PHILIPS TEA1067T

INTEGRATED CIRCUITS
DATA SHEET
TEA1067
Low voltage versatile telephone
transmission circuit with dialler
interface
Product specification
File under Integrated Circuits, IC03A
June 1990
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
TEA1067
• Asymmetrical high-impedance input (32 kΩ) for electret
microphone
GENERAL DESCRIPTION
The TEA1067 is a bipolar integrated circuit performing all
speech and line interface functions required in fully
electronic telephone sets. It performs electronic switching
between dialling and speech. The circuit is able to operate
down to a DC line voltage of 1.6 V (with reduced
performance) to facilitate the use of more telephone sets
in parallel.
• DTMF signal input with confidence tone
• Mute input for pulse or DTMF dialling
• Power down input for pulse dial or register recall
• Receiving amplifier for magnetic, dynamic or
piezoelectric earpieces
Features
• Large gain setting range on microphone and earpiece
amplifiers
• Low DC line voltage; operates down to 1.6 V (excluding
polarity guard)
• Line current dependent line loss compensation facility
for microphone and earpiece amplifiers
• Voltage regulator with adjustable static resistance
• Gain control adaptable to exchange supply
• DC line voltage adjustment capability
• Provides supply with limited current for external circuitry
• Symmetrical high-impedance inputs (64 kΩ) for
dynamic, magnetic or piezoelectric microphones
QUICK REFERENCE DATA
PARAMETER
CONDITIONS
Line voltage
Iline = 15 mA
Line current operating range
normal operation
SYMBOL
MIN.
TYP.
MAX.
UNIT
VLN
3.65
3.9
4.15
V
TEA1067
Iline
11
−
140
mA
TEA1067T
Iline
11
−
140
mA
with reduced performance
Iline
1
−
11
mA
input LOW
ICC
−
1
1.35
mA
input HIGH
ICC
−
55
82
µA
VCC
2.2
2.4
−
V
VCC
2.5
−
−
V
microphone amplifier
Gv
44
−
52
dB
receiving amplifier
Gv
20
−
45
dB
∆Gv
5.5
5.9
6.3
dB
Vexch
36
−
60
V
Rexch
0.4
−
1
kΩ
Internal supply current
Supply voltage for peripherals
power down
Iline = 15 mA; Ip = 1.4 mA;
mute input HIGH
Iline = 15 mA; Ip = 0.9 mA;
mute input HIGH
Voltage gain range
Line loss compensation
gain control range
Exchange supply voltage range
Exchange feeding bridge
resistance range
PACKAGE OUTLINES
TEA1067: 18-lead DIL; plastic (SOT102). SOT102-1; 1998 Jun 18.
TEA1067T: 20-lead mini-pack; plastic (SO20; SOT163A). SOT163-1; 1998 Jun 18.
June 1990
2
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
TEA1067
VCC
handbook, full pagewidth
LN
15 (17)
IR
(1)1
(6) 6
11 (12)
−
TEA1067
TEA1067T
MIC+
MIC−
DTMF
MUTE
PD
8 (9)
+
7 (7)
−
+
+
+
−
−
dB(1)
dB
(5) 5
−
(4) 4
(2) 2
QR+
QR−
GAS1
−
+
+
13 (15)
+
GAR
(3) 3
−
GAS2
14 (16)
12 (14)
SUPPLY AND
REFERENCE
LOW
VOLTAGE
CIRCUIT
AGC
CIRCUIT
CURRENT
REFERENCE
10 (11)
VEE
16 (18)
REG
17 (19)
AGC
9 (10)
STAB
Figures in parenthesis refer to TEA1067T.
Fig.1 Block diagram.
June 1990
3
(20)18
SLPE
MGR082
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
TEA1067
PINNING
handbook, halfpage
LN
1
18 SLPE
GAS1
2
17 AGC
1
LN
positive line terminal
2
GAS1
gain adjustment; transmitting amplifier
3
GAS2
gain adjustment; transmitting amplifier
4
QR−
inverting output; receiving amplifier
5
QR+
non-inverting output receiving amplifier
6
GAR
gain adjustment; receiving amplifier
7
MIC−
inverting microphone input
8
MIC+
non-inverting microphone input
9
STAB
current stabilizer
GAS2
3
16 REG
QR−
4
15 VCC
QR+
5
GAR
6
13 DTMF
10 VEE
negative line terminal
MIC−
7
12 PD
11 IR
receiving amplifier input
MIC+
8
11 IR
12 PD
power-down input
13 DTMF
dual-tone multi-frequency input
14 MUTE
mute input
15 VCC
positive supply decoupling
16 REG
voltage regulator decoupling
17 AGC
automatic gain control input
18 SLPE
slope (DC resistance) adjustment
STAB
TEA1067
14 MUTE
10 VEE
9
MGR084
Fig.2
Pinning diagram for TEA1067 18-lead DIL
version.
1
LN
positive line terminal
2
GAS1
gain adjustment; transmitting amplifier
3
GAS2
gain adjustment; transmitting amplifier
20 SLPE
4
QR−
inverting output; receiving amplifier
GAS1 2
19 AGC
5
QR+
non-inverting output receiving amplifier
GAS2 3
18 REG
6
GAR
gain adjustment, receiving amplifier
7
MIC−
inverting microphone input
handbook, halfpage
LN 1
QR− 4
17 VCC
8
n.c.
not connected
QR+ 5
16 MUTE
9
MIC+
non-inverting microphone input
GAR 6
15 DTMF
10
STAB
current stabilizer
MIC− 7
14 PD
11
VEE
negative line terminal
n.c. 8
13 n.c.
12
IR
receiving amplifier input
MIC+ 9
12 IR
13
n.c.
not connected
STAB 10
11 VEE
14
PD
power-down input
15
DTMF
dual-tone multi-frequency input
16
MUTE
mute input
17
VCC
positive supply decoupling
18
REG
voltage regulator decoupling
19
AGC
automatic gain control input
20
SLPE
slope (DC resistance) adjustment
TEA1067T
MGR083
Fig.3
June 1990
Pinning diagram for TEA1067T 20-lead
mini-pack version.
4
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
In normal use the value of R9 would be 20 Ω. Changing the
value of R9 will also affect microphone gain, DTMF gain,
gain control characteristics, side-tone level and maximum
output swing on LN, and the DC characteristics (especially
at the lower voltages).
FUNCTIONAL DESCRIPTION
Supply: VCC, LN, SLPE, REG and STAB
Power for the TEA1067 and its peripheral circuits is usually
obtained from the telephone line. The IC develops its own
supply at VCC and regulates its voltage drop. The supply
voltage VCC may also be used to supply external circuits
e.g. dialling and control circuits.
Under normal conditions, when ISLPE >> ICC + 0.5 mA + Ip,
the static behaviour of the circuit is that of a 3.6 V regulator
diode with an internal resistance equal to that of R9. In the
audio frequency range the dynamic impedance is largely
determined by R1. Fig.4 shows the equivalent impedance
of the circuit.
Decoupling of the supply voltage is performed by a
capacitor between VCC and VEE while the internal voltage
regulator is decoupled by a capacitor between REG and
VEE.
At line currents below 9 mA the internal reference voltage
is automatically adjusted to a lower value (typically 1.6 V
at 1 mA). This means that the operation of more sets in
parallel is possible with DC line voltages (excluding the
polarity guard) down to an absolute minimum voltage of
1.6 V. With line currents below 9 mA the circuit has limited
sending and receiving levels. The internal reference
voltage can be adjusted by means of an external resistor
(RVA). This resistor connected between LN and REG will
decrease the internal reference voltage, connected
between REG and SLPE it will increase the internal
reference voltage.
The DC current drawn by the device will vary in
accordance with varying values of the exchange voltage
(Vexch), the feeding bridge resistance (Rexch), and the DC
resistance of the telephone line (Rline).
The TEA1067 has an internal current stabilizer working at
a level determined by a 3.6 kΩ resistor connected
between STAB and VEE (see Fig.7). When the line current
(Iline) is more than 0.5 mA greater than the sum of the IC
supply current (ICC) and the current drawn by the
peripheral circuitry connected to VCC (Ip) the excess
current is shunted to VEE via LN.
The regulated voltage on the line terminal (VLN) can be
calculated as:
Current (Ip) available from VCC for peripheral circuits
depends on the external components used. Fig.10 shows
this current for VCC > 2.2 V. If MUTE is LOW when the
receiving amplifier is driven the available current is further
reduced. Current availability can be increased by
connecting the supply IC (TEA1081) in parallel with R1, as
shown in Fig.17 (c), or by increasing the DC line voltage by
means of an external resistor (RVA) connected between
REG and SLPE.
VLN = Vref + ISLPE × R9; or
VLN = Vref + [(Iline − ICC − 0.5 × 10−3 A) − Ip] × R9
Where Vref is an internally generated temperature
compensated reference voltage of 3.6 V and R9 is an
external resistor connected between SLPE and VEE.
June 1990
TEA1067
5
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
TEA1067
Dual-tone multi-frequency input (DTMF)
LN
handbook, halfpage
Leq
Rp
R1
Vref
REG
VCC
R9
20 Ω
VEE
C3
4.7 µF
When the DTMF input is enabled dialling tones may be
sent onto the line. The voltage gain from DTMF to LN is
typically 25.5 dB (when R7 = 68 kΩ) and varies with R7 in
the same way as the microphone gain. The signalling
tones can be heard in the earpiece at a low level
(confidence tone).
C1
100 µF
Receiving Amplifier (IR, QR+, QR− and GAR)
MBA454
The receiving amplifier has one input (IR), one
non-inverting complementary output (QR+) and an
inverting complementary output (QR−). These outputs
may be used for single-ended or differential drive
depending on the sensitivity and type of earpiece used
(see Fig.12). IR to QR + gain is typically 31 dB (when
R4 = 100 kΩ), this is sufficient for low-impedance
magnetic or dynamic microphones which are suited for
single-ended drive. Using both outputs for differential drive
gives an additional gain of 6 dB. This feature can be used
when the earpiece impedance exceeds 450 Ω
(high-impedance dynamic or piezoelectric types).
Rp = 16.2 kΩ
Leq = C3 × R9 × Rp
Fig.4 Equivalent impedance circuit.
Microphone inputs (MIC+ and MIC−) and gain
adjustment pins (GAS1 and GAS2)
The TEA1067 has symmetrical microphone inputs. Its
input impedance is 64 kΩ (2 × 32 kΩ) and its voltage gain
is typically 52 dB (when R7 = 68 kΩ, see Fig.14). Dynamic,
magnetic, piezoelectric or electret (with built-in FET source
followers) microphones can be used. Microphone
arrangements are shown in Fig.11.
The receiving amplifier gain can be adjusted between 20
and 39 dB with single-ended drive and between 26 and
45 dB with differential drive, to match the sensitivity of the
transducer in use. The gain is set with the value of R4
which is connected between GAR and QR+. Overall
receive gain between LN and QR+ is calculated by
substracting the anti-sidetone network attenuation (32 dB)
from the amplifier gain. Two external capacitors C4 and
C7, ensure stability. C4 is normally 100 pF and C7 is
10 × the value of C4. The value of C4 may be increased to
obtain a first-order low-pass filter. The cut-off frequency
will depend on the time constant R4 × C4.
The output voltage of the receiving amplifier is specified for
continuous-wave drive. The maximum output voltage will
be higher under speech conditions where the peak to RMS
ratio is higher.
The gain of the microphone amplifier can be adjusted
between 44 dB and 52 dB to suit the sensitivity of the
transducer in use. The gain is proportional to the value of
R7 which is connected between GAS1 and GAS2. Stability
is ensured by the external capacitor C6 which is connected
between GAS1 and SLPE. The value of C6 is 100 pF but
this may be increased to obtain a first-order low-pass filter.
The cut-off frequency corresponds to the time constant
R7 × C6.
Mute input (MUTE)
When MUTE is HIGH the DTMF input is enabled and the
microphone and receiving amplifier inputs are inhibited.
The reverse is true when MUTE is LOW or open-circuit.
MUTE switching causes only negligible clicking on the
earpiece outputs and line. If the number of parallel sets in
use causes a drop in line current to below 6 mA the speech
amplifiers remain active independent to the DC level
applied to the MUTE input.
June 1990
6
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
Side-tone suppression
Automatic gain control input (AGC)
The anti-sidetone network, R1//Zline, R2, R3, R9 and Zbal,
(see Fig.5) suppresses transmitted signal in the earpiece.
Compensation is maximum when the following conditions
are fulfilled:
Automatic line loss compensation is achieved by
connecting a resistor (R6) between AGC and VEE. The
automatic gain control varies the gain of the microphone
amplifier and the receiving amplifier in accordance with the
DC line current. The control range is 5.9 dB. This
corresponds to a line length of 5 km for a 0.5 mm diameter
copper twisted-pair cable with a DC resistance of
176 Ω/km and an average attenuation 1.2 dB/km. Resistor
R6 should be chosen in accordance with the exchange
supply voltage and its feeding bridge resistance (see
Fig.13 and Table 1). The ratio of start and stop currents of
the AGC curve is independent of the value of R6. If no
automatic line loss compensation is required the AGC may
be left open-circuit. The amplifiers, in this condition, will
give their maximum specified gain.
(a) R9 × R2 = R1 (R3 + [R8//Zbal]);
(b) (Zbal / [Zbal + R8]) = (Zline / [Zline + R1])
If fixed values are chosen for R1, R2, R3, and R9 then
condition (a) will always be fulfilled when  R8//Zbal << R3.
To obtain optimum side-tone suppression condition (b)
has to be fulfilled resulting in:
Zbal = (R8/R1) Zline = k.Zline where k is a scale factor;
k = (R8/R1)
The scale factor (k), dependent on the value of R8, is
chosen to meet the following criteria:
Power-down input (PD)
(a) Compatibility with a standard capacitor from the E6 or
E12 range for Zbal
During pulse dialling or register recall (timed loop break)
the telephone line is interrupted. During these interruptions
the telephone line provides no power for the transmission
circuit or circuits supplied by VCC. The charge held on C1
will bridge these gaps. This bridging is made easier by a
HIGH level on the PD input which reduces the typical
supply current from 1 mA to 55 µA and switches off the
voltage regulator preventing discharge through LN. When
PD is HIGH the capacitor at REG is disconnected with the
effect that the voltage stabilizer will have no switch-on
delay after line interruptions. This minimizes the
contribution of the IC to the current waveform during pulse
dialling or register recall. When this facility is not required
PD may be left open-circuit.
June 1990
TEA1067
(b)  Zbal//R8 << R3 to fulfil condition (a) and thus
ensuring correct anti-sidetone bridge operation
(c)  Zbal + R8 >> R9 to avoid influencing the transmitter
gain
In practice Zline varies considerably with the line type and
length. The value chosen for Zbal should therefore be for
an average line length thus giving optimum setting for
short or long lines.
7
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
TEA1067
The anti-sidetone network for the TEA1060 family shown
in Fig.5 attenuates the signal received from the line by 32
dB before it enters the receiving amplifier. The attenuation
is almost constant over the whole audio frequency range.
Fig.6 shows a conventional Wheatstone bridge
anti-sidetone circuit that can be used as an alternative.
Both bridge types can be used with either resistive or
complex set impedances.
Example
The line balance impedance (Zbal) at which the optimum
suppression is present can be calculated by:
suppose Zline = 210 Ω + (1265 Ω//140 nF), representing a
5 km line of 0.5 mm diameter, copper, twisted-pair cable
matched to 600 Ω (176 Ω/km; 38 nF/km).
When k = 0.64 then R8 = 390 Ω;
Zbal = 130 Ω + (820 Ω//220 nF).
LN
handbook, full pagewidth
Zline
R1
R2
IR
im
VEE
Rt
R3
R9
R8
Zbal
SLPE
MSA500
Fig.5 Equivalent circuit of TEA1060 anti-sidetone bridge.
LN
handbook, full pagewidth
Zline
R1
Zbal
IR
im
VEE
Rt
R9
R8
RA
SLPE
MSA501
Fig.6 Equivalent circuit of an anti-sidetone network in a Wheatstone bridge configuration.
More information can be found in the designer guide; 9398 341 10011
June 1990
8
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
TEA1067
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
PARAMETER
CONDITIONS
SYMBOL
MIN.
MAX.
UNIT
VLN
−
12
V
VLN
−
13.2
V
(Fig.16)
VLN
−
28
V
Line current TEA1067 (note 1)
R9 = 20 Ω
Iline
−
140
mA
Line current TEA1067T (note 1)
R9 = 20 Ω
Iline
−
140
mA
Vi
−
VCC + 0.7
V
−Vi
−
0.7
V
Ptot
−
769
mW
Positive continuous line voltage
Repetitive line voltage during
switch-on line interruption
Repetitive peak line voltage for a
1 ms pulse per 5 s
R9 = 20 Ω;
R10 = 13 Ω
Voltage on all other pins
Total power dissipation (note 2)
R9 = 20 Ω
TEA1067
Ptot
−
550
mW
Storage temperature range
Tstg
−40
+ 125
°C
Operating ambient temperature range
Tamb
−25
+ 75
°C
Junction temperature
Tj
−
+ 125
°C
TEA1067T
Notes
1. Mostly dependent on the maximum required Tamb and on the voltage between LN and SLPE.
See Figs 7 and 8 to determine the current as a function of the required voltage and the
temperature.
2. Calculated for the maximum ambient temperature specified Tamb = 75 °C and a maximum
junction temperature of 125 °C.
THERMAL RESISTANCE
From junction to ambient in free air
TEA1067
Rth j-a
typ.
65
K/W
TEA1067T mounted on glass epoxy board 41 × 19 × 1.5 mm
Rth j-a
typ.
90
K/W
June 1990
9
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
TEA1067
MBH133
160
LN
(mA)
140
handbook,
halfpage
I
(1)
120
(2)
100
(3)
80
(4)
60
40
2
4
6
8
10
12
VLN-VSLPE (V)
Tamb
Ptot
(1)
45 °C
1231 mW
(2)
55 °C
1077 mW
(3)
65 °C
923 mW
(4)
75 °C
769 mW
Fig.7 TEA1067 safe operating area.
MSA546
150
LN
(mA)
130
handbook,
halfpage
I
110
90
(1)
(2)
70
(3)
(4)
50
Tamb
30
2
4
6
8
10
12
VLN-VSLPE (V)
Fig.8 TEA1067T safe operating area.
June 1990
10
Ptot
(1)
45 °C
888 mW
(2)
55 °C
777 mW
(3)
65 °C
666 mW
(4)
75 °C
555 mW
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
TEA1067
CHARACTERISTICS
Iline = 11 to 140 mA; VEE = 0 V; f = 800 Hz; Tamb = 25 °C; unless otherwise specified
PARAMETER
CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Supply; LN and VCC
Voltage drop over circuit,
between LN and VEE
Variation with temperature
microphone inputs open
Iline = 1 mA
VLN
−
1.6
−
V
Iline = 4 mA
VLN
1.75
2.0
2.25
V
Iline = 7 mA
VLN
2.25
2.8
3.35
V
Iline = 11 mA
VLN
3.55
3.8
4.05
V
Iline = 15 mA
VLN
3.65
3.9
4.15
V
Iline = 100 mA
VLN
4.9
5.6
6.5
V
Iline = 140 mA
VLN
−
−
7.5
V
Iline = 15 mA
∆VLN/∆T
−3
−1
1
mV/K
3.1
3.4
3.7
V
4.2
4.5
4.8
V
ICC
−
1.0
1.35
mA
ICC
−
55
82
µA
Ip = 1.4 mA
VCC
2.2
2.4
−
V
Ip = 0 mA
VCC
2.95
3.2
−
V
 Zi
51
64
77
kΩ
 Zi
25.5
32
38.5
kΩ
kCMR
−
82
−
dB
Gv
51
52
53
dB
Voltage drop over circuit,
between LN and VEE with
external resistor RVA
Iline = 15 mA;
RVA (LN to REG)
= 68 kΩ
Iline = 15 mA;
RVA (REG to SLPE)
= 39 kΩ
Supply current
PD = LOW;
VCC = 2.8 V
Supply current
PD = HIGH;
VCC = 2.8 V
Supply voltage available for
peripheral circuitry
Iline = 15 mA;
MUTE = HIGH
Microphone inputs
MIC+ and MIC−
Input impedance (differential)
between MIC− and MIC+
Input impedance (single-ended)
MIC− or MIC+ to VEE
Common mode rejection ratio
Voltage gain
MIC+/MIC− to LN
Iline = 15 mA;
R7 = 68 kΩ
June 1990
11
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
PARAMETER
CONDITION
TEA1067
SYMBOL
MIN.
TYP.
MAX.
UNIT
Gain variation with frequency
at f = 300 Hz
and f = 3400 Hz
∆Gvf
−0.5
± 0.2
+0.5
dB
∆GvT
−
± 0.2
−
dB
 Zi
16.8
20.7
24.6
kΩ
R7 = 68 kΩ
Gv
24.5
25.5
26.5
dB
w.r.t. 800 Hz
∆Gvf
−0.5
±0.2
+0.5
dB
∆GvT
−
±0.2
−
dB
∆Gv
−8
−
0
dB
THD = 2%
VLN(rms)
−
1.9
−
V
THD = 10%
VLN(rms)
1.9
2.2
−
V
VLN(rms)
−
0.8
−
V
VLN(rms)
−
1.4
−
V
Vno(rms)
−
−72
−
dBmp
 Zi
17
21
25
kΩ
w.r.t 800 Hz
Gain variation with temperature
at −25 °C
and + 75 °C
w.r.t. 25 °C
without R6;
Iline = 50 mA
Dual-tone multi-frequency
input DTMF
Input impedance
Voltage gain from DTMF to LN
Iline = 15 mA;
Gain variation with frequency
at f = 300 Hz and f = 3400 Hz
Gain variation with temperature
at −25 °C and +75 °C
w.r.t. 25 °C
Iline = 50 mA
Gain adjustment
GAS1 and GAS2
Gain variation of the
transmitting amplifier by
varying R7 between GAS1
and GAS2
Sending amplifier output LN
Output voltage
Iline = 15 mA
Iline = 4 mA;
THD = 10%
Iline = 7 mA;
THD = 10%
Noise output voltage
Iline = 15 mA;
R7 = 68 kΩ;
200 Ω between
MIC− and MIC+;
psophometrically
weighted (P53 curve)
Receiving amplifier input IR
Input impedance
June 1990
12
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
PARAMETER
CONDITION
TEA1067
SYMBOL
MIN.
TYP.
MAX.
UNIT
Receiving amplifier outputs
QR+ and QR−
Output impedance
 Zo
−
4
−
Ω
Gv
30
31
32
dB
QR−) = 600 Ω
Gv
36
37
38
dB
w.r.t. 800 Hz
∆Gvf
−0.5
−0.2
0
dB
∆GvT
−
±0.2
−
dB
RL = 150 Ω
Vo(rms)
0.25
0.29
−
V
RL = 450 Ω
Vo(rms)
0.45
0.55
−
V
Vo(rms)
0.65
0.80
−
V
Iline = 4 mA
Vo(rms)
−
15
−
mV
Iline = 7 mA
Vo(rms)
−
130
−
mV
(single-ended)
Voltage gain from IR to
QR+ or QR−
Iline = 15 mA
R4 = 100 kΩ
single-ended
RL (from QR+ or
QR−) = 300 Ω
differential
RL (from QR+ or
Gain variation with frequency
at f = 300 Hz
and f = 3400 Hz
Gain variation with temperature
at −25 °C and +75 °C
w.r.t. 25 °C
without R6;
Iline = 50 mA
Output voltage
sinewave drive
Iline = 15 mA;
Ip = 0 mA; THD = 2%
R4 = 100 kΩ
single-ended
differential
f = 3400 Hz;
series R = 100 Ω;
CL = 47 nF
Output voltage
THD = 10%;
RL = 150 Ω
R4 = 100 kΩ
Noise output voltage
Iline = 15 mA;
R4 = 100 kΩ;
IR open-circuit
psophometrically
weighted; (P53 curve)
single-ended
RL = 300 Ω
Vno(rms)
−
50
−
µV
differential
RL = 600 Ω
Vno(rms)
−
100
−
µV
June 1990
13
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
PARAMETER
CONDITION
TEA1067
SYMBOL
MIN.
TYP.
MAX.
UNIT
Gain adjustment GAR
Gain variation of receiving
amplifier achievable by
varying R4 between
∆Gv
−11
−
+8
dB
Input voltage HIGH
VIH
1.5
−
VCC
V
Input voltage LOW
VIL
−
−
0.3
V
Input current
IMUTE
−
8
15
µA
∆Gv
−
70
−
dB
Gv
−21
−19
−17
dB
GAR and QR
Mute input
Gain reduction
MIC+ or MIC− to LN
MUTE = HIGH
Voltage gain from DTMF
to QR+ or QR−
MUTE = HIGH;
R4 = 100 kΩ;
single-ended;
RL = 300 Ω
Power-down input PD
Input voltage HIGH
VIH
1.5
−
VCC
V
Input voltage LOW
VIL
−
−
0.3
V
Input current
IPD
−
5
10
µA
∆Gv
−5.5
−5.9
−6.3
dB
Iline
−
23
−
mA
Iline
−
61
−
mA
∆Gv
−1.0
−1.5
−2.0
dB
Automatic gain control
input AGC
Controlling the gain
from IR to QR+/QR− and
the gain from MIC+/MIC−
to LN; R6 between AGC
and VEE
Gain control range
R6 = 110 kΩ
Iline = 70 mA
Highest line current for
maximum gain
Minimum line current for
minimum gain
Reduction of gain between
Iline = 15 mA and
Iline = 35 mA
June 1990
14
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
Rline
handbook, full pagewidth
Iline
TEA1067
R1
ISLPE + 0.5 mA
ICC
Ip
LN
TEA1067
Rexch
VCC
0.5 mA
DC
C1
AC
Vexch
REG
STAB
SLPE
peripheral
circuits
VEE
ISLPE
C3
R5
R9
MBH123
Fig.9 Supply arrangement.
MGR085
handbook, halfpage
2
a
IP
(mA)
b
1
0
0
1
2
Curve (a) is valid when the receiving amplifier is not driven or when MUTE = HIGH,
curve (b) is valid when MUTE = LOW and the receiving amplifier is driven;
Vo(rms) = 150 mV, RL = 150 Ω asymmetrical. The supply possibilities can be increased
simply by setting the voltage drop over the circuit VLN to a higher value by means of
resistor RVA connected between REG and SLPE.
3
VCC (V)
4
(a) Ip = 1.8 mA
(b) Ip = 1.35 mA
Iline = 15 mA at VLN = 3.9 V
R1 = 620 Ω and R9 = 20 Ω.
Fig.10 Typical current Ip available from VCC for peripheral circuitry with VCC ≥ 2.2 V.
June 1990
15
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
TEA1067
handbook, full pagewidth
MIC+
MIC−
MIC−
MIC+
VCC
MIC+
(1)
MIC−
VEE
MGR086
(a)
(c)
(b)
(a) Magnetic or dynamic microphone. The resistor marked (1) may be connected to decrease
the terminating impedance.
(b) Electret microphone.
(c) Piezoelectric microphone.
Fig.11 Alternative microphone arrangements.
handbook, full pagewidth
(1)
QR+
(2)
QR+
QR+
QR+
QR−
QR−
QR−
QR−
VEE
MGR087
(a)
(b)
(c)
(a) Dynamic earpiece with less than 450 Ω impedance.
(b) Dynamic earpiece with more than 450 Ω impedance.
(c) Magnetic earpiece with more than 450 Ω impedance. The resistor marked (1) may be connected
to prevent distortion (inductive load).
(d) Piezoelectric earpiece. The resistor marked (2) is required to increase the phase margin
(capacitive load).
Fig.12 Alternative receiver arrangements.
June 1990
16
(d)
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
TEA1067
handbook, full pagewidth
MSA507
R6 = ∞
0
∆Gv
(dB)
−2
R9 = 20 Ω
−4
78.7 kΩ 110 kΩ 140 kΩ
−6
0
20
40
60
80
100
120
140
Iline (mA)
Fig.13 Variation of gain with line current, with R6 as a parameter.
Table 1
Values of resistor R6 for optimum line loss
compensation, for various usual values of
exchange supply voltage (Vexch) and exchange
feeding bridge resistance (Rexch); R9 = 20 Ω.
Rexch (Ω)
400
600
800
1000
R6 (kΩ)
Vexch
(V)
June 1990
36
100
78.7
X
X
48
140
110
93.1
82
60
X
X
120
102
17
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
handbook, full pagewidth
TEA1067
Iline
R1
620 Ω
VCC
100 µF
LN
QR−
IR
RL
600 Ω
MIC+
QR+
Vi
R4
100
kΩ
MIC−
TEA1067
C1
Vo
GAR
DTMF
100 µF
C4
100 pF
1 to
140 mA
C7 1 nF
GAS1
R7
68
kΩ
MUTE
10 µF
PD
VEE
REG
Vi
AGC
C3
4.7
µF
STAB
R5
3.6
kΩ
R6
GAS2
SLPE
C6
100 pF
R9
20 Ω
MGR088
Voltage gain is defined as: Gv = 20 log  Vo/Vi. For measuring the gain from
MIC+ and MIC− the MUTE input should be LOW or open, for measuring the
DTMF input MUTE should be HIGH. Inputs not under test should be open.
Fig.14 Test circuit for defining voltage gain of MIC+, MIC− and DTMF inputs.
Iline
R1
handbook, full pagewidth
620 Ω
100 µF
VCC
QR−
IR
10 µF
Vi
10 µF
LN
MIC+
100 µF
Vo
QR+
R4
100
kΩ
MIC−
TEA1067
C1
600 Ω
ZL
C4
100 pF
GAR
DTMF
1 to
140 mA
C7 1 nF
GAS1
MUTE
R7
PD
VEE
REG
C3
4.7
µF
AGC
STAB
R5
3.6
kΩ
R6
GAS2
SLPE
C6
100 pF
R9
20 Ω
MGR089
Voltage gain is defined as: Gv = 20 log  Vo/Vi.
Fig.15 Test circuit for defining voltage gain of the receiving amplifier.
June 1990
18
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
TEA1067
APPLICATION INFORMATION
R1
handbook, full pagewidth
620 Ω
R10
13 Ω
BAS11
(2×)
R2
130 kΩ
LN
C5
C1
100
µF
VCC
IR
100 nF
BZX79C12
QR−
+
R11
DTMF
QR+
telephone
BZW14
line
(2×)
C4
100
pF
R4
R3
3.92
kΩ
TEA1067
from dial
and
control circuits
MUTE
GAR
C7
1 nF
PD
−
MIC+
RVA
MIC−
SLPE
GAS1 GAS2
REG
AGC STAB
VEE
R8
R7
390 Ω
C6
Zbal
R9
20 Ω
100 pF
C3
4.7
µF
R6
R5
3.6
kΩ
MGR090
The bridge to the left, the zener diode and R10 limit the current into the circuit
and the voltage across the circuit during line transients. Pulse dialling or
register recall require a different protection arrangement.
The DC line voltage can be set to a higher value by the resistor RVA (REG to
SLPE).
Fig.16 Typical application of the TEA1067, shown here with a piezoelectric earpiece and DTMF dialling.
June 1990
19
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
TEA1067
handbook, full pagewidth
LN
VCC
DTMF
cradle
contact
TEA1067 MUTE
PD
VDD
DTMF
M
PCD3310
FL
VEE
VSS
telephone
line
BST76
(a)
LN
VCC
VDD
DTMF
cradle
contact
MUTE
TEA1067
PD
PCD3320
FAMILY
M
DP
VEE
VSS
telephone
line
BST76
(b)
TEA1081
LN
VCC
VDD
DTMF
cradle
contact
MUTE
TEA1067
PD
M
PCD3343
DP/FL
VEE
VSS
telephone
line
BST76
I2C-bus
DTMF
(c)
PCD3312
MGR091
(a) DTMF-Pulse set with CMOS dialling circuit PCD3310.
The dashed lines show an optional flash (register recall by timed loop break).
(b) Pulse dial set with one of the PCD3320 family of CMOS interrupted current-loop dialling circuits.
(c) Dual-standard (pulse and DTMF) feature phone with the PCD3343 CMOS controller and the
PCD3312 CMOS DTMF generator with I2C-bus. Supply is provided by the TEA1081 supply circuit.
Fig.17 Typical applications of the TEA1067 (simplified).
June 1990
20
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
TEA1067
PACKAGE OUTLINES
DIP18: plastic dual in-line package; 18 leads (300 mil)
SOT102-1
ME
seating plane
D
A2
A
A1
L
c
e
Z
w M
b1
(e 1)
b
b2
MH
10
18
pin 1 index
E
1
9
0
5
10 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
UNIT
A
max.
A1
min.
A2
max.
b
b1
b2
c
D (1)
E (1)
e
e1
L
ME
MH
w
Z (1)
max.
mm
4.7
0.51
3.7
1.40
1.14
0.53
0.38
1.40
1.14
0.32
0.23
21.8
21.4
6.48
6.20
2.54
7.62
3.9
3.4
8.25
7.80
9.5
8.3
0.254
0.85
inches
0.19
0.020
0.15
0.055
0.044
0.021
0.015
0.055
0.044
0.013
0.009
0.86
0.84
0.26
0.24
0.10
0.30
0.15
0.13
0.32
0.31
0.37
0.33
0.01
0.033
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
93-10-14
95-01-23
SOT102-1
June 1990
EUROPEAN
PROJECTION
21
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
TEA1067
SO20: plastic small outline package; 20 leads; body width 7.5 mm
SOT163-1
D
E
A
X
c
HE
y
v M A
Z
11
20
Q
A2
A
(A 3)
A1
pin 1 index
θ
Lp
L
1
10
e
bp
detail X
w M
0
5
10 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D (1)
E (1)
e
HE
L
Lp
Q
v
w
y
mm
2.65
0.30
0.10
2.45
2.25
0.25
0.49
0.36
0.32
0.23
13.0
12.6
7.6
7.4
1.27
10.65
10.00
1.4
1.1
0.4
1.1
1.0
0.25
0.25
0.1
0.9
0.4
inches
0.10
0.012 0.096
0.004 0.089
0.01
0.019 0.013
0.014 0.009
0.51
0.49
0.30
0.29
0.050
0.419
0.043
0.055
0.394
0.016
0.043
0.039
0.01
0.01
0.004
0.035
0.016
Z
(1)
θ
8o
0o
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
REFERENCES
OUTLINE
VERSION
IEC
JEDEC
SOT163-1
075E04
MS-013AC
June 1990
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
95-01-24
97-05-22
22
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.
SOLDERING
Introduction
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.
WAVE SOLDERING
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “Data Handbook IC26; Integrated Circuit Packages”
(order code 9398 652 90011).
Wave soldering techniques can be used for all SO
packages if the following conditions are observed:
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.
DIP
• The longitudinal axis of the package footprint must be
parallel to the solder flow.
SOLDERING BY DIPPING OR BY WAVE
The maximum permissible temperature of the solder is
260 °C; solder at this temperature must not be in contact
with the joint for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.
• The package footprint must incorporate solder thieves at
the downstream end.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (Tstg max). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.
Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.
REPAIRING SOLDERED JOINTS
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Apply a low voltage soldering iron (less than 24 V) to the
lead(s) of the package, below the seating plane or not
more than 2 mm above it. If the temperature of the
soldering iron bit is less than 300 °C it may remain in
contact for up to 10 seconds. If the bit temperature is
between 300 and 400 °C, contact may be up to 5 seconds.
REPAIRING SOLDERED JOINTS
Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.
SO
REFLOW SOLDERING
Reflow soldering techniques are suitable for all SO
packages.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
June 1990
TEA1067
23
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
TEA1067
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
June 1990
24
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
NOTES
June 1990
25
TEA1067
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
NOTES
June 1990
26
TEA1067
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
NOTES
June 1990
27
TEA1067
Philips Semiconductors – a worldwide company
Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,
Tel. +61 2 9805 4455, Fax. +61 2 9805 4466
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010,
Fax. +43 160 101 1210
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773
Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 689 211, Fax. +359 2 689 102
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Colombia: see South America
Czech Republic: see Austria
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,
Tel. +45 32 88 2636, Fax. +45 31 57 0044
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615800, Fax. +358 9 61580920
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,
Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 23 53 60, Fax. +49 40 23 536 300
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,
Tel. +30 1 4894 339/239, Fax. +30 1 4814 240
Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. +27 11 470 5911, Fax. +27 11 470 5494
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 93 301 6312, Fax. +34 93 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Internet: http://www.semiconductors.philips.com
© Philips Electronics N.V. 1998
SCA60
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
415102/00/02/pp28
Date of release: June 1990
Document order number:
9397 750 nnnnn