INTEGRATED CIRCUITS DATA SHEET TEA1095 Voice switched speakerphone IC Product specification Supersedes data of 1996 Mar 22 File under Integrated Circuits, IC03 1997 Nov 25 Philips Semiconductors Product specification Voice switched speakerphone IC TEA1095 FEATURES APPLICATIONS • External power supply with power-down function • Mains, battery or line-powered telephone sets • Transmit channel with: • Cordless telephones – externally adjustable gain • Answering machines – transmit mute function • Fax machines • Receive channel with: • Hands-free car kits. – externally adjustable gain – logarithmic volume control via a linear potentiometer GENERAL DESCRIPTION – receive mute function The TEA1095 is a bipolar circuit, that in conjunction with a member of the TEA106X, TEA111X families of transmission or TEA1096 transmission/listening-in circuits offers a hands-free function. It incorporates a transmit amplifier, a receiver channel amplifier and a duplex controller with signal and noise monitors on both channels. • Duplex controller consisting of: – signal envelope and noise envelope monitors for both channels with: externally adjustable sensitivity externally adjustable signal envelope time constant externally adjustable noise envelope time constant – decision logic with: externally adjustable switch-over timing externally adjustable idle mode timing externally adjustable dial tone detector in receive channel – voice switch control with: adjustable switching range constant sum of gain during switching constant sum of gain at different volume settings. ORDERING INFORMATION TYPE NUMBER PACKAGE NAME DESCRIPTION VERSION TEA1095 DIP24 plastic dual in-line package; 24 leads (600 mil) SOT101-1 TEA1095T SO24 plastic small outline package; 24 leads; body width 7.5 mm SOT137-1 plastic shrink small outline package; 24 leads; body width 5.3 mm SOT340-1 TEA1095TS 1997 Nov 25 SSOP24 2 Philips Semiconductors Product specification Voice switched speakerphone IC TEA1095 QUICK REFERENCE DATA VBB = 5 V; VGND = 0 V; f = 1 kHz; Tamb = 25 °C; MUTETX = LOW; MUTERX = LOW; PD = LOW; RVOL = 0 Ω; measured in test circuit of Fig.11; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VBB supply voltage 2.9 − 12.0 V IBB current consumption from pin VBB − 2.7 3.8 mA Gvtx voltage gain from TXIN to TXOUT in transmit mode VTXIN = 1 mV (RMS); RGATX = 30.1 kΩ − 15.5 − dB ∆Gvtxr voltage gain adjustment with RGATX −15.5 − +24.5 dB Gvrx voltage gain from RXIN to RXOUT in receive mode VRXIN = 20 mV (RMS); RGARX = 16.5 kΩ − 6.5 − dB ∆Gvrxr voltage gain adjustment with RGARX −20.5 − +19.5 dB SWRA switching range ∆SWRA switching range adjustment Tamb operating ambient temperature 1997 Nov 25 with RSWR referenced to RSWR = 365 kΩ 3 − 40 − dB −40 − +12 dB −25 − +75 °C Philips Semiconductors Product specification Voice switched speakerphone IC TEA1095 BLOCK DIAGRAM handbook, full pagewidth TEA1095 7 V BB 13 PD VBB CTXIN 15 MUTETX 18 TXIN 24 TSEN 6 GATX 17 TXOUT 16 TXGND 14 IDT 12 TRANSMIT CHANNEL V I I V RMIC RTSEN GND DUPLEX CONTROLLER LOG BUFFER 23 to transmission circuit RIDT Vref CTSEN CTENV RGATX CSWT SWT 11 STAB 10 RSTAB SWR 9 RSWR RXIN 2 VOL 8 TENV 13 mV CTNOI 22 TNOI 19 RNOI CRNOI BUFFER LOGIC 20 RENV 13 mV 21 RSEN 4 GARX 5 RXOUT LOG Vdt CRSEN RGARX VOICE SWITCH BUFFER CRENV RRSEN ATTENUATOR BUFFER to loudspeaker amplifier 1 2 V I I V MUTERX RECEIVE CHANNEL VOLUME CONTROL MBG350 Fig.1 Block diagram. 1997 Nov 25 from transmission circuit 4 RVOL Philips Semiconductors Product specification Voice switched speakerphone IC TEA1095 PINNING SYMBOL PIN DESCRIPTION MUTERX 1 receiver channel mute input RXIN 2 receiver amplifier input n.c. 3 not connected GARX 4 receiver gain adjustment RXOUT 5 receiver amplifier output GND 6 ground reference VBB 7 supply voltage input VOL 8 receiver volume adjustment SWR 9 switching range adjustment STAB 10 reference current adjustment SWT 11 switch-over timing adjustment IDT 12 idle mode timing adjustment PD 13 power-down input TXGND 14 ground reference for the transmit channel handbook, halfpage MUTERX 1 24 TSEN RXIN 2 23 TENV n.c. 3 22 TNOI GARX 4 21 RSEN RXOUT 5 20 RENV GND 6 VBB 7 18 TXIN VOL 8 17 GATX 9 16 TXOUT MUTETX 15 transmit channel mute input SWR TXOUT 16 transmit amplifier output STAB 10 GATX 17 transmit gain adjustment SWT 11 TXIN 18 transmit amplifier input RNOI 19 receive noise envelope timing adjustment RENV 20 receive signal envelope timing adjustment RSEN 21 receive signal envelope sensitivity adjustment TNOI 22 transmit noise envelope timing adjustment TENV 23 transmit signal envelope timing adjustment TSEN 24 transmit signal envelope sensitivity adjustment 1997 Nov 25 19 RNOI TEA1095 15 MUTETX 14 TXGND IDT 12 13 PD MBG349 Fig.2 Pin configuration. 5 Philips Semiconductors Product specification Voice switched speakerphone IC TEA1095 lower than 1 and therefore has to be decreased to avoid howling. This is achieved by the duplex controller. The duplex controller of the TEA1095 detects which channel has the ‘largest’ signal and then controls the gains of the transmit amplifier and the receiver amplifier such that the sum of the gains remains constant. As a result, the circuit can be in three stable modes: FUNCTIONAL DESCRIPTION The values given in the functional description are typical values except when otherwise specified. A principle diagram of the TEA1096 is shown on the left side of Fig.3. The TEA1096 is a transmission and listening-in circuit. It incorporates a receiving amplifier for the earpiece, a transmit amplifier for the microphone, a loudspeaker amplifier and a hybrid. For more details on the TEA1096 circuit (please refer to Data Handbook IC03). The right side of Fig.3 shows a principle diagram of the TEA1095, a hands-free add-on circuit with a transmit amplifier, a receiver amplifier and a duplex controller. 1. Transmit mode (Tx mode): the gain of the transmit amplifier is at its maximum and the gain of the receiver amplifier is at its minimum. 2. Receive mode (Rx mode): the gain of the receiver amplifier is at its maximum and the gain of the transmit amplifier is at its minimum. As can be seen from Fig.3, a loop is formed via the sidetone network in the transmission circuit and the acoustic coupling between loudspeaker and microphone of the hands-free circuit. When this loop gain is greater than 1, howling is introduced. In a full duplex application, this would be the case. The loop-gain has to be much 3. Idle mode: the gain of the amplifiers is halfway between their maximum and minimum value. The difference between the maximum gain and minimum gain is called the switching range. handbook, full pagewidth acoustic coupling telephone line HYBRID DUPLEX CONTROL TEA1096 TEA1095 sidetone MBG358 Fig.3 Hands-free telephone set principles. 1997 Nov 25 6 Philips Semiconductors Product specification Voice switched speakerphone IC TEA1095 mode, it is at its minimum and in the idle mode, it is halfway between maximum and minimum. Switch-over from one mode to the other is smooth and click-free. The output capability at pin TXOUT is 20 µA (RMS). Supply: pins VBB, GND and PD The TEA1095 must be supplied with an external stabilized voltage source between pins VBB and GND. In idle mode, without any signal, the internal supply current is 2.7 mA at VBB = 5 V. In the transmit mode, the overall gain of the transmit amplifier (from pin TXIN to TXOUT) can be adjusted from 0 dB to 40 dB to suit application specific requirements. The gain is proportional to the value of RGATX and equals 15.5 dB with RGATX = 30.1 kΩ. To reduce current consumption during pulse dialling or register recall (flash), the TEA1095 is provided with a power-down (PD) input. When the voltage on PD is HIGH, the current consumption from VBB is 140 µA. A capacitor must be connected in parallel with RGATX to ensure stability of the transmit amplifier. Together with RGATX, it also provides a first-order low-pass filter. Transmit channel: pins TXIN, GATX, TXOUT, TXGND and MUTETX By applying a HIGH level on pin MUTETX, the transmit amplifier is muted and the TEA1095 is automatically forced into the receive mode. The TEA1095 has an asymmetrical transmit input (TXIN) with an input resistance of 20 kΩ. The gain of the input stage varies according to the mode of the TEA1095. In the transmit mode, the gain is at its maximum; in the receive handbook, full pagewidth GATX MUTETX VBB RGATX CGATX CTXIN TXIN V I I V TXOUT to transmission circuit RMIC to envelope detector from voice switch to logic TXGND MBG357 Fig.4 Transmit channel. 1997 Nov 25 7 Philips Semiconductors Product specification Voice switched speakerphone IC TEA1095 Receive channel handbook, full pagewidth RGARX to/from voice switch GARX to envelope detector CGARX to loudspeaker amplifier RXOUT V I I V RXIN from transmission circuit MUTERX VOLUME CONTROL VOL RVOL MBG356 Fig.5 Receive channel. RECEIVER AMPLIFIER: PINS RXIN, GARX, RXOUT AND MUTERX VOLUME CONTROL: PIN VOL The receiver amplifier gain can be adjusted with the potentiometer RVOL. A linear potentiometer can be used to obtain logarithmic control of the gain of the receiver amplifier. Each 950 Ω increase of RVOL results in a gain loss of 3 dB. The maximum gain reduction with the volume control is internally limited to the switching range. The TEA1095 has an asymmetrical input (RXIN) for the receiver amplifier with an input resistance of 20 kΩ. The gain of the input stage varies according to the mode of the TEA1095. In the receive mode, the gain is at its maximum; in the transmit mode, it is at its minimum and in the idle mode, it is halfway between maximum and minimum. Switch-over from one mode to the other is smooth and click-free. Duplex controller SIGNAL AND NOISE ENVELOPE DETECTORS: PINS TSEN, TENV, TNOI, RSEN, RENV AND RNOI In the receive mode, the overall gain of the receive amplifier can be adjusted from −14 dB to +26 dB to suit application specific requirements. The gain from RXIN to RXOUT is proportional to the value of RGARX and equals 6.5 dB with RGARX = 16.5 kΩ. A capacitor connected in parallel with RGARX can be used to provide a first-order low-pass filter. The signal envelopes are used to monitor the signal level strength in both channels. The noise envelopes are used to monitor background noise in both channels. The signal and noise envelopes provide inputs for the decision logic. The signal and noise envelopes detectors are shown in Fig.6. By applying a HIGH level on pin MUTERX, the receiver amplifier is muted and the TEA1095 is automatically forced into the transmit mode. 1997 Nov 25 For the transmit channel, the input signal at TXIN is 40 dB amplified to TSEN. For the receive channel, the input signal at RXIN is 0 dB amplified to RSEN. The signals from TSEN and RSEN are logarithmically compressed and buffered to TENV and RENV respectively. The sensitivity of the envelope detectors is set with RTSEN and RRSEN. 8 Philips Semiconductors Product specification Voice switched speakerphone IC TEA1095 The capacitors connected in series with the two resistors block any DC component and form a first order high-pass filter. In the basic application (see Fig.12), it is assumed that VTXIN = 1 mV (RMS) and VRXIN = 100 mV (RMS) nominal and both RTSEN and RRSEN have a value of 10 kΩ. With the value of CTSEN and CRSEN at 100 nF, the cut-off frequency is at 160 Hz. RENV corresponds to a maximum fall-slope of 0.7 dB/ms. This is enough for a smooth envelope and also eliminates the effect of echoes on switching behaviour. To determine the noise level, the signal on TENV and RENV are buffered to TNOI and RNOI. These buffers have a maximum source current of 1 µA and a maximum sink current of 120 µA. Together with the capacitors CTNOI and CRNOI, the timing can be set. In the basic application of Fig.12, the value of both capacitors is 4.7 µF. At room temperature, the 1 µA sourced current corresponds to a maximum rise-slope of the noise envelope of approximately 0.07 dB/ms. This is small enough to track background noise and not to be influenced by speech bursts. The 120 µA current that is sunk corresponds to a maximum fall-slope of approximately 8.5 dB/ms. However, during the decrease of the signal envelope, the noise envelope tracks the signal envelope so it will never fall faster than approximately 0.7 dB/ms. The behaviour of the signal envelope and noise envelope monitors is illustrated in Fig.7. The buffer amplifiers leading the compressed signals to TENV and RENV have a maximum source current of 120 µA and a maximum sink current of 1 µA. Together with the capacitors CTENV and CRENV, the timing of the signal envelope monitors can be set. In the basic application, the value of both capacitors is 470 nF. Because of the logarithmic compression, each 6 dB signal increase means 18 mV increase of the voltage on the envelopes TENV or RENV at room temperature. Thus, timings can be expressed in dB/ms. At room temperature, the 120 µA sourced current corresponds to a maximum rise-slope of the signal envelope of 85 dB/ms. This is enough to track normal speech signals. The 1 µA current sunk by TENV or handbook, full pagewidth DUPLEX CONTROLLER to logic to logic LOG LOG from receiver amplifier from transmit amplifier TSEN TENV TNOI RSEN RTSEN CTSEN RENV RNOI RRSEN CTENV CTNOI CRSEN CRENV CRNOI MBG355 Fig.6 Signal and noise envelope detectors. 1997 Nov 25 9 Philips Semiconductors Product specification Voice switched speakerphone IC TEA1095 4 mV (RMS) handbook, full pagewidth MBG354 1 mV (RMS) INPUT SIGNAL SIGNAL ENVELOPE 36 mV A A B B A: 85 dB/ms B: 0.7 dB/ms NOISE ENVELOPE C B 36 mV B: 0.7 dB/ms C: 0.07 dB/ms B C time Fig.7 Signal and noise envelope waveforms. handbook, full pagewidth IDT DUPLEX CONTROLLER Vref TENV RIDT LOGIC TNOI ATTENUATOR 13 mV SWT CSWT RENV RNOI x x 1 1 − 10 µA x 1 0 x + 10 µA 1 x 0 x + 10 µA x x 1 0 0 0 0 0 x 0 13 mV (note 1) Vdt MUTETX MBG353 (1) When MUTETX = HIGH +10 µA is forced. When MUTERX = HIGH −10 µA is forced. Fig.8 Decision logic. 1997 Nov 25 10 Philips Semiconductors Product specification Voice switched speakerphone IC TEA1095 The switch-over timing can be set with CSWT, the idle mode timing with CSWT and RIDT. In the basic application given in Fig.12, CSWT is chosen at 220 nF and RIDT at 2.2 MΩ. This enables a switch-over time from transmit to receive mode or vice-versa of approximately 13 ms (580 mV swing on SWT). The switch-over time from idle mode to transmit mode or receive mode is approximately 4 ms (180 mV swing on SWT). DECISION LOGIC: PINS IDT AND SWT The TEA1095 selects its mode of operation (transmit, receive or idle mode) by comparing the signal and the noise envelopes of both channels. This is executed by the decision logic. The resulting voltage on pin SWT is the input for the voice-switch. To facilitate the distinction between signal and noise, the signal is considered as speech when its envelope is more than 4.3 dB above the noise envelope. At room temperature, this is equal to a voltage difference VENV−NOI = 13 mV. This so called speech/noise threshold is implemented in both channels. The switch-over time from receive mode or transmit mode to idle mode is equal to 4 × RIDT CSWT and is approximately 2 s (idle mode time). The inputs MUTETX and MUTERX overrule the decision logic. When MUTETX goes HIGH, the capacitor CSWT is charged with 10 µA resulting in the receive mode. When the voltage on pin MUTERX goes HIGH, the capacitor CSWT is discharged with 10 µA resulting in the transmit mode. The signal on TXIN contains both speech and the signal coming from the loudspeaker (acoustic coupling). When receiving, the contribution from the loudspeaker overrules the speech. As a result, the signal envelope on TENV is formed mainly by the loudspeaker signal. To correct this, an attenuator is connected between TENV and the TENV/RENV comparator. Its attenuation equals that applied to the transmit amplifier. VOICE-SWITCH: PINS STAB AND SWR A diagram of the voice-switch is illustrated in Fig.9. With the voltage on SWT, the TEA1095 voice-switch regulates the gains of the transmit and the receive channel such that the sum of both is kept constant. When a dial tone is present on the line, without monitoring, the tone would be recognized as noise because it is a signal with a constant amplitude. This would cause the TEA1095 to go into the idle mode and the user of the set would hear the dial tone fade away. To prevent this, a dial tone detector is incorporated which, in standard application, does not consider the input signals at RXIN as noise when they have a level greater than 42 mV (RMS). This level is proportional to RRSEN. In the transmit mode, the gain of the transmit amplifier is at its maximum and the gain of the receive amplifier is at its minimum. In the receive mode, the opposite applies. In the idle mode, both transmit and receive amplifier gains are halfway. The difference between maximum and minimum is the so called switching range. This range is determined by the ratio of RSWR and RSTAB and is adjustable between 0 and 52 dB. RSTAB should be equal to 3.65 kΩ and sets an internally used reference current. In the basic application diagram given in Fig.12, RSWR is equal to 365 kΩ which results in a switching range of 40 dB. The switch-over behaviour is illustrated in Fig.10. As can be seen from Fig.8, the output of the decision logic is a current source. The logic table gives the relationship between the inputs and the value of the current source. It can charge or discharge the capacitor CSWT with a current of 10 µA (switch-over). If the current is zero, the voltage on SWT becomes equal to the voltage on IDT via the high ohmic resistor RIDT (idling). The resulting voltage difference between SWT and IDT determines the mode of the TEA1095 and can vary between −400 mV and +400 mV. Table 1 In the receive mode, the gain of the receive amplifier can be reduced using the volume control. Since the voice-switch keeps the sum of the gains constant, the gain of the transmit amplifier is increased at the same time (see dashed curves in Fig.10). In the transmit mode however, the volume control has no influence on the gain of the transmit amplifier or the gain of the receive amplifier. Consequently, the switching range is reduced when the volume is reduced. At maximum reduction of volume, the switching range becomes 0 dB. Modes of TEA1095 VSWT − VIDT (mV) MODE <−180 transmit mode 0 idle mode >180 receive mode 1997 Nov 25 11 Philips Semiconductors Product specification Voice switched speakerphone IC TEA1095 handbook, full pagewidth DUPLEX CONTROLLER to transmit amplifier from SWT Gvtx + Gvrx = C VOICE SWITCH from volume control STAB RSTAB SWR RSWR to receive amplifier MBG352 Where C = constant. Fig.9 Voice switch. Tx mode Gvtx, Gvrx (10 dB/div) MBG351 idle mode handbook, halfpage Rx mode RVOL (Ω) Gvtx 5700 3800 1900 0 0 1900 3800 5700 Gvrx −400 −200 0 +200 +400 VSWT − VIDT (mV) Fig.10 Switch-over behaviour. 1997 Nov 25 12 Philips Semiconductors Product specification Voice switched speakerphone IC TEA1095 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Vn(max) maximum voltage on all pins; except pins VBB and RXIN VGND − 0.4 VBB + 0.4 V VRIN(max) maximum voltage on pin RXIN VGND − 1.2 VBB + 0.4 V VBB(max) maximum voltage on pin VBB VGND − 0.4 12.0 V Tstg IC storage temperature −40 +125 °C Tamb operating ambient temperature −25 +75 °C THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER VALUE UNIT 50 K/W TEA1095T 75 K/W TEA1095TS 104 K/W thermal resistance from junction to ambient in free air TEA1095 CHARACTERISTICS VBB = 5 V; VGND = 0 V; f = 1 kHz; Tamb = 25 °C; MUTETX = LOW; MUTERX = LOW; PD = LOW; RVOL = 0 Ω; measured in test circuit of Fig.11; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supply (VBB, PD and GND) VBB supply voltage 2.9 − 12.0 V IBB current consumption from pin VBB − 2.7 3.8 mA 0.3 V POWER-DOWN INPUT PD VIL LOW level input voltage VGND − 0.4 − VIH HIGH level input voltage 1.5 − VBB + 0.4 V IPD power-down input current PD = HIGH − 2.5 5 µA IBB(PD) current consumption from pin VBB in power-down mode PD = HIGH − 140 190 µA Transmit channel (TXIN, GATX, TXOUT, MUTETX and TXGND) TRANSMIT AMPLIFIER Zi input impedance between pins TXIN and TXGND 17 20 23 kΩ Gvtx voltage gain from TXIN to TXOUT VTXIN = 1 mV (RMS); in transmit mode RGATX = 30.1 kΩ − 15.5 − dB ∆Gvtxr voltage gain adjustment with RGATX −15.5 − +24.5 dB ∆GvtxT voltage gain variation with temperature referenced to 25 °C − ±0.3 − dB 1997 Nov 25 VTXIN = 1 mV (RMS); Tamb = −25 to +75 °C 13 Philips Semiconductors Product specification Voice switched speakerphone IC SYMBOL PARAMETER TEA1095 CONDITIONS MIN. TYP. MAX. UNIT ∆Gvtxf voltage gain variation with frequency referenced to 1 kHz VTXIN = 1 mV (RMS); f = 300 to 3400 Hz − ±0.3 − dB Vnotx noise output voltage at pin TXOUT pin TXIN connected to TXGND through 200 Ω in series with 10 µF; psophometrically weighted (P53 curve) − −100 − dBmp TRANSMIT MUTE INPUT MUTETX VIL LOW level input voltage VGND − 0.4 − 0.3 V VIH HIGH level input voltage 1.5 − VBB + 0.4 V IMUTETX input current MUTETX = HIGH − 2.5 5 µA ∆Gvtxm voltage gain reduction with MUTETX active MUTETX = HIGH − 80 − dB 17 20 23 kΩ − 6.5 − dB −20.5 − +19.5 dB Receive channel (RXIN, GARX, RXOUT and MUTERX) RECEIVE AMPLIFIER Zi input impedance between pins RXIN and GND Gvrx voltage gain from RXIN to RXOUT in receive mode ∆Gvrxr voltage gain adjustment with RGARX ∆GvrxT voltage gain variation with temperature referenced to 25 °C VRXIN = 20 mV (RMS); Tamb = −25 to +75 °C − ±0.3 − dB ∆Gvrxf voltage gain variation with frequency referenced to 1 kHz VRXIN = 20 mV (RMS); fi = 300 to 3400 Hz − ±0.3 − dB Vnorx(rms) noise output voltage at pin RXOUT (RMS value) input RXIN short-circuited through 200 Ω in series with 10 µF; psophometrically weighted (P53 curve) − 20 − µV ∆Gvrxv voltage gain variation referenced to ∆RVOL = 950 Ω when total attenuation does not exceed the switching range − 3 − dB 0.3 V VRXIN = 20 mV (RMS); RGARX = 16.5 kΩ RECEIVE MUTE INPUT MUTERX VIL LOW level input voltage VGND − 0.4 − VIH HIGH level input voltage 1.5 − VBB + 0.4 V IMUTERX input current − 2.5 5 µA 1997 Nov 25 MUTERX = HIGH 14 Philips Semiconductors Product specification Voice switched speakerphone IC SYMBOL ∆Gvrxm PARAMETER gain reduction with MUTERX active TEA1095 CONDITIONS MUTERX = HIGH MIN. − TYP. MAX. UNIT 80 − dB Envelope and noise detectors (TSEN, TENV, TNOI, RSEN, RENV and RNOI) PREAMPLIFIERS Gv(TSEN) voltage gain from TXIN to TSEN − 40 − dB Gv(RSEN) voltage gain between RXIN to RSEN − 0 − dB LOGARITHMIC COMPRESSOR AND SENSITIVITY ADJUSTMENT ϕdet(TSEN) sensitivity detection on pin TSEN; voltage change on pin TENV when doubling the current from TSEN ITSEN = 0.8 to 160 µA − 18 − mV ϕdet(RSEN) sensitivity detection on pin RSEN; IRSEN = 0.8 to 160 µA voltage change on pin RENV when doubling the current from RSEN − 18 − mV SIGNAL ENVELOPE DETECTORS Isource(ENV) maximum current sourced from pin TENV or RENV − 120 − µA Isink(ENV) maximum current sunk by pin TENV or RENV 0.75 1 1.25 µA ∆VENV voltage difference between pins RENV and TENV − ±3 − mV when 10 µA is sourced from both RSEN and TSEN; envelope detectors tracking; note 1 NOISE ENVELOPE DETECTORS Isource(NOI) maximum current sourced from pins TNOI or RNOI 0.75 1 1.25 µA Isink(NOI) maximum current sunk by pins TNOI or RNOI − 120 − µA ∆VNOI voltage difference between pins RNOI and TNOI − ±3 − mV − 42 − mV when 2 µA is sourced from both RSEN and TSEN; noise detectors tracking; note 1 DIAL TONE DETECTOR VRINDT(rms) 1997 Nov 25 threshold level at pin RXIN (RMS value) 15 Philips Semiconductors Product specification Voice switched speakerphone IC SYMBOL PARAMETER TEA1095 CONDITIONS MIN. TYP. MAX. UNIT Decision logic (IDT and SWT) SIGNAL RECOGNITION ∆VSrx(th) threshold voltage between pins RENV and RNOI to switch-over from receive to idle mode VRXIN < VRINDT; note 2 − 13 − mV ∆VStx(th) threshold voltage between pins TENV and TNOI to switch-over from transmit to idle mode note 2 − 13 − mV SWITCH-OVER Isource(SWT) current sourced from pin SWT when switching to receive mode 7.5 10 12.5 µA Isink(SWT) current sunk by pin SWT when switching to transmit mode 7.5 10 12.5 µA Iidle(SWT) current sourced from pin SWT in idle mode − 0 − µA − 40 − dB −40 − +12 dB Voice switch (STAB and SWR) SWRA switching range ∆SWRA switching range adjustment ∆Gv voltage gain variation from transmit mode to idle mode on both channels − 20 − dB Gtr gain tracking (Gvtx + Gvrx) during switching, referenced to idle mode − ±0.5 − dB with RSWR referenced to RSWR = 365 kΩ Notes 1. Corresponds to ±1 dB tracking. 2. Corresponds to 4.3 dB noise/speech recognition level. 1997 Nov 25 16 1997 Nov 25 17 RGATX 30.1 kΩ 220 nF CRXIN CGATX GND TXGND RXIN GATX TXOUT 6 14 2 17 16 CTSEN 100 nF CRNOI 4.7 µF CRENV 470 nF CRSEN 100 nF TNOI CTNOI 4.7 µF CTENV 470 nF 22 STAB 10 9 1 MUTERX SWR 365 kΩ RSWR 3.65 kΩ RSTAB TENV 23 SWT 11 CSWT 8 RVOL VOL 5 4 18 13 7 RXOUT GARX TXIN PD VBB CGARX 16.5 kΩ CTXIN 220 nF MBG359 RGARX 5.0 V CVBB 10 µF Voice switched speakerphone IC Fig.11 Test circuit. 10 kΩ TSEN 24 10 kΩ RNOI 19 TEA1095 IDT 12 RTSEN RENV 20 MUTETX RRSEN RSEN 21 15 2.2 MΩ RIDT handbook, full pagewidth 220 nF Philips Semiconductors Product specification TEA1095 TEST AND APPLICATION INFORMATION 1997 Nov 25 18 line 100 µF C1 VEE TEA106X VCC C7 6 14 17 16 2 21 470 nF CRENV RENV 20 1 10 kΩ CTSEN 100 nF 4.7 µF TSEN RTSEN 24 CRNOI RNOI 19 IDT 12 TEA1095 MUTERX 2.2 MΩ RIDT 470 nF CTENV TENV 23 SWT 11 CSWT 220 nF 22 4.7 µF CTNOI TNOI STAB 10 RSTAB 3.65 kΩ 9 8 RXOUT CGARX GARX n.c. VBB TXIN RVOL VOL 5 4 3 7 18 SWR 365 kΩ RSWR LOUDSPEAKER AMPLIFIER CRXOUT 100 nF RGARX 16.5 kΩ 100 nF CTXIN LSP CLSP MBG360 10 µF CVBB +5 V VVBB 2.2 kΩ RTXIN Voice switched speakerphone IC Fig.12 Basic application diagram. 100 nF 10 kΩ CRSEN GND TXGND GATX RGATX TXOUT RXIN R9 20 Ω 30.1 kΩ CGATX 100 nF CRXIN MUTETX 15 RSEN RRSEN 100 nF MIC + C8 100 nF MIC − QR + PD 13 SLPE LN from microcontroller handbook, full pagewidth R1 620 Ω Philips Semiconductors Product specification TEA1095 RDD from microcontroller CVBB 20 Ω 100 µF R1 SLPE MUTET VBB LN CHSMIC 390 Ω S1 S2 R2 S4 + S3 MUTET VDD MICP 15 MUTERX 1 PD CHFTXIN 13 100 nF S3 TXOUT CMICP tip R6 MUTETX 16 7 100 µF VBB HSMIC MICM DP MICROCONTROLLER DTMF DTMF HFTXIN R3 100 nF 100 TXIN nF CMICM TEA1096 TEA1095 C1 QRP R4 CRXIN CTXIN 2 100 nF CQRP 10 µF ring RXIN R7 18 TXGND 14 8 6 5 QLS GND 19 CVDD VOL RVOL Philips Semiconductors RSLPE Voice switched speakerphone IC 1997 Nov 25 470 µF RXOUT 100 nF CRXOUT 100 µF VEE R5 DLL/ DIL LSI CQLS HSQRP 47 µF CDLL S1 S2 470 nF S4 HFQLS interrupter SWITCH MODE MUTET S2 S4 Hands-free OPEN OPEN TXOUT OPEN LOW Handset CLOSED CLOSED HSMIC OPEN DON’T CARE Handset plus listening-in OPEN CLOSED HSMIC CLOSED HIGH Fig.13 Application example. TEA1095 S1 Product specification S3 handbook, full pagewidth MBG361 Philips Semiconductors Product specification Voice switched speakerphone IC TEA1095 PACKAGE OUTLINES seating plane DIP24: plastic dual in-line package; 24 leads (600 mil) SOT101-1 ME D A2 L A A1 c e Z b1 w M (e 1) b MH 13 24 pin 1 index E 1 12 0 5 10 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 min. A2 max. b b1 c D (1) E (1) e e1 L ME MH w Z (1) max. mm 5.1 0.51 4.0 1.7 1.3 0.53 0.38 0.32 0.23 32.0 31.4 14.1 13.7 2.54 15.24 3.9 3.4 15.80 15.24 17.15 15.90 0.25 2.2 inches 0.20 0.020 0.16 0.066 0.051 0.021 0.015 0.013 0.009 1.26 1.24 0.56 0.54 0.10 0.60 0.15 0.13 0.62 0.60 0.68 0.63 0.01 0.087 Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC SOT101-1 051G02 MO-015AD 1997 Nov 25 EIAJ EUROPEAN PROJECTION ISSUE DATE 92-11-17 95-01-23 20 Philips Semiconductors Product specification Voice switched speakerphone IC TEA1095 SO24: plastic small outline package; 24 leads; body width 7.5 mm SOT137-1 D E A X c HE y v M A Z 13 24 Q A2 A (A 3) A1 pin 1 index θ Lp L 1 12 e detail X w M bp 0 5 10 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (1) e HE L Lp Q v w y mm 2.65 0.30 0.10 2.45 2.25 0.25 0.49 0.36 0.32 0.23 15.6 15.2 7.6 7.4 1.27 10.65 10.00 1.4 1.1 0.4 1.1 1.0 0.25 0.25 0.1 0.9 0.4 inches 0.10 0.012 0.096 0.004 0.089 0.01 0.019 0.013 0.014 0.009 0.61 0.60 0.30 0.29 0.050 0.419 0.043 0.055 0.394 0.016 0.043 0.039 0.01 0.01 0.004 0.035 0.016 Z (1) θ 8o 0o Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC SOT137-1 075E05 MS-013AD 1997 Nov 25 EIAJ EUROPEAN PROJECTION ISSUE DATE 95-01-24 97-05-22 21 Philips Semiconductors Product specification Voice switched speakerphone IC TEA1095 SSOP24: plastic shrink small outline package; 24 leads; body width 5.3 mm D SOT340-1 E A X c HE y v M A Z 24 13 Q A2 A (A 3) A1 pin 1 index θ Lp L 1 12 bp e detail X w M 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (1) e HE L Lp Q v w y Z (1) θ mm 2.0 0.21 0.05 1.80 1.65 0.25 0.38 0.25 0.20 0.09 8.4 8.0 5.4 5.2 0.65 7.9 7.6 1.25 1.03 0.63 0.9 0.7 0.2 0.13 0.1 0.8 0.4 8 0o Note 1. Plastic or metal protrusions of 0.20 mm maximum per side are not included. OUTLINE VERSION SOT340-1 1997 Nov 25 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 93-09-08 95-02-04 MO-150AG 22 o Philips Semiconductors Product specification Voice switched speakerphone IC TEA1095 method. Typical reflow temperatures range from 215 to 250 °C. SOLDERING Introduction Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 °C. There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. WAVE SOLDERING Wave soldering is not recommended for SSOP packages. This is because of the likelihood of solder bridging due to closely-spaced leads and the possibility of incomplete solder penetration in multi-lead devices. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our “IC Package Databook” (order code 9398 652 90011). If wave soldering cannot be avoided, the following conditions must be observed: • A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. DIP SOLDERING BY DIPPING OR BY WAVE The maximum permissible temperature of the solder is 260 °C; solder at this temperature must not be in contact with the joint for more than 5 seconds. The total contact time of successive solder waves must not exceed 5 seconds. • The longitudinal axis of the package footprint must be parallel to the solder flow and must incorporate solder thieves at the downstream end. Even with these conditions, only consider wave soldering SSOP packages that have a body width of 4.4 mm, that is SSOP16 (SOT369-1) or SSOP20 (SOT266-1). The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (Tstg max). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. REPAIRING SOLDERED JOINTS Apply a low voltage soldering iron (less than 24 V) to the lead(s) of the package, below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 °C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 °C, contact may be up to 5 seconds. Maximum permissible solder temperature is 260 °C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 °C within 6 seconds. Typical dwell time is 4 seconds at 250 °C. SO and SSOP REPAIRING SOLDERED JOINTS REFLOW SOLDERING Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Reflow soldering techniques are suitable for all SO and SSOP packages. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating 1997 Nov 25 23 Philips Semiconductors Product specification Voice switched speakerphone IC TEA1095 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Nov 25 24 Philips Semiconductors Product specification Voice switched speakerphone IC TEA1095 NOTES 1997 Nov 25 25 Philips Semiconductors Product specification Voice switched speakerphone IC TEA1095 NOTES 1997 Nov 25 26 Philips Semiconductors Product specification Voice switched speakerphone IC TEA1095 NOTES 1997 Nov 25 27 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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No. 5, 80640 GÜLTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Internet: http://www.semiconductors.philips.com © Philips Electronics N.V. 1997 SCA56 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 417027/1200/03/pp28 Date of release: 1997 Nov 25 Document order number: 9397 750 03122