional to the line current. Figure 7 illustrates the supply configuration. Set impedance In the audio frequency range, the dynamic impedance is mainly determined by the RCC resistor. The equivalent impedance of the circuits is illustrated in Fig.10. Transmit amplifier (pins TX+, TX− and GAT) The ICs regulate the line voltage at pin LN, and it can be calculated as follows: The TEA1118 and TEA1118A have symmetrical transmit inputs. The input impedance between pins TX+ and TX− is equal to 62.5 kΩ; the input impedance between pins TX+/TX− and VEE is equal 36.5 kΩ. The voltage gain from pins TX+/TX− to pin LN is set at 11.3 dB. VLN = Vref + RSLPE × ISLPE ISLPE = Iline − ICC − IP − I* = Ish where: Iline: line current Automatic gain control is provided on this amplifier for line loss compensation. ICC: current consumption of the IC IP: supply current for peripheral circuits The gain of the TEA1118 can be decreased by connecting an external resistor RGAT between pins GAT and REG. The adjustment range is equal to 6 dB. A capacitor CGAT connected between pins GAT and REG can be used to provide a first-order low-pass filter. The cut-off frequency corresponds to the time constant CGAT × (RGATint // RGAT). RGATint is the internal resistor which sets the gain with a typical value of 27 kΩ. I*: current consumed between LN and VEE Ish: the excess line current shunted to SLPE (and VEE) via LN. The preferred value for RSLPE is 20 Ω. Changing RSLPE will affect more than the DC characteristics; it also influences the transmit gain and the DTMF gain (TEA1118A only), the gain control characteristics, the sidetone level and the maximum output swing on the line. Transmit mute (pin TMUTE; TEA1118A only) The transmit amplifier can be disabled by activating the transmit mute function. When TMUTE is LOW, the normal speech mode is entered, depending on the level on MUTE. When TMUTE is HIGH, the transmit amplifier inputs are disabled while the DTMF input is enabled (no confidence tone is provided). The voltage gain between LN and TX+/TX− is attenuated; the gain reduction is 80 dB. The internal circuitry of the TEA1118 and TEA1118A is supplied from pin VCC. This voltage supply is derived from the line voltage by means of a resistor (RCC) and must be decoupled by a capacitor CVCC. It may also be used to supply peripheral circuits such as dialling or control circuits. The VCC voltage depends on the current consumed by the IC and the peripheral circuits as shown 1997 Jul 14 TEA1118; TEA1118A 7 Philips Semiconductors Product specification Versatile cordless transmisssion circuit The CGAR capacitor provides a first-order low-pass filter. The cut-off frequency corresponds to the time constant CGAR × (RGARint // RGAR). RGARint is the internal resistor which sets the gain with a typical value of 100 kΩ. The condition CGARS = 10 × CGAR must be fulfilled to ensure stability. Receive amplifier (pins IR, GAR and QR) The receive amplifier has one input (IR) and one output (QR). The input impedance between pins IR and VEE is 20 kΩ. The voltage gain from pin IR to pin QR is set at 31 dB. The gain can be decreased by connecting an external resistor RGAR between pins GAR and QR; the adjustment range is 12 dB. Two external capacitors CGAR (connected between GAR and QR) and CGARS (connected between GAR and VEE) ensure stability. handbook, full pagewidth TEA1118; TEA1118A Automatic gain control is provided on this amplifier for line loss compensation. Rline RCC 619 Ω Iline TEA1118 TEA1118A LN VCC Ip from preamp ICC Rexch I* Ish CVCC 100 µF peripheral circuits Vexch ISLPE SLPE REG RSLPE CREG 20 Ω 4.7 µF VEE MBH274 Fig.7 Supply configuration. 1997 Jul 14 8 Philips Semiconductors Product specification Versatile cordless transmisssion circuit TEA1118; TEA1118A MBE783 2.5 handbook, halfpage IP (mA) 2 handbook, halfpage 1.5 RCCint VCC 1 VCCO (2) 0.5 Irec PERIPHERAL CIRCUIT IP (1) MBE792 VEE 0 0 1 2 3 VCC (V) 4 (1) With RVA resistor. (2) Without RVA resistor. Fig.8 Typical current IP available from VCC for peripheral circuits at Iline = 15 mA. Fig.9 VCC voltage supply for peripheral. MGD176 6.0 handbook, halfpage Vref (V) handbook, halfpage LN LEQ Vref RP RCC 619 Ω REG VCC 5.0 SLPE RSLPE CREG 20 Ω 4.7 µF VEE 4.0 CVCC 100 µF (1) MBE788 (2) 3.0 104 LEQ = CREG × RSLPE × RP. RP = internal resistance (15.5 kΩ). 106 RVA (Ω) 107 (1) Influence of RVA on Vref. (2) Vref without influence of RVA. Fig.10 Equivalent impedance between LN and VEE. 1997 Jul 14 105 Fig.11 Reference voltage adjustment by RVA. 9 Philips Semiconductors Product specification Versatile cordless transmisssion circuit TEA1118; TEA1118A Automatic Gain Control (pin AGC) Sidetone suppression The TEA1118 and TEA1118A perform automatic line loss compensation. The automatic gain control varies the gain of the transmit amplifier and the gain of the receive amplifier in accordance with the DC line current. The control range is 5.8 dB (which corresponds approximately to a line length of 5 km for a 0.5 mm diameter twisted-pair copper cable with a DC resistance of 176 Ω/km and an average attenuation of 1.2 dB/km). The ICs can be used with different configurations of feeding bridge (supply voltage and bridge resistance) by connecting an external resistor RAGC between pins AGC and VEE. This resistor enables the Istart and Istop line currents to be increased (the ratio between Istart and Istop is not affected by the resistor). The AGC function is disabled when pin AGC is left open-circuit. The TEA1118 and TEA1118A anti-sidetone network comprising RCC//Zline, Rast1, Rast2, Rast3, RSLPE and Zbal (see Fig.12) suppresses the transmitted signal in the earpiece. Maximum compensation is obtained when the following conditions are fulfilled: R SLPE × R ast1 = R CC × ( R ast2 + R ast3 ) [ R ast2 × ( R ast3 + R SLPE ) ] k = ---------------------------------------------------------------------( R ast1 × R SLPE ) Z bal = k × Z line The scale factor k is chosen to meet the compatibility with a standard capacitor from the E6 or E12 range for Zbal. In practice, Zline varies considerably with the line type and the line length. Therefore, the value chosen for Zbal should be for an average line length which gives satisfactory sidetone suppression with short and long lines. The suppression also depends on the accuracy of the match between Zbal and the impedance of the average line. DTMF amplifier (pin DTMF; TEA1118A only) When the DTMF amplifier is enabled, dialling tones may be sent on line. These tones can be heard in the earpiece at a low level (confidence tone). The TEA1118A has an asymmetrical DTMF input. The input impedance between DTMF and VEE is 20 kΩ. The voltage gain from pin DTMF to pin LN is 17.4 dB. The anti-sidetone network for the TEA1118 and TEA1118A (as shown in Fig.16) attenuates the receive signal from the line by 32 dB before it enters the receive amplifier. The attenuation is almost constant over the whole audio frequency range. The automatic gain control has no effect on the DTMF amplifier. Mute function (pin MUTE; TEA1118A only) The mute function performs the switching action between the speech mode and the dialling mode. When MUTE is LOW or open-circuit, the transmit and receive amplifiers inputs are enabled while the DTMF input is disabled, depending on the TMUTE level. When MUTE is HIGH, the DTMF input is enabled and the transmit and receive amplifiers inputs are disabled. A Wheatstone bridge configuration (see Fig.13) may also be used. More information on the balancing of an anti-sidetone bridge can be obtained in our publication “Applications Handbook for Wired Telecom Systems, IC03b”, order number 9397 750 00811. MUTE and TMUTE levels for different modes (TEA1118A only) Table 1 Required MUTE and TMUTE levels to enable the different possible modes CHANNEL MODE DTMF MUTE TMUTE off LOW LOW on HIGH X(1) LOW HIGH CONFIDENCE TONE TRANSMIT RECEIVE Speech on on off DTMF dialling off off on Transmit mute off on on off Note 1. X = don’t care. 1997 Jul 14 10 Philips Semiconductors Product specification Versatile cordless transmisssion circuit TEA1118; TEA1118A LN handbook, full pagewidth Zline RCC Rast1 IR Im VEE Zir Rast2 RSLPE Rast3 SLPE Zbal MBE787 Fig.12 Equivalent circuit of TEA1118 and TEA1118A family anti-sidetone bridge. handbook, full pagewidth LN Zline RCC Zbal IR Im VEE RSLPE Zir Rast1 RA SLPE MBE786 Fig.13 Equivalent circuit of an anti-sidetone network in a Wheatstone bridge configuration. 1997 Jul 14 11 Philips Semiconductors Product specification Versatile cordless transmisssion circuit TEA1118; TEA1118A LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT positive continuous line voltage VEE − 0.4 12 V repetitive line voltage during switch-on or line interruption VEE − 0.4 13.2 V Vn(max) maximum voltage on all pins VEE − 0.4 VCC + 0.4 V Iline line current RSLPE = 20 Ω; see Figs 14 and 15 − 140 mA Ptot total power dissipation Tamb = 75 °C; see Figs 14 and 15 − 384 mW VLN TEA1118T; TEA1118AT − 312 mW Tstg IC storage temperature −40 +125 °C Tamb operating ambient temperature −25 +75 °C TEA1118M; TEA1118AM HANDLING This device meets class 2 ESD test requirements [Human Body Model (HBM)], in accordance with “MIL STD 883C - method 3015”. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS UNIT thermal resistance from junction to ambient in free air TEA1118T; TEA1118AT TEA1118M; TEA1118AM 1997 Jul 14 VALUE mounted on epoxy board 40.1 × 19.1 × 1.5 mm 12 130 K/W 160 K/W Philips Semiconductors Product specification Versatile cordless transmisssion circuit TEA1118; TEA1118A MBH276 MBH275 160 line (mA) 140 150 handbook, halfpage I handbook, halfpage I line (mA) 130 120 110 (1) 90 100 (1) (2) (3) (4) (2) 80 (3) 70 60 (4) 40 50 20 30 2 (1) (2) (3) (4) 4 6 8 2 10 12 V LN V SLPE (V) Tamb = 45 °C; Ptot = 615 mW. Tamb = 55 °C; Ptot = 538 mW. Tamb = 65 °C; Ptot = 461 mW. Tamb = 75 °C; Ptot = 384 mW. (1) (2) (3) (4) Fig.14 SO14 safe operating area. 4 6 8 10 12 V LN V SLPE (V) Tamb = 45 °C; Ptot = 500 mW. Tamb = 55 °C; Ptot = 437 mW. Tamb = 65 °C; Ptot = 375 mW. Tamb = 75 °C; Ptot = 312 mW. Fig.15 SSOP16 safe operating area. CHARACTERISTICS Iline = 15 mA; VEE = 0 V; RSLPE = 20 Ω; AGC pin connected to VEE; Zline = 600 Ω; f = 1 kHz; Tamb = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supplies (pins VLN, VCC, SLPE and REG) Vref stabilized voltage between LN and SLPE VLN DC line voltage Iline = 1 mA 3.1 3.35 3.6 V − 1.6 − V Iline = 4 mA − 2.45 − V Iline = 15 mA 3.35 3.65 3.95 V Iline = 140 mA − − 6.9 V VLN(exR) DC line voltage with an external resistor RVA RVA(SLPE−REG) = 27 kΩ − 4.4 − V ∆VLN(T) DC line voltage variation with temperature referenced to 25 °C Tamb = −25 to +75 °C − ±30 − mV ICC internal current consumption VCC = 2.9 V − 1.15 1.4 mA VCC supply voltage for peripherals IP = 0 mA − 2.9 − V RCCint equivalent supply voltage resistance IP = 0.5 mA − 550 620 Ω 1997 Jul 14 13 Philips Semiconductors Product specification Versatile cordless transmisssion circuit SYMBOL PARAMETER TEA1118; TEA1118A CONDITIONS MIN. TYP. MAX. UNIT Transmit amplifier (pins TX+, TX− and GAT) Zi input impedance differential between pins TX+ and TX− − 62.5 − kΩ single-ended between pins TX+/TX− and VEE − 36.5 − kΩ Gvtx voltage gain from TX+/TX− to LN VTX = 200 mV (RMS) 10.1 11.3 12.5 dB ∆Gvtx(f) gain variation with frequency referred to 1 kHz f = 300 to 3400 Hz − ±0.2 − dB ∆Gvtx(T) gain variation with temperature referred to 25 °C Tamb = −25 to +75 °C − ±0.3 − dB CMRR common mode rejection ratio − 60 − dB ∆Gvtxr gain voltage reduction range (TEA1118 only) external resistor connected between GAT and REG − − 6 dB VLN(max) maximum sending signal (RMS value) Iline = 15 mA; THD = 2% 1.4 1.7 − V Iline = 4 mA; THD = 10% − 0.8 − V VTX(max) maximum transmit input voltage (RMS value) Iline = 15 mA; THD = 2% − 0.45 − V Iline = 75 mA; THD = 2% − 0.9 − V noise output voltage at pin LN; pins TX+/TX− shorted through 200 Ω psophometrically weighted (P53 curve) − −84 − dBmp TMUTE = HIGH − 80 − dB Vnotx Transmit mute (pin TMUTE; TEA1118A only) ∆Gvtxm gain reduction VIL LOW level input voltage VEE − 0.4 − VEE + 0.3 V VIH HIGH level input voltage VEE + 1.5 − VCC + 0.4 V ITMUTE input current − 1.25 3 µA − 20 − kΩ input level = HIGH Receive amplifier (pins IR, QR and GAR) Zi input impedance Gvrx voltage gain from IR to QR VIR = 4 mV (RMS) 29.8 31 32.2 dB ∆Gvrx(f) gain variation with frequency referenced to 1 kHz f = 300 to 3400 Hz − ±0.2 − dB ∆Gvrx(T) gain variation with temperature referenced to 25 °C Tamb = −25 to +75 °C − ±0.3 − dB ∆Gvrxr gain voltage reduction range external resistor connected between GAR and QR − − 12 dB Vo(rms) maximum receive signal (RMS value) IP = 0 mA sine wave drive; RL = 150 Ω; THD = 2% − 0.25 − V IP = 0 mA sine wave drive; RL = 450 Ω; THD = 2% − 0.35 − V Vnorx(rms) noise output voltage at pin QR (RMS value) TEA1118 TEA1118A 1997 Jul 14 IR open-circuit; RL = 150 Ω; psophometrically weighted (P53 curve) 14 − −89 − dBVp − −86 − dBVp Philips Semiconductors Product specification Versatile cordless transmisssion circuit SYMBOL PARAMETER TEA1118; TEA1118A CONDITIONS MIN. TYP. MAX. UNIT Automatic gain control (pin AGC) − 5.8 − dB highest line current for maximum gain − 26 − mA lowest line current for minimum gain − 61 − mA − 20 − kΩ ∆Gvtrx gain control range for transmit and receive amplifiers with respect to Iline = 15 mA Istart Istop Iline = 75 mA; DTMF amplifier (pin DTMF; TEA1118A only) Zi input impedance Gvdtmf voltage gain from DTMF to LN VDTMF = 100 mV (RMS); MUTE or TMUTE = HIGH 16.2 17.4 18.6 dB ∆Gvdtmf(f) gain variation with frequency referenced to 1 kHz f = 300 to 3400 Hz − ±0.2 − dB ∆Gvdtmf(T) gain variation with temperature referenced to 25 °C Tamb = −25 to + 75 °C − ±0.4 − dB Gvct voltage gain from DTMF to QR (confidence tone) VDTMF = 100 mV (RMS); RL = 150 Ω − −18 − dB Mute function (pin MUTE; TEA1118A only) VIL LOW level input voltage VEE − 0.4 − VEE + 0.3 V VIH HIGH level input voltage VEE + 1.5 − VCC + 0.4 V IMUTE input current input level = HIGH − 1.25 3 µA ∆Gtrxm gain reduction for transmit and receive amplifiers MUTE = HIGH − 80 − dB 1997 Jul 14 15 1997 Jul 14 95 V (1) TEA1118 only. (2) TEA1118A only. V 16 BC547 Zbal 390 Ω Rast3 1 nF SLPE TX− GAR TX+ QR IR 470 kΩ Rpd1 RSLPE 20 Ω BZX79C10 100 pF CGARS Rast2 3.92 kΩ CGAR CIR TEA1118 (1) (2) MUTE DTMF TMUTE (2) (2) VCC 4.7 µF AGC VEE CREG REG TEA1118A GAT LN 100 µF CVCC signal from dial and control circuits Rpd2 470 kΩ BF473 supply for peripheral circuits RCC 619 Ω BC558 MBH277 Rpd3 1 MΩ BC547 470 kΩ Rpd4 68 kΩ Rpd6 Rpd5 470 kΩ PD input Versatile cordless transmisssion circuit Fig.16 Typical application of the TEA1118 and TEA1118A in sets with pulse dialling or flash facilities. 3.9 Ω Rlimit BSN254 BZX79C12 4x BAS11 Rast1 130 kΩ ok, full pagewidth b/a telephone line a/b Rprot 10 Ω Philips Semiconductors Product specification TEA1118; TEA1118A APPLICATION INFORMATION Philips Semiconductors Product specification Versatile cordless transmisssion circuit TEA1118; TEA1118A PACKAGE OUTLINES SSOP16: plastic shrink small outline package; 16 leads; body width 4.4 mm D SOT369-1 E A X c y HE v M A Z 9 16 Q A2 A (A 3) A1 pin 1 index θ Lp L 1 8 detail X w M bp e 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (1) e HE L Lp Q v w y Z (1) θ mm 1.5 0.15 0.00 1.4 1.2 0.25 0.32 0.20 0.25 0.13 5.30 5.10 4.5 4.3 0.65 6.6 6.2 1.0 0.75 0.45 0.65 0.45 0.2 0.13 0.1 0.48 0.18 10 0o Note 1. Plastic or metal protrusions of 0.20 mm maximum per side are not included. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 94-04-20 95-02-04 SOT369-1 1997 Jul 14 EUROPEAN PROJECTION 17 o Philips Semiconductors Product specification Versatile cordless transmisssion circuit TEA1118; TEA1118A SO14: plastic small outline package; 14 leads; body width 3.9 mm SOT108-1 D E A X c y HE v M A Z 8 14 Q A2 A (A 3) A1 pin 1 index θ Lp 1 L 7 e 0 detail X w M bp 2.5 5 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (1) e HE L Lp Q v w y Z (1) mm 1.75 0.25 0.10 1.45 1.25 0.25 0.49 0.36 0.25 0.19 8.75 8.55 4.0 3.8 1.27 6.2 5.8 1.05 1.0 0.4 0.7 0.6 0.25 0.25 0.1 0.7 0.3 0.010 0.057 0.004 0.049 0.01 0.019 0.0100 0.35 0.014 0.0075 0.34 0.16 0.15 0.050 0.028 0.024 0.01 0.01 0.004 0.028 0.012 inches 0.069 0.244 0.039 0.041 0.228 0.016 θ Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC SOT108-1 076E06S MS-012AB 1997 Jul 14 EIAJ EUROPEAN PROJECTION ISSUE DATE 95-01-23 97-05-22 18 o 8 0o Philips Semiconductors Product specification Versatile cordless transmisssion circuit TEA1118; TEA1118A SOLDERING SSOP Introduction Wave soldering is not recommended for SSOP packages. This is because of the likelihood of solder bridging due to closely-spaced leads and the possibility of incomplete solder penetration in multi-lead devices. There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. If wave soldering cannot be avoided, the following conditions must be observed: • A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our “IC Package Databook” (order code 9398 652 90011). • The longitudinal axis of the package footprint must be parallel to the solder flow and must incorporate solder thieves at the downstream end. Reflow soldering Even with these conditions, only consider wave soldering SSOP packages that have a body width of 4.4 mm, that is SSOP16 (SOT369-1) or SSOP20 (SOT266-1). Reflow soldering techniques are suitable for all SO and SSOP packages. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. METHOD (SO AND SSOP) During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 °C. Maximum permissible solder temperature is 260 °C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 °C within 6 seconds. Typical dwell time is 4 seconds at 250 °C. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 °C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Wave soldering SO Repairing soldered joints Wave soldering techniques can be used for all SO packages if the following conditions are observed: Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C. • A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. • The longitudinal axis of the package footprint must be parallel to the solder flow. • The package footprint must incorporate solder thieves at the downstream end. 1997 Jul 14 19 Philips Semiconductors Product specification Versatile cordless transmisssion circuit TEA1118; TEA1118A DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Jul 14 20 Philips Semiconductors Product specification Versatile cordless transmisssion circuit NOTES 1997 Jul 14 21 TEA1118; TEA1118A Philips Semiconductors Product specification Versatile cordless transmisssion circuit NOTES 1997 Jul 14 22 TEA1118; TEA1118A Philips Semiconductors Product specification Versatile cordless transmisssion circuit NOTES 1997 Jul 14 23 TEA1118; TEA1118A Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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No. 5, 80640 GÜLTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Internet: http://www.semiconductors.philips.com © Philips Electronics N.V. 1997 SCA55 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 417027/1200/03/pp24 Date of release: 1997 Jul 14 Document order number: 9397 750 02613