IRF IRG4BC10KDPBF

PD -94903
IRG4BC10KDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Short Circuit Rated
UltraFast IGBT
C
Features
• High short circuit rating optimized for motor control,
tsc =10µs, @360V VCE (start), TJ = 125°C,
VGE = 15V
• Combines low conduction losses with high
switching speed
• Tighter parameter distribution and higher efficiency
than previous generations
• IGBT co-packaged with HEXFREDTM ultrafast,
ultrasoft recovery antiparallel diodes
• Lead-Free
VCES = 600V
VCE(on) typ. = 2.39V
G
@VGE = 15V, IC = 5.0A
E
n-channel
Benefits
• Latest generation 4 IGBTs offer highest power density
motor controls possible
• HEXFREDTM diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses
TO-220AB
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
tsc
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Thermal Resistance
Parameter
RθJC
RθJC
RθCS
RθJA
Wt
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Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Max.
Units
600
9.0
5.0
18
18
4.0
16
10
± 20
38
15
-55 to +150
V
A
µs
V
W
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Min.
Typ.
Max.
–––
–––
–––
–––
–––
–––
–––
0.50
–––
2 (0.07)
3.3
7.0
–––
80
–––
Units
°C/W
g (oz)
1
12/23/03
IRG4BC10KDPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
∆V(BR)CES/∆TJ
VCE(on)
VGE(th)
∆VGE(th)/∆TJ
gfe
ICES
VFM
IGES
Parameter
Min. Typ. Max. Units
Conditions
Collector-to-Emitter Breakdown Voltageƒ
600 —
—
V
VGE = 0V, IC = 250µA
Temperature Coeff. of Breakdown Voltage — 0.58 — V/°C VGE = 0V, IC = 1.0mA
Collector-to-Emitter Saturation Voltage
— 2.39 2.62
IC = 5.0A
VGE = 15V
See Fig. 2, 5
— 3.25 —
V
IC = 9.0A
— 2.63 —
IC = 5.0A, TJ = 150°C
Gate Threshold Voltage
3.0
—
6.5
VCE = VGE, IC = 250µA
Temperature Coeff. of Threshold Voltage
—
-11
— mV/°C VCE = VGE, IC = 250µA
Forward Transconductance „
1.2 1.8
—
S
VCE = 50V, IC = 5.0A
Zero Gate Voltage Collector Current
—
—
250
µA
VGE = 0V, VCE = 600V
—
— 1000
VGE = 0V, VCE = 600V, TJ = 150°C
Diode Forward Voltage Drop
—
1.5 1.8
V
IC = 4.0A
See Fig. 13
—
1.4 1.7
IC = 4.0A, TJ = 150°C
Gate-to-Emitter Leakage Current
—
— ±100 nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
tsc
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Irr
Diode Peak Reverse Recovery Current
Qrr
Diode Reverse Recovery Charge
di(rec)M /dt
Diode Peak Rate of Fall of Recovery
During tb
2
Min.
—
—
—
—
—
—
—
—
—
—
10
Typ.
19
2.9
9.8
49
28
97
140
0.25
0.14
0.39
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
46
32
100
310
0.56
7.5
220
29
7.5
28
38
2.9
3.7
40
70
280
235
Max. Units
Conditions
29
IC = 5.0A
4.3
nC
VCC = 400V
See Fig.8
15
VGE = 15V
—
—
TJ = 25°C
ns
150
IC = 5.0A, VCC = 480V
210
VGE = 15V, RG = 100Ω
—
Energy losses include "tail"
—
mJ and diode reverse recovery
0.48
See Fig. 9,10,14
—
µs
VCC = 360V, TJ = 125°C
VGE = 15V, RG = 100Ω , VCPK < 500V
—
TJ = 150°C,
See Fig. 10,11,14
—
IC = 5.0A, VCC = 480V
ns
—
VGE = 15V, RG = 100Ω
—
Energy losses include "tail"
—
mJ and diode reverse recovery
—
nH
Measured 5mm from package
—
VGE = 0V
—
pF
VCC = 30V
See Fig. 7
—
ƒ = 1.0MHz
42
ns
TJ = 25°C See Fig.
57
TJ = 125°C
14
IF = 4.0A
5.2
A
TJ = 25°C See Fig.
6.7
TJ = 125°C
15
VR = 200V
60
nC
TJ = 25°C See Fig.
105
TJ = 125°C
16
di/dt = 200A/µs
—
A/µs TJ = 25°C See Fig.
—
TJ = 125°C
17
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IRG4BC10KDPbF
6.0
For both:
Duty cycle: 50%
TJ = 125°C
Tsink = 90°C
Gate drive as specified
LOAD CURRENT (A)
5.0
4.0
Power Dissipation = 9.2 W
Square wave:
60% of rated
voltage
3.0
I
2.0
Ideal diodes
1.0
0.0
0.1
1
10
100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
TJ = 25 °C
10
1
1.0
TJ = 150 °C
V GE = 15V
20µs PULSE WIDTH
2.0
3.0
4.0
5.0
6.0
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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7.0
I C , Collector-to-Emitter Current (A)
I C, Collector Current (A)
100
10
TJ = 150 °C
TJ = 25 °C
1
5
10
V CC = 50V
5µs PULSE WIDTH
15
20
VGE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
IRG4BC10KDPbF
5.0
VCE , Collector-to-Emitter Voltage(V)
Maximum DC Collector Current(A)
10
8
6
4
2
0
25
50
75
100
125
150
VGE = 15V
80 us PULSE WIDTH
4.0
3.0
IC =
5A
IC = 2.5 A
2.0
1.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( ° C)
TC , Case Temperature ( °C)
Fig. 4 - Maximum Collector Current vs. Case
Temperature
IC = 10 A
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Thermal Response (Z thJC )
10
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
0.01
0.00001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = PDM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4BC10KDPbF
VGE = 0V,
f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
300
Cies
200
100
Coes
0
20
VGE , Gate-to-Emitter Voltage (V)
C, Capacitance (pF)
400
16
12
8
4
Cres
1
10
0
100
VCE , Collector-to-Emitter Voltage (V)
10
Total Switching Losses (mJ)
Total Switching Losses (mJ)
V CC = 480V
V GE = 15V
TJ = 25 °C
0.38 I C = 5.0A
0.36
0.34
0.32
20
40
60
RG , Gate Resistance
80
(Ω)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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4
8
12
16
20
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
0.40
0
0
QG , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
0.30
VCC = 400V
I C = 5.0A
100
50 Ω
RG = Ohm
VGE = 15V
VCC = 480V
IC = 10 A
1
IC =
5A
IC = 2.5 A
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
IRG4BC10KDPbF
RG
TJ
VCC
VGE
= Ohm
50 Ω
= 150° C
= 480V
= 15V
100
I C , Collector-to-Emitter Current (A)
Total Switching Losses (mJ)
2.0
1.5
1.0
0.5
0.0
0
2
4
6
8
10
1
10
VGE = 20V
T J = 125 o C
SAFE OPERATING AREA
1
I C , Collector Current (A)
10
100
1000
VCE, Collector-to-Emitter Voltage (V)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
Fig. 12 - Turn-Off SOA
100
TJ = 150°C
10
T = 125°C
J
T = 25°C
J
1
0.1
0.0
1.0
2.0
3.0
4.0
5.0
6.0
Forward Voltage Drop - V FM(V)
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
6
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IRG4BC10KDPbF
50
14
I F = 8.0A
45
12
I F = 4.0A
10
I F = 8.0A
I F = 4.0A
Irr- ( A)
trr- (ns)
40
VR = 200V
TJ = 125°C
TJ = 25°C
35
8
6
30
4
25
2
VR = 200V
TJ = 125°C
TJ = 25°C
20
100
di f /dt - (A/µs)
0
100
1000
di f /dt - (A/µs)
1000
Fig. 15 - Typical Recovery Current vs. dif/dt
Fig. 14 - Typical Reverse Recovery vs. dif/dt
200
1000
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
160
I F = 8.0A
di (rec) M/dt- (A /µs)
I F = 4.0A
Qrr- (nC)
120
I F = 8.0A
80
I F = 4.0A
40
0
100
di f /dt - (A/µs)
1000
Fig. 16 - Typical Stored Charge vs. dif/dt
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100
100
A
di f /dt - (A/µs)
1000
Fig. 17 - Typical di(rec)M/dt vs. dif/dt,
7
IRG4BC10KDPbF
Same type
device as
D.U.T.
430µF
80%
of Vce
90%
D.U.T.
10%
Vge
VC
90%
td(off)
10%
IC 5%
Fig. 18a - Test Circuit for Measurement of
tf
tr
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t d(on)
t=5µs
Eon
Eoff
Ets= (Eon +Eoff )
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
GATE VOLTAGE D.U.T.
10% +Vg
trr
Ic
Qrr =
tx
DUT VOLTAGE
AND CURRENT
Vce
10% Ic
90% Ic
tr
td(on)
10% Irr
Ipk
Vpk
Vcc
Irr
Ic
DIODE RECOVERY
WAVEFORMS
5% Vce
t1
∫
t2
VceieIcdtdt
Eon = Vce
t1
t2
DIODE REVERSE
RECOVERY ENERGY
t3
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
8
∫
+Vg
10% Vcc
Vcc
trr
id
Ic dtdt
tx
∫
t4
Erec = Vd
VdidIcdt dt
t3
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
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IRG4BC10KDPbF
Vg GATE SIGNAL
DEVICE UNDER TEST
CURRENT D.U.T.
VOLTAGE IN D.U.T.
CURRENT IN D1
t0
t1
t2
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
D.U.T.
L
1000V
Vc*
RL=
0 - 480V
480V
4 X IC @25°C
50V
6000µF
100V
Figure 19. Clamped Inductive Load Test Circuit
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Figure 20. Pulsed Collector Current
Test Circuit
9
IRG4BC10KDPbF
Notes:
Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20)
‚VCC=80%(VCES), VGE=20V, L=10µH, RG= 100Ω (figure 19)
ƒPulse width ≤ 80µs; duty factor ≤ 0.1%.
„Pulse width 5.0µs, single shot.
TO-220AB Package Outline
10.54 (.415)
10.29 (.405)
2.87 (.113)
2.62 (.103)
-B-
3.78 (.149)
3.54 (.139)
4.69 (.185)
4.20 (.165)
-A-
1.32 (.052)
1.22 (.048)
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
LEAD ASSIGNMENTS
1.15 (.045)
MIN
1
2
3
4- DRAIN
14.09 (.555)
13.47 (.530)
4- COLLECTOR
4.06 (.160)
3.55 (.140)
3X
3X
LEAD ASSIGNMENTS
IGBTs, CoPACK
1 - GATE
2 - DRAIN
1- GATE
1- GATE
3
SOURCE
2- DRAIN
2- COLLECTOR
3- SOURCE
3- EMITTER
4 - DRAIN
HEXFET
1.40 (.055)
1.15 (.045)
0.93 (.037)
0.69 (.027)
0.36 (.014)
3X
M
B A M
0.55 (.022)
0.46 (.018)
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
E XAMP L E : T HIS IS AN IR F 1010
L OT CODE 1789
AS S E MB L E D ON WW 19, 1997
IN T H E AS S E MB L Y L INE "C"
Note: "P" in assembly line
position indicates "Lead-Free"
INT E R NAT IONAL
R E CT IF IE R
L OGO
AS S E MB L Y
L OT CODE
PAR T NUMB E R
DAT E CODE
YE AR 7 = 1997
WE E K 19
L INE C
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/03
10
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