INTEGRATED CIRCUITS DATA SHEET TEA1067 Low voltage versatile telephone transmission circuit with dialler interface Product specification File under Integrated Circuits, IC03A June 1990 Philips Semiconductors Product specification Low voltage versatile telephone transmission circuit with dialler interface TEA1067 • Asymmetrical high-impedance input (32 kΩ) for electret microphone GENERAL DESCRIPTION The TEA1067 is a bipolar integrated circuit performing all speech and line interface functions required in fully electronic telephone sets. It performs electronic switching between dialling and speech. The circuit is able to operate down to a DC line voltage of 1.6 V (with reduced performance) to facilitate the use of more telephone sets in parallel. • DTMF signal input with confidence tone • Mute input for pulse or DTMF dialling • Power down input for pulse dial or register recall • Receiving amplifier for magnetic, dynamic or piezoelectric earpieces Features • Large gain setting range on microphone and earpiece amplifiers • Low DC line voltage; operates down to 1.6 V (excluding polarity guard) • Line current dependent line loss compensation facility for microphone and earpiece amplifiers • Voltage regulator with adjustable static resistance • Gain control adaptable to exchange supply • DC line voltage adjustment capability • Provides supply with limited current for external circuitry • Symmetrical high-impedance inputs (64 kΩ) for dynamic, magnetic or piezoelectric microphones QUICK REFERENCE DATA PARAMETER CONDITIONS Line voltage Iline = 15 mA Line current operating range normal operation SYMBOL MIN. TYP. MAX. UNIT VLN 3.65 3.9 4.15 V TEA1067 Iline 11 − 140 mA TEA1067T Iline 11 − 140 mA with reduced performance Iline 1 − 11 mA input LOW ICC − 1 1.35 mA input HIGH ICC − 55 82 µA VCC 2.2 2.4 − V VCC 2.5 − − V microphone amplifier Gv 44 − 52 dB receiving amplifier Gv 20 − 45 dB ∆Gv 5.5 5.9 6.3 dB Vexch 36 − 60 V Rexch 0.4 − 1 kΩ Internal supply current Supply voltage for peripherals power down Iline = 15 mA; Ip = 1.4 mA; mute input HIGH Iline = 15 mA; Ip = 0.9 mA; mute input HIGH Voltage gain range Line loss compensation gain control range Exchange supply voltage range Exchange feeding bridge resistance range PACKAGE OUTLINES TEA1067: 18-lead DIL; plastic (SOT102). SOT102-1; 1998 Jun 18. TEA1067T: 20-lead mini-pack; plastic (SO20; SOT163A). SOT163-1; 1998 Jun 18. June 1990 2 Philips Semiconductors Product specification Low voltage versatile telephone transmission circuit with dialler interface TEA1067 VCC handbook, full pagewidth LN 15 (17) IR (1)1 (6) 6 11 (12) − TEA1067 TEA1067T MIC+ MIC− DTMF MUTE PD 8 (9) + 7 (7) − + + + − − dB(1) dB (5) 5 − (4) 4 (2) 2 QR+ QR− GAS1 − + + 13 (15) + GAR (3) 3 − GAS2 14 (16) 12 (14) SUPPLY AND REFERENCE LOW VOLTAGE CIRCUIT AGC CIRCUIT CURRENT REFERENCE 10 (11) VEE 16 (18) REG 17 (19) AGC 9 (10) STAB Figures in parenthesis refer to TEA1067T. Fig.1 Block diagram. June 1990 3 (20)18 SLPE MGR082 Philips Semiconductors Product specification Low voltage versatile telephone transmission circuit with dialler interface TEA1067 PINNING handbook, halfpage LN 1 18 SLPE GAS1 2 17 AGC 1 LN positive line terminal 2 GAS1 gain adjustment; transmitting amplifier 3 GAS2 gain adjustment; transmitting amplifier 4 QR− inverting output; receiving amplifier 5 QR+ non-inverting output receiving amplifier 6 GAR gain adjustment; receiving amplifier 7 MIC− inverting microphone input 8 MIC+ non-inverting microphone input 9 STAB current stabilizer GAS2 3 16 REG QR− 4 15 VCC QR+ 5 GAR 6 13 DTMF 10 VEE negative line terminal MIC− 7 12 PD 11 IR receiving amplifier input MIC+ 8 11 IR 12 PD power-down input 13 DTMF dual-tone multi-frequency input 14 MUTE mute input 15 VCC positive supply decoupling 16 REG voltage regulator decoupling 17 AGC automatic gain control input 18 SLPE slope (DC resistance) adjustment STAB TEA1067 14 MUTE 10 VEE 9 MGR084 Fig.2 Pinning diagram for TEA1067 18-lead DIL version. 1 LN positive line terminal 2 GAS1 gain adjustment; transmitting amplifier 3 GAS2 gain adjustment; transmitting amplifier 20 SLPE 4 QR− inverting output; receiving amplifier GAS1 2 19 AGC 5 QR+ non-inverting output receiving amplifier GAS2 3 18 REG 6 GAR gain adjustment, receiving amplifier 7 MIC− inverting microphone input handbook, halfpage LN 1 QR− 4 17 VCC 8 n.c. not connected QR+ 5 16 MUTE 9 MIC+ non-inverting microphone input GAR 6 15 DTMF 10 STAB current stabilizer MIC− 7 14 PD 11 VEE negative line terminal n.c. 8 13 n.c. 12 IR receiving amplifier input MIC+ 9 12 IR 13 n.c. not connected STAB 10 11 VEE 14 PD power-down input 15 DTMF dual-tone multi-frequency input 16 MUTE mute input 17 VCC positive supply decoupling 18 REG voltage regulator decoupling 19 AGC automatic gain control input 20 SLPE slope (DC resistance) adjustment TEA1067T MGR083 Fig.3 June 1990 Pinning diagram for TEA1067T 20-lead mini-pack version. 4 Philips Semiconductors Product specification Low voltage versatile telephone transmission circuit with dialler interface In normal use the value of R9 would be 20 Ω. Changing the value of R9 will also affect microphone gain, DTMF gain, gain control characteristics, side-tone level and maximum output swing on LN, and the DC characteristics (especially at the lower voltages). FUNCTIONAL DESCRIPTION Supply: VCC, LN, SLPE, REG and STAB Power for the TEA1067 and its peripheral circuits is usually obtained from the telephone line. The IC develops its own supply at VCC and regulates its voltage drop. The supply voltage VCC may also be used to supply external circuits e.g. dialling and control circuits. Under normal conditions, when ISLPE >> ICC + 0.5 mA + Ip, the static behaviour of the circuit is that of a 3.6 V regulator diode with an internal resistance equal to that of R9. In the audio frequency range the dynamic impedance is largely determined by R1. Fig.4 shows the equivalent impedance of the circuit. Decoupling of the supply voltage is performed by a capacitor between VCC and VEE while the internal voltage regulator is decoupled by a capacitor between REG and VEE. At line currents below 9 mA the internal reference voltage is automatically adjusted to a lower value (typically 1.6 V at 1 mA). This means that the operation of more sets in parallel is possible with DC line voltages (excluding the polarity guard) down to an absolute minimum voltage of 1.6 V. With line currents below 9 mA the circuit has limited sending and receiving levels. The internal reference voltage can be adjusted by means of an external resistor (RVA). This resistor connected between LN and REG will decrease the internal reference voltage, connected between REG and SLPE it will increase the internal reference voltage. The DC current drawn by the device will vary in accordance with varying values of the exchange voltage (Vexch), the feeding bridge resistance (Rexch), and the DC resistance of the telephone line (Rline). The TEA1067 has an internal current stabilizer working at a level determined by a 3.6 kΩ resistor connected between STAB and VEE (see Fig.7). When the line current (Iline) is more than 0.5 mA greater than the sum of the IC supply current (ICC) and the current drawn by the peripheral circuitry connected to VCC (Ip) the excess current is shunted to VEE via LN. The regulated voltage on the line terminal (VLN) can be calculated as: Current (Ip) available from VCC for peripheral circuits depends on the external components used. Fig.10 shows this current for VCC > 2.2 V. If MUTE is LOW when the receiving amplifier is driven the available current is further reduced. Current availability can be increased by connecting the supply IC (TEA1081) in parallel with R1, as shown in Fig.17 (c), or by increasing the DC line voltage by means of an external resistor (RVA) connected between REG and SLPE. VLN = Vref + ISLPE × R9; or VLN = Vref + [(Iline − ICC − 0.5 × 10−3 A) − Ip] × R9 Where Vref is an internally generated temperature compensated reference voltage of 3.6 V and R9 is an external resistor connected between SLPE and VEE. June 1990 TEA1067 5 Philips Semiconductors Product specification Low voltage versatile telephone transmission circuit with dialler interface TEA1067 Dual-tone multi-frequency input (DTMF) LN handbook, halfpage Leq Rp R1 Vref REG VCC R9 20 Ω VEE C3 4.7 µF When the DTMF input is enabled dialling tones may be sent onto the line. The voltage gain from DTMF to LN is typically 25.5 dB (when R7 = 68 kΩ) and varies with R7 in the same way as the microphone gain. The signalling tones can be heard in the earpiece at a low level (confidence tone). C1 100 µF Receiving Amplifier (IR, QR+, QR− and GAR) MBA454 The receiving amplifier has one input (IR), one non-inverting complementary output (QR+) and an inverting complementary output (QR−). These outputs may be used for single-ended or differential drive depending on the sensitivity and type of earpiece used (see Fig.12). IR to QR + gain is typically 31 dB (when R4 = 100 kΩ), this is sufficient for low-impedance magnetic or dynamic microphones which are suited for single-ended drive. Using both outputs for differential drive gives an additional gain of 6 dB. This feature can be used when the earpiece impedance exceeds 450 Ω (high-impedance dynamic or piezoelectric types). Rp = 16.2 kΩ Leq = C3 × R9 × Rp Fig.4 Equivalent impedance circuit. Microphone inputs (MIC+ and MIC−) and gain adjustment pins (GAS1 and GAS2) The TEA1067 has symmetrical microphone inputs. Its input impedance is 64 kΩ (2 × 32 kΩ) and its voltage gain is typically 52 dB (when R7 = 68 kΩ, see Fig.14). Dynamic, magnetic, piezoelectric or electret (with built-in FET source followers) microphones can be used. Microphone arrangements are shown in Fig.11. The receiving amplifier gain can be adjusted between 20 and 39 dB with single-ended drive and between 26 and 45 dB with differential drive, to match the sensitivity of the transducer in use. The gain is set with the value of R4 which is connected between GAR and QR+. Overall receive gain between LN and QR+ is calculated by substracting the anti-sidetone network attenuation (32 dB) from the amplifier gain. Two external capacitors C4 and C7, ensure stability. C4 is normally 100 pF and C7 is 10 × the value of C4. The value of C4 may be increased to obtain a first-order low-pass filter. The cut-off frequency will depend on the time constant R4 × C4. The output voltage of the receiving amplifier is specified for continuous-wave drive. The maximum output voltage will be higher under speech conditions where the peak to RMS ratio is higher. The gain of the microphone amplifier can be adjusted between 44 dB and 52 dB to suit the sensitivity of the transducer in use. The gain is proportional to the value of R7 which is connected between GAS1 and GAS2. Stability is ensured by the external capacitor C6 which is connected between GAS1 and SLPE. The value of C6 is 100 pF but this may be increased to obtain a first-order low-pass filter. The cut-off frequency corresponds to the time constant R7 × C6. Mute input (MUTE) When MUTE is HIGH the DTMF input is enabled and the microphone and receiving amplifier inputs are inhibited. The reverse is true when MUTE is LOW or open-circuit. MUTE switching causes only negligible clicking on the earpiece outputs and line. If the number of parallel sets in use causes a drop in line current to below 6 mA the speech amplifiers remain active independent to the DC level applied to the MUTE input. June 1990 6 Philips Semiconductors Product specification Low voltage versatile telephone transmission circuit with dialler interface Side-tone suppression Automatic gain control input (AGC) The anti-sidetone network, R1//Zline, R2, R3, R9 and Zbal, (see Fig.5) suppresses transmitted signal in the earpiece. Compensation is maximum when the following conditions are fulfilled: Automatic line loss compensation is achieved by connecting a resistor (R6) between AGC and VEE. The automatic gain control varies the gain of the microphone amplifier and the receiving amplifier in accordance with the DC line current. The control range is 5.9 dB. This corresponds to a line length of 5 km for a 0.5 mm diameter copper twisted-pair cable with a DC resistance of 176 Ω/km and an average attenuation 1.2 dB/km. Resistor R6 should be chosen in accordance with the exchange supply voltage and its feeding bridge resistance (see Fig.13 and Table 1). The ratio of start and stop currents of the AGC curve is independent of the value of R6. If no automatic line loss compensation is required the AGC may be left open-circuit. The amplifiers, in this condition, will give their maximum specified gain. (a) R9 × R2 = R1 (R3 + [R8//Zbal]); (b) (Zbal / [Zbal + R8]) = (Zline / [Zline + R1]) If fixed values are chosen for R1, R2, R3, and R9 then condition (a) will always be fulfilled when R8//Zbal << R3. To obtain optimum side-tone suppression condition (b) has to be fulfilled resulting in: Zbal = (R8/R1) Zline = k.Zline where k is a scale factor; k = (R8/R1) The scale factor (k), dependent on the value of R8, is chosen to meet the following criteria: Power-down input (PD) (a) Compatibility with a standard capacitor from the E6 or E12 range for Zbal During pulse dialling or register recall (timed loop break) the telephone line is interrupted. During these interruptions the telephone line provides no power for the transmission circuit or circuits supplied by VCC. The charge held on C1 will bridge these gaps. This bridging is made easier by a HIGH level on the PD input which reduces the typical supply current from 1 mA to 55 µA and switches off the voltage regulator preventing discharge through LN. When PD is HIGH the capacitor at REG is disconnected with the effect that the voltage stabilizer will have no switch-on delay after line interruptions. This minimizes the contribution of the IC to the current waveform during pulse dialling or register recall. When this facility is not required PD may be left open-circuit. June 1990 TEA1067 (b) Zbal//R8 << R3 to fulfil condition (a) and thus ensuring correct anti-sidetone bridge operation (c) Zbal + R8 >> R9 to avoid influencing the transmitter gain In practice Zline varies considerably with the line type and length. The value chosen for Zbal should therefore be for an average line length thus giving optimum setting for short or long lines. 7 Philips Semiconductors Product specification Low voltage versatile telephone transmission circuit with dialler interface TEA1067 The anti-sidetone network for the TEA1060 family shown in Fig.5 attenuates the signal received from the line by 32 dB before it enters the receiving amplifier. The attenuation is almost constant over the whole audio frequency range. Fig.6 shows a conventional Wheatstone bridge anti-sidetone circuit that can be used as an alternative. Both bridge types can be used with either resistive or complex set impedances. Example The line balance impedance (Zbal) at which the optimum suppression is present can be calculated by: suppose Zline = 210 Ω + (1265 Ω//140 nF), representing a 5 km line of 0.5 mm diameter, copper, twisted-pair cable matched to 600 Ω (176 Ω/km; 38 nF/km). When k = 0.64 then R8 = 390 Ω; Zbal = 130 Ω + (820 Ω//220 nF). LN handbook, full pagewidth Zline R1 R2 IR im VEE Rt R3 R9 R8 Zbal SLPE MSA500 Fig.5 Equivalent circuit of TEA1060 anti-sidetone bridge. LN handbook, full pagewidth Zline R1 Zbal IR im VEE Rt R9 R8 RA SLPE MSA501 Fig.6 Equivalent circuit of an anti-sidetone network in a Wheatstone bridge configuration. More information can be found in the designer guide; 9398 341 10011 June 1990 8 Philips Semiconductors Product specification Low voltage versatile telephone transmission circuit with dialler interface TEA1067 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) PARAMETER CONDITIONS SYMBOL MIN. MAX. UNIT VLN − 12 V VLN − 13.2 V (Fig.16) VLN − 28 V Line current TEA1067 (note 1) R9 = 20 Ω Iline − 140 mA Line current TEA1067T (note 1) R9 = 20 Ω Iline − 140 mA Vi − VCC + 0.7 V −Vi − 0.7 V Ptot − 769 mW Positive continuous line voltage Repetitive line voltage during switch-on line interruption Repetitive peak line voltage for a 1 ms pulse per 5 s R9 = 20 Ω; R10 = 13 Ω Voltage on all other pins Total power dissipation (note 2) R9 = 20 Ω TEA1067 Ptot − 550 mW Storage temperature range Tstg −40 + 125 °C Operating ambient temperature range Tamb −25 + 75 °C Junction temperature Tj − + 125 °C TEA1067T Notes 1. Mostly dependent on the maximum required Tamb and on the voltage between LN and SLPE. See Figs 7 and 8 to determine the current as a function of the required voltage and the temperature. 2. Calculated for the maximum ambient temperature specified Tamb = 75 °C and a maximum junction temperature of 125 °C. THERMAL RESISTANCE From junction to ambient in free air TEA1067 Rth j-a typ. 65 K/W TEA1067T mounted on glass epoxy board 41 × 19 × 1.5 mm Rth j-a typ. 90 K/W June 1990 9 Philips Semiconductors Product specification Low voltage versatile telephone transmission circuit with dialler interface TEA1067 MBH133 160 LN (mA) 140 handbook, halfpage I (1) 120 (2) 100 (3) 80 (4) 60 40 2 4 6 8 10 12 VLN-VSLPE (V) Tamb Ptot (1) 45 °C 1231 mW (2) 55 °C 1077 mW (3) 65 °C 923 mW (4) 75 °C 769 mW Fig.7 TEA1067 safe operating area. MSA546 150 LN (mA) 130 handbook, halfpage I 110 90 (1) (2) 70 (3) (4) 50 Tamb 30 2 4 6 8 10 12 VLN-VSLPE (V) Fig.8 TEA1067T safe operating area. June 1990 10 Ptot (1) 45 °C 888 mW (2) 55 °C 777 mW (3) 65 °C 666 mW (4) 75 °C 555 mW Philips Semiconductors Product specification Low voltage versatile telephone transmission circuit with dialler interface TEA1067 CHARACTERISTICS Iline = 11 to 140 mA; VEE = 0 V; f = 800 Hz; Tamb = 25 °C; unless otherwise specified PARAMETER CONDITION SYMBOL MIN. TYP. MAX. UNIT Supply; LN and VCC Voltage drop over circuit, between LN and VEE Variation with temperature microphone inputs open Iline = 1 mA VLN − 1.6 − V Iline = 4 mA VLN 1.75 2.0 2.25 V Iline = 7 mA VLN 2.25 2.8 3.35 V Iline = 11 mA VLN 3.55 3.8 4.05 V Iline = 15 mA VLN 3.65 3.9 4.15 V Iline = 100 mA VLN 4.9 5.6 6.5 V Iline = 140 mA VLN − − 7.5 V Iline = 15 mA ∆VLN/∆T −3 −1 1 mV/K 3.1 3.4 3.7 V 4.2 4.5 4.8 V ICC − 1.0 1.35 mA ICC − 55 82 µA Ip = 1.4 mA VCC 2.2 2.4 − V Ip = 0 mA VCC 2.95 3.2 − V Zi 51 64 77 kΩ Zi 25.5 32 38.5 kΩ kCMR − 82 − dB Gv 51 52 53 dB Voltage drop over circuit, between LN and VEE with external resistor RVA Iline = 15 mA; RVA (LN to REG) = 68 kΩ Iline = 15 mA; RVA (REG to SLPE) = 39 kΩ Supply current PD = LOW; VCC = 2.8 V Supply current PD = HIGH; VCC = 2.8 V Supply voltage available for peripheral circuitry Iline = 15 mA; MUTE = HIGH Microphone inputs MIC+ and MIC− Input impedance (differential) between MIC− and MIC+ Input impedance (single-ended) MIC− or MIC+ to VEE Common mode rejection ratio Voltage gain MIC+/MIC− to LN Iline = 15 mA; R7 = 68 kΩ June 1990 11 Philips Semiconductors Product specification Low voltage versatile telephone transmission circuit with dialler interface PARAMETER CONDITION TEA1067 SYMBOL MIN. TYP. MAX. UNIT Gain variation with frequency at f = 300 Hz and f = 3400 Hz ∆Gvf −0.5 ± 0.2 +0.5 dB ∆GvT − ± 0.2 − dB Zi 16.8 20.7 24.6 kΩ R7 = 68 kΩ Gv 24.5 25.5 26.5 dB w.r.t. 800 Hz ∆Gvf −0.5 ±0.2 +0.5 dB ∆GvT − ±0.2 − dB ∆Gv −8 − 0 dB THD = 2% VLN(rms) − 1.9 − V THD = 10% VLN(rms) 1.9 2.2 − V VLN(rms) − 0.8 − V VLN(rms) − 1.4 − V Vno(rms) − −72 − dBmp Zi 17 21 25 kΩ w.r.t 800 Hz Gain variation with temperature at −25 °C and + 75 °C w.r.t. 25 °C without R6; Iline = 50 mA Dual-tone multi-frequency input DTMF Input impedance Voltage gain from DTMF to LN Iline = 15 mA; Gain variation with frequency at f = 300 Hz and f = 3400 Hz Gain variation with temperature at −25 °C and +75 °C w.r.t. 25 °C Iline = 50 mA Gain adjustment GAS1 and GAS2 Gain variation of the transmitting amplifier by varying R7 between GAS1 and GAS2 Sending amplifier output LN Output voltage Iline = 15 mA Iline = 4 mA; THD = 10% Iline = 7 mA; THD = 10% Noise output voltage Iline = 15 mA; R7 = 68 kΩ; 200 Ω between MIC− and MIC+; psophometrically weighted (P53 curve) Receiving amplifier input IR Input impedance June 1990 12 Philips Semiconductors Product specification Low voltage versatile telephone transmission circuit with dialler interface PARAMETER CONDITION TEA1067 SYMBOL MIN. TYP. MAX. UNIT Receiving amplifier outputs QR+ and QR− Output impedance Zo − 4 − Ω Gv 30 31 32 dB QR−) = 600 Ω Gv 36 37 38 dB w.r.t. 800 Hz ∆Gvf −0.5 −0.2 0 dB ∆GvT − ±0.2 − dB RL = 150 Ω Vo(rms) 0.25 0.29 − V RL = 450 Ω Vo(rms) 0.45 0.55 − V Vo(rms) 0.65 0.80 − V Iline = 4 mA Vo(rms) − 15 − mV Iline = 7 mA Vo(rms) − 130 − mV (single-ended) Voltage gain from IR to QR+ or QR− Iline = 15 mA R4 = 100 kΩ single-ended RL (from QR+ or QR−) = 300 Ω differential RL (from QR+ or Gain variation with frequency at f = 300 Hz and f = 3400 Hz Gain variation with temperature at −25 °C and +75 °C w.r.t. 25 °C without R6; Iline = 50 mA Output voltage sinewave drive Iline = 15 mA; Ip = 0 mA; THD = 2% R4 = 100 kΩ single-ended differential f = 3400 Hz; series R = 100 Ω; CL = 47 nF Output voltage THD = 10%; RL = 150 Ω R4 = 100 kΩ Noise output voltage Iline = 15 mA; R4 = 100 kΩ; IR open-circuit psophometrically weighted; (P53 curve) single-ended RL = 300 Ω Vno(rms) − 50 − µV differential RL = 600 Ω Vno(rms) − 100 − µV June 1990 13 Philips Semiconductors Product specification Low voltage versatile telephone transmission circuit with dialler interface PARAMETER CONDITION TEA1067 SYMBOL MIN. TYP. MAX. UNIT Gain adjustment GAR Gain variation of receiving amplifier achievable by varying R4 between ∆Gv −11 − +8 dB Input voltage HIGH VIH 1.5 − VCC V Input voltage LOW VIL − − 0.3 V Input current IMUTE − 8 15 µA ∆Gv − 70 − dB Gv −21 −19 −17 dB GAR and QR Mute input Gain reduction MIC+ or MIC− to LN MUTE = HIGH Voltage gain from DTMF to QR+ or QR− MUTE = HIGH; R4 = 100 kΩ; single-ended; RL = 300 Ω Power-down input PD Input voltage HIGH VIH 1.5 − VCC V Input voltage LOW VIL − − 0.3 V Input current IPD − 5 10 µA ∆Gv −5.5 −5.9 −6.3 dB Iline − 23 − mA Iline − 61 − mA ∆Gv −1.0 −1.5 −2.0 dB Automatic gain control input AGC Controlling the gain from IR to QR+/QR− and the gain from MIC+/MIC− to LN; R6 between AGC and VEE Gain control range R6 = 110 kΩ Iline = 70 mA Highest line current for maximum gain Minimum line current for minimum gain Reduction of gain between Iline = 15 mA and Iline = 35 mA June 1990 14 Philips Semiconductors Product specification Low voltage versatile telephone transmission circuit with dialler interface Rline handbook, full pagewidth Iline TEA1067 R1 ISLPE + 0.5 mA ICC Ip LN TEA1067 Rexch VCC 0.5 mA DC C1 AC Vexch REG STAB SLPE peripheral circuits VEE ISLPE C3 R5 R9 MBH123 Fig.9 Supply arrangement. MGR085 handbook, halfpage 2 a IP (mA) b 1 0 0 1 2 Curve (a) is valid when the receiving amplifier is not driven or when MUTE = HIGH, curve (b) is valid when MUTE = LOW and the receiving amplifier is driven; Vo(rms) = 150 mV, RL = 150 Ω asymmetrical. The supply possibilities can be increased simply by setting the voltage drop over the circuit VLN to a higher value by means of resistor RVA connected between REG and SLPE. 3 VCC (V) 4 (a) Ip = 1.8 mA (b) Ip = 1.35 mA Iline = 15 mA at VLN = 3.9 V R1 = 620 Ω and R9 = 20 Ω. Fig.10 Typical current Ip available from VCC for peripheral circuitry with VCC ≥ 2.2 V. June 1990 15 Philips Semiconductors Product specification Low voltage versatile telephone transmission circuit with dialler interface TEA1067 handbook, full pagewidth MIC+ MIC− MIC− MIC+ VCC MIC+ (1) MIC− VEE MGR086 (a) (c) (b) (a) Magnetic or dynamic microphone. The resistor marked (1) may be connected to decrease the terminating impedance. (b) Electret microphone. (c) Piezoelectric microphone. Fig.11 Alternative microphone arrangements. handbook, full pagewidth (1) QR+ (2) QR+ QR+ QR+ QR− QR− QR− QR− VEE MGR087 (a) (b) (c) (a) Dynamic earpiece with less than 450 Ω impedance. (b) Dynamic earpiece with more than 450 Ω impedance. (c) Magnetic earpiece with more than 450 Ω impedance. The resistor marked (1) may be connected to prevent distortion (inductive load). (d) Piezoelectric earpiece. The resistor marked (2) is required to increase the phase margin (capacitive load). Fig.12 Alternative receiver arrangements. June 1990 16 (d) Philips Semiconductors Product specification Low voltage versatile telephone transmission circuit with dialler interface TEA1067 handbook, full pagewidth MSA507 R6 = ∞ 0 ∆Gv (dB) −2 R9 = 20 Ω −4 78.7 kΩ 110 kΩ 140 kΩ −6 0 20 40 60 80 100 120 140 Iline (mA) Fig.13 Variation of gain with line current, with R6 as a parameter. Table 1 Values of resistor R6 for optimum line loss compensation, for various usual values of exchange supply voltage (Vexch) and exchange feeding bridge resistance (Rexch); R9 = 20 Ω. Rexch (Ω) 400 600 800 1000 R6 (kΩ) Vexch (V) June 1990 36 100 78.7 X X 48 140 110 93.1 82 60 X X 120 102 17 Philips Semiconductors Product specification Low voltage versatile telephone transmission circuit with dialler interface handbook, full pagewidth TEA1067 Iline R1 620 Ω VCC 100 µF LN QR− IR RL 600 Ω MIC+ QR+ Vi R4 100 kΩ MIC− TEA1067 C1 Vo GAR DTMF 100 µF C4 100 pF 1 to 140 mA C7 1 nF GAS1 R7 68 kΩ MUTE 10 µF PD VEE REG Vi AGC C3 4.7 µF STAB R5 3.6 kΩ R6 GAS2 SLPE C6 100 pF R9 20 Ω MGR088 Voltage gain is defined as: Gv = 20 log Vo/Vi. For measuring the gain from MIC+ and MIC− the MUTE input should be LOW or open, for measuring the DTMF input MUTE should be HIGH. Inputs not under test should be open. Fig.14 Test circuit for defining voltage gain of MIC+, MIC− and DTMF inputs. Iline R1 handbook, full pagewidth 620 Ω 100 µF VCC QR− IR 10 µF Vi 10 µF LN MIC+ 100 µF Vo QR+ R4 100 kΩ MIC− TEA1067 C1 600 Ω ZL C4 100 pF GAR DTMF 1 to 140 mA C7 1 nF GAS1 MUTE R7 PD VEE REG C3 4.7 µF AGC STAB R5 3.6 kΩ R6 GAS2 SLPE C6 100 pF R9 20 Ω MGR089 Voltage gain is defined as: Gv = 20 log Vo/Vi. Fig.15 Test circuit for defining voltage gain of the receiving amplifier. June 1990 18 Philips Semiconductors Product specification Low voltage versatile telephone transmission circuit with dialler interface TEA1067 APPLICATION INFORMATION R1 handbook, full pagewidth 620 Ω R10 13 Ω BAS11 (2×) R2 130 kΩ LN C5 C1 100 µF VCC IR 100 nF BZX79C12 QR− + R11 DTMF QR+ telephone BZW14 line (2×) C4 100 pF R4 R3 3.92 kΩ TEA1067 from dial and control circuits MUTE GAR C7 1 nF PD − MIC+ RVA MIC− SLPE GAS1 GAS2 REG AGC STAB VEE R8 R7 390 Ω C6 Zbal R9 20 Ω 100 pF C3 4.7 µF R6 R5 3.6 kΩ MGR090 The bridge to the left, the zener diode and R10 limit the current into the circuit and the voltage across the circuit during line transients. Pulse dialling or register recall require a different protection arrangement. The DC line voltage can be set to a higher value by the resistor RVA (REG to SLPE). Fig.16 Typical application of the TEA1067, shown here with a piezoelectric earpiece and DTMF dialling. June 1990 19 Philips Semiconductors Product specification Low voltage versatile telephone transmission circuit with dialler interface TEA1067 handbook, full pagewidth LN VCC DTMF cradle contact TEA1067 MUTE PD VDD DTMF M PCD3310 FL VEE VSS telephone line BST76 (a) LN VCC VDD DTMF cradle contact MUTE TEA1067 PD PCD3320 FAMILY M DP VEE VSS telephone line BST76 (b) TEA1081 LN VCC VDD DTMF cradle contact MUTE TEA1067 PD M PCD3343 DP/FL VEE VSS telephone line BST76 I2C-bus DTMF (c) PCD3312 MGR091 (a) DTMF-Pulse set with CMOS dialling circuit PCD3310. The dashed lines show an optional flash (register recall by timed loop break). (b) Pulse dial set with one of the PCD3320 family of CMOS interrupted current-loop dialling circuits. (c) Dual-standard (pulse and DTMF) feature phone with the PCD3343 CMOS controller and the PCD3312 CMOS DTMF generator with I2C-bus. Supply is provided by the TEA1081 supply circuit. Fig.17 Typical applications of the TEA1067 (simplified). June 1990 20 Philips Semiconductors Product specification Low voltage versatile telephone transmission circuit with dialler interface TEA1067 PACKAGE OUTLINES DIP18: plastic dual in-line package; 18 leads (300 mil) SOT102-1 ME seating plane D A2 A A1 L c e Z w M b1 (e 1) b b2 MH 10 18 pin 1 index E 1 9 0 5 10 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 min. A2 max. b b1 b2 c D (1) E (1) e e1 L ME MH w Z (1) max. mm 4.7 0.51 3.7 1.40 1.14 0.53 0.38 1.40 1.14 0.32 0.23 21.8 21.4 6.48 6.20 2.54 7.62 3.9 3.4 8.25 7.80 9.5 8.3 0.254 0.85 inches 0.19 0.020 0.15 0.055 0.044 0.021 0.015 0.055 0.044 0.013 0.009 0.86 0.84 0.26 0.24 0.10 0.30 0.15 0.13 0.32 0.31 0.37 0.33 0.01 0.033 Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 93-10-14 95-01-23 SOT102-1 June 1990 EUROPEAN PROJECTION 21 Philips Semiconductors Product specification Low voltage versatile telephone transmission circuit with dialler interface TEA1067 SO20: plastic small outline package; 20 leads; body width 7.5 mm SOT163-1 D E A X c HE y v M A Z 11 20 Q A2 A (A 3) A1 pin 1 index θ Lp L 1 10 e bp detail X w M 0 5 10 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (1) e HE L Lp Q v w y mm 2.65 0.30 0.10 2.45 2.25 0.25 0.49 0.36 0.32 0.23 13.0 12.6 7.6 7.4 1.27 10.65 10.00 1.4 1.1 0.4 1.1 1.0 0.25 0.25 0.1 0.9 0.4 inches 0.10 0.012 0.096 0.004 0.089 0.01 0.019 0.013 0.014 0.009 0.51 0.49 0.30 0.29 0.050 0.419 0.043 0.055 0.394 0.016 0.043 0.039 0.01 0.01 0.004 0.035 0.016 Z (1) θ 8o 0o Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC SOT163-1 075E04 MS-013AC June 1990 EIAJ EUROPEAN PROJECTION ISSUE DATE 95-01-24 97-05-22 22 Philips Semiconductors Product specification Low voltage versatile telephone transmission circuit with dialler interface Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 °C. SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 °C. WAVE SOLDERING This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our “Data Handbook IC26; Integrated Circuit Packages” (order code 9398 652 90011). Wave soldering techniques can be used for all SO packages if the following conditions are observed: • A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. DIP • The longitudinal axis of the package footprint must be parallel to the solder flow. SOLDERING BY DIPPING OR BY WAVE The maximum permissible temperature of the solder is 260 °C; solder at this temperature must not be in contact with the joint for more than 5 seconds. The total contact time of successive solder waves must not exceed 5 seconds. • The package footprint must incorporate solder thieves at the downstream end. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (Tstg max). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. Maximum permissible solder temperature is 260 °C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 °C within 6 seconds. Typical dwell time is 4 seconds at 250 °C. REPAIRING SOLDERED JOINTS A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Apply a low voltage soldering iron (less than 24 V) to the lead(s) of the package, below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 °C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 °C, contact may be up to 5 seconds. REPAIRING SOLDERED JOINTS Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C. SO REFLOW SOLDERING Reflow soldering techniques are suitable for all SO packages. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. June 1990 TEA1067 23 Philips Semiconductors Product specification Low voltage versatile telephone transmission circuit with dialler interface TEA1067 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. June 1990 24 Philips Semiconductors Product specification Low voltage versatile telephone transmission circuit with dialler interface NOTES June 1990 25 TEA1067 Philips Semiconductors Product specification Low voltage versatile telephone transmission circuit with dialler interface NOTES June 1990 26 TEA1067 Philips Semiconductors Product specification Low voltage versatile telephone transmission circuit with dialler interface NOTES June 1990 27 TEA1067 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, Fax. +43 160 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. +45 32 88 2636, Fax. +45 31 57 0044 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615800, Fax. +358 9 61580920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex, Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 Germany: Hammerbrookstraße 69, D-20097 HAMBURG, Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 4894 339/239, Fax. +30 1 4814 240 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: PT Philips Development Corporation, Semiconductors Division, Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510, Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080 Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SÃO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 93 301 6312, Fax. +34 93 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 5985 2000, Fax. +46 8 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Internet: http://www.semiconductors.philips.com © Philips Electronics N.V. 1998 SCA60 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 415102/00/02/pp28 Date of release: June 1990 Document order number: 9397 750 nnnnn