DISCRETE SEMICONDUCTORS DATA SHEET BLW30 VHF power transistor Product specification September 1991 Philips Semiconductors Product specification VHF power transistor FEATURES • Emitter-ballasting resistors for an optimum temperature profile BLW30 QUICK REFERENCE DATA RF performance at Tmb = 25 °C in a common emitter test circuit. MODE OF OPERATION • Excellent reliability • Withstands full load mismatch. f (MHz) c.w. class-B 175 12.5 PL (W) ηC (%) GP (dB) > 10 30 > 55 WARNING DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a 4-lead 3⁄8 inch SOT120 capstan envelope with a ceramic cap. It is designed for common emitter, class-B operation mobile VHF transmitters with a supply voltage of 12.5 V. All leads are isolated from the stud. PINNING - SOT120 PIN VCE (V) Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. PIN CONFIGURATION DESCRIPTION 1 collector 2 emitter 3 base 4 emitter halfpage 4 1 c 3 handbook, halfpage b MBB012 2 MSB056 Fig.1 Simplified outline and symbol. September 1991 2 e Philips Semiconductors Product specification VHF power transistor BLW30 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 36 V VCEO collector-emitter voltage open base − 16 V VEBO emitter-base voltage open collector − 3 V IC, IC(AV) collector current DC or average value − 6 A ICM collector current peak value f > 1 MHz − 18 A Ptot total power dissipation RF operation; f > 1 MHz; Tmb = 25 °C − 100 W Tstg storage temperature range −65 150 °C Tj junction operating temperature − 200 °C MRA382 120 handbook, halfpage Ptot (W) 100 II 80 I 60 40 20 0 0 20 40 60 80 100 120 o Th ( C) (I) Continuous RF operation (f > 1 MHz). (II) Short time operation during mismatch (f > 1 MHz). Fig.2 Power/temperature derating curve. THERMAL RESISTANCE SYMBOL PARAMETER Rth j-mb(RF) from junction to mounting base Rth mb-h from mounting base to heatsink September 1991 CONDITIONS Ptot = 100 W; Tmb = 25 °C 3 MAX. UNIT 1.75 K/W 0.45 K/W Philips Semiconductors Product specification VHF power transistor BLW30 CHARACTERISTICS Tj = 25 °C. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)CBO collector-base breakdown voltage open emitter; Ic = 10 mA 36 − − V V(BR)CEO collector-emitter breakdown voltage open base; Ic = 25 mA 16 − − V V(BR)EBO emitter-base breakdown voltage open collector; IE = 2 mA 3 − − V ICES collector-emitter leakage current VBE = 0; VCE = 16 V − − 10 mA hFE DC current gain VCE = 5 V; IC = 4 A 25 35 − fT transition frequency VCE = 12.5 V; IE = 4 A; f = 500 MHz − 1.6 − GHz Cc collector capacitance VCB = 12.5 V; IE = Ie = 0; f = 1 MHz − 90 100 pF Cre feedback capacitance VCE = 12.5 V; IC = 0; f = 1 MHz − 60 70 pF Cc-s collector-stud capacitance f = 1 MHz − 2 − pF MRA378 MRA374.1 250 handbook, halfpage handbook, 50 halfpage h Cc (pF) FE 200 40 VCE = 12.5 V 150 30 VCE = 5 V 20 100 50 10 0 0 0 4 8 12 IC (A) 0 16 4 8 12 16 VCB (V) IE = ie = 0; f = 1 MHz. Fig.3 DC current gain as a function of collector current, typical values. September 1991 Fig.4 4 Collector capacitance as a function of collector-base voltage, typical values. Philips Semiconductors Product specification VHF power transistor BLW30 MRA375 2 handbook, halfpage fT (GHz) 1.5 1 0.5 0 0 2 4 6 8 10 I E (A) VCB = 12.5 V. Fig.5 Transition frequency as a function of emitter current, typical values. September 1991 5 Philips Semiconductors Product specification VHF power transistor BLW30 APPLICATION INFORMATION RF performance at Tmb = 25 °C in a common emitter test circuit. f (MHz) MODE OF OPERATION c.w. class-B VCE (V) 175 PL (W) 12.5 ηC (%) GP (dB) > 10 typ. 11 30 > 55 typ. 60 MRA376 16 MRA381 50 80 handbook, halfpage handbook, halfpage P L (W) η GP (dB) GP (%) η 12 40 60 30 40 8 20 20 4 10 0 10 20 30 40 P (W) L 0 0 0 1 2 3 4 Class-B operation; VCE = 12.5 V; f = 175 MHz. Class-B operation; VCE = 12.5 V; f = 175 MHz. Fig.6 Fig.7 Gain and efficiency as functions of load power, typical values. 5 6 P (W) IN Load power as a function of drive power, typical values. Ruggedness in class-B operation The BLW30 is capable of withstanding a full load mismatch corresponding to VSWR = 50:1 through all phases at rated output power, up to a supply voltage of 15.5 V, and f = 175 MHz. September 1991 6 Philips Semiconductors Product specification VHF power transistor BLW30 handbook, full pagewidth C1 L1 50 Ω L4 C6 L8 L5 C3a 50 Ω T.U.T. C7 L6 C2 C3b L2 C4 C5 R1 R2 L7 L3 MGP427 +VCC Fig.8 Class-B test circuit at f = 175 MHz. List of components (see test circuit) COMPONENT C1 DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. film dielectric trimmer 2.5 to 20 pF 2222 809 07004 C2, C7 film dielectric trimmer 4 to 40 pF 2222 809 07008 C3a, C3b 500 V ceramic capacitor 47 pF C4 ceramic capacitor 120 pF C5 polyester capacitor 100 nF C6 film dielectric trimmer 7 to 100 pF L1 1⁄ L2 7 turns closely wound enamelled 0.5 mm copper wire L3, L7 grade 3B Ferroxcube wideband HF choke L4, L5 stripline (note 1) 12 mm × 6 mm; note 2 L6 31⁄2 turns closely wound enamelled 1.6 mm copper wire int. dia. 6 mm; leads 2 × 5 mm L8 1 turn enamelled 1.6 mm copper wire int. dia. 6 mm; leads 2 × 5 mm R1, R2 0.25 W carbon resistor 2 turn enamelled 1.6 mm copper wire 2222 809 07015 int. dia. 6 mm; leads 2 × 5 mm 100 nH int. dia. 3 mm; leads 2 × 5 mm 4312 020 36640 10 Ω, 5% Notes 1. The striplines are on a double copper-clad printed circuit board, with epoxy fibre-glass dielectric, thickness 1⁄16 inch. 2. Taps for capacitors C3a and C3b are situated 5 mm from the transistor. September 1991 7 Philips Semiconductors Product specification VHF power transistor BLW30 150 handbook, full pagewidth 72 L7 L3 +VCC C4 R1 L2 C1 C2 L1 C3a C5 R2 L6 L4 L5 C6 L8 C7 C3b rivet MGP428 The circuit and components are situated on one side of an epoxy fibre-glass board; the other side is unetched and serves as a ground plane. Earth connections are made by means of hollow rivets and copper straps under the emitters, to provide a direct contact between the component side and the ground plane. Fig.9 Component layout for 175 MHz class-B test circuit. September 1991 8 Philips Semiconductors Product specification VHF power transistor BLW30 MRA380 MRA379 3 4 handbook, halfpage handbook, halfpage ZL (Ω) Zi 3 (Ω) 2 RL 2 ri 1 1 0 xi XL -1 0 100 150 200 f (MHz) -2 100 250 150 200 f (MHz) 250 Class-B operation; VCE = 12.5 V; PL = 30 W. Class-B operation; VCE = 12.5 V; PL = 30 W. Fig.10 Input impedance (series components) as a function of frequency, typical values. Fig.11 Load impedance (series components) as a function of frequency, typical values. MRA377 handbook, GP halfpage (dB) 15 10 handbook, halfpage 5 Zi ZL MBA451 0 100 150 200 f (MHz) 250 Class-B operation; VCE = 12.5 V; PL = 30 W. Fig.12 Definition of transistor impedance. September 1991 Fig.13 Power gain as a function of frequency, typical values. 9 Philips Semiconductors Product specification VHF power transistor BLW30 PACKAGE OUTLINE Studded ceramic package; 4 leads SOT120A D A Q c A D1 N1 w1 M A D2 N M W N3 M1 X H detail X b 4 L 3 H 1 2 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D1 D2 H L M M1 N N1 N3 Q mm 5.97 4.74 5.90 5.48 0.18 0.14 9.73 9.47 8.39 8.12 9.66 9.39 27.44 25.78 9.00 8.00 3.41 2.92 1.66 1.39 12.83 11.17 1.60 0.00 3.31 2.54 4.35 3.98 0.065 0.505 0.063 0.055 0.440 0.000 0.130 0.100 0.171 0.157 inches 0.283 0.248 0.232 0.007 0.216 0.004 OUTLINE VERSION 0.383 0.330 0.380 1.080 0.373 0.320 0.370 1.015 0.354 0.134 0.315 0.115 REFERENCES IEC JEDEC EIAJ w1 0.38 8-32 UNC EUROPEAN PROJECTION 0.015 ISSUE DATE 97-06-28 SOT120A September 1991 W 10 Philips Semiconductors Product specification VHF power transistor BLW30 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1991 11