DISCRETE SEMICONDUCTORS DATA SHEET BLV75/12 VHF power transistor Product specification August 1986 Philips Semiconductors Product specification VHF power transistor BLV75/12 DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 175 MHz commmunications band. • multi-base structure and emitter-ballasting resistors for an optimum temperature profile • gold metallization ensures excellent reliability • internal matching to achieve an optimum wideband capability and high power gain The transistor has a 6-lead flange envelope with a ceramic cap (SOT-119). All leads are isolated from the flange. QUICK REFERENCE DATA R.F. performance up to Th = 25 °C in a common-emitter class-B circuit MODE OF OPERATION narrow band; c.w. VCE V f MHz PL W Gp dB ηC % 12,5 175 75 > 6,5 > 55 PIN CONFIGURATION PINNING PIN handbook, halfpage 1 2 3 4 5 6 DESCRIPTION 1 emitter 2 emitter 3 base 4 collector 5 emitter 6 emitter MSB006 Fig.1 Simplified outlinbe, SOT119A. PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged. August 1986 2 Philips Semiconductors Product specification VHF power transistor BLV75/12 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-base voltage (open emitter) peak value vCBOM max. 36 V Collector-emitter voltage (open base) VCEO max. 16,5 V Emitter-base voltage (open collector) VEBO max. 4 V d.c. or average IC max. 15 A peak value; f > 1 MHz ICM max. 45 A 150 W Collector current Total power dissipation at Tmb = 25 °C; f > 1 MHz Ptot max. Storage temperature Tstg −65 to + 150 °C Operating junction temperature Tj max. 200 °C MGP390 102 handbook, halfpage MGP391 200 handbook, halfpage IC (A) Ptot (W) ΙΙ Tmb = 25 °C 10 100 Th = 70 °C Ι 1 1 10 0 16.5 VCE (V) 102 0 100 Th (°C) 200 I Continuous operation (f > 1 MHz) II Short-time operation during mismatch; (f > 1 MHz). Fig.2 D.C. soar. Rth mb-h = 0,2 K/W. Fig.3 Power/temperature derating curves; Rth mb-h = 0,2 K/W. THERMAL RESISTANCE Dissipation = 96 W; Tmb = 25 °C From junction to mounting base (r.f. operation) From mounting base to heatsink August 1986 3 Rth j−mb = 1,05 K/W Rth mb−h = 0,2 K/W Philips Semiconductors Product specification VHF power transistor BLV75/12 CHARACTERISTICS Tj = 25°C unless otherwise specified Collector-base breakdown voltage open emitter; IC = 100 mA V(BR)CBO min. 36 V V(BR)CEO min. 16,5 V V(BR)EBO min. 4 V ICES max. 44 mA ESBR min. 20 mJ hFE min. typ. 15 55 Cc typ. 240 pF Cre typ. 150 pF Ccf typ. 3 pF Collector-emitter breakdown voltage open base; IC = 200 mA Emitter-base breakdown voltage open collector; IE = 20 mA Collector cut-off current VBE = 0; VCE = 16 V Second breakdown energy L = 25 mH; f = 50 Hz; RBE = 10 Ω D.C. current gain VCE = 10 V; IC = 10 A Collector capacitance at f = 1 MHz IE = ie = 0; VCB = 12,5 V Feedback capacitance at f = 1 MHz IC = 0; VCE = 12,5 V Collector-flange capacitance MGP392 80 MGP393 800 handbook, halfpage handbook, halfpage Cc (pF) VCE = 12.5 V hFE 10 V 40 400 0 0 Fig.4 10 20 30 IC (A) 0 40 0 D.C. current gain versus collector current; Tj = 25 °C. August 1986 Fig.5 4 10 VCB (V) 20 Output capacitance versus VCB; IE = ie = 0; f = 1 MHz; Tj = 25 °C. Philips Semiconductors Product specification VHF power transistor BLV75/12 APPLICATION R. F. performance in c.w. operation (common-emitter circuit; class-B) f = 175 MHz; Th = 25 °C; Rth mb-h = 0,2 K/W MODE OF OPERATION narrow band; c.w. VCE V PL W Gp dB ηC % 12,5 75 > 6,5 > 55 typ. 7,5 typ. 63 handbook, full pagewidth C2 C20 L1 50 Ω C1 C4 L3 L2 C3 C6 C5 L4 T.U.T. L7 C7 C8 C10 C13 C15 L8 L11 C9 R2 L6 C12 L10 C14 +VCC Fig.6 Class-B test circuit at f = 175 MHz. August 1986 5 MGP394 C18 50 Ω C16 L9 L5 R1 C11 C17 C19 Philips Semiconductors Product specification VHF power transistor BLV75/12 List of components: C1 = 5 to 60 pF film dielectric trimmer (cat. no. 2222 809 07011) C2 = 10 pF multilayer ceramic chip capacitor(1) C3 = C16 = 4 to 40 pF film dielectric trimmer (cat. no. 2222 809 07008) C4 = C5 = 75 pF multilayer ceramic chip capacitor C6 = C7 = 100 pF multilayer ceramic chip capacitor(1) C8 = C9 = 2 × 75 pF multilayer ceramic chip capacitors(1) in parallel C10 = C13 = 39 pF multilayer ceramic chip capacitor(1) C11 = 2,5 to 20 pF film dielectric trimmer (cat. no. 2222 809 07004) C12 = 2 × 820 pF multilayer ceramic chip capacitors in parallel(1) C14 = 100 nF polyester capacitor C15 = C17 = 12 pF multilayer ceramic chip capacitor(1) C18 = C19 = 470 pF multilayer ceramic chip capacitor(1) C20 = 820 pF multilayer ceramic chip capacitor(1) L1 = 1 turn silver-plated Cu-wire (2,0 mm); int. dia. 10 mm; leads 2 × 4 mm L2 = 1 turn silver-plated Cu-wire (2,0 mm); int. dia. 1 mm; leads 2 × 6 mm L3 = strip (14 mm × 6 mm) L4 = strip (8 mm × 6 mm) L5 = 100 nH, 7 turns closely wound enamelled Cu-wire (0,5 mm); int. dia. 3 mm; leads 2 × 7 mm L6 = Ferroxcube wideband h.f. choke, grade 3B (cat. no. 4312 020 36640) L7 = strip (12 mm × 6 mm) L8 = silver-plated copper U-shaped inductance (7 + 15 + 7) mm × 4 mm × 0,5 mm L9 = silver-plated copper U-shaped inductance (8 + 8,5 + 6) mm × 4 mm × 0,5 mm L10 = modified Ferroxcube wideband h.f. choke, grade 3B (cat. no. 4312 020 36640) with 3 parallel connected Cu wires (0,8 mm) L11 = 2 turns silver-plated Cu-wire (2,0 mm); int. dia. 9 mm; length 7,5 mm; leads 2 × 3,5 mm L3, L4 and L7 are strips on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric (εr = 4,5), thickness 1/16 inch). R1 = 10 Ω ± 10%, carbon resistor R2 = 4,7 Ω ± 10%, carbon resistor Note 1. American Technical Ceramics capacitor type 100B or capacitor of the same quality. August 1986 6 Philips Semiconductors Product specification VHF power transistor BLV75/12 192 handbook, full pagewidth 70 rivets soldered copper straps Cu strap ground plane removed L10 L6 C4 C2 R2 C12 R1 L5 L9 C8 C6 C20 L3 L4 +VCC C14 C10 C15 L11 C18 C19 L7 L8 L1 C1 L2 C5 C17 C13 C9 C7 C3 C11 C16 MGP395 Fig.7 Printed circuit board and component lay-out for 175 MHz class-B test circuit. The circuit and components are on one side of the epoxy fibre-glass board. The other side, except for the area indicated by the dotted line, is unetched copper serving as a ground plane. If the p.c.b. is in direct contact with the heatsink, the heatsink area within the dotted line has to be raised al least 0,5 mm to minimize the dielectric losses. Earth connections are made by hollow rivets and additionally by fixing screws and copper straps under the emitters to provide a direct contact between the copper of the component side and the ground plane. August 1986 7 Philips Semiconductors Product specification VHF power transistor BLV75/12 MGP396 MGP397 12 120 handbook, halfpage handbook, halfpage PL (W) GP (dB) ηC (%) GP 8 80 120 80 ηC 4 40 40 0 0 0 10 20 PS (W) 0 30 Typical values; VCE = 12,5 V; f = 175 MHz; Th = 25 °C; Rth mb-h = 0,2 K/W 80 PL (W) 0 120 Typical values; VCE = 12,5 V; f = 175 MHz; Th = 25 °C; Rth mb-h = 0,2 K/W Fig.8 Load power versus source power. Fig.9 Ruggedness in class-B operation The BLV75/12 is capable of withstanding a load mismatch (VSWR = 20 through all phases) at rated load power up to a supply voltage of 12,5 V; Th = 25 °C; Rth mb-h = 0,2 K/W. Power slump If Th is increased from 25 °C to 70 °C the output power slump for constant PS amounts to typ. 7% (VCE = 12,5; f = 175 MHz; Rth mb-h = 0,2 K/W). August 1986 40 8 Power gain and efficiency versus load power. Philips Semiconductors Product specification VHF power transistor BLV75/12 MGP398 MGP399 3 2 handbook, halfpage handbook, halfpage ri, xi RL, XL (Ω) (Ω) 2 RL 1 ri 1 0 xi −1 XL −1 0 50 100 150 f (MHz) −2 200 50 100 150 f (MHz) 200 Typical values; VCE = 12,5 V; PL = 75 W; f = 50 to 200 MHz; class-B operation; Rth mb-h = 0,2 K/W Typical values; VCE = 12,5 V; PL = 75 W; f = 50 to 200 MHz; class-B operation; Rth mb-h = 0,2 K/W Fig.10 Input impedance (series components). Fig.11 Load impedance (series components). MGP400 16 handbook, halfpage GP (dB) 12 8 4 0 50 100 150 f (MHz) 200 Typical values; VCE = 12,5 V; PL = 75 W; f = 50 to 200 MHz; class-B operation; Rth mb-h = 0,2 K/W Fig.12 Power gain versus frequency. August 1986 9 Philips Semiconductors Product specification VHF power transistor BLV75/12 PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 6 leads SOT119A A F q C U1 B H1 w2 M C b2 2 H c 4 6 p U2 D1 U3 D w1 M A B A 1 3 5 b1 w3 M b Q e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b b1 b2 mm 7.39 6.32 5.59 5.33 5.34 5.08 4.07 3.81 inches c D w2 w3 4.58 25.23 6.48 12.76 18.42 0.51 3.98 23.95 6.07 12.06 1.02 0.26 0.291 0.220 0.210 0.160 0.007 0.505 0.505 0.100 0.870 0.730 0.130 0.180 0.993 0.255 0.502 0.725 0.02 0.255 0.249 0.210 0.200 0.150 0.003 0.496 0.495 0.090 0.830 0.720 0.117 0.157 0.943 0.239 0.475 0.04 0.01 OUTLINE VERSION e D1 0.18 12.86 12.83 6.48 0.07 12.59 12.57 F H JEDEC EIAJ SOT119A August 1986 p 2.54 22.10 18.55 3.31 2.28 21.08 18.28 2.97 REFERENCES IEC H1 Q q U1 U2 U3 EUROPEAN PROJECTION w1 ISSUE DATE 97-06-28 10 Philips Semiconductors Product specification VHF power transistor BLV75/12 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August 1986 11